Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800° C. or higher and fluoride of a second metal element having a second boiling point of 800° C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.

Abstract: A semiconductor device of an embodiment includes a control circuit arranged on a substrate, a first conductive layer arranged on the control circuit and containing a first element as a main component, a multilayer structure arranged on the first conductive layer and configured such that multiple second conductive layers and multiple insulating layers are alternately stacked on each other, a memory layer penetrating the multilayer structure and reaching the first conductive layer at a bottom portion, a first layer arranged between the control circuit and the first conductive layer and containing the first element as a main component, and a second layer arranged between the control circuit and the first layer and containing, as a main component, a second element different from the first element.

Abstract: A semiconductor device includes a substrate, a stacked body provided on the substrate, a first insulator dividing the stacked body in a second direction crossing the first direction, a second insulator adjacent to the first insulator and dividing the stacked body in the second direction, a first hole, and a first insulating member. In the stacked body, a plurality of layers are stacked in a first direction perpendicular to the upper surface of the substrate. The first hole penetrates the stacked body and the first insulator in the first direction. The first insulating member penetrates the stacked body and the second insulator in the first direction and is adjacent to the first hole via a first electrode in a third direction crossing the first direction and the second direction, and has an opening diameter larger than that of the first insulator.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800° C. or higher and fluoride of a second metal element having a second boiling point of 800° C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.

Abstract: A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.

Abstract: A semiconductor device of an embodiment includes a control circuit arranged on a substrate, a first conductive layer arranged on the control circuit and containing a first element as a main component, a multilayer structure arranged on the first conductive layer and configured such that multiple second conductive layers and multiple insulating layers are alternately stacked on each other, a memory layer penetrating the multilayer structure and reaching the first conductive layer at a bottom portion, a first layer arranged between the control circuit and the first conductive layer and containing the first element as a main component, and a second layer arranged between the control circuit and the first layer and containing, as a main component, a second element different from the first element.

Abstract: A semiconductor device includes a substrate, a stacked body provided on the substrate, a first insulator dividing the stacked body in a second direction crossing the first direction, a second insulator adjacent to the first insulator and dividing the stacked body in the second direction, a first hole, and a first insulating member. In the stacked body, a plurality of layers are stacked in a first direction perpendicular to the upper surface of the substrate. The first hole penetrates the stacked body and the first insulator in the first direction. The first insulating member penetrates the stacked body and the second insulator in the first direction and is adjacent to the first hole via a first electrode in a third direction crossing the first direction and the second direction, and has an opening diameter larger than that of the first insulator.

Abstract: A semiconductor device includes a substrate, a stacked body provided on the substrate, a first insulator dividing the stacked body in a second direction crossing the first direction, a second insulator adjacent to the first insulator and dividing the stacked body in the second direction, a first hole, and a first insulating member. In the stacked body, a plurality of layers are stacked in a first direction perpendicular to the upper surface of the substrate. The first hole penetrates the stacked body and the first insulator in the first direction. The first insulating member penetrates the stacked body and the second insulator in the first direction and is adjacent to the first hole via a first electrode in a third direction crossing the first direction and the second direction, and has an opening diameter larger than that of the first insulator.

Abstract: According to one embodiment, a method for producing a semiconductor device includes forming a first film on a substrate. A second film is formed on the first film. A recess is formed in the second film. First processing by which a third film is formed on the second film to form a side face of the recess with the second film and second processing by which the first film exposed in the recess is processed by using the second and third films, are executed one or more times. In relation to an N-th (N is an integer greater than or equal to 1) first processing, before the third film is formed on the second film, a surface inclined with respect to the side face of the recess is formed above the side face of the recess.

Abstract: A semiconductor device includes a substrate, a stacked body provided on the substrate, a first insulator dividing the stacked body in a second direction crossing the first direction, a second insulator adjacent to the first insulator and dividing the stacked body in the second direction, a first hole, and a first insulating member. In the stacked body, a plurality of layers are stacked in a first direction perpendicular to the upper surface of the substrate. The first hole penetrates the stacked body and the first insulator in the first direction. The first insulating member penetrates the stacked body and the second insulator in the first direction and is adjacent to the first hole via a first electrode in a third direction crossing the first direction and the second direction, and has an opening diameter larger than that of the first insulator.

Abstract: A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.

Abstract: According to one embodiment, a method for producing a semiconductor device includes forming a first film on a substrate. A second film is formed on the first film. A recess is formed in the second film. First processing by which a third film is formed on the second film to form a side face of the recess with the second film and second processing by which the first film exposed in the recess is processed by using the second and third films, are executed one or more times. In relation to an N-th (N is an integer greater than or equal to 1) first processing, before the third film is formed on the second film, a surface inclined with respect to the side face of the recess is formed above the side face of the recess.

Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.

Abstract: A method for manufacturing a semiconductor device includes forming a first mask layer having a first opening on an underlying layer; forming a first layer in a space where the underlying layer is selectively removed via the first opening; forming a second mask layer on the first mask layer and the first layer, the second mask layer having a second opening crossing the first opening; and selectively removing the first layer at a portion where the first opening and the second opening cross. At least one of the first and second mask layers having openings including the first or second opening, the openings being arranged in the first mask layer along a first direction, and/or being arranged in the second mask layer along a second direction, the first opening crossing the second opening in the first direction, and the second opening crossing the first opening in the second direction.

Abstract: A semiconductor memory device according to an embodiment, includes a first semiconductor member, a second semiconductor member, an insulating member, a plurality of electrode films, a first electrode, and a second electrode. The first semiconductor member and the second semiconductor member are separated in a first direction and extending in a second direction. The second direction crosses the first direction. The insulating member is provided between the first semiconductor member and the second semiconductor member. The plurality of electrode films are arranged to be separated from each other along the second direction. Each of the electrode films surrounds the first semiconductor member, the second semiconductor member, and the insulating member when viewed from the second direction. The first electrode is provided between the first semiconductor member and the electrode film. The second electrode is provided between the second semiconductor member and the electrode film.

Abstract: A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, a stacked body, and a first insulating film. The stacked body is provided on the semiconductor substrate. The stacked body includes first films, and second films being conductive. The first films and the second films are stacked alternately. The first insulating film extends in a stacking direction of the stacked body. The second films include a first portion and a second portion. The first portion is positioned between the first films. The second portion has a surface contacting the first insulating film in a direction perpendicular to the stacking direction.

Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.

Abstract: A semiconductor memory device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a first conductive film provided on a first region of the first insulating film, a second conductive film provided on a second region of the first insulating film, a first stacked body provided on the first conductive film, a second stacked body provided on the second conductive film, a first semiconductor pillar, and two conductive pillars. In the first stacked body, a second insulating film and an electrode film are stacked alternately. In the second stacked body, a third insulating film and a first film are stacked alternately. The two conductive pillars extend in the first direction through the second stacked body, are separated from the second conductive film, sandwich the second conductive film, and are connected at a bottom ends of the second conductive pillars to the semiconductor substrate.

Abstract: A semiconductor memory device according to one embodiment, includes a first electrode film, a plurality of semiconductor members, and a charge storage member. The first electrode film includes three or more first portions and a second portion connecting the first portions to each other. The first portions extend in a first direction and are arranged along a second direction that intersects with the first direction. The plurality of semiconductor members are arranged along the first direction between the first portions and extending in a third direction. The third direction intersects with a plane containing the first direction and the second direction. The charge storage member is disposed between each of the semiconductor members and each of the first portions. The second portion is disposed between the semiconductor members.