Patents by Inventor Keenan N. Woods

Keenan N. Woods has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210262084
    Abstract: Methods for depositing tellurium-containing films on a substrate are described. The substrate is exposed to a tellurium precursor and a reactant to form the tellurium-containing film (e.g., elemental tellurium, tellurium oxide, tellurium carbide, tellurium silicide, germanium telluride, antimony telluride, germanium antimony telluride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: February 1, 2021
    Publication date: August 26, 2021
    Applicants: Applied Materials, Inc., Wayne State University
    Inventors: Thomas Knisley, Keenan N. Woods, Mark Saly, Charles H. Winter, Apoorva Upadhyay
  • Publication number: 20210155646
    Abstract: Halide ligand free rhenium complexes are described as well as methods for depositing rhenium-containing films. Some embodiments provide a rhenium complex with a general formula of O3ReO-M-R1R2R3, where M is a group IV element, R1 is selected from H, alkyl, alkenyl, alkynyl, an aromatic ring, or alkoxy, and R2 and R3 are each independently selected from H, alkyl, alkenyl, alkynyl, an aromatic ring, or alkoxy, or R2 and R3 join together to form a ring structure or an oxo group. Some embodiments provide a rhenium complex with a general formula of Re(NR?)3(NHR?), where R? and R? are independently selected from H, alkyl, alkenyl, alkynyl, or an aromatic ring.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 27, 2021
    Applicants: Applied Materials, Inc., Wayne State University
    Inventors: Thomas Knisley, Keenan N. Woods, Mark Saly, Charles H. Winter, Stefan Cwik
  • Publication number: 20210140046
    Abstract: Silyl pseudohalides having a general formula of R4?nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.
    Type: Application
    Filed: November 12, 2020
    Publication date: May 13, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Keenan N. Woods, Cong Trinh, Mark Saly, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Lisa J. Enman
  • Publication number: 20210050211
    Abstract: Methods for depositing rhenium-containing thin films on a substrate are described. The substrate is exposed to a rhenium precursor and a reducing agent to form the rhenium-containing film (e.g., metallic rhenium, rhenium nitride, rhenium oxide, rhenium carbide). The exposures can be sequential or simultaneous. The rhenium-precursors are substantially free of halogen.
    Type: Application
    Filed: August 10, 2020
    Publication date: February 18, 2021
    Applicants: Applied Materials, Inc., Wayne State University
    Inventors: Thomas Knisley, Keenan N. Woods, Mark Saly, Charles H. Winter, Stefan Cwik
  • Publication number: 20210032749
    Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.
    Type: Application
    Filed: July 29, 2020
    Publication date: February 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Cong Trinh, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Ning Li, Mark Saly, Bhaskar Jyoti Bhuyan, Keenan N. Woods, Lisa J. Enman
  • Publication number: 20200395222
    Abstract: Embodiments of this disclosure provide methods for etching oxide materials. Some embodiments of this disclosure provide methods which selectively etch oxide materials over other materials. In some embodiments, the methods of this disclosure are performed by atomic layer etching (ALE). In some embodiments, the methods of this disclosure are performed within a processing chamber comprising a nickel chamber material.
    Type: Application
    Filed: June 11, 2020
    Publication date: December 17, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Keenan N. Woods, Zhenjiang Cui, Mark Saly
  • Publication number: 20200362458
    Abstract: Methods for depositing rhenium-containing thin films on a substrate are described. The substrate is exposed to a rhenium precursor and a reducing agent to form the rhenium-containing film (e.g., metallic rhenium, rhenium nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: May 14, 2020
    Publication date: November 19, 2020
    Applicants: Applied Materials, Inc., Wayne State University
    Inventors: Thomas Knisley, Keenan N. Woods, Mark Saly, Stefan Cwik, Charles H. Winter