Abstract: Provided are a processing method, a processing apparatus and a processing program which can perform pole figure measurement continuously without overlapping of an angle a in a pole figure with the small number of times of ? scan, thereby enabling the efficient measurement. The processing method for determining conditions of pole figure measurement by X-ray diffraction, includes the steps of. receiving input of a diffraction angle 2?; and determining an angle ? formed by an incident X-ray and an x-axis, and a tilt angle ? of a sample in each ? scan for a rotation angle ? within a sample plane so as to make a range of an angle a continuous from ?=90° to ?=0° without overlapping, the angle ? being formed by the sample plane and a scattering vector, the range of the angle ? are detectable at a time on a two-dimensional detection plane in the pole figure measurement at the diffraction angle 2?, in which determining the angle ? and the tilt angle ? is repeated.

Abstract: A method for displaying measurement results from X-ray diffraction measurement, in which a sample is irradiated with X-rays and the X-rays diffracted by the sample are detected by an X-ray detector, comprises: (1) forming a one-dimensional diffraction profile by displaying, on the basis of output data from an X-ray detector, a profile in which one orthogonal coordinate axis shows 2? angle values and another orthogonal coordinate axis shows X-ray intensity values; (2) forming a two-dimensional diffraction pattern by linearly displaying X-ray intensity data, for each 2? angle value and on the basis of output data from the X-ray detector; the X-ray intensity data being present in the circumferential direction of a plurality of Debye rings formed at each 2? angle by diffracted X-rays; and (3) displaying the two-dimensional diffraction pattern and the one-dimensional diffraction profile so as to be aligned such that the 2? angle values of both coincide with each other.

Abstract: A method for displaying measurement results from X-ray diffraction measurement, in which a sample is irradiated with X-rays and the X-rays diffracted by the sample are detected by an X-ray detector, comprises: (1) forming a one-dimensional diffraction profile by displaying, on the basis of output data from an X-ray detector, a profile in which one orthogonal coordinate axis shows 2? angle values and another orthogonal coordinate axis shows X-ray intensity values; (2) forming a two-dimensional diffraction pattern by linearly displaying X-ray intensity data, for each 2? angle value and on the basis of output data from the X-ray detector; the X-ray intensity data being present in the circumferential direction of a plurality of Debye rings formed at each 2? angle by diffracted X-rays; and (3) displaying the two-dimensional diffraction pattern and the one-dimensional diffraction profile so as to be aligned such that the 2? angle values of both coincide with each other.

Abstract: A crystalline phase contained in a sample is identified, from X-ray diffraction data of the sample which contain data of a plurality of ring-shaped diffraction patterns, using a database in which are registered data related to peak positions and peak intensity ratios of X-ray diffraction patterns for a plurality of crystalline phases. Peak positions and peak intensities for a plurality of the diffraction patterns are detected from the X-ray diffraction data (step 102), and the circumferential angle versus intensity data of the diffraction patterns is created (step 103). The diffraction patterns are grouped into a plurality of clusters on the basis of the circumferential angle versus intensity data (step 105). Crystalline phase candidates contained in the sample are searched from the database on the basis of sets of ratios of peak positions and peak intensities of the diffraction patterns grouped into the same cluster (step 106).

Abstract: Provided are a processing method, a processing apparatus and a processing program which can perform pole figure measurement continuously without overlapping of an angle ? in a pole figure with the small number of times of ? scan, thereby enabling the efficient measurement. The processing method for determining conditions of pole figure measurement by X-ray diffraction, includes the steps of: receiving input of a diffraction angle 2?; and determining an angle ? formed by an incident X-ray and an x-axis, and a tilt angle ? of a sample in each ? scan for a rotation angle ? within a sample plane so as to make a range of an angle ? continuous from ?=90° to ?=0° without overlapping, the angle ? being formed by the sample plane and a scattering vector, the range of the angle ? are detectable at a time on a two-dimensional detection plane in the pole figure measurement at the input angle 2?, in which determining the angle ? and the angle ? is repeated.

Abstract: A crystalline phase contained in a sample is identified, from X-ray diffraction data of the sample which contain data of a plurality of ring-shaped diffraction patterns, using a database in which are registered data related to peak positions and peak intensity ratios of X-ray diffraction patterns for a plurality of crystalline phases. Peak positions and peak intensities for a plurality of the diffraction patterns are detected from the X-ray diffraction data (step 102), and the circumferential angle versus intensity data of the diffraction patterns is created (step 103). The diffraction patterns are grouped into a plurality of clusters on the basis of the circumferential angle versus intensity data (step 105). Crystalline phase candidates contained in the sample are searched from the database on the basis of sets of ratios of peak positions and peak intensities of the diffraction patterns grouped into the same cluster (step 106).

Abstract: A single-layered thermally adhesive polyimide film; a method for producing the thermally adhesive polyimide film; and a method for producing a polyimide metal laminate produced using the thermally adhesive polyimide film. The single-layer thermally adhesive polyimide film is produced by polymerizing a tetracarboxylic acid dianhydride component and a diamine component, wherein the tetracarboxylic acid dianhydride component includes 2,3,3?,4?-biphenyltetracarboxylic acid dianhydride and 3,3?,4,4?-biphenyltetracarboxylic acid dianhydride and the diamine component includes an aromatic diamine compound represented by the following formula (I) as a main component wherein X is O, CO, C(CH3)2, CH2, SO2, S, or a direct bond, and in cases of two or more modes of bonding, each is the same or different; and n is an integer of 0 to 4.

Abstract: The present invention relates to a heat-dissipating substrate for LED, comprising a polyimide film, a copper foil or a copper alloy foil which is laminated on one side of the polyimide film, and an aluminum foil or an aluminum alloy foil which is laminated on the other side of the polyimide film, in which the thermal resistance between the surface of the copper foil or the copper alloy foil and the surface of the aluminum foil or the aluminum alloy foil is 1.8° C./W or less.

Abstract: A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate (8); an insulating layer (6) formed on the semiconductor substrate (8) in contact with the surface of the semiconductor substrate; and a piezoelectric resonator stack (14) formed above the insulating layer and having a lower electrode (10), a piezoelectric layer (2) and an upper electrode (12) in this order from the insulating layer side. An oscillation space (4) is formed corresponding to an oscillation region where the lower electrode (10) and the upper electrode (12) of the piezoelectric resonator stack (14) overlap each other in the thickness direction. The fixed charge density in the insulating layer (6) is 1×1011 cm?2 or less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300° C.

Abstract: A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate (8); an insulating layer (6) formed on the semiconductor substrate (8) in contact with the surface of the semiconductor substrate; and a piezoelectric resonator stack (14) formed above the insulating layer and having a lower electrode (10), a piezoelectric layer (2) and an upper electrode (12) in this order from the insulating layer side. An oscillation space (4) is formed corresponding to an oscillation region where the lower electrode (10) and the upper electrode (12) of the piezoelectric resonator stack (14) overlap each other in the thickness direction. The fixed charge density in the insulating layer (6) is 1×1011 cm?2 or less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300° C.

Abstract: A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.

Abstract: A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1/D0 is 0.1 to 0.5.

Abstract: The present invention is to provide a sustained release preparation comprising a drug-containing core substance and a multilayered coating layer covering the core substance, wherein all adjacent layers in the multilayered coating layer contain mutually different hydrophobic organic compound-water-soluble polymer mixtures; and, a method of producing a sustained release preparation, having a multilayered coating layer in which adjacent layers contain different hydrophobic organic compound-water-soluble polymer mixtures, which comprises spray-coating a solution containing a hydrophobic organic compound-water-soluble polymer mixture onto a drug-containing core substance, continuing to spray-coat a solution containing a different hydrophobic organic compound-water-soluble polymer mixture onto the resulting coating layer, and repeating this step.

Abstract: Method of producing a piezoelectric thin film device comprises a step of forming an insulating layer (12) capable of being etched by a specific chemical substance on the upper surface of a substrate (11); a step of forming a sacrificial layer (13) made of a substance having a higher etching rate by the specific chemical substance than the insulating layer on a partial region of the insulating layer; a step of forming a lower electrode (15) on a region including the sacrificial layer; a step of forming the piezoelectric thin film (16) on a region including a part of the lower electrode; a step of forming an upper electrode (17) on a region including a part of the piezoelectric thin film; a step of forming via hole (18), which penetrates the piezoelectric thin film and lower electrode, so as to expose a part of the sacrificial layer; and a step of forming a space (20) for oscillation by etching both the sacrificial layer and the insulating layer with the same specific chemical substance by introducing the speci

Abstract: A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.

Abstract: A method of producing a thin film bulk acoustic resonator having a piezoelectric layer, a first electrode joined to a first surface of the piezoelectric layer, and a second electrode joined to a second surface of the piezoelectric layer, which is located at the opposite side to the first surface, including the steps of forming a pit on a surface of a substrate; filling the pit with a sacrificial layer; polishing a surface of the sacrificial layer so that the RMS variation of a height of the surface of the sacrificial layer is equal to 25 nm or less; forming the first electrode over a partial area of the surface of the sacrificial layer and a partial area of the surface of the substrate; forming the piezoelectric layer on the first electrode so that RMS variation of a height of the second surface of the piezoelectric layer is equal to 5% or less of a thickness of the piezoelectric layer; forming the second electrode on the piezoelectric layer; and removing the sacrificial layer from the inside of the pit by et

Abstract: A piezoelectric thin film device (10) comprising a substrate (12) having a vibration space (20), and a piezoelectric lamination structure (14) formed on the upper surface of the substrate, the piezoelectric lamination structure comprising a piezoelectric film (16) and a lower electrode (15) and upper electrode (17) which are formed on opposite surfaces thereof, respectively, the vibration space (20) being so formed as to allow the vibration of a vibrating section (23) constituted by including at least part of the piezoelectric lamination structure (14) and part of an insulating layer (13). The vibrating space (20) is composed of a first via hole (21) formed from the lower surface of the substrate (12) toward the upper surface thereof so as to form an intermediate surface (25) in the substrate, and a second via hole (22) formed from the intermediate surface (23) toward the upper surface of the substrate so as to be positioned inside the first via hole (21) as seen vertically.

Abstract: Method of producing a piezoelectric thin film device comprises a step of forming an insulating layer (12) capable of being etched by a specific chemical substance on the upper surface of a substrate (11); a step of forming a sacrificial layer (13) made of a substance having a higher etching rate by the specific chemical substance than the insulating layer on a partial region of the insulating layer; a step of forming a lower electrode (15) on a region including the sacrificial layer; a step of forming the piezoelectric thin film (16) on a region including a part of the lower electrode; a step of forming an upper electrode (17) on a region including a part of the piezoelectric thin film; a step of forming via hole (18), which penetrates the piezoelectric thin film and lower electrode, so as to expose a part of the sacrificial layer; and a step of forming a space (20) for oscillation by etching both the sacrificial layer and the insulating layer with the same specific chemical substance by introducing the speci

Abstract: A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1/D0 is 0.1 to 0.5.

Abstract: A thin film bulk acoustic resonator comprises a substrate (12) of a silicon single crystal, a base film (13) formed on the substrate (12) and composed of a dielectric film mainly containing silicon oxide, and a piezoelectric stacked structure (14) formed on the base film (13). A vibratory section (21) composed of a part of the base film (13) and a part of the piezoelectric stacked structure (14). The piezoelectric stacked structure (14) includes a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed in this order from below. The substrate (12) had a via hole (20) in the region corresponding to the vibratory section (21). The via hole forms a space for allowing vibration of the vibratory section (21). The piezoelectric film (16) is an aluminum nitride thin film containing 0.2 to 3.0 atom % of alkaline earth metal and/or a rare earth metal.