Abstract: Provided is an alumina sintered body which has a high heat conductivity and a high infrared ray emissivity and is excellent in electrical insulation property and chemical resistance. An alumina sintered body contains cubic aluminum nitride.

Abstract: Provided is an alumina sintered body which has a high heat conductivity and a high infrared ray emissivity and is excellent in electrical insulation property and chemical resistance. An alumina sintered body contains cubic aluminum nitride.

Abstract: A method of manufacturing an optical disc includes molding a first disc substrate by a first mold simultaneously with a second disc substrate by a second mold while controlling the temperature of the first and second molds by passing a temperature-controlling medium through temperature controlling flow passages provided in the vicinity of a boundary between the first and second molds.

Abstract: A method of manufacturing an optical disc includes molding a first disc substrate by a first mold simultaneously with a second disc substrate by a second mold while controlling the temperature of the first and second molds by passing a temperature-controlling medium through temperature controlling flow passages provided in the vicinity of a boundary between the first and second molds.

Abstract: In an optical disc molding device, a heating medium from a low-temperature controller is made to flow in temperature controlling flow passages (passages 3a) formed at locations corresponding to boundary parts of two fixed molds 7 mounted parallel to each other on a fixed platen 3 and in temperature controlling flow passages (passages 6a) formed at locations corresponding to boundary parts of two movable molds 8 mounted parallel to each other on a movable platen 6 to supplement heat exchange.

Abstract: In an optical disc molding device, a heating medium from a low-temperature controller is made to flow in temperature controlling flow passages (passages 3a) formed at locations corresponding to boundary parts of two fixed molds 7 mounted parallel to each other on a fixed platen 3 and in temperature controlling flow passages (passages 6a) formed at locations corresponding to boundary parts of two movable molds 8 mounted parallel to each other on a movable platen 6 to supplement heat exchange.

Abstract: A disposal method of a waste optical disc is useful when a substrate material is collected from the disc. A space is created between a recording layer and a reflective layer between both of which there exists the smallest mutual adhesion by cutting a surface of a protective layer side of an optical disc. Then, the reflective layer and the protective layer are peeled off and removed from the optical disc by introducing air into the space therebetween. Then, the recorded layer remaining on a substrate layer can be removed by cutting.

Abstract: Zinc alloy powder for alkaline batteries containing Bi at a rate of 0.01-0.1% by weight, In at a rate of 0.01-0.1% by weight, Mg at a rate of 0.0005-0.03 % by weight and unavoidable impurities, such as Pb, Cd and Cu, capable of improving high-rate performance and being suitable for using as a cathode active substance for alkaline batteries is provided.

Abstract: An optical information recording substrate and method of producing the substrate, the substrate having a legible matter formed in a groove area thereof or a pit array area thereof, wherein the legible matter includes a plurality of grooves or pit arrays being partially different in the breadth or depth thereof. The grooves or arrays may be partially dislocated in the radial direction of the optical information recording substrate from a predetermined track. The visually legible matter may include a plurality of laser generated pit arrays wherein remaining portions of the legible matter have a plurality of continuous grooves formed therein. The legible matter may also include a plurality of continuous grooves wherein remaining portions of the legible matter includes a plurality of laser generated pit arrays formed therein.

Abstract: An optical information recording substrate having a legible matter formed in a groove area thereof or a pit array area thereof, wherein the legible matter includes a plurality of grooves or pit arrays being partially different in the breadth or depth thereof. The grooves or arrays may be partially dislocated in the radial direction of the optical information recording substrate from a predetermined track. The visually legible matter may include a plurality of laser generated pit arrays wherein remaining portions of the legible matter have a plurality of continuous grooves formed therein. The legible matter may also include a plurality of continuous grooves wherein remaining portions of the legible matter includes a plurality of laser generated pit arrays formed therein.

Abstract: An ion implantation stopper is formed on a gate electrode extending on a substrate. When ions are implanted into the substrate to form an LDD layer or source and drain regions in the substrate, the stopper functions to prevent the gate electrode from being exposed to ion implantation. The prevention of the exposure of the gate electrode to the ion implantation ensures the prevention of channeling in the gate electrode. The invention includes forming a first protective film on the gate of an NMOS, implanting to form LDD region for the NMOS, implanting to form source and drain regions of a PMOS, forming a second protective film on the gate of the NMOS, implanting to form source and drain regions of the NMOS, the first and second protective films prevent the gate electrode of the NMOS from being exposed to ion implantation during the respective implanting steps so that channeling is prevented from occurring in the gate electrode of the NMOS.

Abstract: Semiconductors are treated with such surface-treating solutions as ultra-pure water, dilute hydrofluoric acid and an organic solvent and then subjected to removal of the surface-treating solutions remaining on the surface of the semiconductor in an inert gas atmosphere of high purity while contacting the surface of the surface-treated semiconductor only with the inert gas of high purity, whereby contamination with impurities on atom level from the atmosphere can be prevented.

Abstract: An ion implantation stopper is formed on a gate electrode extending on a substrate. When ions are implanted into the substrate to form an LDD layer or source and drain regions in the substrate, the stopper functions to prevent the gate electrode from being exposed to ion implantation. The prevention of the exposure of the gate electrode to the ion implantation ensures the prevention of channeling in the gate electrode.

Abstract: This invention uses as the anode active material a zinc alloy containing Ni, at least one element selected from In, Pb, Ga and Cd and, optionally further, one element selected from Al, Mg, Ca, Ba and Sr for the anode of a conventional zinc-alkaline battery which employs zinc as the anode active material, aqueous alkaline solution as the electrolyte, and manganese dioxide, silver oxide, oxygen and so forth as the cathode active material. The use of such zinc alloy permits the reduction of the amount of mercury to be used for amalgamation of the anode zinc surface which is made for the purpose of corrosion inhibition, thereby enabling the provision of a low-pollution zinc-alkaline battery.

Abstract: An anode active material of zinc powder with indium coexisting therewith, the metals being amalgamated, an alkaline cell using the anode active material therein, and a method for the production of the anode active material or the alkaline cell.

Abstract: A method of masking semiconductor devices provided with selectively formed oxide film patterns, can be made by very precisely copying from selective oxidation mask patterns.The method in accordance with the present invention comprisesa first step of forming an anti-oxidation film pattern in a semiconductor body, with at least brim portions of said anti-oxidation film pattern buried therein, anda second step of oxidizing regions on a surface of said semiconductor body to form oxidized regions by use of said anti-oxidation film pattern as a selective oxidation mask, thereby forming at least a part of said oxidized regions of said semiconductor body in a manner to have their bottom disposed deeper than that of said anti-oxidation film pattern in said semiconductor body.