Patents by Inventor Kazuyuki Miura
Kazuyuki Miura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11742188Abstract: A substrate processing method is provided. In the method, a process gas is supplied into a chamber. A pressure in the chamber is controlled to a first pressure by evacuating the chamber via a first exhaust line. Then, the pressure in the chamber is controlled to a second pressure that is higher than the first pressure by evacuating the chamber via a second exhaust line while closing the first exhaust line. Next, the pressure in the chamber is controlled to the first pressure by evacuating the chamber via the first exhaust line while closing the second exhaust line.Type: GrantFiled: August 11, 2020Date of Patent: August 29, 2023Assignee: Tokyo Electron LimitedInventors: Kazuyuki Miura, Norihiko Amikura
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Patent number: 11585717Abstract: In a substrate processing system according to an exemplary embodiment, gas supply units are configured to supply gases to chambers through first gas flow channels thereof, respectively. Chamber pressure sensors are configured to measure pressures in the chambers. A second gas flow channel is connected to the first gas flow channel of each of the gas supply units. A reference pressure sensor is configured to measure a pressure in the second gas flow channel. In a method according to an exemplary embodiment, each of the chamber pressure sensors is calibrated by using a measurement value thereof and a measurement value of the reference pressure sensor which are obtained in a state where pressures in a corresponding chamber, the first gas flow channel of a corresponding gas supply unit, and the second gas flow channel are maintained.Type: GrantFiled: March 2, 2020Date of Patent: February 21, 2023Assignee: Tokyo Electron LimitedInventors: Risako Matsuda, Norihiko Amikura, Kazuyuki Miura, Keita Shouji
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Patent number: 11326914Abstract: The flow rate measurement method includes: measuring a first pressure of a gas filled in a first flow path connected to a flow rate controller and a second flow path connected to the first flow path; supplying a gas to the first and second flow paths via the flow rate controller and measuring a second pressure and a temperature of the gas filled in the first and second flow paths; after the gas is exhausted from the second flow path, measuring a third pressure of the gas filled in the second flow path; measuring a fourth pressure of the gas filled in the first and second flow paths; and calculating an amount of the gas supplied to the first and second flow paths via the flow rate controller, based on the first, second, third, and fourth pressures and the temperature.Type: GrantFiled: May 27, 2019Date of Patent: May 10, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Norihiko Amikura, Risako Matsuda, Kazuyuki Miura
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Publication number: 20210384017Abstract: The present invention efficiently captures a target object contained in an exhaust gas. A trap apparatus includes a tubular housing including a flow path through which an exhaust gas exhausted through an exhaust pipe flows, a plate-shaped first trap member arranged inside the housing so as to shield a central portion of the flow path when viewed in a direction along a central axis of the housing, and a plate-shaped second trap member arranged inside the housing at an interval from the first trap member in the direction along the central axis of the housing, the second trap member including an opening at a position corresponding to the first trap member.Type: ApplicationFiled: June 2, 2021Publication date: December 9, 2021Inventors: Takaaki NEZU, Yuta YAMATO, Akiyoshi KAWASHIMA, Hiroki INADUMA, Kazuyuki MIURA
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Publication number: 20210050190Abstract: A substrate processing method is provided. In the method, a process gas is supplied into a chamber. A pressure in the chamber is controlled to a first pressure by evacuating the chamber via a first exhaust line. Then, the pressure in the chamber is controlled to a second pressure that is higher than the first pressure by evacuating the chamber via a second exhaust line while closing the first exhaust line. Next, the pressure in the chamber is controlled to the first pressure by evacuating the chamber via the first exhaust line while closing the second exhaust line.Type: ApplicationFiled: August 11, 2020Publication date: February 18, 2021Inventors: Kazuyuki MIURA, Norihiko AMIKURA
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Patent number: 10876870Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.Type: GrantFiled: January 3, 2019Date of Patent: December 29, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Risako Miyoshi, Norihiko Amikura, Kazuyuki Miura, Masaaki Nagase, Satoru Yamashita, Yohei Sawada, Kouji Nishino, Nobukazu Ikeda
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Patent number: 10871786Abstract: A substrate processing system includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.Type: GrantFiled: March 22, 2019Date of Patent: December 22, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Risako Miyoshi, Norihiko Amikura, Kazuyuki Miura, Hiroshi Yazaki, Yasuhiro Shoji
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Patent number: 10801521Abstract: A heating device for heating a component in a turbo molecular pump for exhausting a gas includes a heat transfer member, a heater, a first seal member and a second seal member. The heat transfer member is provided in an opening of a housing of the turbo molecular pump and has one end fixed to the component and the other end exposed to an outside. The heater in the heat transfer member heats the component through the heat transfer member. The first seal member is provided between the heat transfer member and the opening along an outer peripheral surface of the heat transfer member. The second seal member between the heat transfer member and the opening is located close to the component compared to the first seal member. The second seal member suppresses movement of radicals in a gas into a space between the heat transfer member and the opening.Type: GrantFiled: April 12, 2017Date of Patent: October 13, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Tsutomu Mochizuki, Kazuhiro Chiba, Ryo Murakami, Kazuyuki Miura
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Publication number: 20200292403Abstract: In a substrate processing system according to an exemplary embodiment, gas supply units are configured to supply gases to chambers through first gas flow channels thereof, respectively. Chamber pressure sensors are configured to measure pressures in the chambers. A second gas flow channel is connected to the first gas flow channel of each of the gas supply units. A reference pressure sensor is configured to measure a pressure in the second gas flow channel. In a method according to an exemplary embodiment, each of the chamber pressure sensors is calibrated by using a measurement value thereof and a measurement value of the reference pressure sensor which are obtained in a state where pressures in a corresponding chamber, the first gas flow channel of a corresponding gas supply unit, and the second gas flow channel are maintained.Type: ApplicationFiled: March 2, 2020Publication date: September 17, 2020Applicant: Tokyo Electron LimitedInventors: Risako MATSUDA, Norihiko AMIKURA, Kazuyuki MIURA, Keita SHOUJI
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Publication number: 20200278225Abstract: The flow rate measurement method includes: measuring a first pressure of a gas filled in a first flow path connected to a flow rate controller and a second flow path connected to the first flow path; supplying a gas to the first and second flow paths via the flow rate controller and measuring a second pressure and a temperature of the gas filled in the first and second flow paths; after the gas is exhausted from the second flow path, measuring a third pressure of the gas filled in the second flow path; measuring a fourth pressure of the gas filled in the first and second flow paths; and calculating an amount of the gas supplied to the first and second flow paths via the flow rate controller, based on the first, second, third, and fourth pressures and the temperature.Type: ApplicationFiled: May 27, 2019Publication date: September 3, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Norihiko AMIKURA, Risako MATSUDA, Kazuyuki MIURA
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Publication number: 20190301912Abstract: A substrate processing system according to an exemplary embodiment includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.Type: ApplicationFiled: March 22, 2019Publication date: October 3, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Risako MIYOSHI, Norihiko AMIKURA, Kazuyuki MIURA, Hiroshi YAZAKI, Yasuhiro SHOJI
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Publication number: 20190212176Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method of an embodiment, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.Type: ApplicationFiled: January 3, 2019Publication date: July 11, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Risako MIYOSHI, Norihiko AMIKURA, Kazuyuki MIURA, Masaaki NAGASE, Satoru YAMASHITA, Yohei SAWADA, Kouji NISHINO, Nobukazu IKEDA
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Patent number: 9921089Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m (P1-P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.Type: GrantFiled: June 2, 2016Date of Patent: March 20, 2018Assignees: Fujikin Incorporated, National University Corporation Tohuku University, Tokyo Electron Ltd.Inventors: Tadahiro Ohmi, Masahito Saito, Shoichi Hino, Tsuyoshi Shimazu, Kazuyuki Miura, Kouji Nishino, Masaaki Nagase, Katsuyuki Sugita, Kaoru Hirata, Ryousuke Dohi, Takashi Hirose, Tsutomu Shinohara, Nobukazu Ikeda, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
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Publication number: 20170298958Abstract: A heating device for heating a component in a turbo molecular pump for exhausting a gas includes a heat transfer member, a heater, a first seal member and a second seal member. The heat transfer member is provided in an opening of a housing of the turbo molecular pump and has one end fixed to the component and the other end exposed to an outside. The heater in the heat transfer member heats the component through the heat transfer member. The first seal member is provided between the heat transfer member and the opening along an outer peripheral surface of the heat transfer member. The second seal member between the heat transfer member and the opening is located close to the component compared to the first seal member. The second seal member suppresses movement of radicals in a gas into a space between the heat transfer member and the opening.Type: ApplicationFiled: April 12, 2017Publication date: October 19, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Tsutomu MOCHIZUKI, Kazuhiro CHIBA, Ryo MURAKAMI, Kazuyuki MIURA
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Patent number: 9793102Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a stage provided in a chamber, and a conveying module configured to convey a plurality of wafers into the chamber and to set the plurality of wafers on the stage. The apparatus further includes a controller configured to divide treatment time for simultaneously treating the plurality of wafers on the stage into first to K-th treatment periods where K is an integer of two or more, and to change positions of one or more of the plurality of wafers on the stage by the conveying module according to the treatment periods.Type: GrantFiled: March 11, 2015Date of Patent: October 17, 2017Assignee: Toshiba Memory CorporationInventors: Kazuyuki Miura, Kensuke Takahashi
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Patent number: 9734993Abstract: A semiconductor manufacturing apparatus is capable of reducing power consumption. The semiconductor manufacturing apparatus 1 includes a processing chamber 2 that has a top surface 2a and forms a processing space S therein; a mounting table 3 provided in the processing space S; an upper electrode 20 provided above the mounting table 3 to face the mounting table 3; heaters 35 and 36 provided around the upper electrode 20 and below the top surface 2a of the processing chamber 2 and configured to heat the upper electrode 20; and a heat insulating unit 50, mounted on the top surface 2a of the processing chamber 2, having a plate-shaped member 51 and a heat insulating member 52 that is provided on one main surface 51a of the plate-shaped member 51.Type: GrantFiled: June 20, 2012Date of Patent: August 15, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Atsushi Kobayashi, Kazuyuki Miura, Akira Yasumuro
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Publication number: 20160274595Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m(P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.Type: ApplicationFiled: June 2, 2016Publication date: September 22, 2016Inventors: Tadahiro Ohmi, Masahito Saito, Shoichi Hino, Tsuyoshi Shimazu, Kazuyuki Miura, Kouji Nishino, Masaaki Nagase, Katsuyuki Sugita, Kaoru Hirata, Ryousuke Dohi, Takashi Hirose, Tsutomu Shinohara, Nobukazu Ikeda, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
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Patent number: 9383758Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m(P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.Type: GrantFiled: December 21, 2015Date of Patent: July 5, 2016Assignees: Fujikin Incorporated, National University Corporation Tohoku University, Tokyo Electron Ltd.Inventors: Tadahiro Ohmi, Masahito Saito, Shoichi Hino, Tsuyoshi Shimazu, Kazuyuki Miura, Kouji Nishino, Masaaki Nagase, Katsuyuki Sugita, Kaoru Hirata, Ryousuke Dohi, Takashi Hirose, Tsutomu Shinohara, Nobukazu Ikeda, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
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Publication number: 20160109886Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m(P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.Type: ApplicationFiled: December 21, 2015Publication date: April 21, 2016Inventors: Tadahiro Ohmi, Masahito Saito, Shoichi Hino, Tsuyoshi Shimazu, Kazuyuki Miura, Kouji Nishino, Masaaki Nagase, Katsuyuki Sugita, Kaoru Hirata, Ryousuke Dohi, Takashi Hirose, Tsutomu Shinohara, Nobukazu Ikeda, Tomokazu Imai, Toshihide Yoshida, Hisashi Tanaka
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Publication number: 20160062349Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a stage provided in a chamber, and a conveying module configured to convey a plurality of wafers into the chamber and to set the plurality of wafers on the stage. The apparatus further includes a controller configured to divide treatment time for simultaneously treating the plurality of wafers on the stage into first to K-th treatment periods where K is an integer of two or more, and to change positions of one or more of the plurality of wafers on the stage by the conveying module according to the treatment periods.Type: ApplicationFiled: March 11, 2015Publication date: March 3, 2016Inventors: KAZUYUKI MIURA, KENSUKE TAKAHASHI