Abstract: A plasma processing apparatus including a processing chamber; a wafer stage on which a processing target wafer is placed; an electrostatic chuck including a film-shaped electrostatic attraction electrode which is disposed in a dielectric film covering an upper surface of the wafer stage; a radio frequency electrode which is disposed inside the wafer stage; and a lift pin which is disposed inside the wafer stage and which moves the wafer up and down by movement thereof, a lower portion of the lift pin being connected to a member made of a conductor, in which a voltage value Eps of the lower portion of the lift pin and an average value Eesc of the potential of the electrostatic attraction electrode are adjusted during the processing of the wafer so as to match the predicted value Vdcs of the self-bias voltage of the wafer.

Abstract: A plasma processing apparatus includes: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride. A ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to the entirety is 60% or more.

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

Abstract: Provided is a manufacturing method of an interior member of a plasma processing apparatus, which improves processing yield. The interior member is disposed inside a processing chamber of the plasma processing apparatus and includes, on a surface thereof, a film of a material having resistance to plasma. The manufacturing method includes: a step of moving a gun by a predetermined distance along the surface of the interior member to spray the material to form the film, and disposing a test piece having a surface having a shape simulating a surface shape of the interior member within a range of the distance within which the gun is moved and forming the film of the material on the surface of the test piece; and a step of adjusting, based on a result of detecting a crystal size of the film on the surface of the test piece and presence or absence of a residual stress or inclusion of a contaminant element, a condition of forming the film on the surface of the interior member by the gun.

Abstract: Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

Abstract: Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

Abstract: A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

Abstract: There is provided a plasma processing apparatus that suppress the contamination of a sample and improves process yield or an inner component of a plasma processing apparatus or a manufacturing method for the inner component. A plasma processing apparatus processes a wafer which is a processing target placed in a processing chamber in an inside of a vacuum chamber using plasma formed from a processing gas supplied to an inside of the processing chamber. A surface of a component that is placed in the inside of the processing chamber and faces the plasma is made of a dielectric material. The dielectric material includes a first material that combines with the supplied processing gas and is volatilized and a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination.

Abstract: A plasma processing apparatus includes a processing chamber in which plasma processing is performed on a wafer, a DP that reduces a pressure in the processing chamber via an evacuating pipe connected to the processing chamber, a TMP that performs evacuation such that a degree of vacuum of the processing chamber becomes a high degree of vacuum, and a stage on which the wafer is placed. Further, the plasma processing apparatus includes a He evacuating pipe that is a flow channel of a heat-transfer gas that transfers heat of the stage subjected to temperature adjustment to the wafer, a first gas supplying mechanism that supplies a gas to a portion of the evacuating pipe which is exposed to atmosphere, during venting a processing chamber to atmosphere, and a control device that controls the first gas supplying mechanism. The control device is provided to communicate with the evacuating pipe.

Abstract: A plasma processing apparatus includes a processing chamber in which plasma processing is performed on a wafer, a DP that reduces a pressure in the processing chamber via an evacuating pipe connected to the processing chamber, a TMP that performs evacuation such that a degree of vacuum of the processing chamber becomes a high degree of vacuum, and a stage on which the wafer is placed. Further, the plasma processing apparatus includes a He evacuating pipe that is a flow channel of a heat-transfer gas that transfers heat of the stage subjected to temperature adjustment to the wafer, a first gas supplying mechanism that supplies a gas to a portion of the evacuating pipe which is exposed to atmosphere, during venting a processing chamber to atmosphere, and a control device that controls the first gas supplying mechanism. The control device is provided to communicate with the evacuating pipe.

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

Abstract: A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

Abstract: A plasma processing apparatus includes: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride. A ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to the entirety is 60% or more.

Abstract: A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

Abstract: A plasma processing apparatus includes a processing chamber in which plasma processing is performed on a wafer, a DP that reduces a pressure in the processing chamber via an evacuating pipe connected to the processing chamber, a TMP that performs evacuation such that a degree of vacuum of the processing chamber becomes a high degree of vacuum, and a stage on which the wafer is placed. Further, the plasma processing apparatus includes a He evacuating pipe that is a flow channel of a heat-transfer gas that transfers heat of the stage subjected to temperature adjustment to the wafer, a first gas supplying mechanism that supplies a gas to a portion of the evacuating pipe which is exposed to atmosphere, during venting a processing chamber to atmosphere, and a control device that controls the first gas supplying mechanism. The control device is provided to communicate with the evacuating pipe.