Abstract: According to one embodiment, a rotary electric machine includes a rotor and a stator. The rotor includes a rotary shaft, a first core, a permanent magnet, and an intermediate member. The rotary shaft extends in a first direction. The first core is provided around the rotary shaft in a first plane perpendicular to the first direction. The permanent magnet is provided around the first core in the first plane. The intermediate member is provided between the rotary shaft and the first core. The intermediate member includes a first portion containing a carbon fiber, and a second portion aligned with the first portion in the first direction and containing a metal. The stator is provided around the rotor in the first plane.

Abstract: Metal coated resin particles include: spherical core resin particles; and a metal coated layer provided on a surface of each of the core resin particles, in which the metal coated layer consists of: a first silver layer formed on the surface of each of the core resin particles; a tin intermediate layer consisting of one or more of metallic tin and/or tin compounds selected from the group consisting of tin (Sn), tin oxide (SnxOy), and tin hydroxide (Snx(OH)y) formed on a surface of the first silver layer (where, 0.1<x<4, 0.1<y<5); and a second silver layer formed on a surface of the tin intermediate layer.

Abstract: Provided is a lens apparatus attachable and removable to a camera apparatus, the lens apparatus comprising a communication device configured to transmit, to an external device, information for light amount compensation of image data obtained by image pickup in the camera apparatus, in which the information includes information of a coefficient A0 of a term of 0-th-order with respect to an image height in a polynomial of n-th-order with respect to the image height, and in which a conditional expression 0.7<A0(Z)×(Fw/F(Z))2<1.3 is satisfied where A0(Z) represents the coefficient Ao at a zoom state Z, F(Z) represents an effective F-number at the zoom state Z, and Fw represents an effective F-number at a wide angle end.

Abstract: Provided is a lens apparatus attachable and removable to a camera apparatus, the lens apparatus comprising a communication device configured to transmit, to an external device, information for light amount compensation of image data obtained by image pickup in the camera apparatus, in which the information includes information of a coefficient A0 of a term of 0-th-order with respect to an image height in a polynomial of n-th-order with respect to the image height, and in which a conditional expression 0.7<A0(Z)×(Fw/F(Z))2<1.3 is satisfied where A0(Z) represents the coefficient A0 at a zoom state Z, F(Z) represents an effective F-number at the zoom state Z, and Fw represents an effective F-number at a wide angle end.

Abstract: Provided is an operation apparatus configured to perform an operation of driving an optical member in a lens apparatus, the operation apparatus including: an operation member for the operation; a detector configured to detect an amount of operation of the operation member; a communication device configured to receive a first information from the lens apparatus, the first information being an information on a state of the optical member; and a processor configured to: select, as a preset information for the operation, one of the first information and a second information based on a setting, the second information being an information on the amount of operation; and generate a command for the operation based on the selected one of the first information and the second information.

Abstract: Provided is a lens apparatus attachable and removable to a camera apparatus, the lens apparatus comprising a communication device configured to transmit, to an external device, information for light amount compensation of image data obtained by image pickup in the camera apparatus, in which the information includes information of a coefficient A0 of a term of 0-th-order with respect to an image height in a polynomial of n-th-order with respect to the image height, and in which a conditional expression 0.7<A0(Z)×(Fw/F(Z))2<1.3 is satisfied where A0(Z) represents the coefficient A0 at a zoom state Z, F(Z) represents an effective F-number at the zoom state Z, and Fw represents an effective F-number at a wide angle end.

Abstract: Provided is an operation apparatus configured to perform an operation of driving an optical member in a lens apparatus, the operation apparatus including: an operation member for the operation; a detector configured to detect an amount of operation of the operation member; a communication device configured to receive a first information from the lens apparatus, the first information being an information on a state of the optical member; and a processor configured to: select, as a preset information for the operation, one of the first information and a second information based on a setting, the second information being an information on the amount of operation; and generate a command for the operation based on the selected one of the first information and the second information.

Abstract: An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck.

Abstract: A method and device for treating a wafer-shaped article utilizes a novel clamping mechanism, which permits wafer shift to be performed with reduced wear to the chuck pins. A wafer is rotated on a spin chuck that has a plurality of pins positioned at a periphery of the wafer shaped article. The pins each have a head portion which, in a service position, extends radially inwardly of and above the wafer. Gas is supplied onto a surface of the wafer facing the spin chuck at a flow rate sufficient to displace the wafer upwardly into contact with the head portions of the pins. This serves to clamp the wafer against the head portions of the pins. However, the pins contact the wafer only on upwardly oriented wafer surfaces and the wafer is supported from below solely by the gas flow.

Abstract: An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck.

Abstract: Disclosed is a method for treating semiconductor wafer including: providing a layer that contains lanthanum oxide or a lanthanide oxide (e.g. Dy2O3, Pr2O3, Ce2O3) applying an aqueous solution, wherein the aqueous solution is carbonated water, whereby the layer that contains lanthanum oxide or a lanthanide oxide is removed at specific areas, so that the surface, on which the layer that contains lanthanum oxide or a lanthanide oxide has been deposited, is exposed.

Abstract: In an apparatus and method for treating a wafer-shaped article, a rotary chuck is configured to hold a wafer-shaped article of a predetermined diameter such that a surface of the wafer-shaped article facing the rotary chuck is spaced from an opposing peripheral surface of the rotary chuck. The opposing peripheral surface comprises a first surface overlapping an outer peripheral edge of a wafer-shaped article when positioned on the spin chuck and a second surface positioned radially inwardly of the first surface and meeting the first surface at an interface that is radially inward of and substantially concentric with a wafer-shaped article when positioned on the rotary chuck. The second surface is substantially more hydrophobic than the first surface.

Abstract: An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck.

Abstract: A method and device for treating a wafer-shaped article utilizes a novel clamping mechanism, which permits wafer shift to be performed with reduced wear to the chuck pins. A wafer is rotated on a spin chuck that has a plurality of pins positioned at a periphery of the wafer shaped article. The pins each have a head portion which, in a service position, extends radially inwardly of and above the wafer. Gas is supplied onto a surface of the wafer facing the spin chuck at a flow rate sufficient to displace the wafer upwardly into contact with the head portions of the pins. This serves to clamp the wafer against the head portions of the pins. However, the pins contact the wafer only on upwardly oriented wafer surfaces and the wafer is supported from below solely by the gas flow.

Abstract: Disclosed is a method for treating semiconductor wafer including: providing a layer that contains lanthanum oxide or a lanthanide oxide (e.g. Dy2O3, Pr2O3, Ce2O3) applying an aqueous solution, wherein the aqueous solution is carbonated water, whereby the layer that contains lanthanum oxide or a lanthanide oxide is removed at specific areas, so that the surface, on which the layer that contains lanthanum oxide or a lanthanide oxide has been deposited, is exposed.

Abstract: Method for drying a surface of a disc-shaped article includes covering the surface with a rinsing liquid, whereby a closed liquid layer is formed, and removing the rinsing liquid, wherein the rinsing liquid containing at least 50 wt. % water and at least 5 wt. % of a substance, wherein the substance lowers the surface energy of water, wherein the removing of the liquid is initiated by blowing gas onto the closed liquid layer, whereby the closed liquid layer is opened at on discrete area.

Abstract: The present invention provides a sputtering target for forming a phase-change film which generates few particles in sputtering and a method for manufacturing the same. The target of the invention has a composition containing in terms of atomic %, 20.2 to 24.2% of Ge, 20.2 to 24.2% of Sb, and the remainder including Te and inevitable impurities, and having a microstructure in which a Ge2Sb2Te5 phase having a hexagonal structure accounts for 90% or more in terms of mass %, and this target can be manufactured by subjecting a raw alloy powder to pressure sintering, and the raw alloy powder is obtained either by heat-treating an alloy ingot having the above composition and grinding the resulting alloy ingot, or by grinding the alloy ingot and heat-treating the obtained ground alloy powder and then pulverizing the alloy powder.

Abstract: According to the present invention, a process for changing the form of a processed film is performed to planarize it before the processed film which is formed on a wafer is processed in a manufacturing process of a semiconductor device. As the process for changing the form of the processed film, there may be exemplified a single wafer type wet etching process. The compatibility of the processed film with processing means is taken into consideration and, for instance, the wet etching process is applied to the processed film so as to eliminate parts incompatible with the processing means, so that a distribution in-plane of the processed film is previously improved.

Abstract: Disclosed is a method for drying a surface of a disc-shaped article comprising covering said surface with a rinsing liquid, whereby a closed liquid layer is formed, and removing said rinsing liquid, wherein said rinsing liquid containing at least 50 wt. % water and at least 5 wt. % of a substance, wherein the substance lowers the surface energy of water, wherein said removing of the liquid is initiated by blowing gas onto said closed liquid layer, whereby the closed liquid layer is opened at on discrete area.

Abstract: An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L1 at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L1, a diluting liquid L2 for the etchant liquid L1 is discharged at a thin portion of the film for processing.