Patents by Inventor Keizo Yamada

Keizo Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7550982
    Abstract: A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to election beam irradiation positions as current waveforms and comparing the current waveforms.
    Type: Grant
    Filed: October 25, 2007
    Date of Patent: June 23, 2009
    Assignee: Topcon Corporation
    Inventor: Keizo Yamada
  • Publication number: 20090088994
    Abstract: The present invention provides a battery state determining apparatus which can determine a battery state of a lead battery from an engine starting voltage accurately considering influence of a temperature of a vehicle. An engine starting voltage Vst1 obtained by correcting an engine starting voltage Vst of a lead battery at an engine starting time is calculated based upon an open-circuit voltage OCV and a temperature of a vehicle (S112), a battery determination voltage Vst_th representing a voltage of the lead battery at an engine starting time when a growth rate of internal resistance of the lead battery reaches a predetermined value from the open-circuit voltage OCV is calculated (S126), and a battery state of the lead battery is determined by determining whether an engine starting voltage Vst1 belongs to a predetermined region on a characteristic map (S132).
    Type: Application
    Filed: March 8, 2007
    Publication date: April 2, 2009
    Applicant: SHIN-KOBE ELECTRIC MACHINERY CO., LTD.
    Inventors: Yoshiaki Machiyama, Keizo Yamada, Yoshifumi Yamada, Takashi Hara
  • Publication number: 20090039274
    Abstract: A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
    Type: Application
    Filed: October 9, 2008
    Publication date: February 12, 2009
    Applicant: TOPCON Corporation
    Inventors: Takeo USHIKI, Keizo Yamada, Yohsuke Itagaki, Tohru Tsujide
  • Patent number: 7420379
    Abstract: A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current waveforms and comparing the current waveforms.
    Type: Grant
    Filed: May 19, 2006
    Date of Patent: September 2, 2008
    Assignee: Topcon Corporation
    Inventor: Keizo Yamada
  • Patent number: 7385195
    Abstract: A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.
    Type: Grant
    Filed: August 5, 2005
    Date of Patent: June 10, 2008
    Assignee: Topcon Corporation
    Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
  • Publication number: 20080079447
    Abstract: A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to election beam irradiation positions as current waveforms and comparing the current waveforms.
    Type: Application
    Filed: October 25, 2007
    Publication date: April 3, 2008
    Applicant: TOPCON CORPORATION
    Inventor: Keizo Yamada
  • Patent number: 7321805
    Abstract: A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server 1 including an estimated yield operating unit 1a for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit 1b for performing a production management of semiconductor devices ordered by a user on th
    Type: Grant
    Filed: December 6, 2004
    Date of Patent: January 22, 2008
    Assignee: Fab Solutions, Inc.
    Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
  • Publication number: 20070273329
    Abstract: A storage battery unit (1) including a storage battery (2) and a monitoring device (3) that monitors a state of the storage battery using an output of the storage battery as an input, wherein, in order to prevent the monitoring device from consuming electric power in a state before use of the storage battery and prevent nonfunctioning of the monitoring device in use of the storage battery, a starting circuit (4) is provided between the storage battery and the monitoring device (3), the starting circuit including: a main switch that holds an OFF state in a state before a load is connected to the storage battery and interrupts supply of electric power from the storage battery (2) to the monitoring device; and a switch drive circuit that detects a reduction in terminal voltage of the storage battery that occurs when the load exceeding the set value is connected to the storage battery, and sets the main switch to an ON state.
    Type: Application
    Filed: May 30, 2007
    Publication date: November 29, 2007
    Applicant: SHIN-KOBE ELECTRIC MACHINERY CO., LTD.
    Inventors: Shun Kobuse, Keizo Yamada, Yoshiaki Machiyama, Kouji Ohtsu
  • Patent number: 7232994
    Abstract: The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the insulating layer, so that a part of a top surface of the at least dummy film is shown through the at least one opening, wherein the at least dummy film has a predetermined constant thickness at least around the at least one opening. The standard test device makes it easily possible to determine or measure a thickness of a residual film on a bottom of the contact hole.
    Type: Grant
    Filed: August 5, 2005
    Date of Patent: June 19, 2007
    Assignee: Fab Solutions, Inc.
    Inventor: Keizo Yamada
  • Publication number: 20060261824
    Abstract: A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current waveforms and comparing the current waveforms.
    Type: Application
    Filed: May 19, 2006
    Publication date: November 23, 2006
    Inventor: Keizo Yamada
  • Publication number: 20060202119
    Abstract: A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.
    Type: Application
    Filed: August 5, 2005
    Publication date: September 14, 2006
    Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
  • Patent number: 7049834
    Abstract: A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current waveforms and comparing the current waveforms.
    Type: Grant
    Filed: June 13, 2005
    Date of Patent: May 23, 2006
    Assignee: Fab Solutions, Inc
    Inventor: Keizo Yamada
  • Publication number: 20060093789
    Abstract: The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the insulating layer, so that a part of a top surface of the at least dummy film is shown through the at least one opening, wherein the at least dummy film has a predetermined constant thickness at least around the at least one opening. The standard test device makes it easily possible to determine or measure a thickness of a residual film on a bottom of the contact hole.
    Type: Application
    Filed: August 5, 2005
    Publication date: May 4, 2006
    Inventor: Keizo Yamada
  • Patent number: 7002361
    Abstract: An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.
    Type: Grant
    Filed: December 6, 2004
    Date of Patent: February 21, 2006
    Assignee: Fab Solutions, Inc.
    Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki
  • Patent number: 6982418
    Abstract: The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the insulating layer, so that a part of a top surface of the at least dummy film is shown through the at least one opening, wherein the at least dummy film has a predetermined constant thickness at least around the at least one opening. The standard test device makes it easily possible to determine or measure a thickness of a residual film on a bottom of the contact hole.
    Type: Grant
    Filed: June 16, 2004
    Date of Patent: January 3, 2006
    Assignee: Fab Solutions, Inc.
    Inventor: Keizo Yamada
  • Patent number: 6975125
    Abstract: In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam, having a variable acceleration voltage, on the one or more contact holes and/or vias. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated at a plurality of acceleration voltages on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current measured for the plurality of acceleration voltages of the electron beam.
    Type: Grant
    Filed: May 10, 2004
    Date of Patent: December 13, 2005
    Assignee: Fab Solutions, Inc.
    Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
  • Patent number: 6967327
    Abstract: The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the insulating layer, so that a part of a top surface of the at least dummy film is shown through the at least one opening, wherein the at least dummy film has a predetermined constant thickness at least around the at least one opening. The standard test device makes it easily possible to determine or measure a thickness of a residual film on a bottom of the contact hole.
    Type: Grant
    Filed: June 8, 2004
    Date of Patent: November 22, 2005
    Assignee: Fab Solutions, Inc.
    Inventor: Keizo Yamada
  • Publication number: 20050237069
    Abstract: A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current waveforms and comparing the current waveforms.
    Type: Application
    Filed: June 13, 2005
    Publication date: October 27, 2005
    Inventor: Keizo Yamada
  • Publication number: 20050230622
    Abstract: A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
    Type: Application
    Filed: June 13, 2005
    Publication date: October 20, 2005
    Inventors: Takeo Ushiki, Keizo Yamada, Yohsuke Itagaki, Tohru Tsujide
  • Patent number: 6946857
    Abstract: In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam on the one or more contact holes and/or vias wherein the electron beam includes a cross-section which is greater than the one or more contact holes. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current.
    Type: Grant
    Filed: June 15, 2004
    Date of Patent: September 20, 2005
    Assignee: Fab Solutions, Inc.
    Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide