Abstract: For example, an escape gear wheel part as a watch component includes a base member including a first surface and a second surface opposite the first surface, the base member being mainly composed of silicon, and a light reflecting layer provided at the first surface of the base member, the light reflecting layer having a three-layer structure in which a first silicon oxide layer, a silicon layer, and a second silicon oxide layer are layered in this order.

Abstract: A setting method for setting at least a part of a region in which a structure of a specimen exists as a target region, for an evaluation of an internal structure of the specimen includes setting an arbitrary position from the region in which the structure of the specimen exists, and setting the target region based on the set position.

Abstract: For example, an escape gear wheel part as a watch component includes a base member including a first surface and a second surface opposite the first surface, the base member being mainly composed of silicon, and a light reflecting layer provided at the first surface of the base member, the light reflecting layer having a three-layer structure in which a first silicon oxide layer, a silicon layer, and a second silicon oxide layer are layered in this order.

Abstract: An antireflection film includes a light shielding layer which is placed on a substrate and contains an electrical conductor, a first transmission layer which is placed on the light shielding layer and contains a dielectric, a semi-transmission layer which is placed on the first transmission layer and contains an electrical conductor, and a second transmission layer which is placed on the semi-transmission layer and contains a dielectric, wherein the light shielding layer and the semi-transmission layer have a larger extinction coefficient than the first transmission layer and the second transmission layer.

Abstract: A setting method for setting at least a part of a region in which a structure of a specimen exists as a target region, for an evaluation of an internal structure of the specimen includes setting an arbitrary position from the region in which the structure of the specimen exists, and setting the target region based on the set position.

Abstract: An antireflection film includes a light shielding layer which is placed on a substrate and contains an electrical conductor, a first transmission layer which is placed on the light shielding layer and contains a dielectric, a semi-transmission layer which is placed on the first transmission layer and contains an electrical conductor, and a second transmission layer which is placed on the semi-transmission layer and contains a dielectric, wherein the light shielding layer and the semi-transmission layer have a larger extinction coefficient than the first transmission layer and the second transmission layer.

Abstract: An infrared detecting element includes a recessed portion, a supporting section, and an infrared detecting section. A supporting section is located above the recessed portion such that a hollow space stands between the supporting section and the recessed portion. The infrared detecting section is provided on the supporting section and detects infrared rays. The recessed portion is covered with a water repellent film, and the supporting section is made of a material that has high rigidity compared to silicon and silicon oxide.

Abstract: An infrared detecting element includes a recessed portion, a supporting section, and an infrared detecting section. A supporting section is located above the recessed portion such that a hollow space stands between the supporting section and the recessed portion. The infrared detecting section is provided on the supporting section and detects infrared rays. The recessed portion is covered with a water repellent film, and the supporting section is made of a material that has high rigidity compared to silicon and silicon oxide.

Abstract: The infrared detecting element has a base plate; an insulating film that is provided on the base plate and has a recessed portion surrounding a hollow space; a supporting section that is held by a beam, one end of the beam being fixed to the insulating film, and is located in an area that opposes the hollow space; and an infrared detecting section that is provided on the supporting section and detects infrared rays, in which the recessed portion is covered with a water repellent film that includes polysilicon, and the beam and the supporting section include silicon nitride or silicon carbonitride.

Abstract: The infrared detecting element has a base plate; an insulating film that is provided on the base plate and has a recessed portion surrounding a hollow space; a supporting section that is held by a beam, one end of the beam being fixed to the insulating film, and is located in an area that opposes the hollow space; and an infrared detecting section that is provided on the supporting section and detects infrared rays, in which the recessed portion is covered with a water repellent film that includes polysilicon, and the beam and the supporting section include silicon nitride or silicon carbonitride.

Abstract: An image of an aperture pattern that includes an L/S pattern having a linewidth that exceeds the measurement resolution of a measurement device is generated in each of divided areas on a wafer via an optical system. A part of each of the divided areas on the wafer exposed via a projection optical system, and an image of the aperture pattern after removal of a part of the image of the L/S pattern is formed in each of the divided areas. An image of the pattern that is obtained by removing a part of the pattern is formed in each of the divided areas after the wafer is developed. Measurement is performed by a measurement device using the wafer as a sample, and the optical characteristics of the projection optical system (such as a best focus position, field of curvature, or astigmatism) are obtained.

Abstract: An organic electroluminescent device includes a substrate that is conductive at least on a first surface; a first insulating film located on the first surface of the substrate and including a portion of a first opening, a portion of a second opening, and a portion of a third opening; a semiconductor film located on the first insulating film and receiving a current from the first surface of the substrate via the portion of a first opening; a second insulating film located on the semiconductor film and in contact with the substrate via the portion of a second opening; a capacitance electrode located on the second insulating film; a gate electrode located on the second insulating film and overlapping the semiconductor film; an intermediate insulating film located on the gate electrode and capacitance electrode; a pixel electrode located on the intermediate insulating film and receiving a current via the semiconductor film; a light-emitting layer located on the pixel electrode; a common electrode located on the l

Abstract: A pattern area that includes a plurality of line patterns with a predetermined spacing therebetween formed on a wafer is imaged, and based on the imaging results, a contrast value of an image of the pattern area is computed, and the computed contrast value is converted into the linewidth of the line pattern based on known conversion information. Therefore, even if the pattern area is imaged using a microscope having a low resolving power, e.g. an image-forming type alignment sensor or the like, without using the SEM, the linewidth of the line pattern can be measured with high precision. Accordingly, linewidth measurement with low cost and high throughput becomes possible.

Abstract: An image (a latent image) of an aperture pattern that includes an L/S pattern having a linewidth (a space width A) that exceeds the measurement resolution of a measurement device is generated in each of divided areas on a wafer via an optical system (step 410). Next, a part of each of the divided areas on the wafer where the image of the aperture pattern is generated is respectively exposed via a projection optical system, and an image of the aperture pattern after removal of a part of the image of the L/S pattern is formed in each of the divided areas (step 412). With this operation, an image (a resist image) of the pattern that is obtained by removing a part of the pattern is formed in each of the divided areas after the wafer is developed. Then, measurement is performed by a simple measurement device using the wafer as a sample, and the optical characteristics of the projection optical system (such as a best focus position, field of curvature, or astigmatism) are obtained (step 426).

Abstract: An organic electroluminescence device including: a substrate having conductivity on at least one side; a first insulation film, formed on one side of the substrate, while having an aperture which partially exposes the same side of the substrate; a semiconductor film, formed on the first insulation film, while covering a part of the first insulation film; a second insulation film formed on the first insulation film, while covering the semiconductor film and contacting the same side of the substrate via the aperture; a capacitor electrode, formed on the aperture, while sandwiching the second insulation film so as to face the substrate; a gate electrode formed on the semiconductor film, so as to sandwich the second insulation film; and an organic electroluminescence element, formed on the second insulation film, electrically connected to the semiconductor film.

Abstract: An oligonucleotide analogue useful for the antisense method, etc., having excellent enzyme resistance, having potent selective binding affinity for single-stranded RNA, and further having an excellent triplex-forming capacity with double-stranded DNA, and a nucleoside analogue useful for its production are provided. Nucleoside analogues, which are compounds of the general formula (I) and salts thereof, and oligonucleotide analogues containing one or more of the nucleoside analogues: where Base is an aromatic heterocyclic group or the like optionally having a substituent; R1, R2 and R3 are each a hydrogen atom, a protective group for an amino group, a protective group for a hydroxyl group, a phosphate group, or —P(R4)R5 [where R4 and R5 are each a hydroxyl group, a protected hydroxyl group, a mercapto group, a protected mercapto group, etc.]; m=0 to 2; and n=1 to 3].

Abstract: For a plurality of divided areas on a wafer that is exposed by generating measurement pattern images, a predetermined statistic that includes the deviation of the luminance value of each pixel included in imaging data obtained by the imaging with respect to a predetermined reference value is computed, for example, the variance is computed, and optical characteristics of a projection optical system are obtained based on a computation result of the computed statistic of each of the divided areas (steps 504, 506, 512 and 514). Therefore, the optical characteristics can be measured with good repeatability even by a measurement device such as a microscope having a lower resolution compared with the SEM or the like, for example, an alignment sensor by an image-forming method of an exposure apparatus or the like.

Abstract: An organic electroluminescence device including: a substrate having conductivity on at least one side; a first insulation film, formed on one side of the substrate, while having an aperture which partially exposes the same side of the substrate; a semiconductor film, formed on the first insulation film, while covering a part of the first insulation film; a second insulation film formed on the first insulation film, while covering the semiconductor film and contacting the same side of the substrate via the aperture; a capacitor electrode, formed on the aperture, while sandwiching the second insulation film so as to face the substrate; a gate electrode formed on the semiconductor film, so as to sandwich the second insulation film; and an organic electroluminescence element, formed on the second insulation film, electrically connected to the semiconductor film.

Abstract: An organic electroluminescent device includes a substrate that is conductive at least on a first surface; a first insulating film located on the first surface of the substrate and including a portion of a first opening, a portion of a second opening, and a portion of a third opening; a semiconductor film located on the first insulating film and receiving a current from the first surface of the substrate via the portion of a first opening; a second insulating film located on the semiconductor film and in contact with the substrate via the portion of a second opening; a capacitance electrode located on the second insulating film; a gate electrode located on the second insulating film and overlapping the semiconductor film; an intermediate insulating film located on the gate electrode and capacitance electrode; a pixel electrode located on the intermediate insulating film and receiving a current via the semiconductor film; a light-emitting layer located on the pixel electrode; a common electrode located on the l

Abstract: An oligonucleotide analogue useful for the antisense method, etc., having excellent enzyme resistance, having potent selective binding affinity for single-stranded RNA, and further having an excellent triplex-forming capacity with double-stranded DNA, and a nucleoside analogue useful for its production are provided. Nucleoside analogues, which are compounds of the general formula (I) and salts thereof, and oligonucleotide analogues containing one or more of the nucleoside analogues: where Base is an aromatic heterocyclic group or the like optionally having a substituent; R1, R2 and R3 are each a hydrogen atom, a protective group for an amino group, a protective group for a hydroxyl group, a phosphate group, or —P(R4)R5 [where R4 and R5 are each a hydroxyl group, a protected hydroxyl group, a mercapto group, a protected mercapto group, etc.]; m=0 to 2; and n=1 to 3].