Patents by Inventor Keiichi Nii
Keiichi Nii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240060024Abstract: Provided are a cell culture member having excellent cell culture performance and its long-term stability, and a method for modifying the surface thereof. The cell culture member according to the present invention is a cell culture member having at least a holding region that holds an adherent cell and contains a polymer compound, wherein at least a part of the holding region is a surface-modified region in which a functional group containing a nitrogen atom is directly chemically bonded to a part of carbon atoms and/or silicon atoms constituting the polymer compound, and the present invention can provide a cell culture member that improves adhesiveness of the adherent cell to the surface-modified region, suppresses deterioration over time of adhesiveness, and is excellent in cell culture performance and its long-term stability.Type: ApplicationFiled: December 23, 2021Publication date: February 22, 2024Inventors: Naoto SAITO, Takeshi UEMURA, Kazutoshi HISANO, Yoshinori SATO, Masashi YAMAMOTO, Keiichi NII, Tetsuo NISHIDA
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Publication number: 20240052299Abstract: Provided are a cell culture member having excellent cell culture performance and its long-term stability, and a method for modifying the surface thereof. The cell culture member according to the present invention is a cell culture member having at least a holding region that holds an adherent cell and contains a polymer compound, wherein at least a part of the holding region is a surface-modified region in which a fluorine atom is directly chemically bonded to a part of carbon atoms and/or silicon atoms constituting the polymer compound, and the present invention can provide a cell culture member that improves adhesiveness of the adherent cell to the surface-modified region, suppresses deterioration over time of adhesiveness, and is excellent in cell culture performance and its long-term stability.Type: ApplicationFiled: December 23, 2021Publication date: February 15, 2024Inventors: Naoto SAITO, Takeshi UEMURA, Kazutoshi HISANO, Yoshinori SATO, Masashi YAMAMOTO, Keiichi NII, Tetsuo NISHIDA
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Publication number: 20230407178Abstract: A micromachining processing agent and a micromachining processing method capable of selectively micromachining a silicon oxide film when a laminated film including at least a silicon nitride film, a silicon oxide film, and a silicon alloy film is micromachined. The micromachining processing agent is used for micromachining of a laminated film including at least a silicon oxide film, a silicon nitride film, and a silicon alloy film. The micromachining processing agent contains: (a) 0.01 to 50 mass % of hydrogen fluoride; (b) 0.1 to 40 mass % of ammonium fluoride; (c) 0.001 to 10 mass % of a water-soluble polymer; (d) 0.001 to 1 mass % of an organic compound having a carboxyl group; and (e) water as an optional component, in which the water-soluble polymer is at least one selected from a group consisting of acrylic acid, ammonium acrylate, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.Type: ApplicationFiled: October 27, 2021Publication date: December 21, 2023Inventors: Kazuya DATE, Nodoka NAKATA, Rui HASEBE, Keiichi NII
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Patent number: 8974685Abstract: Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.Type: GrantFiled: May 21, 2009Date of Patent: March 10, 2015Assignee: Stella Chemifa CorporationInventors: Masayuki Miyashita, Takanobu Kujime, Keiichi Nii
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Publication number: 20120237684Abstract: A plastic member, for example, a hydrocarbon-based transparent polymer molded product is subjected to fluorination processing in a fluorine gas within a reaction device 8 to fluorinate only a surface layer thereof. Thus, a refractive index can be lowered, a surface reflection can be lowered, and light transmittance of a base material can be improved.Type: ApplicationFiled: May 7, 2012Publication date: September 20, 2012Inventors: Tadahiro OHMI, Naoki Tanahashi, Keiichi Nii
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Publication number: 20120208375Abstract: In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.Type: ApplicationFiled: April 23, 2012Publication date: August 16, 2012Inventors: Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, Hiroshi Akahori, Keiichi Nii
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Patent number: 8183670Abstract: In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.Type: GrantFiled: January 9, 2007Date of Patent: May 22, 2012Assignee: Foundation for Advancement of International ScienceInventors: Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, Hiroshi Akahori, Keiichi Nii
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Publication number: 20120065116Abstract: Disclosed is a cleaning liquid which is capable of cleaning an object to be cleaned, to the surface of which cerium oxide adheres, by dissolving and removing cerium oxide in the form of cerium ions. A cleaning method using the cleaning liquid is also disclosed. The cleaning liquid for removing cerium oxide is characterized by containing hydrogen fluoride, at least one acid selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, acetic acid, phosphoric acid, iodic acid and hydrobromic acid, and water. The cleaning liquid is also characterized by dissolving and removing cerium oxide in the form of cerium ions.Type: ApplicationFiled: May 21, 2009Publication date: March 15, 2012Applicant: STELLA CHEMIFA CORPORATIONInventors: Masayuki Miyashita, Takanobu Kujime, Keiichi Nii, Masashi Yamamoto
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Publication number: 20120056126Abstract: Provided is a fine-processing agent which, when fine-processing a laminated film stacked at least with a silicon dioxide film and a silicon nitride film, can selectively fine-process the silicon dioxide film. Also provided is a fine-processing method utilizing the fine-processing agent. The fine-processing agent is characterized by including: (a) 0.01-15.0 weight % hydrogen fluoride and/or 0.1-40.0 weight % ammonium fluoride, (b) water, and (c) 0.001-10.00 weight % water-soluble polymer selected from among a group consisting of acrylic acid, ammonium acrylate, acrylic acid ester, acrylamide, styrenesulfonic acid, ammonium styrenesulfonate, and styrenesulfonic acid ester.Type: ApplicationFiled: May 21, 2009Publication date: March 8, 2012Applicant: STELLA CHEMIFA CORPORATIONInventors: Masayuki Miyashita, Takanobu Kujime, Keiichi Nii
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Patent number: 7928518Abstract: In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.Type: GrantFiled: September 28, 2009Date of Patent: April 19, 2011Assignees: Yazaki CorporationInventors: Tadahiro Ohmi, Akinobu Teramoto, Hiroshi Akahori, Keiichi Nii, Takanori Watanabe
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Publication number: 20100221495Abstract: A plastic member, for example, a hydrocarbon-based transparent polymer molded product is subjected to fluorination processing in a fluorine gas within a reaction device 8 to fluorinate only a surface layer thereof. Thus, a refractive index can be lowered, a surface reflection can be lowered, and light transmittance of a base material can be improved.Type: ApplicationFiled: September 12, 2005Publication date: September 2, 2010Inventors: Tadahiro Ohmi, Naoki Tanahashi, Keiichi Nii
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Patent number: 7727415Abstract: A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.Type: GrantFiled: December 19, 2005Date of Patent: June 1, 2010Assignee: Stella Chemifa CorporationInventors: Hirohisa Kikuyama, Masahide Waki, Kanenori Ito, Takanobu Kujime, Keiichi Nii, Rui Hasebe, Hitoshi Tsurumaru, Hideki Nakashima
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Publication number: 20100072519Abstract: In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.Type: ApplicationFiled: September 28, 2009Publication date: March 25, 2010Applicants: Yazaki Corporation, Tadahiro OhmiInventors: Tadahiro Ohmi, Akinobu Teramoto, Hiroshi Akahori, Keiichi Nii, Takanori Watanabe
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Patent number: 7663195Abstract: In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.Type: GrantFiled: November 22, 2005Date of Patent: February 16, 2010Assignees: Yazaki CorporationInventors: Tadahiro Ohmi, Akinobu Teramoto, Hiroshi Akahori, Keiichi Nii, Takanori Watanabe
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Publication number: 20080029487Abstract: A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.Type: ApplicationFiled: December 19, 2005Publication date: February 7, 2008Inventors: Hirohisa Kikuyama, Masahide Waki, Kanenori Ito, Takanobu Kujime, Keiichi Nii, Rui Hasebe, Hitoshi Tsurumaru, Hideki Nakashima
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Publication number: 20070227567Abstract: Disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface and enables to form a clean and flat semiconductor surface. Also disclosed are a processing method and an apparatus for manufacturing a semiconductor. Specifically disclosed is a process liquid-which causes only little dissolution of atoms from a semiconductor surface by using an aqueous solution containing at least one alcohol or ketone, thereby realizing a clean and flat surface.Type: ApplicationFiled: July 11, 2005Publication date: October 4, 2007Applicants: TOHOKU UNIVERSITY, STELLA CHEMIFA CORPORATIONInventors: Tadahiro Ohmi, Akinobu Teramoto, Hirohisa Kikuyama, Keiichi Nii, Masashi Yamamoto
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Publication number: 20070209200Abstract: A circuit board manufacturing method includes formation of a thermosetting photosensitive resin film on an insulating board by a spin coat method and the like, exposure of the photosensitive resin film to radiation rays such as ultraviolet rays, development with a developer or by etching, heat-hardening of the photosensitive resin film, oxygen plasma treatment or ultraviolet treatment if required, adjustment of a water quantity in the photosensitive resin film by drying the resin film, exposure in a fluorine gas atmosphere, anneal treatment, and then immersion of the resin film in a fluorinated acid chemical.Type: ApplicationFiled: March 30, 2005Publication date: September 13, 2007Applicants: Tadahiro OHMI, Zeon CorporationInventors: Tadahiro Ohmi, Keiichi Nii, Teruhiko Suzuki, Takeyoshi Kato
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Publication number: 20070145535Abstract: In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.Type: ApplicationFiled: January 9, 2007Publication date: June 28, 2007Inventors: Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, Hiroshi Akahori, Keiichi Nii
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Patent number: 7179746Abstract: In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.Type: GrantFiled: December 2, 2003Date of Patent: February 20, 2007Assignee: Foundation fõr Advancement of Internati{dot over (o)}nal ScienceInventors: Tadahiro Ohmi, Shigetoshi Sugawa, Akinobu Teramoto, Hiroshi Akahori, Keiichi Nii
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Publication number: 20060138538Abstract: In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.Type: ApplicationFiled: November 22, 2005Publication date: June 29, 2006Inventors: Tadahiro Ohmi, Akinobu Teramoto, Hiroshi Akahori, Keiichi Nii, Takanori Watanabe