Abstract: Systems and methods for controlling volumes of droplets is provided herein. In some cases, the systems comprise: a plurality of first light sources, a second light source, wherein a first light beam emitted a first light source of said plurality of first light sources is configured to intersect with a second light beam emitted from said second light source at an intersection area, wherein said system is configured to measure a characteristic of said droplet as it passes through said intersection area. Systems and methods for measuring volumes of droplets and for distinguishing between bubbles and droplets are also provided.

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

Abstract: Methods and apparatus for a PVD chamber are provided herein. In some embodiments, a selective PVD chamber includes a first housing surrounding a movable substrate support; a second housing adjacent the first housing; an opening disposed between the first housing and the second housing that partially exposes a top surface of the movable substrate support, wherein the opening includes a first curved side; and an elongate target disposed in the second housing to provide a stream of material flux from the elongate target into the first housing via the opening.

Abstract: A pliers-valve-wheel combination tool for safe and efficient working upon systems and equipment having large wheeled valves, from a ladder, lift, or platform, often with only one hand free, providing adjustable pliers for performing various maintenance tasks and a valve-wheel wrench for quickly, efficiently, and safely manipulating valves in both expected and unexpected circumstances, without a cumbersome change of tools.

Abstract: Methods and systems are provided to generate a base digital file for a garment and a custom digital file for the garment, which may be used in garment production. For example, a system may receive information providing various specifications for manufacturing a garment, generate a base digital file for the garment, receive a request to transform the garment from a first garment size to a second garment size, and then generate a custom digital file for the garment by applying custom user body measurements to the base digital file or by applying a grading scale.

Abstract: Methods and systems are provided to customize a base digital file for a garment according to a user's body measurements and generate a custom digital file for the garment, which may be used in garment production. For example, a system may receive a request to generate a custom-fit garment, customization options, and information regarding a customer's body measurements, retrieve a base digital file for the garment, identify points and edges in the base digital file of the garment, adjust the points and edges according to defined equations that take into account the user's body measurements, generate a custom digital file for the garment, and display a visual representation of the customized garment.

Abstract: Methods and systems are provided to generate a base digital file for a garment, which may be used in garment production. For example, a system may receive a library from a data source and generate a base digital file for the garment. The base digital file may include a garment identifier, a panel object associated with a panel identifier and references to garment information in the library, and a seam object representing a seam that forms a portion of the garment.

Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.

Abstract: A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.

Abstract: A shield kit for use in a process chamber includes a body configured to be inserted into a source disposed on a top surface of the process chamber. The body includes a top plate, a pair of far plates connected to the top plate, and a pair of side plates connected to the pair of far plates. The shield kit further includes a cooling manifold disposed on an outer surface the top plate within an opening of the source, and a vacuum seal disposed on the outer surface of the top plate and configured to vacuum seal the opening of the source. At least one of the pair of side plates has a gap extending that is aligned with at least one cathode opening on a top surface of the source.

Abstract: Fusion proteins comprising IL2 and IL2R? (e.g., CIRB), IL2, IL2R? and IL21R (e.g., CIRB21), and/or comprising IL2, IL2R?, and CD28 (e.g., CIRB28); natural killer (NK) cells that express the fusion proteins and methods of use thereof, e.g., to treat subjects with cancer; and regulatory T cells (T-regs) that express a fusion protein comprising IL2, IL2R?, and CD28 and methods of use thereof, e.g., to treat subjects with autoimmune disease or GVHD.

Abstract: A moveable substrate support for use in a processing chamber is provided. The moveable substrate support includes a substrate support surface and a robot, wherein the robot is configured to move the substrate support surface along a movement path. The substrate support includes a halo, and the halo protects the underlying components of the processing chamber from unwanted deposition, while the substrate support surface is moving along the movement path. The substrate support protects processing chamber components from deposition, reducing cleaning time and reducing the need for repairs of the components of the processing chamber.

Abstract: Embodiments described herein relate to shields for use in target assemblies in semiconductor process chambers. The shields can be used to shield exposed surfaces and chamber components within the process chambers such that unwanted redeposits are prevented from forming on the exposed surfaces and other chamber components. In some embodiments, the shields are electrically floating and are configured to cover the ends of the target. The target assembly has a target support secured to a mounting plate and a plurality of pins extending therefrom. Each of the shields has a shield body with an opening. The shield body has alignment features configured to align with the plurality pins such that the shield connects with the target support. Shields as described herein can be made of smooth edges, helping to minimize particle generation and to prevent arcing at least partially caused by sharp edges of shields.

Abstract: Embodiments of substrate support rings are provided herein. In some embodiments, an apparatus for processing substrates includes, a ring configured to be disposed about a peripheral edge of a substrate support to support at least a portion of a substrate disposed atop the substrate support, wherein the ring comprises a heater; and a power supply coupled to the heater to provide power to the heater.

Abstract: Embodiments of collimators and process chambers incorporating same are provided herein. In some embodiments, a collimator for use in a substrate processing chamber includes a ring; an adapter surrounding the ring and having an inner annular wall; and a plurality of spokes extending from the inner annular wall and intersecting at a central axis of the collimator.

Abstract: This system and method of for providing a tunable orbital angular momentum system for providing higher order Bessel beams comprising: an acousto-optical deflector configured to receive an input beam, deflect a first portion of the input beam a first deflection angle relative to an axis of propagation and along an optical axis and deflect a second portion of the input beam a second deflection angle relative to the optical axis; a line generator disposed along the optical angle for receiving the first portion and the second portion of the input beam and provide an elliptical Gaussian mean; a log-polar optics assembly disposed along the optical angle for receiving the elliptical Gaussian beam and wrapping the elliptical Gaussian beam with an asymmetric ring; and, a Fourier lens configured to receive the wrapped elliptical Gaussian beam.

Abstract: Methods and apparatus for producing a uniform deposition layer for a selective plasma vapor deposition (PVD) chamber. Flux generated by a cylindrical target is adjusted using a magnetron assembly that controls the amount of flux that passes through a slit in the selective PVD chamber. In some embodiments, a magnetron assembly disposed within the cylindrical has a magnetic field strength that varies along a length of the magnetron assembly. The magnetron assembly disposed within the cylindrical target may have a center height greater than either end such that flux generated during processing for a center region of the cylindrical target is directed away from the opening. In some embodiments, a magnetron assembly disposed within the cylindrical target is rotatable such that flux generated during processing for a center region of the cylindrical target is directed away from the opening or towards the opening.

Abstract: Multi-zone collimators and process chambers including multi-zone collimators for use with a multi-zone magnetron source are provided herein. In some embodiments, a multi-zone collimator for use with a multi-zone magnetron source, comprising a first collimator plate, a second collimator plate, wherein a first collimator zone having a first width is formed between the first collimator plate and the second collimator plate; and a third collimator plate, wherein a second collimator zone having a second width is formed between the second first collimator plate and the third collimator plate, wherein a length of each of the first, second and third collimator plates are different from each other.

Abstract: Methods and apparatus for physical vapor deposition (PVD) are provided herein. In some embodiments, a method for PVD includes providing a first stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface and rotating and linearly scanning the substrate through the stream of first material to deposit the first material on all features formed on the substrate, providing a second stream of an ionized dopant species from a dopant source towards the surface of the substrate at a second non-perpendicular angle to the plane of the substrate surface, and implanting the ionized dopant species in the first material deposited only on a top portion and a portion of the first and second sidewalls of all the features on the substrate by rotating and linearly scanning the substrate via the substrate support.

Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.