Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to disaggregating co-packaged SOC and photonic integrated circuits on an multichip package. The photonic integrated circuits may also be silicon photonics engines. In embodiments, multiple SOCs and photonic integrated circuits may be electrically coupled, respectively, into modules, with multiple modules then incorporated into an MCP using a stacked die structure. Other embodiments may be described and/or claimed.

Abstract: Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, an electronic package comprises a first buildup layer and a second buildup layer over the first buildup layer. In an embodiment, a void is disposed through the second buildup layer. In an embodiment the electronic package further comprises a first pad over the second buildup layer. In an embodiment, the first pad covers the void.

Abstract: Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, the electronic package comprises a first trace embedded in a package substrate. In an embodiment, the first trace comprises a first region, where the first region has a first width, and a second region, where the second region has a second width that is smaller than the first width.

Abstract: Embodiments of a microelectronic assembly include: a first integrated circuit (IC) die having a first memory circuit and a second memory circuit, a second IC die; a third IC die; and a package substrate. The first IC die comprises: a first portion comprising a first active region and a first backend region in contact with the first active region; and a second portion comprising a second active region and a second backend region in contact with the second active region. The second portion is surrounded by the first portion in plan view, the first memory circuit is in the first portion, the second memory circuit is in the second portion, the first active region comprises transistors that are larger than transistors in the second active region, and the first backend region comprises conductive traces that have a larger pitch than conductive traces in the second backend region.

Abstract: Embodiments of a microelectronic assembly include: a first integrated circuit (IC) die having a first memory circuit and a second memory circuit; a second IC die; a third IC die; and a package substrate. The second IC die is between the first IC die and the package substrate. The first IC die includes: a first portion comprising a first active region and a first backend region in contact with the first active region; and a second portion comprising a second active region and a second backend region in contact with the second active region. The first memory circuit is in the first portion, the second memory circuit is in the second portion, the first active region comprises transistors that are larger than transistors in the second active region, and the first backend region comprises conductive traces that have a larger pitch than conductive traces in the second backend region.

Abstract: Embodiments of a microelectronic assembly include: a first integrated circuit (IC) die having a first memory circuit and a second memory circuit; a second IC die; a third IC die; and a package substrate. The first IC die is between the second IC die and the package substrate. The first IC die comprises: a first portion comprising a first active region and a first backend region in contact with the first active region; and a second portion comprising a second active region and a second backend region in contact with the second active region. The first memory circuit is in the first portion, the second memory circuit is in the second portion, the first active region comprises transistors that are larger than transistors in the second active region, and the first backend region comprises conductive traces that have a larger pitch than conductive traces in the second backend region.

Abstract: Embodiments include package substrates and a semiconductor package with such package substrates. A package substrate includes a first conductive layer in a first magnetic layer, and a second magnetic layer over the first magnetic layer, where the first and second magnetic layers include magnetic materials. The package substrate also includes a second conductive layer in the second magnetic layer. The second conductive layer includes a plurality of first traces fully surrounded by the first and second magnetic layers. The package substrate includes a third conductive layer over the second magnetic layer. The magnetic materials may include manganese Mn ferrite materials, Zn/Mn ferrite materials, or Ni/Zn ferrite materials. The magnetic materials include material properties with a low constant value, a magnetic tangent value, a frequency, a base filler chemistry, a filler shape, a filler orientation, a filler percentage, a loading fraction value, a permeability, an insertion loss, and a resin formulation.

Abstract: Embodiments herein relate to systems, apparatuses, or processes for improving off-package edge bandwidth by overlapping electrical and optical serialization/deserialization (SERDES) interfaces on an edge of the package. In other implementations, off-package bandwidth for a particular edge of a package may use both an optical fanout and an electrical fanout on the same edge of the package. In embodiments, the optical fanout may use a top surface or side edge of a die and the electrical fanout may use the bottom side edge of the die. Other embodiments may be described and/or claimed.

Abstract: Embodiments of a microelectronic assembly that includes: a package substrate, comprising buildup layers of an organic dielectric material and a plurality of layers of conductive traces in the organic dielectric material, the package substrate having a first surface and a second surface opposite the first surface; and a plurality of integrated circuit (IC) dies coupled to the package substrate on the first side. The plurality of layers of conductive traces comprises a pair of stripline traces or microstrips in one of the layers, the stripline traces or microstrips are surrounded by air gap structures in the organic dielectric material, and the air gap structures are exposed on the first surface.

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for ground via clustering for crosstalk mitigation in integrated circuit (IC) assemblies. In some embodiments, an IC package assembly may include a first package substrate configured to route input/output (I/O) signals and ground between a die and a second package substrate. The first package substrate may include a plurality of contacts disposed on one side of the first package substrate and at least two ground vias of a same layer of vias, and the at least two ground vias may form a cluster of ground vias electrically coupled with an individual contact. Other embodiments may be described and/or claimed.

Abstract: Generally discussed herein are systems, devices, and methods to reduce crosstalk interference. An interconnect structure can include a first metal layer, a second metal layer, a third metal layer, the first metal layer closer to the first and second dies than the second and third metal layers, the first metal layer including a ground plane within a footprint of a bump field of the interconnect structure and signal traces outside the footprint of the bump field.

Abstract: A package substrate stack modeler includes a manufacturing modeler, configured to generate a model of a real package substrate stack based on an ideal design of the package substrate stack; a signal integrity model, configured to determine a signal integrity of a metal trace of the real package substrate stack; and a yield model, configured to determine a yield of the real package substrate stack; wherein the metal trace comprises a first value of a trace variable; further comprising a processor, configured to select a second value of the trace variable of the metal trace based on the determined signal integrity of the metal trace or the determined yield of the package substrate stack model.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first layer, where the first layer comprises glass, a second layer over the first layer, where the second layer comprises glass, and a third layer over the second layer, where the third layer comprises glass. In an embodiment, a pair of traces are in the second layer, and a first gap is below the pair of traces, where the first gap is in the first layer and the second layer. In an embodiment, a second gap is above the pair of traces, where the second gap is in the second layer and the third layer.

Abstract: Embodiments of the present disclosure are directed towards techniques and configurations for ground via clustering for crosstalk mitigation in integrated circuit (IC) assemblies. In some embodiments, an IC package assembly may include a first package substrate configured to route input/output (I/O) signals and ground between a die and a second package substrate. The first package substrate may include a plurality of contacts disposed on one side of the first package substrate and at least two ground vias of a same layer of vias, and the at least two ground vias may form a cluster of ground vias electrically coupled with an individual contact. Other embodiments may be described and/or claimed.

Abstract: Fine feature formation techniques for printed circuit boards are described. In one embodiment, for example, a method may comprise fabricating a conductive structure on a low density interconnect (LDI) printed circuit board (PCB) according to an LDI fabrication process and forming one or more fine conductive features on the LDI PCB by performing a fine feature formation (FFF) process, the FFF process to comprise removing conductive material of the conductive structure along an excision path to form a fine gap region within the conductive structure. Other embodiments are described and claimed.

Abstract: An apparatus is provided which comprises: a substrate, the substrate comprising crystalline material, a first set of one or more contacts on a first substrate surface, a second set of one or more contacts on a second substrate surface, the second substrate surface opposite the first substrate surface, a first via through the substrate coupled with a first one of the first set of contacts and with a first one of the second set of contacts; a second via through the substrate coupled with a second one of the first set of contacts and with a second one of the second set of contacts, a trench in the substrate from the first substrate surface toward the second substrate surface, wherein the trench is apart from, and between, the first via and the second via, and dielectric material filling the trench. Other embodiments are also disclosed and claimed.

Abstract: Methods/structures of joining package structures are described. Those methods/structures may include a die disposed on a surface of a substrate, an interconnect bridge embedded in the substrate, and at least one vertical interconnect structure disposed through a portion of the interconnect bridge, wherein the at least one vertical interconnect structure is electrically and physically coupled to the die.

Abstract: An electronic device includes a substrate including a core layer having a first surface and a second surface opposite the first surface, and at least one coaxial through-hole extending vertically through the core layer from the first surface to the second surface. The coaxial through-hole includes at least a first through-via that includes electrically conductive material extending through the core layer from the first surface to the second surface, and a conductive layer including the same or different electrically conductive material extending vertically through the core layer from the first surface to the second surface and surrounding the first through-via. The conductive layer is to be connected to a ground voltage and is electrically isolated from the first through-via.