Abstract: A light emitting element includes an LED element that emits an excitation light having a single peak wavelength within a range of greater than or equal to 380 nm and less than or equal to 500 nm; a fluorescent body to which at least a portion of the excitation light enters to emit fluorescence; and a light extraction surface that emits an output light formed by superimposing the excitation light and the fluorescence. The output light exhibits light emission over a range of at least greater than or equal to the peak wavelength of the excitation light and less than or equal to 1050 nm, and all of the output light have a light emission intensity of greater than or equal to a light emission intensity at 1050 nm within a range of at least the peak wavelength of the excitation light to 1050 nm.

Abstract: A light emitting element includes an LED element that emits an excitation light having a single peak wavelength within a range of greater than or equal to 380 nm and less than or equal to 500 nm; a fluorescent body to which at least a portion of the excitation light enters to emit fluorescence; and a light extraction surface that emits an output light formed by superimposing the excitation light and the fluorescence. The output light exhibits light emission over a range of at least greater than or equal to the peak wavelength of the excitation light and less than or equal to 1050 nm, and all of the output light have a light emission intensity of greater than or equal to a light emission intensity at 1050 nm within a range of at least the peak wavelength of the excitation light to 1050 nm.

Abstract: This method for producing a semiconductor light emitting element includes: a step (a) of preparing a growth substrate; a step (b) of growing a first layer made of Alx1Gay1In1-x1-y1N (0<x1?1, 0?y1?1) on an upper layer of the growth substrate in a <0001> direction; a step (c) of forming a groove portion extending along a <11-20> direction of the first layer with respect to the first layer with such a depth that a surface of the growth substrate is not exposed; a step (d) of growing a second layer made of Alx2Gay2In1-x2-y2N (0<x2?1, 0?y2?1) on an upper layer of the first layer with at least a {1-101} plane serving as a crystal growth plane; and a step (e) of growing an active layer on an upper layer of the second layer.

Abstract: The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.

Abstract: Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency. This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0?x<1, 0<y?1, x+y?1), and the active layer of the semiconductor multi-layered film element is irradiated with an electron beam from the electron beam irradiation source. This allows the semiconductor multi-layered film element to emit ultraviolet radiation out of the vessel through the ultraviolet transmitting window.

Abstract: The present invention is intended to provide an electron-beam-pumped light source capable of irradiating one surface of a semiconductor light-emitting device uniformly with an electron beam, and capable of obtaining a high light output without increasing an accelerating voltage of the electron beam and, in addition, capable of efficiently cooling the semiconductor light-emitting device. An electron-beam-pumped light source of the present invention includes: an electron beam source and a semiconductor light-emitting device excited by an electron beam emitted from the electron beam source, and characterized in that the electron beam source includes a planar electron beam emitting portion and arranged in the periphery of the semiconductor light-emitting device, and light exits from a surface through which the electron beam from the electron beam source of the semiconductor light-emitting device enters.

Abstract: Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency. This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered. film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0?x<1, 0<y?1, x+y?1), and the active layer of the semiconductor multi-layered film element is irradiated with an electron beam from the electron beam irradiation source. This allows the semiconductor multi-layered film element to emit ultraviolet radiation out of the vessel through the ultraviolet transmitting window.

Abstract: An ultraviolet irradiation device having a simple structure without using a pn junction, which can efficiently utilize a surface plasmon polariton and can emit ultraviolet light of a specific wavelength at a high efficiency. The device has at least one semiconductor multilayer film element and an electron beam irradiation source which are provided in a container having an ultraviolet-ray transmitting window and is vacuum-sealed, wherein the film element has an active layer formed of InxAlyGa1-x-yN (wherein 0?x?1, 0?y?1, and x+y?1) and having a single or multiple quantum well structure and a metal film formed on an upper surface of the active layer, composed of metal particles of aluminum or an aluminum alloy and having a nano-structure formed of the metal particles, wherein ultraviolet light is emitted to the outside through the transmitting window by irradiating the film element with electron beams from the irradiation source.

Abstract: In order to avoid irregular irradiation of a substrate, a light irradiation device is provided, comprised of a plurality of adjacently arranged segment light sources wherein a plurality of LEDs is arranged on a substrate, wherein said segment light source comprises an integrator lens arranged such as to be irradiated with light of said plurality of LEDs and a condenser lens arranged such as to be irradiated with light transmitted by said integrator lens, said integrator lens consisting of a plurality of cell lenses, whose aperture sizes at that side of said integrator lens that opposes said LEDs have different dimensions. Alternatively, a mask is provided at that side of said integrator lens which opposes said LEDs, said mask having apertures at positions corresponding to a respective one of said cell lenses, the mask apertures having sizes of different dimensions.

Abstract: Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.

Abstract: Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.

Abstract: A connecting fastener 1 in which a first member 2 and a second member 3 are linked so that they can turn relative to one another is provided with (1) a first plate part 5 which is fixed to a fixed member 2; (2) a second plate part 6 which is fixed to a second member 3; and (3) a hinge 7 set in place between the first plate part and the second plate part and supporting both plate parts so that they can turn relative to one another; the first plate part, second plate part and hinge part forming an integral piece as they are made of a synthetic resin. Then, a spring 9 is set in place on the first plate part 5 and the second plate part 6, the spring 9 energizing so that both plate parts are in a non-turning state on either side of the hinge 7.

Abstract: A connecting fastener 1 in which a first member 2 and a second member 3 are linked so that they can turn relative to one another is provided with (1) a first plate part 5 which is fixed to a fixed member 2; (2) a second plate part 6 which is fixed to a second member 3; and (3) a hinge 7 set in place between the first plate part and the second plate part and supporting both plate parts so that they can turn relative to one another; said first plate part, second plate part and hinge part forming an integral piece as they are made of a synthetic resin. Then, a spring 9 is set in place on the first plate part 5 and the second plate part 6, said spring 9 energizing so that both plate parts are in a non-turning state on either side of the hinge 7.