Abstract: According to the invention, a polymerizable compound, a polymerizable composition, and a polymer that have a low melting point at a practical level, exhibit excellent solubility in a general-purpose solvent, can be produced at low cost, and can produce an optical film that exhibits excellent transparency, and achieves uniform conversion of polarized light over a wide wavelength band, and an optically anisotropic article can be provided. In formula (I), Y1 to Y8 are, —O—, —O—C(?O)—, —C(?O)—O—, etc., G1 and G2 are a divalent linear aliphatic group of 1-20 carbon atoms, Z1 and Z2 are an alkenyl group of 2-10 carbon atoms that is substituted with a halogen atom, or unsubstituted, Ax is an organic group of 2-30 carbon atoms that includes at least one aromatic ring, Ay is a hydrogen atom, an alkyl group of 1-20 carbon atoms, etc.

Abstract: The present invention relates to: a copolymer comprising repeating units (I) and (II) in its molecule, wherein the content of the repeating units (I) and (II) are 5 to 90 mol % and 95 to 10 mol %, respectively, and a 0.5 g/dl methylene chloride solution of the copolymer having a reduced viscosity (?sp/c) at 20° C. of 0.3 to 2.0 dl/g; an optically anisotropic article comprising one type or two or more types of the copolymer, or a mixture that includes one type or two or more types of the copolymer, and an additional polymer; and an oriented polymer film obtained by stretching the film-like optically anisotropic article.

Abstract: The present invention relates to a polymerizable compound represented by a formula (I). The present invention provides a polymerizable compound, a polymerizable composition, a polymer, and an optically anisotropic article that are capable of obtaining an optical film having a low melting point, having excellent solubility, capable of being manufactured at low cost, and capable of uniform polarized light conversion across a broad wavelength region. [In formula: Y1 to Y6 are independently a chemical single bond, —O—, —O—C(?O)—, —C(?O)—O— etc.; G1 and G2 are independently a divalent C1-C20 aliphatic group etc.; Z1 and Z2 are independently C2-C10 alkenyl group that is substituted with a halogen atom etc.; Ax is a C2-C30 organic group that includes at least one aromatic ring selected from a group consisting of an aromatic hydrocarbon ring and an aromatic hetero ring; Ay is a hydrogen atom, a C1-C20 alkyl group, a C2-C20 alkenyl group, a C3-C12 cycloalkyl group etc.; A1 is a trivalent aromatic group etc.

Abstract: The invention is a polymerizable compound represented by formula (I); a polymerizable composition comprising the polymerizable compound and an initiator; a polymer obtained by polymerizing the polymerizable compound or the polymerizable composition, and an optically anisotropic article comprising the polymer. In the formula, Q1 to Q3 are a hydrogen atom, and the like; X is a C4-12 divalent aromatic group, and the like; Y1 to Y12 are a chemical single bond, —O—, —O—C(?O)—, —C(?O)—O—, and the like; G1 to G4 are a C1-20 divalent aliphatic group, and the like; Z1 to Z4 are a C2-10 alkenyl group, and the like; A1 is a trivalent aromatic group, and the like; A2 to A7 are a C4-30 divalent aromatic group, and the like; and n is 0 or 1.

Abstract: A binder composition for a non-aqueous battery electrode containing a binder and an ether compound represented by the formula (1), and an electrolyte solution composition for a non-aqueous battery containing an ether compound represented by the formula (1), wherein m and n each independently represent 0 or 1, and R1 represents a divalent linear hydrocarbon group which may have in the bond thereof one or more intervening groups selected from the group consisting of an oxygen atom, a sulfur atom, and a carbonyl group.

Abstract: The present invention relates to: a polymerizable compound represented by a formula (I); a polymerizable composition comprising the polymerizable compound and an initiator; a polymer obtained by polymerizing the polymerizable compound or the polymerizable composition; and an optically anisotropic article comprising the polymer [in the formula, Y1 to Y8 are a chemical single bond, —O—, —O—C(?O)—, —C(?O)—O—, or the like; G1 and G2 are a divalent aliphatic group having 1 to 20 carbon atoms, or the like; Z1 and Z2 are an alkenyl group having 2 to 10 carbon atoms, or the like; A1 is a tetravalent aromatic group, or the like; A2 and A3 are a divalent alicyclic hydrocarbon group having 3 to 30 carbon atoms, or the like; A4 and A5 are a divalent aromatic group having 4 to 30 carbon atoms, or the like; Ax1 and Ax2 are an organic group having 2 to 30 carbon atoms that includes an aromatic ring, or the like; Ay1 and Ay2 are a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or the like; Q1 and Q2 are a hydrogen

Abstract: The present invention pertains to: a polymerizable compound represented by a formula (I); a polymerizable composition comprising the polymerizable compound and an initiator; a polymer obtained by polymerizing the polymerizable compound or the polymerizable composition; and an optically anisotropic article comprising the polymer. The present invention provides a polymerizable compound, a polymerizable composition, and a polymer that have a practical low melting point, exhibit excellent solubility in a general-purpose solvent, can be produced at low cost, and can produce an optical film that achieves uniform conversion of polarized light over a wide wavelength band, and also provide an optically anisotropic article. [In the formula: Y1 to Y8 are a chemical single bond, —O—, —O—C(?O)—, —O—C(?O)—O—, etc.; G1 and G2 are a divalent aliphatic group having 1 to 20 carbon atoms, etc.; Z1 and Z2 are an alkenyl group having 2 to 10 carbon atoms that is substituted with a halogen atom, or unsubstituted, etc.

Abstract: A semiconductor memory device according to an embodiment includes: a memory cell array including a plurality of first lines, a plurality of second lines, and memory cells disposed at each of intersections of the first lines and the second lines; and a control circuit configured to apply a first voltage to a selected first line, apply a second voltage having a voltage value which is smaller than that of the first voltage to a selected second line, and apply a third voltage and a fourth voltage to a non-selected first line and a non-selected second line, respectively. The control circuit is configured to apply a fifth voltage to one of the non-selected first lines that is adjacent to the selected first line, and apply a sixth voltage to one of the non-selected second lines that is adjacent to the selected second line.

Abstract: The present invention relates to: a copolymer comprising repeating units (I) and (II) in its molecule, wherein the content of the repeating units (I) and (II) are 5 to 90 mol % and 95 to 10 mol %, respectively, and a 0.5 g/dl methylene chloride solution of the copolymer having a reduced viscosity (?sp/c) at 20° C. of 0.3 to 2.0 dl/g; an optically anisotropic article comprising one type or two or more types of the copolymer, or a mixture that includes one type or two or more types of the copolymer, and an additional polymer; and an oriented polymer film obtained by stretching the film-like optically anisotropic article.

Abstract: A non-volatile semiconductor memory device includes a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, wherein the memory cell includes a current rectifying element and a variable resistance element, and an atomic composition ratio of nitrogen is higher than that of oxygen in a part of a sidewall of the current rectifying element.

Abstract: The present invention relates to: a polymerizable compound (I), wherein Y1 to Y6 are a chemical single bond, —O—C(?O)—, —C(?O)—O— or the like, G1 and G2 are a divalent aliphatic group, Z1 and Z2 are an alkenyl group, Ax is a fused ring group represented by a formula (II), wherein X is —NR3—, an oxygen atom, a sulfur atom or the like, R3 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and D is a substituted or unsubstituted ring having 1 to 20 carbon atoms that includes at least one nitrogen atom, Ay is a hydrogen atom, an alkyl group, A1 is a trivalent aromatic group or the like, A2 and A3 are a divalent aromatic group having 6 to 30 carbon atoms or the like, and Q1 is a hydrogen atom, or an alkyl group having 1 to 6 carbon atoms.

Abstract: A polymerizable compound has a practical low melting point, excellent solubility in a general-purpose solvent, and can produce an optical film at low cost, exhibits low reflected luminance, and achieves uniform conversion of polarized light over a wide wavelength band, an optically anisotropic article. A carbonyl compound is useful as a raw material for producing the polymerizable compound. (In the formula (I), Y1 to Y8 represent —C(?O)—O—, G1 and G2 represent a C1-20 divalent linear aliphatic group, Z1 and Z2 represent a C2-10 alkenyl group that is unsubstituted, or substituted with a halogen atom, Ax represents a C2-30 organic group with at least one aromatic ring, Ay represents a hydrogen atom or C1-20 alkyl group, A1 represents a trivalent aromatic group, A2 and A3 represent a C3-30 divalent alicyclic hydrocarbon group, A4 and A5 represent a C6-30 divalent aromatic group or the like, and Q1 represents a hydrogen atom.

Abstract: The present invention provides a polymerizable compound represented by the following formula (I), a polymerizable composition that includes the polymerizable compound and an initiator, a polymer obtained by polymerizing the polymerizable compound or the polymerizable composition, and an optically anisotropic article that includes the polymer. The polymerizable compound, polymerizable composition, and polymer have a practical low melting point, exhibit an excellent solubility in a general-purpose solvent, can be produced at low cost, and may produce an optical film that achieves uniform conversion of polarized light over a wide wavelength band, and an optically anisotropic article.

Abstract: A semiconductor memory device according to an embodiment includes a memory cell array including memory cells, the memory cells each configured having a current rectifier element and a variable resistance element connected in series therein. Each of the memory cells has formed on a side surface thereof: a first insulating film provided on a side surface of the current rectifier element and the variable resistance element and having a composition ratio of a non-silicon element to silicon which is a first value; a silicon oxide film provided on a side surface of the first insulating film; and a second insulating film provided on a side surface of the silicon oxide film and having a composition ratio of a non-silicon element to silicon which is a second value. The first value is smaller than the second value.

Abstract: A semiconductor memory device according to an embodiment includes: a memory cell array including a plurality of first lines, a plurality of second lines, and memory cells disposed at each of intersections of the first lines and the second lines; and a control circuit configured to apply a first voltage to a selected first line, apply a second voltage having a voltage value which is smaller than that of the first voltage to a selected second line, and apply a third voltage and a fourth voltage to a non-selected first line and a non-selected second line, respectively. The control circuit is configured to apply a fifth voltage to one of the non-selected first lines that is adjacent to the selected first line, and apply a sixth voltage to one of the non-selected second lines that is adjacent to the selected second line.

Abstract: A condensed heterocyclic compound which is shown by the following formula (I) and a composition containing an (a) organic material and (b) at least one type of the condensed heterocyclic compound are provided. (Y indicates a chemical single bond, —S(?O)—, or —SO2—. Ra and Rb indicate substitutable C1 to C30 organic groups. Za and Zb indicate chemical single bonds or —SO2—. X1 and X2 indicate hydrogen atoms etc. n and m respectively independently indicate integers of 0 to 2, where one of n and m is not 0).

Abstract: A semiconductor memory device according to an embodiment includes a memory cell array including memory cells, the memory cells each configured having a current rectifier element and a variable resistance element connected in series therein. Each of the memory cells has formed on aside surface thereof: a first insulating film provided on aside surface of the current rectifier element and the variable resistance element and having a composition ratio of a non-silicon element to silicon which is a first value; a silicon oxide film provided on a side surface of the first insulating film; and a second insulating film provided on aside surface of the silicon oxide film and having a composition ratio of a non-silicon element to silicon which is a second value. The first value is smaller than the second value.

Abstract: A condensed heterocyclic compound which is shown by the following formula (I) and a composition containing an (a) organic material and (b) at least one type of the condensed heterocyclic compound are provided. (Y indicates a chemical single bond, —S(?O)—, or —SO2—. Ra and Rb indicate substitutable C1 to C30 organic groups. Za and Zb indicate chemical single bonds or —SO2—. X1 and X2 indicate hydrogen atoms etc. n and m respectively independently indicate integers of 0 to 2, where one of n and m is not 0).

Abstract: A semiconductor memory device according to an embodiment includes: a memory cell array including a plurality of first lines, a plurality of second lines, and memory cells disposed at each of intersections of the first lines and the second lines; and a control circuit configured to apply a first voltage to a selected first line, apply a second voltage having a voltage value which is smaller than that of the first voltage to a selected second line, and apply a third voltage and a fourth voltage to a non-selected first line and a non-selected second line, respectively. The control circuit is configured to apply a fifth voltage to one of the non-selected first lines that is adjacent to the selected first line, and apply a sixth voltage to one of the non-selected second lines that is adjacent to the selected second line.

Abstract: A nonvolatile semiconductor memory device includes a memory cell array including memory cells having a variable resistance element provided at intersections of crossing first and second lines, the memory cell array including third lines, fourth and fifth lines, and first and second diodes; and a control circuit which, when the memory cells include a selected memory cell, a selected first line connected to the selected memory cell and an unselected first line, and a selected second line connected to the selected memory cell and an unselected second line, supplies a first voltage to the selected first line, and supplies a second voltage to the unselected first line, and when the third lines include a selected third line electrically connected to the selected second line via one of the fourth line and a first diode, supplies a third voltage to the selected fourth line.