Abstract: An information collection apparatus includes: a sitting sensor detecting that a user of a toilet bowl in a toilet is sitting on a toilet seat placed on the top surface of a rim of the bowl; an information collector collecting information about an excretion in the bowl; and a housing in which the sensor and the collector are placed. The apparatus includes: a bridge component bridging the inside of the rim and the outside of the rim by placing part of the component on the top surface of the rim of the bowl and sandwiching the rim; and a fitting being attached to an end of the component in a direction of the inside of the rim and attaching the housing. The apparatus includes a change mechanism changing the distance from the end to the housing in a direction along an inner wall forming the inside of the rim.

Abstract: A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.

Abstract: A film forming method for forming a silicon film on a substrate, includes supplying a silane-based gas and a termination gas to the substrate during a period. The termination gas includes an element having an electronegativity lower than an electronegativity of hydrogen, and the supplying includes terminating a dangling bond of silicon in the silicon film with the element.

Abstract: A film forming method for forming a silicon film on a substrate, includes preparing a substrate having a first film and a second film on a surface thereof, supplying a growth inhibiting gas that inhibits growth of the silicon film to the substrate, to cause physical adsorption of the growth inhibiting gas on the first film, and forming the silicon film on the first film and on the second film by supplying a silane-based gas having a silicon number 1 to the substrate having the growth inhibiting gas physically adsorbed on the first film.

Abstract: An information processing system comprises a player terminal and a server, wherein the player terminal is configured to execute: transmission processing for transmitting action identification information corresponding to a selected action to the server on the basis of an input of a selecting operation for selecting one of a plurality of actions, the server is configured to execute: update processing for updating a parameter at least on the basis of the received action identification information; and setting rendering information at least on the basis of the received action identification information, the player terminal is further configured to execute: displaying an action image on a display on the basis of the received rendering information; and setting a terminal-side wait period on the basis of an input of a specific operation, and the player terminal does not execute the transmission processing during the terminal-side wait period.

Abstract: A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.

Abstract: There is provided a film forming method including: supplying a halogen-free silicon raw material gas and a halogen-containing silicon raw material gas into a processing container while lowering a temperature of a substrate accommodated in the processing container from a first temperature to a second temperature in a temperature lowering process; and supplying the halogen-free silicon raw material gas and the halogen-containing silicon raw material gas into the processing container while maintaining the temperature of the substrate at a third temperature in a temperature stabilizing process, that occurs after the temperature lowering process.

Abstract: According to one embodiment of the present disclosure, a method for forming a crystallized semiconductor film having a specific grain size on a substrate includes: forming a seed layer on the substrate accommodated in a processing container; vacuuming an interior of the processing container to a medium vacuum or less in a state in which the substrate, on which the seed layer is formed, is accommodated in the processing container; forming an amorphous semiconductor film on the seed layer after vacuuming the interior of the processing container; and crystallizing the amorphous semiconductor film by heat processing.

Abstract: There is provided a film forming method including: supplying a halogen-free silicon raw material gas and a halogen-containing silicon raw material gas into a processing container while lowering a temperature of a substrate accommodated in the processing container from a first temperature to a second temperature in a temperature lowering process; and supplying the halogen-free silicon raw material gas and the halogen-containing silicon raw material gas into the processing container while maintaining the temperature of the substrate at a third temperature in a temperature stabilizing process, that occurs after the temperature lowering process.

Abstract: There is provided a film forming method including: supplying a halogen-free silicon raw material gas into a processing container that accommodates a substrate therein in a halogen-free silicon raw material gas supply process; supplying a halogen-containing silicon raw material gas into the processing container in a halogen-containing silicon raw material gas supply process; removing the halogen-containing silicon raw material gas inside the processing container in a halogen-containing silicon raw material gas removal process; and repeating a cycle including a sequence of the halogen-free silicon raw material gas supply process, the halogen-containing silicon raw material gas supply process, and the halogen-containing silicon raw material gas removal process in a continuous manner.

Abstract: A substrate processing apparatus includes a processing container configured to accommodate a plurality of substrates therein, a gas supply configured to supply a first raw material gas of a compound containing Si or Ge and H and a second raw material gas of a compound containing Si or Ge and a halogen element into the processing container; and an exhauster configured to evacuate an inside of the processing container, wherein the gas supply has a dispersion nozzle provided with a plurality of gas holes for discharging the first raw material gas and the second raw material gas, and the substrate processing apparatus further comprises a heater configured to heat the first raw material gas and the second raw material gas in the dispersion nozzle.

Abstract: According to one embodiment of the present disclosure, a method for forming a crystallized semiconductor film having a specific grain size on a substrate includes: forming a seed layer on the substrate accommodated in a processing container; vacuuming an interior of the processing container to a medium vacuum or less in a state in which the substrate, on which the seed layer is formed, is accommodated in the processing container; forming an amorphous semiconductor film on the seed layer after vacuuming the interior of the processing container; and crystallizing the amorphous semiconductor film by heat processing.

Abstract: A cooling mechanism includes a plurality of support stands which is provided in a vertical direction over a plurality of stages in an atmospheric transfer chamber where a down-flow is formed, a plurality of support pins which is provided in each of the support stands and supports a target object in contact with the backside of the target object. The cooling mechanism further includes a plurality of air guide plates which is provided in the support stands and cools the target object supported by the support stand located at a lower stage using the down-flow.

Abstract: A load lock device includes a vessel of which an internal pressure is variable between a pressure corresponding to a vacuum chamber and an atmospheric pressure; a purge gas supply source configured to supply a purge gas into the vessel; an exhaust device configured to evacuate an inside of the vessel; a pressure controller configured to adjust the internal pressure of the vessel to be the pressure corresponding to the vacuum chamber and the atmospheric pressure; a cooling member within the vessel configured to cool a substrate while the substrate is placed adjacent thereto; a first purge gas discharging member configured to discharge the purge gas to flow in parallel with the substrate while controlling a turbulent flow thereof; and a second purge gas discharging member formed of a porous material and configured to discharge the purge gas toward a bottom surface of the substrate from below the substrate.

Abstract: A cooling mechanism includes a plurality of support stands which is provided in a vertical direction over a plurality of stages in an atmospheric transfer chamber where a down-flow is formed, a plurality of support pins which is provided in each of the support stands and supports a target object in contact with the backside of the target object. The cooling mechanism further includes a plurality of air guide plates which is provided in the support stands and cools the target object supported by the support stand located at a lower stage using the down-flow.

Abstract: A load lock device includes a vessel of which an internal pressure is variable between a pressure corresponding to a vacuum chamber and an atmospheric pressure; a purge gas supply source configured to supply a purge gas into the vessel; an exhaust device configured to evacuate an inside of the vessel; a pressure controller configured to adjust the internal pressure of the vessel to be the pressure corresponding to the vacuum chamber and the atmospheric pressure; a cooling member within the vessel configured to cool a substrate while the substrate is placed adjacent thereto; a first purge gas discharging member configured to discharge the purge gas to flow in parallel with the substrate while controlling a turbulent flow thereof; and a second purge gas discharging member formed of a porous material and configured to discharge the purge gas toward a bottom surface of the substrate from below the substrate.