Patents by Inventor Keizo Kinoshita

Keizo Kinoshita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7220810
    Abstract: A polymer film having a low dielectric constant is produced polymerizing a raw material gas containing a compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents a divalent aliphatic hydrocarbon group, m is 1 or 2, n is 0 or 1, and R1 and R2 represent independently each other an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group or an aryloxy group by a plasma polymerization method.
    Type: Grant
    Filed: June 16, 2005
    Date of Patent: May 22, 2007
    Assignees: Sumitomo Chemical Company, Limited, NEC Corporation, ASM Japan K.K.
    Inventors: Nobutaka Kunimi, Jun Kawahara, Akinori Nakano, Keizo Kinoshita
  • Patent number: 7030028
    Abstract: A dual damascene structure with a lesser degree of shoulder loss is achieved. In a method for forming a dual damascene structure having a shoulder in an organic low k film layer by dry-etching the organic low k film layer 208 and a mask layer 210 formed over the organic low k film 208 using at least two different mixed gases, a first step in which the mask layer is etched using a first process gas and then the organic low k film layer is etched into a predetermined depth by continuously using the first process gas and a second step following the first step, in which the organic low k film layer is etched using a second process gas are executed. Since a protective wall is formed at a side wall of a via during the first step, the extent of the shoulder loss occurring in the junction region where a trench and a via form a junction can be reduced.
    Type: Grant
    Filed: June 26, 2001
    Date of Patent: April 18, 2006
    Assignees: Tokyo Electron Limited, NEC Corporation
    Inventors: Takuya Mori, Koichiro Inazawa, Noriyuki Kobayashi, Masahito Sugiura, Yoshihiro Hayashi, Keizo Kinoshita
  • Publication number: 20060052560
    Abstract: A copolymer film having a decreased dielectric constant which is produced by supplying at least two organic monomers as raw materials, forming a film of a copolymer comprising a backbone based on said at least two monomers on a surface of a substrate, and heating the copolymer film at a temperature higher than a temperature at which the copolymer film is formed.
    Type: Application
    Filed: July 22, 2005
    Publication date: March 9, 2006
    Applicants: Sumitomo Chemical Company, Limited, NEC CORPORATION, ASM Japan K.K.
    Inventors: Nobutaka Kunimi, Jun Kawahara, Akinori Nakano, Keizo Kinoshita
  • Publication number: 20060009600
    Abstract: A polymer film having a low dielectric constant is produced polymerizing a raw material gas containing a compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents a divalent aliphatic hydrocarbon group, m is 1 or 2, n is 0 or 1, and R1 and R2 represent independently each other an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group or an aryloxy group by a plasma polymerization method.
    Type: Application
    Filed: June 16, 2005
    Publication date: January 12, 2006
    Applicants: Sumitomo Chemical Company, Limited, NEC CORPORATION, ASM Japan K.K.
    Inventors: Nobutaka Kunimi, Jun Kawahara, Akinori Nakano, Keizo Kinoshita
  • Publication number: 20050282987
    Abstract: A copolymerized high polymer film includes plural organic polymers, as skeleton, and is manufactured by blowing more than two kinds of organic monomers of respectively specific structures, in a vapor phase condition, onto the surface of a heated substrate, through plasma being generated in a reaction chamber. As a result, manufacture of an organic high polymer film capable of further reducing the effective relative permittivity of organic polymer films as a whole can be achieved, and, at the same time, further improvement in mechanical strength of film as well as film forming speed can be achieved.
    Type: Application
    Filed: May 27, 2005
    Publication date: December 22, 2005
    Applicants: NEC Corporation, Sumitomo Chemical Company Limited, ASM Japan K.K.
    Inventors: Jun Kawahara, Keizo Kinoshita, Nobutaka Kunimi, Akinori Nakano
  • Publication number: 20040063331
    Abstract: A dual damascene structure with a lesser degree of shoulder loss is achieved. In a method for forming a dual damascene structure having a shoulder in an organic low k film layer by dry-etching the organic low k film layer 208 and a mask layer 210 formed over the organic low k film 208 using at least two different mixed gases, a first step in which the mask layer is etched using a first process gas and then the organic low k film layer is etched into a predetermined depth by continuously using the first process gas and a second step following the first step, in which the organic low k film layer is etched using a second process gas are executed. Since a protective wall is formed at a side wall of a via during the first step, the extent of the shoulder loss occurring in the junction region where a trench and a via form a junction can be reduced.
    Type: Application
    Filed: September 29, 2003
    Publication date: April 1, 2004
    Inventors: Takuya Mori, Koichiro Inazawa, Noriyuki Kobayashi, Masahito Sugiura, Yoshihiro Hayashi, Keizo Kinoshita
  • Patent number: 5818040
    Abstract: The present invention provides a neutral particle beam treatment apparatus which includes the following elements. A plasma generator is provided for generating a plasma from a treatment gas by alternation of application and discontinuation of a high frequency field. A negative ion accelerator is also provided for fetching negative ions from the plasma generated by the plasma generator and acceleration thereof to cause a negative ion beam. A neutralizer is further provided for neutralizing the negative ion beam to cause a neutral particle beam. A holder is still further provided for holding a sample at a position at which the neutral particle beam is irradiated.
    Type: Grant
    Filed: November 14, 1996
    Date of Patent: October 6, 1998
    Assignee: NEC Corporation
    Inventors: Keizo Kinoshita, Seiji Samukawa
  • Patent number: 5744796
    Abstract: In a mass spectrometer, a DC power supply amplifier is additionally provided in a circuit for generating an accelerating voltage of an electron beam for ionizing radicals. A "potential for ionization of radicals" is applied as a reference voltage of the accelerating voltage of the radical ionizing electron beam, and an output signal of the mass spectrometer is measured as a background signal strength. Then, the DC power supply amplifier is controlled to alternately supply the "potential for ionization of radicals" and a "potential slightly lower than a potential for dissociative ionization of parent gas or dissociative ionization of parent radicals", as the accelerating voltage of the radical ionizing electron beam.
    Type: Grant
    Filed: November 7, 1996
    Date of Patent: April 28, 1998
    Assignee: NEC Corporation
    Inventors: Keizo Kinoshita, Seiji Samukawa, Tetsu Mieno
  • Patent number: 5356514
    Abstract: Disclosed is an etching apparatus primarily comprising a reactive etching chamber, a post-treatment chamber connected thereto and/or a purified water treatment chamber connected to the post-treatment chamber and also a process for etching a film of Fe-containing material forming the surface of a sample, which comprises subjecting the sample to reactive etching in an atmosphere of chlorine-containing gas while the sample is heated to not lower than 250.degree. C. in vacuo, wherein the sample may be subjected to an ion shower of a gaseous mixture comprising the chlorine-containing gas and at least one inert gas while the sample is heated to not lower than 250.degree. C.
    Type: Grant
    Filed: August 27, 1991
    Date of Patent: October 18, 1994
    Assignee: NEC Corporation
    Inventor: Keizo Kinoshita
  • Patent number: 4397451
    Abstract: A scale-covered, hot-rolled steel work is heated under a reducing atmosphere and is then allowed to slowly cool while placed under the reducing atmosphere. Thereafter the work is maintained at a predetermined temperature under an oxidizing atmosphere to cause the scale to be re-oxidized. The work with the re-oxidizing scale is then allowed to stand to cool quickly, imparting fine cracks to the scales. The scales can readily be removed from the work during the subsequent pickling step.
    Type: Grant
    Filed: February 17, 1982
    Date of Patent: August 9, 1983
    Assignees: Chugai Ro Kogyo Co., Ltd., O & K Company Ltd.
    Inventors: Keizo Kinoshita, Koji Murakami, Hitoshi Ohta