Abstract: A wave height analyzer generates pre-sensitivity correction data using a radiation pulse signal transmitted from a room temperature amplifier, a heater value acquired from a temperature control section, a base line of a current flowing to a TES acquired from a base line monitor mechanism. The wave height analyzer outputs the pre-sensitivity correction data to a sensitivity correction arithmetic operation unit and receives post-sensitivity correction data, on which sensitivity correction is performed. The wave height analyzer generates composite data of a combination of the pre-sensitivity correction data and the post-sensitivity correction data. A spectrum display section receives pieces of composite data sequentially created by the wave height analyzer and displays at least one of a spectrum before sensitivity correction and a spectrum after sensitivity correction, in response to receiving an operator's request.

Abstract: A method for inhibiting macrophage migration and a method for treating neuropathic pain, by administering a benzopyran derivative of the following formula, or a salt thereof, where R? represents an optionally substituted C1-6 alkyl group, one of R2 and R3 represents a hydrogen atom, and the other of R2 and R3 represents a hydrogen atom, an optionally substituted amino group, an optionally substituted acylamino group, an optionally substituted carbamoyl group or an optionally substituted aryl group.

Abstract: The present invention provides a method for forming a through-via, including the steps of (1) forming an alloy film as a diffusion-preventive layer that prevents diffusion of copper, in an area on a side wall of a hole formed in a substrate that extends from an entrance of the hole to a central part of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution containing at least cobalt ion or nickel ion, a complexing agent, a reductant, and a pH adjusting agent; (2) forming an alloy film as a diffusion-preventive layer in an area on the side wall of the hole formed in the substrate that extends from the central part of the hole to a bottom of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution containing at least the cobalt ion or the nickel ion, the complexing agent, the reductant, the pH adjusting agent, and an amino group-containing polymer; and (3) stacking a copper seed layer on the diffusion-preventive layer form

Abstract: A superconductive transition edge sensor detects radiation. A wave height analyzer generates an energy spectrum of radiation using a detection signal which is output from the superconductive transition edge sensor. A temperature control section and a base line monitor mechanism acquire a physical quantity of data having correlation with detection sensitivity of the superconductive transition edge sensor. A sensitivity correction arithmetic operation unit associates the physical quantity of a plurality of pieces of the acquired data at a plurality of different timings over a predetermined period of time with the detection signal at a certain timing and corrects the detection signal at the certain timing in accordance with the detection sensitivity of the superconductive transition edge sensor by using information regarding the correlation between the physical quantity of the plurality of pieces of data and the detection sensitivity of the superconductive transition edge sensor.

Abstract: If an execution target application is an application with a high load for a client terminal, a mode switching unit switches an execution system from a simplex processing mode to a distributed processing mode. On the other hand, upon receiving a switching notification for switching the execution system to the simplex processing mode from a server, the mode switching unit causes a distributed display processing unit to stop display processing for the application and sets the execution system of the application to the simplex processing mode.

Abstract: A vacuum processing apparatus is configured to include a process chamber, a turntable provided in the process chamber, and a substrate receiving area provided in one surface of the turntable and including a regulation part formed therearound to regulate a position of a substrate. A transfer mechanism is provided outside the process chamber, and a lifting member is configured to support the substrate and to move up and down in order to transfer the substrate between the transfer mechanism and the turntable. An exhaust mechanism is configured to selectively evacuate a gap between the substrate receiving area and the substrate before the lifting member places the substrate on the substrate receiving area.

Abstract: A device information acquisition unit acquires device information from a peripheral device via an ad hoc network. An integrated service determination unit determines an integrated service to be executed from among the integrated services defined by integrated service information based on an instruction from a user. A distribution script determination unit cross checks device information related to a client device and a specification requirement of the integrated service to be executed, and determines a client UI of the client device. A script distribution unit distributes, to each client device, the client UI that has been determined by the distribution script determination unit.

Abstract: A substrate cleaning method is capable of preventing a liquid stream on a substrate from being cut and circuit patterns thereon from being damaged. The substrate cleaning method includes a liquid film forming process that forms a liquid film on an entire substrate surface by supplying a cleaning liquid L from a central portion of the substrate W toward a peripheral portion thereof while rotating the substrate; a drying region forming process that discharges a gas G on the substrate surface and removes the cleaning liquid on the substrate surface; and a residual liquid removing process that removes the cleaning liquid remaining between the circuit patterns by discharging a gas G while moving in a diametrical direction of the substrate.

Abstract: A radiation analyzer includes a transition edge sensor for detecting radiation and a cold head that cools the transition edge sensor. A current detecting mechanism detects a current flowing in the transition edge sensor, and a peak analyzing unit measures a peak value based on the current detected by the current detecting mechanism. A first heater is configured to heat the cold head to keep a temperature of the transition edge sensor constant. A sensitivity correction operating unit is configured to correct a sensitivity of the transition edge sensor based on a relation obtained in advance between an output of the first heater and the peak value measured by the peak analyzing unit.

Abstract: A benzopyran derivative represented by general formula [1], or a salt thereof, is useful in therapeutic or preventive treatment of disease, wherein said therapeutic or preventive treatment is effective because said benzopyran derivative, or salt thereof, binds to MIF, has an MIF inhibitory effect, and inhibits MIF. [In the formula, R1 represents an optionally substituted C1-6 alkyl group, one of R2 and R3 represents a hydrogen atom, and the other of R2 and R3 represents a hydrogen atom, an optionally substituted amino group, an optionally substituted acylamino group, an optionally substituted carbamoyl group, or an optionally substituted aryl group.

Abstract: A disclosed method of depositing a silicon film on a substrate mounted on a turntable and can pass by rotation through a first process area and a second process area, which are separately arranged along a peripheral direction in a cylindrical chamber set to have a first temperature capable of cutting a Si—H bond includes a molecular layer deposition step of supplying a Si2H6 gas set to have a second temperature less than the first temperature when the substrate passes through the first process area thereby forming a SiH3 molecular layer on a surface of the substrate, and a hydrogen desorption step of causing the substrate, on a surface of which the SiH3 molecular layer is formed, to pass through the second process area maintained to have the first temperature thereby cutting the Si—H bond and leaving only a silicon atomic layer on the surface of the substrate.

Abstract: Provided is a method for configuring wireless connection settings, a wireless communications apparatus, and a display method, the method being executed by the wireless communications apparatus and including: (a) receiving a first radio signal which includes second configuration information; (b) receiving authentication information for use in authenticating a first device from a second device, the authentication information being uniquely associated with the first device; (c) retaining the authentication information; (d) establishing the wireless connection with the first device, using the second configuration information; (e) transmitting a second radio signal which includes the authentication information, to the first device through the wireless connection established; (f) receiving a third radio signal which includes response information to the authentication information; and (g) transmitting the first configuration information to the first device if the response information indicates that the first device

Abstract: Embodiments disclosed herein generally relate to forming dielectric materials in high aspect ratio features. In one embodiment, a method for filling high aspect ratio trenches in one processing chamber is disclosed. The method includes placing a substrate inside a processing chamber, where the substrate has a surface having a plurality of high aspect ratio trenches and the surface is facing a gas/plasma distribution assembly. The method further includes performing a sequence of depositing a layer of dielectric material on the surface of the substrate and inside each of the plurality of trenches, where the layer of dielectric material is on a bottom and side walls of each trench, and removing a portion of the layer of dielectric material disposed on the surface of the substrate, where an opening of each trench is widened. The sequence repeats until the trenches are filled seamlessly with the dielectric material.

Abstract: The present invention provides a method for forming a through-via, including the steps of (1) forming an alloy film as a diffusion-preventive layer that prevents diffusion of copper, in an area on a side wall of a hole formed in a substrate that extends from an entrance of the hole to a central part of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution containing at least cobalt ion or nickel ion, a complexing agent, a reductant, and a pH adjusting agent; (2) forming an alloy film as a diffusion-preventive layer in an area on the side wall of the hole formed in the substrate that extends from the central part of the hole to a bottom of the hole, by use of an electroless cobalt plating solution or an electroless nickel plating solution containing at least the cobalt ion or the nickel ion, the complexing agent, the reductant, the pH adjusting agent, and an amino group-containing polymer; and (3) stacking a copper seed layer on the diffusion-preventive layer form

Abstract: A vacuum processing apparatus is configured to include a process chamber, a turntable provided in the process chamber, and a substrate receiving area provided in one surface of the turntable and including a regulation part formed therearound to regulate a position of a substrate. A transfer mechanism is provided outside the process chamber, and a lifting member is configured to support the substrate and to move up and down in order to transfer the substrate between the transfer mechanism and the turntable. An exhaust mechanism is configured to selectively evacuate a gap between the substrate receiving area and the substrate before the lifting member places the substrate on the substrate receiving area.

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

Abstract: An X-ray fluorescence analysis apparatus is provided with: an excitation source configured to excite an analysis target sample to emit a characteristic X-ray; an X-ray detector configured to detect the characteristic X-ray emitted from the analysis target sample; and an electromagnetic wave shield and a heat shield that are sequentially arranged from the analysis target sample toward the X-ray detector. The electromagnetic wave shield is provided with a through hole portion on which a through hole through which the characteristic X-ray passes is formed, the through hole having a size equal to or smaller than 50 ?m. The heat shield is provided with a window portion through which the characteristic X-ray is passed through.

Abstract: An image rendering device realizes stereoscopic viewing of composite images generated by compositing background three-dimensional models and foreground three-dimensional models each defined in three-dimensional modeling space. A texture mapping unit converts background image data into two or more viewpoint textures and maps each viewpoint texture to a background three-dimensional model in the three-dimensional modeling space. A viewport conversion unit extracts, for each of the two or more viewpoint textures, a viewport image from the background three-dimensional model mapped with the viewpoint texture and from the foreground three-dimensional model.

Abstract: The present invention provides a liquid crystal display panel which can prevent an electric short circuit (leakage) between a pair of substrates with no additional production step in the case where a multilayer spacer is used. The present invention is a liquid crystal display panel comprising: a pair of substrates; and a liquid crystal layer between the substrates, wherein a first substrate of the substrates has a support substrate, a plurality of pixel electrodes, transparent colored layers of plural colors overlapping with the pixel electrodes, and a multilayer spacer formed of a stacked body of three or more resin layers including transparent colored layers of plural colors, and a second substrate of the substrates has a supporting substrate and a common electrode.

Abstract: In the present invention, a method using a combination of iguratimod or a salt thereof and one or more immunosuppressants is useful as a method for the treatment of autoimmune diseases, and with this method adverse effects are lessened. A pharmaceutical composition containing this combination is useful for the treatment of autoimmune diseases. This method and pharmaceutical composition are useful for the treatment of more severe autoimmune diseases.