Patents by Inventor Keiichi Tanaka

Keiichi Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220036674
    Abstract: A control system includes a communication unit capable of communicating with a mobile terminal and a device disposed inside a predetermined area, a setting unit that sets, to an enabled state or a disabled state, a first notification function of notifying the mobile terminal of a state of the device using the communication unit, and a control unit that performs a predetermined control using the communication unit when the first notification function is set to the disabled state and the mobile terminal is determined to have moved from the inside of the predetermined area to the outside of the predetermined area.
    Type: Application
    Filed: September 18, 2019
    Publication date: February 3, 2022
    Inventors: Kumi HARADA, Makoto HIROKI, Keiichi TANAKA
  • Publication number: 20220028660
    Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.
    Type: Application
    Filed: October 11, 2021
    Publication date: January 27, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela A. Balseanu, Keiichi Tanaka, Li-Qun Xia
  • Publication number: 20210366791
    Abstract: There is provided a sample processing method including: an adsorption step forming a reactant layer on a sample surface inside a processing chamber in a state where plasma is generated by a plasma generation unit in a plasma generation chamber connected to the processing chamber; a desorption step of desorbing the reactant layer from the surface of the sample by heating the sample with a heating lamp disposed outside the processing chamber and a heater disposed inside the sample stage; a cooling step of cooling the sample heated in the desorption step; and repeating the above steps a plurality of times, wherein in the adsorption step, a control unit performs feed-forward control over the heating lamp and the heater to set the sample to a first temperature state, and in the desorption step, the heater is subjected to feed-back control to set the sample to a second temperature state.
    Type: Application
    Filed: November 27, 2018
    Publication date: November 25, 2021
    Inventor: Keiichi TANAKA
  • Patent number: 11164753
    Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.
    Type: Grant
    Filed: January 13, 2015
    Date of Patent: November 2, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Keiichi Tanaka, Steven D. Marcus
  • Patent number: 11158489
    Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: October 26, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela Balseanu, Keiichi Tanaka, Li-Qun Xia
  • Publication number: 20210280394
    Abstract: A substrate processing apparatus of the present disclosure includes a processing container capable of being vacuum-exhausted, a lower electrode, and an upper electrode. A target substrate can be placed on the lower electrode. The upper electrode is disposed in the processing container so as to face the lower electrode. A substrate processing method of the present disclosure includes performing a first process on the target substrate using an AC voltage without using a DC pulse voltage, and performing a second process on the target substrate using the DC pulse voltage.
    Type: Application
    Filed: June 13, 2019
    Publication date: September 9, 2021
    Inventors: Keiichi TANAKA, Tatsuo MATSUDO
  • Patent number: 11081318
    Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: August 3, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenichi Ohno, Keiichi Tanaka, Li-Qun Xia, Tsutomu Tanaka, Dmitry A. Dzilno, Mario D. Silvetti, John C. Forster, Rakesh Ramadas, Mike Murtagh, Alexander V. Garachtchenko
  • Publication number: 20210233020
    Abstract: A pickup request system includes: a determination unit configured to determine presence or absence of a package in a delivery box provided on a site of a building and whether or not a user is present in a first predetermined range including the building; and a control unit configured to request pickup of the package when it is determined that the user has moved from within the first predetermined range to out of the first predetermined range while the package is present in the delivery box.
    Type: Application
    Filed: April 25, 2019
    Publication date: July 29, 2021
    Inventors: Kumi HARADA, Keiichi TANAKA, Makoto HIROKI, Keiji SAKAGUCHI, Norikazu TAGAKI
  • Patent number: 11028477
    Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Mark Saly, Keiichi Tanaka, Eswaranand Venkatasubramanian, Mandyam Sriram, Bhaskar Jyoti Bhuyan, Pramit Manna, David Thompson, Andrew Short
  • Publication number: 20210118441
    Abstract: A voice control information output system includes: a voice control information obtainment unit that obtains voice control information for controlling a device based on a voice received by a voice input terminal, from a voice control system that outputs the voice control information; and an output unit that outputs display-related information for displaying a content related to the voice control information.
    Type: Application
    Filed: January 15, 2019
    Publication date: April 22, 2021
    Inventors: Keiichi TANAKA, Kiyonori KIDO
  • Publication number: 20210063882
    Abstract: There is provided a substrate processing apparatus including: a holder configured to hold a substrate having a pattern formed with a resist material for ArF immersion lithography on a surface of the substrate inside a processing container; a rotation driver configured to rotate the holder; and a light source part having a plurality of light sources configured to irradiate the surface of the substrate held by the holder which is rotated by the rotation driver wherein the light sources include irradiating vacuum ultraviolet light, wherein an amount of irradiation of an inner side of the substrate with light from the light source part is made larger than an amount of irradiation of an outer side of the substrate with light from the light source part.
    Type: Application
    Filed: September 1, 2020
    Publication date: March 4, 2021
    Inventor: Keiichi TANAKA
  • Publication number: 20210063883
    Abstract: A substrate processing apparatus includes a holder configured to hold, within a processing container, a substrate having a pattern formed of a resist material for EUV lithography on a surface thereof, a rotation driving part configured to rotate the holder, and a light source part including a plurality of light sources configured to emit light to the surface of the substrate held by the holder rotated by the rotation driving part such that a number of rotations of the substrate is 0.5 rpm to 3 rpm.
    Type: Application
    Filed: September 1, 2020
    Publication date: March 4, 2021
    Inventor: Keiichi TANAKA
  • Publication number: 20210035578
    Abstract: A control system includes: a first communication unit configured to obtain speech control information from a speech control system that outputs the speech control information for controlling a device based on a speech obtained by a speech input terminal; and a second communication unit configured to obtain related information relevant to the speech input terminal from the speech control system.
    Type: Application
    Filed: January 24, 2019
    Publication date: February 4, 2021
    Inventors: Kiyonori KIDO, Keiichi TANAKA
  • Publication number: 20210035577
    Abstract: A control system includes: a first communication unit configured to communicate with a speech control system that outputs speech control information for controlling a device based on a speech obtained by a speech input terminal; a second communication unit configured to obtain human information about presence or absence of a person within a predetermined area from which the speech input terminal obtains the speech; and an output unit configured to output, based on the human information obtained, control information for controlling a target device to be controlled.
    Type: Application
    Filed: January 24, 2019
    Publication date: February 4, 2021
    Inventors: Kiyonori KIDO, Keiichi TANAKA
  • Patent number: 10908104
    Abstract: A radiation analysis apparatus includes an excitation source unit irradiating an object, for which the radiation analysis apparatus analyzes property or a structure, with a first radiation, a radiation detection unit including three or more radiation detectors that detect a second radiation generated from the object irradiated with the first radiation, a radiation focusing unit disposed between the object and the radiation detection unit, and focusing the second radiation, a position changing unit changing a relative positional relationship between the radiation focusing unit and the radiation detection unit, and a control unit controlling the position changing unit to change the positional relationship, based on first information which is stored in a storage unit and indicates an intensity distribution of the second radiation emitted from the radiation focusing unit and second information indicating a distribution based on a detection count of the second radiation detected by each of the radiation detectors.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: February 2, 2021
    Assignee: Hitachi High-Tech Science Corporation
    Inventors: Satoshi Nakayama, Keiichi Tanaka, Atsushi Nagata, Kazuo Chinone
  • Patent number: 10896858
    Abstract: Disclosed is a processing method for performing a processing corresponding to a processing gas in a plurality of processing containers which are connected to a gas supply source, and at least some of which have different lengths of pipes to the gas supply source. The processing method includes simultaneously supplying the processing gas from the gas supply source to the plurality of processing containers, and individually supplying the processing gas from the gas supply source to the plurality of processing containers or to some of the plurality of processing containers.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: January 19, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Keiichi Tanaka
  • Patent number: 10854428
    Abstract: Apparatus and methods of processing a substrate in a plasma enhanced spatial atomic layer deposition chamber. A substrate is moved through one or more plasma processing regions and one or more non-plasma processing regions while the plasma power is pulsed to prevent a voltage differential on the substrate from exceeding a breakdown voltage of the substrate or device being formed on the substrate.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: December 1, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Tsutomu Tanaka, Dmitry A. Dzilno, Alexander V. Garachtchenko, Keiichi Tanaka
  • Patent number: 10801977
    Abstract: A radiation analyzing apparatus includes a radiation irradiation unit configured to irradiate an object with a first radiation, a radiation detection unit configured to detect a second radiation generated from the object irradiated with the first radiation, a radiation converging unit configured to disposed between the object and the radiation detection unit and to converge the second radiation on the radiation detection unit, a position changing unit configured to vary a relative positional relationship between the radiation converging unit and the radiation detection unit, and a driving unit configured to change the positional relationship.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: October 13, 2020
    Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Atsushi Nagata, Satoshi Nakayama, Keiichi Tanaka, Kazuo Chinone
  • Patent number: 10606177
    Abstract: There is provided a substrate processing apparatus, including: a mounting table configured to mount a substrate with a pattern mask formed on the substrate inside a process container; a depressurization mechanism configured to perform a pressure-decreasing process of depressurizing an interior of the process container to have a pressure of 1 Pa or lower; a light irradiation mechanism configured to irradiate the substrate with a vacuum ultraviolet light after the interior of the process container is depressurized so that an internal pressure of the process container reaches a pressure of 1 Pa or lower; and a controller configured to output a control signal such that an average depressurization rate inside the process container performed by the depressurization mechanism becomes 250 Pa/sec or lower while the interior of the process container is depressurized from 10,000 Pa to 1 Pa.
    Type: Grant
    Filed: July 9, 2018
    Date of Patent: March 31, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tomohiro Iseki, Keiichi Tanaka
  • Publication number: 20190287825
    Abstract: According to one embodiment, a plasma processing apparatus includes: a vacuum container; a sample stage on which a sample is mounted in an interior of the vacuum container; an exhaust unit which exhausts the interior of the vacuum container; a gas supply unit which supplies a processing gas to the interior of the vacuum container; a high frequency power application unit which applies a high frequency power to the interior of the vacuum container; an irradiation unit which irradiates the sample mounted on the sample stage with infrared light from an outside of the vacuum container; and a control unit which controls the exhaust unit, the gas supply unit, the high frequency power application unit, the irradiation unit, and a temperature measurement unit which measures a temperature of a surface of the sample stage on which the sample is mounted.
    Type: Application
    Filed: March 14, 2019
    Publication date: September 19, 2019
    Inventor: Keiichi TANAKA