Patents by Inventor Keith Kuang-Kuo Koai

Keith Kuang-Kuo Koai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11067515
    Abstract: An apparatus for inspecting a wafer process chamber is disclosed. In one example, the apparatus includes: a sensor, a processor, and a lifetime predictor. The sensor captures information about at least one hardware part of the wafer process chamber. The processor processes the information to determine a hardware condition of the at least one hardware part. The lifetime predictor predicts an expected lifetime left for the at least one hardware part based on the hardware condition.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: July 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Stanley Shin, Kai-Hsiang Chang, Sheng Cho Lin, Keith Kuang-Kuo Koai
  • Publication number: 20210090935
    Abstract: The present disclosure provides an apparatus for fabricating a semiconductor structure, including a chuck, an edge ring surrounding the chuck, wherein the edge ring comprises a cavity, a focus ring adjacent to an edge of the chuck and over the edge ring, and a first actuator in the cavity of the edge ring and engaging with the focus ring.
    Type: Application
    Filed: September 25, 2019
    Publication date: March 25, 2021
    Inventors: KEITH KUANG-KUO KOAI, SHIH-KUO LIU, WEN-CHIH WANG, HSIN-LIANG CHEN
  • Publication number: 20210054506
    Abstract: A shower head structure and a plasma processing apparatus are provided. The shower head structure includes a plate body with a first zone and a second zone on a first surface. A plurality of first through holes are in the first zone, each of the first through holes having a diameter uniform with others of the first through holes. A plurality of second through holes are in the second zone. The first zone is in connection with the second zone, and the diameter of each of the first through holes is greater than a diameter of each of the second through holes. A plasma processing apparatus includes the shower head structure is also provided.
    Type: Application
    Filed: August 23, 2019
    Publication date: February 25, 2021
    Inventors: HUAN-CHIEH CHEN, JHIH-REN LIN, TAI-PIN LIU, SHYUE-SHIN TSAI, KEITH KUANG-KUO KOAI
  • Publication number: 20210005433
    Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 7, 2021
    Inventors: Ru-Chien CHIU, Bing-Hung CHEN, Keith Kuang-Kuo KOAI
  • Patent number: 10876208
    Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device, including a reaction chamber having a gas inlet for receiving a gas flow, a pedestal in the reaction chamber configured to support a substrate, and a first gas distribution plate (GDP) in the reaction chamber and between the gas inlet and the pedestal, wherein the first GDP is configured to include a plurality of concentric regions arranged along a radial direction, and a plurality of first holes arranged in the concentric regions of the first GDP, an open ratio of the first GDP in an outer concentric region is greater than that in an inner concentric region proximal to the outer concentric region to redistribute the gas flow.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Kai-Hsiang Chang, Keith Kuang-Kuo Koai
  • Patent number: 10868241
    Abstract: The present disclosure provides a method for fabricating a magnetic semiconductor device, including receiving a semiconductor wafer, disposing the semiconductor wafer under a first electromagnetic element, wherein the first electromagnetic element comprises a primary dimension and a secondary dimension from a top view perspective, the primary dimension being greater than the secondary dimension, and displacing the semiconductor wafer along a predetermined path along the secondary dimension of the first electromagnetic element.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Jim-Wei Wu, Li Tseng, Chia-Hsun Chang, Wen-Chih Wang, Keith Kuang-Kuo Koai
  • Publication number: 20200365797
    Abstract: The present disclosure provides a method for fabricating a magnetic semiconductor device, including receiving a semiconductor wafer, disposing the semiconductor wafer under a first electromagnetic element, wherein the first electromagnetic element comprises a primary dimension and a secondary dimension from a top view perspective, the primary dimension being greater than the secondary dimension, and displacing the semiconductor wafer along a predetermined path along the secondary dimension of the first electromagnetic element.
    Type: Application
    Filed: May 16, 2019
    Publication date: November 19, 2020
    Inventors: JIM-WEI WU, LI TSENG, CHIA-HSUN CHANG, WEN-CHIH WANG, KEITH KUANG-KUO KOAI
  • Patent number: 10784087
    Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75 ° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: September 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ru-Chien Chiu, Bing-Hung Chen, Keith Kuang-Kuo Koai
  • Publication number: 20200133112
    Abstract: An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.
    Type: Application
    Filed: October 2, 2019
    Publication date: April 30, 2020
    Inventors: Benny KU, Keith Kuang-Kuo KOAI, Wen-Hao CHENG
  • Publication number: 20200131640
    Abstract: The present disclosure provides a blocker plate, including a plate body having a plurality of through holes, a first zone from a center to a first radius of the plate body, having a first conductance, a second zone from the first radius to a second radius of the plate body, having a second conductance, a third zone from the second radius to a third radius of the plate body, having a third conductance, wherein the first radius is smaller than the second radius, the second radius is smaller than the third radius, and the second conductance is greater than the first conductance. A chemical vapor deposition (CVD) apparatus including the blocker plate is also disclosed.
    Type: Application
    Filed: June 27, 2019
    Publication date: April 30, 2020
    Inventors: HUAN-CHIEH CHEN, CHAO-CHUN WANG, CHIH-YU WU, KEITH KUANG-KUO KOAI
  • Patent number: 10626499
    Abstract: A deposition device structure is provided. The deposition device structure includes a heater in a chamber. The deposition device structure also includes a shower head over the heater. The shower head includes holes extending from a top surface of the shower head to a bottom surface of the shower head. The bottom surface of the shower head faces the heater. The bottom surface of the shower head has a first section and a second section. The second section of the bottom surface is rougher than the first section of the bottom surface.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: April 21, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Chan Lo, Huan-Chieh Chen, Yi-Fang Lai, Keith Kuang-Kuo Koai, Chin-Feng Sun, Po-Hsiung Leu, Ding-I Liu, Kai-Shiung Hsu
  • Publication number: 20200070301
    Abstract: The present disclosure provides a wet chemical heating system, including a first conduit for transporting wet chemical, a dispensing head connected to the first conduit, and a radiative heating element configured to heat the wet chemical in the first conduit and positioned at an upper stream of the dispensing head.
    Type: Application
    Filed: June 21, 2019
    Publication date: March 5, 2020
    Inventors: JI JAMES CUI, CHIA-HSUN CHANG, CHIH HUNG CHEN, LIANG-GUANG CHEN, TZU KAI LIN, CHYI SHYUAN CHERN, KEITH KUANG-KUO KOAI
  • Publication number: 20200055102
    Abstract: An apparatus includes a first support member coupled to a casing and constructed to move along a first axis through the casing and rotate around the first axis, a second support member coupled to the first support member and constructed to move along a second axis perpendicular to the first axis, and an arm pivotally coupled to the second support member and constructed to rotate around a third axis perpendicular to the first axis and the second axis. The apparatus also includes a cleaning head attached to the arm and constructed to rotate around a longitudinal axis of the arm.
    Type: Application
    Filed: June 14, 2019
    Publication date: February 20, 2020
    Inventors: SHIH-KUO LIU, CHIA-HSUN CHANG, KEITH KUANG-KUO KOAI, WAI HONG CHEAH, MING-CHUAN HUNG
  • Publication number: 20190237304
    Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75 ° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
    Type: Application
    Filed: April 12, 2019
    Publication date: August 1, 2019
    Inventors: Ru-Chien CHIU, Bing-Hung CHEN, Keith Kuang-Kuo KOAI
  • Publication number: 20190218665
    Abstract: The present disclosure provides an apparatus for fabricating a semiconductor device, including a reaction chamber having a gas inlet for receiving a gas flow, a pedestal in the reaction chamber configured to support a substrate, and a first gas distribution plate (GDP) in the reaction chamber and between the gas inlet and the pedestal, wherein the first GDP is configured to include a plurality of concentric regions arranged along a radial direction, and a plurality of first holes arranged in the concentric regions of the first GDP, an open ratio of the first GDP in an outer concentric region is greater than that in an inner concentric region proximal to the outer concentric region to redistribute the gas flow.
    Type: Application
    Filed: October 19, 2018
    Publication date: July 18, 2019
    Inventors: KAI-HSIANG CHANG, KEITH KUANG-KUO KOAI
  • Publication number: 20190162675
    Abstract: An apparatus for inspecting a wafer process chamber is disclosed. In one example, the apparatus includes: a sensor, a processor, and a lifetime predictor. The sensor captures information about at least one hardware part of the wafer process chamber. The processor processes the information to determine a hardware condition of the at least one hardware part. The lifetime predictor predicts an expected lifetime left for the at least one hardware part based on the hardware condition.
    Type: Application
    Filed: February 23, 2018
    Publication date: May 30, 2019
    Inventors: Stanley SHIN, Kai-Hsiang Chang, S.C. Lin, Keith Kuang-Kuo Koai
  • Patent number: 10269573
    Abstract: A device includes a pedestal. The pedestal includes a ground electrode, a central portion, and a peripheral portion. The ground electrode includes a top surface from which the peripheral portion is projected, thereby having a height difference between the central portion and the peripheral portion.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: April 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Kun-Mo Lin, Keith Kuang-Kuo Koai, Chih-Tsung Lee, Victor Y. Lu, Yi-Hung Lin
  • Patent number: 10262839
    Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: April 16, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ru-Chien Chiu, Bing-Hung Chen, Keith Kuang-Kuo Koai
  • Publication number: 20190032215
    Abstract: A deposition device structure is provided. The deposition device structure includes a heater in a chamber. The deposition device structure also includes a shower head over the heater. The shower head includes holes extending from a top surface of the shower head to a bottom surface of the shower head. The bottom surface of the shower head faces the heater. The bottom surface of the shower head has a first section and a second section. The second section of the bottom surface is rougher than the first section of the bottom surface.
    Type: Application
    Filed: October 5, 2017
    Publication date: January 31, 2019
    Inventors: Yen-Chan LO, Huan-Chieh CHEN, Yi-Fang LAI, Keith Kuang-Kuo KOAI, Chin-Feng SUN, Po-Hsiung LEU, Ding-I LIU, Kai-Shiung HSU
  • Publication number: 20170358430
    Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.
    Type: Application
    Filed: June 14, 2016
    Publication date: December 14, 2017
    Inventors: Ru-Chien CHIU, Bing-Hung CHEN, Keith Kuang-Kuo KOAI