Abstract: An electrostatic precipitator including an outer electrode of a tubular shape whose internal space is passed through by gas to be processed, and an inner electrode arranged in the internal space so as to be coaxial with the outer electrode, is provided. A ratio Ra/Rb being a ratio of an outer radius Ra of the inner electrode to an inner radius Rb of the outer electrode is smaller than 1/e (where e is a base of a natural logarithm). The ratio Ra/Rb may be smaller than ½e. The outer radius Ra of the inner electrode may be from 1 mm to 10 mm, and the inner radius Rb of the outer electrode may be from 10 mm to 100 mm.

Abstract: A method of manufacturing a laminated substrate including an insulation substrate comprised of ceramic, and a front electrode formed on a front surface of the insulation substrate, a semiconductor element being mountable on a front surface of the front electrode, including forming the front electrode on the front surface of the insulation substrate, and before or after the forming the front electrode, applying laser processing to the front surface of the insulation substrate at an outer peripheral area of the front electrode to modify a conductive property of the front surface of the insulation substrate to have electrical conductivity.

Abstract: A method of manufacturing a laminated substrate including an insulation substrate comprised of ceramic, and a front electrode formed on a front surface of the insulation substrate, a semiconductor element being mountable on a front surface of the front electrode, including forming the front electrode on the front surface of the insulation substrate, and before or after the forming the front electrode, applying laser processing to the front surface of the insulation substrate at an outer peripheral area of the front electrode to modify a conductive property of the front surface of the insulation substrate to have electrical conductivity.

Abstract: A gate driving circuit and method can improve the tradeoff relation between the noise and the loss caused in the turn-OFF switching of semiconductor device. The gate driving circuit includes first and second series circuits. The first series circuit includes first and second MOSFETs connected in series. The gate terminal of the semiconductor device is connected to a negative potential side of the first MOSFET and a positive potential side of the second MOSFET. The emitter of the semiconductor device is connected to the negative potential side of the second MOSFET or a DC power source. The second series circuit includes a capacitor and a third MOSFET connected in series. The second series circuit is connected in parallel with the second MOSFET. The semiconductor device is turned OFF by turning ON the second and third MOSFETs and turning OFF the first MOSFET.

Abstract: A gate driving circuit and method can improve the tradeoff relation between the noise and the loss caused in the turn-OFF switching of semiconductor device. The gate driving circuit includes first and second series circuits. The first series circuit includes first and second MOSFETs connected in series. The gate terminal of the semiconductor device is connected to a negative potential side of the first MOSFET and a positive potential side of the second MOSFET. The emitter of the semiconductor device is connected to the negative potential side of the second MOSFET or a DC power source. The second series circuit includes a capacitor and a third MOSFET connected in series. The second series circuit is connected in parallel with the second MOSFET. The semiconductor device is turned OFF by turning ON the second and third MOSFETs and turning OFF the first MOSFET.

Abstract: A switching element with bistable characteristics which has switching characteristics stabilized by raising transition probability. The switching element has an organic bistable material layer between at least two electrodes. The organic bistable material layer contains an organic bistable compound having two stable resistance values to an applied voltage, wherein the switching element has thin films of a first electrode layer, a metal microparticle-containing layer, the organic bistable material layer, and a second electrode layer, formed on a substrate in this order, and the metal microparticle-containing layer contains metal microparticle and the organic bistable compound.

Abstract: The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.

Abstract: A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Abstract: A switching device in which an organic bistable material layer containing an organic bistable compound having two types of stable resistance against an applied voltage is provided between at least two electrodes. In the switching device, a first electrode layer, an electric charge injection suppressing layer, an organic bistable material layer and a second electrode layer are sequentially formed on a substrate as respective thin films, in which the electric charge injection suppressing layer contains an electrically conductive layer which allows an electric charge injection amount from the first electrode layer to the organic bistable material layer to be small compared with that in a case in which the electric charge is directly injected from the first electrode layer to the organic bistable material layer without providing the electric charge injection suppressing layer.

Abstract: A switching device contains a thin film containing an organic material disposed between at least two electrodes, and the organic material is, for example, a triphenylamine compound represented by the general formula (I):

Abstract: A gate driving circuit and method can improve the tradeoff relation between the noise and the loss caused in the turn-OFF switching of semiconductor device. The gate driving circuit includes first and second series circuits. The first series circuit includes first and second MOSFETs connected in series. The gate terminal of the semiconductor device is connected to a negative potential side of the first MOSFET and a positive potential side of the second MOSFET. The emitter of the semiconductor device is connected to the negative potential side of the second MOSFET or a DC power source. The second series circuit includes a capacitor and a third MOSFET connected in series. The second series circuit is connected in parallel with the second MOSFET. The semiconductor device is turned OFF by turning ON the second and third MOSFETs and turning OFF the first MOSFET.

Abstract: A switching element with bistable characteristics which has switching characteristics stabilized by raising transition probability. The switching element has an organic bistable material layer between at least two electrodes. The organic bistable material layer contains an organic bistable compound having two stable resistance values to an applied voltage, wherein the switching element has thin films of a first electrode layer, a metal microparticle-containing layer, the organic bistable material layer, and a second electrode layer, formed on a substrate in this order, and the metal microparticle-containing layer contains metal microparticles and the organic bistable compound.

Abstract: The organic EL display device includes first and second sets of stripe electrodes; third and fourth sets of stripe electrodes crossing the stripe electrodes of the first and second sets; and pixels, each including a light emitting section, one of the electrodes of which is connected electrically to the stripe electrode of the first set, a transistor element connected electrically to the stripe electrode of the fourth set and to the other electrode of the light emitting section, the transistor element controlling the current flowing through the light emitting section, a first rectifying element connected to the gate electrode of the transistor element and the stripe electrode of the second set, a second rectifying element connected to the gate electrode of the transistor element and the stripe electrode of the third set, and a capacitor connected to the gate electrode of the transistor element and the stripe electrode of the fourth set.

Abstract: A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.

Abstract: The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.

Abstract: An organic EL display device and method of forming and driving the same is matrix-driven by using a two-terminal nonlinear element. A display device having a substrate and first stripe electrodes, second stripe electrodes disposed crosswise to the first stripe electrodes, and a plurality of pixels disposed overlappingly between the first and second stripe electrodes on the substrate. Each pixel is provided with a switching element including a two-terminal nonlinear element connected electrically to the first stripe electrodes, a light-emitting portion connected electrically to the switching element and the second stripe electrodes, and a capacitor portion containing an organic dielectric material as a dielectric layer, connected electrically to the switching element and the second stripe electrodes in parallel with the light-emitting portion.

Abstract: A switching device in which an organic bistable material layer containing an organic bistable compound having two types of stable resistance against an applied voltage is provided between at least two electrodes. In the switching device, a first electrode layer, an electric charge injection suppressing layer, an organic bistable material layer and a second electrode layer are sequentially formed on a substrate as respective thin films, in which the electric charge injection suppressing layer contains an electrically conductive layer which allows an electric charge injection amount from the first electrode layer to the organic bistable material layer to be small compared with that in a case in which the electric charge is directly injected from the first electrode layer to the organic bistable material layer without providing the electric charge injection suppressing layer.

Abstract: A flexible capacitor easily produced at low temperature. The capacitor has a dielectric material layer and two electrodes sandwiching the layer. The dielectric material layer contains metal microparticles and/or an organic charge trapping material in an organic insulating material, and the metal microparticles, have an ionization potential and an electron affinity at an energy level between the ionization potential and the electron affinity of the organic insulating material. Once the metal microparticles are charged by applying a voltage, the charge is trapped in the metal microparticles, due to the metal microparticles' energy level relative to the organic insulating material. The trapped charge acts in the same manner as dielectric polarization in the dielectric material, so that extremely large dielectric constant can be obtained practically even when the organic insulating material has a small dielectric constant.

Abstract: The present invention provides a switching element in which the compositional deviation of material is suppressed and that attains uniform bistability performance and is suitable for mass production. In a switching element comprising an organic bistable material, which exhibits two stable states in resistance under applied voltage, arranged between at least two electrodes, the organic bistable material comprises at least a compound having an electron-donating functional group and an electron-accepting functional group in each molecule. It is preferred that, for example, an aminoimidazole type compound, a pyridone type compound, a stilbene type compound or a butadiene type compound be used as the above compound.