Abstract: In the vehicle body structure including a body frame and a stabilizer which is supported by the body frame and connected to left and right front suspension arms, the body frame has an upper frame and a cross member connected to the upper frame, and the upper frame and the cross member are located upward of the front suspension arms. The cross member is connected to an air guide panel for redirecting ambient air flowing from the front of the vehicle body, and the air guide panel is arranged in a position overlapping the stabilizer in a vertical direction.

Abstract: A thermo-sensitive semiconductor element having a four-layer pnpn structure. A defect layer is formed at the junction of the p base layer and the n base layer by implantation of argon ions to provide a semiconductor element having a desired thermo-sensitive characteristic. The element is subjected to heat treatment such as annealing at temperatures in a range of from 400.degree. C. to 900.degree. C. in a nitrogen atmosphere after the argon ion implantation so that the leakage current into the element having the defect layer is controlled.

Abstract: A planar pnpn thyristor structure is prepared to include an SiO.sub.2 film with a thickness of about 10,000A wholly disposed on its main face to which pn junctions are exposed. That portion of the SiO.sub.2 film underlaid with an exposed edge of a collector junction and its adjacent portion are replaced by another SiO.sub.2 film about 1,000A thick. Then argon ions Ar.sup.+ with an implantation energy of 200 KeV are implanted into the thyristor structure through both films to permit a low lifetime region including a large number of lattice defects to be formed only in its main face portion overlaid with the thin SiO.sub.2 film resulting in a semiconductor thermally sensitive switching element effecting the switchover at a sufficiently low temperature.