Patents by Inventor Keisuke Fukada

Keisuke Fukada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10262863
    Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: April 16, 2019
    Assignees: SHOWA DENKO K.K., Central Research Institute Of Electric Power Industry
    Inventors: Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hideyuki Uehigashi, Hiroaki Fujibayashi, Masami Naito, Kazukuni Hara, Takahiro Kozawa, Hirofumi Aoki
  • Publication number: 20180374721
    Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
    Type: Application
    Filed: August 31, 2018
    Publication date: December 27, 2018
    Inventors: Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hiroaki Fujibayashi, Hideyuki Uehigashi, Masami Naito, Kazukuni Hara, Hirofumi Aoki, Takahiro Kozawa
  • Publication number: 20180371640
    Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.
    Type: Application
    Filed: December 12, 2016
    Publication date: December 27, 2018
    Applicant: SHOWA DENKO K.K.
    Inventors: Jia YU, Naoto ISHIBASHI, Keisuke FUKADA, Tomoya UTASHIRO, Hironori ATSUMI
  • Publication number: 20170345658
    Abstract: A method for manufacturing a SiC epitaxial wafer according to one aspect of the present invention includes separately introducing, into a reaction space for SiC epitaxial growth, a basic N-based gas composed of molecules containing an N atom within the molecular structure but having neither a double bond nor a triple bond between nitrogen atoms, and a Cl-based gas composed of molecules containing a Cl atom within the molecular structure, and mixing the N-based gas and the Cl-based gas at a temperature equal to or higher than the boiling point or sublimation temperature of a solid product generated by mixing the N-based gas and the Cl-based gas.
    Type: Application
    Filed: December 8, 2015
    Publication date: November 30, 2017
    Applicants: SHOWA DENKO K.K., Central Research Institute of Electric Power Industry
    Inventors: Keisuke FUKADA, Masahiko ITO, Isaho KAMATA, Hidekazu TSUCHIDA, Hideyuki UEHIGASHI, Hiroaki FUJIBAYASHI, Masami NAITO, Kazukuni HARA, Takahiro KOZAWA, Hirofumi AOKI
  • Patent number: 9184669
    Abstract: Provided is a technique of detecting not only a main DC voltage but also an auxiliary DC voltage to protect a main rectifier circuit and an auxiliary rectifier circuit. A main power supply circuit drives a load. A main rectifier circuit receives an AC voltage through a first switch to supply the main power supply circuit with a main DC voltage. The first switch is turned off when an overcurrent flows through the main power supply circuit or the load is an overload for the main power supply circuit. A control circuit is supplied with operating power from an auxiliary power supply circuit. An auxiliary rectifier circuit receives the AC voltage while bypassing the first switch to supply the auxiliary power supply circuit with an auxiliary DC voltage. A DC voltage detection circuit detects the main DC voltage and the auxiliary DC voltage.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: November 10, 2015
    Assignee: DAIKIN INDUSTRIES, LTD.
    Inventors: Yasuyuki Tsutsui, Mitsuru Imoto, Norio Sakae, Kouji Joutaki, Keisuke Fukada, Tetsuo Shouji
  • Publication number: 20150188445
    Abstract: Provided is a technique of detecting not only a main DC voltage but also an auxiliary DC voltage to protect a main rectifier circuit and an auxiliary rectifier circuit. A main power supply circuit drives a load. A main rectifier circuit receives an AC voltage through a first switch to supply the main power supply circuit with a main DC voltage. The first switch is turned off when an overcurrent flows through the main power supply circuit or the load is an overload for the main power supply circuit. A control circuit is supplied with operating power from an auxiliary power supply circuit. An auxiliary rectifier circuit receives the AC voltage while bypassing the first switch to supply the auxiliary power supply circuit with an auxiliary DC voltage. A DC voltage detection circuit detects the main DC voltage and the auxiliary DC voltage.
    Type: Application
    Filed: May 16, 2013
    Publication date: July 2, 2015
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Yasuyuki Tsutsui, Mitsuru Imoto, Norio Sakae, Kouji Joutaki, Keisuke Fukada, Tetsuo Shouji