Patents by Inventor Kazuyoshi Yamashita
Kazuyoshi Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180366503Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: ApplicationFiled: August 28, 2018Publication date: December 20, 2018Applicant: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Publication number: 20180350859Abstract: Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch.Type: ApplicationFiled: August 10, 2018Publication date: December 6, 2018Inventor: KAZUYOSHI YAMASHITA
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Patent number: 10084002Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: GrantFiled: February 6, 2018Date of Patent: September 25, 2018Assignee: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Publication number: 20180240840Abstract: The present technology relates to a solid-state imaging apparatus and an electronic apparatus that makes it possible to improve coloration and improve image quality. The solid-state imaging apparatus is formed so that, in a pixel array unit in which combinations of a first pixel corresponding to a color component of a plurality of color components and a second pixel having higher sensitivity to incident light as compared with the first pixel are two-dimensionally arrayed, a first electrical barrier formed between a first photoelectric conversion unit and a first unnecessary electric charge drain unit in the first pixel, and a second electrical barrier formed between a second photoelectric conversion unit and a second unnecessary electric charge drain unit in the second pixel have different heights, respectively. The present technology can be applied to, for example, a CMOS image sensor.Type: ApplicationFiled: March 9, 2016Publication date: August 23, 2018Inventor: KAZUYOSHI YAMASHITA
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Publication number: 20180234651Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.Type: ApplicationFiled: April 4, 2018Publication date: August 16, 2018Inventors: Takashi MACHIDA, Kazuyoshi YAMASHITA
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Patent number: 10050072Abstract: Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch.Type: GrantFiled: February 3, 2017Date of Patent: August 14, 2018Assignee: SONY CORPORATIONInventor: Kazuyoshi Yamashita
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Publication number: 20180211987Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.Type: ApplicationFiled: March 20, 2018Publication date: July 26, 2018Inventors: JUN OKUNO, KAZUYOSHI YAMASHITA
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Patent number: 10027011Abstract: The waveguide device, in which first/second openings are formed at end parts of a waveguide path, comprises a waveguide path obtained by uniting first/second waveguides. The first waveguide is provided with a first recessed part which has an opening with a same shape as the first opening and has a bottom part formed in a first direction as seen from the opening. The second waveguide is provided with a second recessed part which has an opening with a same shape as the second opening and has a bottom part formed in a second direction as seen from the opening. The first/second waveguides are united in a manner such that, positions of the bottom parts of the first/second recessed parts are different from each other in a direction differing from the first/second directions, and the first/second recessed parts connect with each other at the respective bottom parts.Type: GrantFiled: August 31, 2015Date of Patent: July 17, 2018Assignee: Mitsubishi Electric CorporationInventors: Akimichi Hirota, Yukihiro Tahara, Takashi Maruyama, Tomohiro Takahashi, Kazuyoshi Yamashita
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Publication number: 20180166480Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: ApplicationFiled: February 6, 2018Publication date: June 14, 2018Inventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Patent number: 9986186Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.Type: GrantFiled: December 7, 2015Date of Patent: May 29, 2018Assignee: Sony CorporationInventors: Takashi Machida, Kazuyoshi Yamashita
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Patent number: 9941314Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.Type: GrantFiled: June 23, 2014Date of Patent: April 10, 2018Assignee: SONY CORPORATIONInventors: Jun Okuno, Kazuyoshi Yamashita
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Patent number: 9929193Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: GrantFiled: November 10, 2016Date of Patent: March 27, 2018Assignee: Sony CorporationInventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Patent number: 9843751Abstract: A solid-state image sensor including a pixel array portion formed from a two-dimensional array of ordinary imaging pixels each having a photoelectric conversion unit and configured to output an electric signal obtained through photoelectric conversion as a pixel signal, and focus detection pixels for detecting focus. The focus detection pixels include at least a first focus detection pixel and a second focus detection pixel each having a photoelectric conversion unit and configured to transfer and output an electric signal obtained through photoelectric conversion to an output node. The first focus detection pixel and the second focus detection pixel share the output node. The first focus detection pixel includes a first photoelectric conversion unit, and a first transfer gate for reading out an electron generated through photoelectric conversion in the first photoelectric conversion unit to the shared output node.Type: GrantFiled: August 9, 2016Date of Patent: December 12, 2017Assignee: SONY CORPORATIONInventor: Kazuyoshi Yamashita
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Publication number: 20170280080Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.Type: ApplicationFiled: December 7, 2015Publication date: September 28, 2017Applicant: SONY CORPORATIONInventors: Takashi MACHIDA, Kazuyoshi YAMASHITA
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Publication number: 20170148832Abstract: Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch.Type: ApplicationFiled: February 3, 2017Publication date: May 25, 2017Inventor: KAZUYOSHI YAMASHITA
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Publication number: 20170141448Abstract: The waveguide device, in which first/second openings are formed at end parts of a waveguide path, comprises a waveguide path obtained by uniting first/second waveguides. The first waveguide is provided with a first recessed part which has an opening with a same shape as the first opening and has a bottom part formed in a first direction as seen from the opening. The second waveguide is provided with a second recessed part which has an opening with a same shape as the second opening and has a bottom part formed in a second direction as seen from the opening. The first/second waveguides are united in a manner such that, positions of the bottom parts of the first/second recessed parts are different from each other in a direction differing from the first/second directions, and the first/second recessed parts connect with each other at the respective bottom parts.Type: ApplicationFiled: August 31, 2015Publication date: May 18, 2017Applicant: Mitsubishi Electric CorporationInventors: Akimichi HIROTA, Yukihiro TAHARA, Takashi MARUYAMA, Tomohiro TAKAHASHI, Kazuyoshi YAMASHITA
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Patent number: 9634054Abstract: A solid-state image pickup device includes: a photoelectric conversion element including a charge accumulation region, the photoelectric conversion element performing photoelectric conversion on incident light and accumulating, in the charge accumulation region, electric charge obtained through the photoelectric conversion; a charge-voltage conversion element accumulating the electric charge obtained through the photoelectric conversion; and a charge accumulation element adjacent to the photoelectric conversion element, part or all of the charge accumulation element overlapping the charge accumulation region, and the charge accumulation element adding capacitance to capacitance of the charge-voltage conversion element.Type: GrantFiled: September 28, 2016Date of Patent: April 25, 2017Assignee: SONY CORPORATIONInventor: Kazuyoshi Yamashita
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Publication number: 20170062502Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.Type: ApplicationFiled: November 10, 2016Publication date: March 2, 2017Inventors: Mikiko Kobayashi, Kazuyoshi Yamashita
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Publication number: 20170018592Abstract: A solid-state image pickup device includes: a photoelectric conversion element including a charge accumulation region, the photoelectric conversion element performing photoelectric conversion on incident light and accumulating, in the charge accumulation region, electric charge obtained through the photoelectric conversion; a charge-voltage conversion element accumulating the electric charge obtained through the photoelectric conversion; and a charge accumulation element adjacent to the photoelectric conversion element, part or all of the charge accumulation element overlapping the charge accumulation region, and the charge accumulation element adding capacitance to capacitance of the charge-voltage conversion element.Type: ApplicationFiled: September 28, 2016Publication date: January 19, 2017Inventor: KAZUYOSHI YAMASHITA
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Patent number: 9538104Abstract: There is provided an imaging apparatus that includes a photoelectric conversion section, a retention section, and first and second gates. The photoelectric conversion section is configured to convert a received light into charge. The retention section is configured to retain the charge provided by the photoelectric conversion section. The first and second gates are provided between the photoelectric conversion section and the retention section, the first and second gates being turned ON for transferring the charge from the photoelectric conversion section to the retention section, and the second gate being turned OFF after the first gate is turned OFF.Type: GrantFiled: September 11, 2014Date of Patent: January 3, 2017Assignee: Sony Semiconductor Solutions CorporationInventors: Yoshimichi Kumagai, Takashi Abe, Kazuyoshi Yamashita