Patents by Inventor Keisuke Fukada

Keisuke Fukada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11107892
    Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: August 31, 2021
    Assignees: SHOWA DENKO K.K., Central Research Institute Of Electric Power Industry, DENSO CORPORATION
    Inventors: Keisuke Fukada, Naoto Ishibashi, Akira Bando, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Kazukuni Hara, Masami Naito, Hideyuki Uehigashi, Hiroaki Fujibayashi, Hirofumi Aoki, Toshikazu Sugiura, Katsumi Suzuki
  • Publication number: 20210217648
    Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.
    Type: Application
    Filed: March 24, 2021
    Publication date: July 15, 2021
    Applicant: SHOWA DENKO K.K.
    Inventors: Jia Yu, Naoto Ishibashi, Keisuke Fukada, Yoshikazu Umeta, Hironori Atsumi
  • Publication number: 20210066113
    Abstract: A susceptor (1) of the present invention is a susceptor that is configured to hold a wafer in a CVD apparatus that forms a layer on a wafer through chemical vapor deposition, and includes an external susceptor (2) and an internal susceptor (1). The external susceptor (2) has an opening (2c) that accommodates the internal susceptor (1) in a coupling manner and has a wafer placement surface (2a) on which an outer peripheral portion (Ws) of a wafer is placed. The internal susceptor (1) includes a projection portion (1a) on a surface (1b) facing the wafer (W), and a height (h) of the projection portion (1a) is a height at which the projection portion does not come into contact with the wafer (W) when the wafer (W) is placed on the susceptor.
    Type: Application
    Filed: June 22, 2018
    Publication date: March 4, 2021
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshikazu UMETA, Keisuke FUKADA, Naoto ISHIBASHI, Hironori ATSUMI
  • Patent number: 10896831
    Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: January 19, 2021
    Assignees: NuFlare Technology, Inc., Showa Denko K.K., Central Research Institute of Electric Power Industry
    Inventors: Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hiroaki Fujibayashi, Hideyuki Uehigashi, Masami Naito, Kazukuni Hara, Hirofumi Aoki, Takahiro Kozawa
  • Patent number: 10801128
    Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: October 13, 2020
    Assignee: SHOWA DENKO K.K.
    Inventors: Yasunori Motoyama, Yoshishige Okuno, Yoshikazu Umeta, Keisuke Fukada
  • Publication number: 20200251561
    Abstract: A SiC epitaxial wafer includes a SiC epitaxial layer formed on a SiC single crystal substrate, in which a total density of large-pit defects caused by micropipes in the substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, is 1 defect/cm2 or less.
    Type: Application
    Filed: February 4, 2020
    Publication date: August 6, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshitaka NISHIHARA, Keisuke FUKADA
  • Publication number: 20200181798
    Abstract: A susceptor, including: a base portion having a first surface on which a wafer is placed, in which the base portion has a plurality of openings which penetrate through the base portion in a thickness direction and supply an Ar gas to a back surface of the wafer.
    Type: Application
    Filed: December 6, 2019
    Publication date: June 11, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yuichiro MABUCHI, Keisuke FUKADA
  • Publication number: 20200118849
    Abstract: According to an aspect of the present invention, there is provided a deposition apparatus including: a reaction space which is a reaction chamber; a front chamber for deposition; a raw material supply port that is configured to supply a raw material to the reaction space; an opening for measuring a temperature of a wafer mounted on a wafer mounting surface of a mounting stage disposed in the reaction space; and a partition plate that partitions the reaction space and the front chamber for deposition, in which the raw material supply port is positioned on the same plane as the partition plate or on the reaction space side from the partition plate, and the opening is positioned in the front chamber for deposition side from the partition plate.
    Type: Application
    Filed: May 9, 2018
    Publication date: April 16, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Keisuke FUKADA, Naoto ISHIBASHI, Hironori ATSUMI
  • Publication number: 20200083085
    Abstract: A susceptor which is used in a chemical vapor deposition apparatus for growing an epitaxial layer on a principal plane of a wafer by a chemical vapor deposition method, and which includes a base; and three protrusion parts that are disposed on an outer circumferential part of the base and support an outer circumferential part of the wafer, is provided.
    Type: Application
    Filed: September 4, 2019
    Publication date: March 12, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Jia YU, Naoto ISHIBASHI, Keisuke FUKADA, Yoshikazu UMETA, Hironori ATSUMI
  • Publication number: 20200083330
    Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.
    Type: Application
    Filed: April 19, 2018
    Publication date: March 12, 2020
    Applicants: SHOWA DENKO K.K., Central Research Institute of Electric Power Industry, DENSO CORPORATION
    Inventors: Keisuke FUKADA, Naoto ISHIBASHI, Akira BANDO, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Kazukuni HARA, Masami NAITO, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Hirofumi AOKI, Toshikazu SUGIURA, Katsumi SUZUKI
  • Publication number: 20190376206
    Abstract: This SiC epitaxial wafer includes: a SiC single crystal substrate of which a main surface has an off-angle of 0.4° to 5° with respect to (0001) plane; and an epitaxial layer provided on the SiC single crystal substrate, wherein the epitaxial layer has a basal plane dislocation density of 0.1 pieces/cm2 or less that is a density of basal plane dislocations extending from the SiC single crystal substrate to an outer surface and an intrinsic 3C triangular defect density of 0.1 pieces/cm2 or less.
    Type: Application
    Filed: December 25, 2017
    Publication date: December 12, 2019
    Applicants: SHOWA DENKO K.K, Central Research Institute of Electric Power Industry, DENSO CORPORATION
    Inventors: Keisuke FUKADA, Naoto ISHIBASHI, Akira BANDO, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Kazukuni HARA, Masami NAITO, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Hirofumi AOKI, Toshikazu SUGIURA, Katsumi SUZUKI
  • Publication number: 20190316273
    Abstract: A method of producing a p-type SiC epitaxial wafer, the method including: a step of setting an input raw material C/Si ratio, being a ratio between the C element and the Si element in a feedstock gas; and a step of obtaining a p-type SiC epitaxial wafer having an Al dopant concentration of at least 1×1018 cm?3 by forming a p-type SiC epitaxial film on a substrate in a film-forming atmosphere comprising the feedstock gas, a Cl-based gas containing Cl in the molecule, and a dopant gas containing Al and C in the molecule, wherein the input raw material C/Si ratio is set based on a total gas C/Si ratio, being a ratio between the C element and the Si element in the film-forming atmosphere containing the C element included in the dopant gas, the input raw material C/Si ratio differs from the total gas C/Si ratio, and the input raw material C/Si ratio is 0.8 or less.
    Type: Application
    Filed: December 11, 2017
    Publication date: October 17, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Naoto ISHIBASHI, Keisuke FUKADA, Akira BANDOH
  • Publication number: 20190169742
    Abstract: This gas piping system is a run-vent mode gas piping system in which, the gas piping system including a plurality of supply lines through which plural gases are fed individually, an exhaust line that leads from a reactor to an exhaust pump, a run line having one or plural pipes which respectively branch from the plural supply lines, plural vent lines which respectively branch from the supply lines and are connected to the exhaust line, and plural valves which are respectively provided at the branch points of the plural supply lines, and switches between feeding a gas to the run line side and feeding a gas to the vent line side, wherein the plural vent lines are separated from each other until the vent lines reach the exhaust line, and the inner diameter of the exhaust line is greater than the inner diameter of the plural vent lines.
    Type: Application
    Filed: June 12, 2017
    Publication date: June 6, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Naoto ISHIBASHI, Keisuke FUKADA, Tomoya UTASHIRO, Akira BANDO
  • Publication number: 20190161885
    Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.
    Type: Application
    Filed: November 20, 2018
    Publication date: May 30, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Yasunori MOTOYAMA, Yoshishige OKUNO, Yoshikazu UMETA, Keisuke FUKADA
  • Publication number: 20190161886
    Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; and a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor, in which an unevenness is formed on a radiation-receiving surface of the susceptor, which faces a first surface of the heater provided at the susceptor side, and the unevenness is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view.
    Type: Application
    Filed: November 20, 2018
    Publication date: May 30, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Yasunori MOTOYAMA, Yoshishige OKUNO, Yoshikazu UMETA, Keisuke FUKADA
  • Publication number: 20190148496
    Abstract: An SiC epitaxial wafer according to the present invention includes: an SiC single crystal substrate; and a carrier concentration variation layer disposed on one face side of the SiC single crystal substrate, wherein the carrier concentration variation layer includes: high concentration layers in which carrier concentrations thereof are higher than carrier concentrations of adjacent layers; and low concentration layers in which carrier concentrations are lower than in adjacent layers, and the high concentration layers and the low concentration layers are laminated alternately.
    Type: Application
    Filed: October 5, 2018
    Publication date: May 16, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Naoto ISHIBASHI, Keisuke FUKADA
  • Publication number: 20190144995
    Abstract: A chemical vapor deposition apparatus is provided which comprises a reaction furnace in which vapor deposition is performed and an exhaust pipe which discharges a gas from an interior of the reaction furnace, wherein the exhaust pipe includes at least one of a bending part, and the bending part includes at least one of a pipe-extension part, and the pipe-extension part extends from the bending part and has a storage space in the pipe-extension part.
    Type: Application
    Filed: October 31, 2018
    Publication date: May 16, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Naoto ISHIBASHI, Keisuke FUKADA, Yoshikazu UMETA, Tomohiro KODAMA
  • Patent number: 10262863
    Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: April 16, 2019
    Assignees: SHOWA DENKO K.K., Central Research Institute Of Electric Power Industry
    Inventors: Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hideyuki Uehigashi, Hiroaki Fujibayashi, Masami Naito, Kazukuni Hara, Takahiro Kozawa, Hirofumi Aoki
  • Publication number: 20180371640
    Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.
    Type: Application
    Filed: December 12, 2016
    Publication date: December 27, 2018
    Applicant: SHOWA DENKO K.K.
    Inventors: Jia YU, Naoto ISHIBASHI, Keisuke FUKADA, Tomoya UTASHIRO, Hironori ATSUMI
  • Publication number: 20180374721
    Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
    Type: Application
    Filed: August 31, 2018
    Publication date: December 27, 2018
    Inventors: Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hiroaki Fujibayashi, Hideyuki Uehigashi, Masami Naito, Kazukuni Hara, Hirofumi Aoki, Takahiro Kozawa