Abstract: A robot apparatus according to an embodiment of the present technology includes a hand part, a plurality of sensor parts, and a control apparatus. The hand part with a plurality of finger parts is capable of holding a workpiece. The plurality of sensor parts is respectively provided to the plurality of finger parts. The plurality of sensor parts respectively has first detection regions capable of detecting pressure components parallel to a first axis direction which is a holding direction for the workpiece and second detection regions capable of detecting pressure components parallel to a second axis direction intersecting with the first axis direction. The control apparatus is configured to generate a control command for controlling the hand part on the basis of outputs from the plurality of sensor parts.

Abstract: The manufacturing method includes: performing testing of samples having the same configuration as the torque measuring device to be manufactured to find a coil balance Cb that is a ratio (R1×R3)/(R2×R4) of a product R1×R3 of resistance values R1 and R3 of one pair of opposite sides of the four sides of a bridge circuit 8, and a product R2×R4 of resistance values R2 and R4 of another pair of opposite sides of the four sides, and a temperature change rate VT of output voltage Vo of a sensor portion 4, and acquiring a relationship X between the coil balance Cb and the temperature change rate VT from the test results; and measuring the resistance values R1, R2, R3, R4 of the four sides to find the coil balance Cb to find the temperature change rate VT from the relationship X for the torque measuring device to be manufactured.

Abstract: Disclosed is a curable resin composition that has excellent curability by irradiation of light and heating and that is suitable for such applications as liquid encapsulants, liquid adhesives, adhesives for camera modules, and liquid crystal sealants. The curable resin composition contains (A) an aromatic epoxy resin having an allyl group, (B) a thiol-based curing agent, (C) a photoradical initiator, and (D) a thermally latent curing agent. Preferably, (A) the compound having an allyl group and an epoxy group is an aromatic epoxy resin having an allyl group. Preferably, the thiol-based curing agent, which is component (B), is in liquid form at 25° C.

Abstract: A sensor including: a base material having a surface on which streaks are formed along a first direction in a plan view; and a conductive film pattern formed on or above the surface and configured to connect mutually different positions in an in-plane direction of the surface in a shape in which a length of a conductive path is longer than a length of a straight line connecting the different positions, in which in a plan view, the shape of the conductive film pattern comprises a shape in which each of straight lines parallel to the first direction passes across a conductive path center line of the conductive film pattern zero times or once but does not pass across the conductive path center line twice or more.

Abstract: A plasma processing apparatus includes: a chamber; first and second matching circuits; a first RF generator that generates a first RF pulsed signal including pulse cycles in which each cycle includes first, second, and third periods, the first RF pulsed signal has first, second, and third power levels in the first, second, and third periods, respectively; a second RF generator that generates a second RF pulsed signal including the pulse cycles in which the second RF pulsed signal has fourth and fifth power levels in the first period and one of the second and third periods, respectively; and a third RF generator that generates a third RF pulsed signal including the pulse cycles in which the third RF pulsed signal has sixth and seventh power levels in the second period and one of the first and third periods, respectively.

Abstract: A coding method is a coding method executed by a coding apparatus. The coding method includes partitioning a first block having a predetermined size in an original image into a group of second blocks each being a block serving as a unit for coding, by quad tree, ternary tree, or binary tree, and predicting movement for each of the second blocks. The partitioning includes first sub-partitioning and second sub-partitioning, the first sub-partitioning includes partitioning the first block into blocks each having a size selected from sizes determined according to the quad tree, the ternary tree, or the binary tree, and the second sub-partitioning includes further partitioning the blocks each having the selected size to generate the second blocks.

Abstract: There is provided a data processing device 10 that performs a convolution operation of two pieces of input data of 2M×N bits (N is a positive integer and M is a natural number) width with a minimum accuracy of the convolution operation being N bits, and performs processing corresponding to a plurality of the consecutive M, the data processing device 10 including: a product-sum operation unit 101 that performs a product-sum operation according to the value of M; a shifter 102 that performs shift processing on a result of a product-sum operation of the product-sum operation unit 101 in a case where the value of M is not 0; an addition unit 103 that performs addition processing on each output of the shifter 102 or the product-sum operation unit 101 according to the value of M; a selector 105 that selects an output from the addition unit 103 according to the value of M; a cumulative addition unit 106 that cumulatively adds the outputs from the selector 105; and a cumulative addition memory 107 that stores outputs

Abstract: Provided herein are compositions and methods for the treatment of a cancer. Said compositions comprise an FGFR kinase inhibitor. Some embodiments comprise combination therapy featuring the FGFR kinase inhibitor with at least one oncology therapeutic agent.

Abstract: An RF system includes: a first RF generator configured to generate a first RF pulsed signal including a plurality of first pulse cycles, each first pulse cycle including a first period, a second period, and a third period; a second RF generator configured to generate a second RF pulsed signal including a plurality of second pulse cycles, each second pulse cycle including a fourth period and a fifth period; and a third RF generator configured to generate a third RF pulsed signal including a plurality of third pulse cycles, each third pulse cycle including a sixth period and a seventh period.

Abstract: A detection device generates plural attractors based on brainwave data. Subsequently, the detection device calculates a Betti number by subjecting the attractors to persistent homology transform. The detection device determines an onset of encephalopathy based on a first order component of a Betti sequence calculated based on the Betti number.

Abstract: A method for forming a semiconductor device can include providing a substrate having a patterned structure comprising semiconductor materials, where the patterned structure has a side profile including indentations, such as a patterned film stack, and where a spacer layer is conformally deposited over the patterned structure and within the indentations, reacting a surface of the spacer layer with a plasma-excited first etch gas to form a reacted layer on the spacer layer, wherein the plasma-excited first etch gas includes fluorine, hydrogen, and nitrogen, and removing at least part of the reacted layer by ion bombardment from exposure to a plasma-excited second etch gas. The spacer layer can be SiOCN. The reacted layer can be ammonium fluorosilicate. The first etch gas can contain SF6, H2, and N2, or NF3, H2, and N2. The reacting and removing can be done at room temperature in a same chamber.

Abstract: A plasma processing apparatus includes: a chamber; first and second matching circuits; a first RF generator generating a first RF pulsed signal including a plurality of first pulse cycles in which each cycle includes first, second, and third periods, and the first RF pulsed signal has first, second, and third power levels in first, second, and third periods, respectively; a second RF generator generating a second RF pulsed signal including a plurality of second pulse cycles in which each cycle includes fourth and fifth periods, and the second RF pulsed signal has fourth and fifth power levels in fourth and fifth periods, respectively; and a third RF generator generating a third RF pulsed signal including a plurality of third pulse cycles in which each cycle includes sixth and seventh periods, and the third RF pulsed signal has sixth and seventh power levels in sixth and seventh periods, respectively.

Abstract: Provided herein are compositions and methods for the treatment of a cancer. Said compositions comprise a RAF inhibitor. Some embodiments comprise combination therapy featuring the RAF inhibitor with at least one oncology therapeutic agent.

Abstract: A sensor device according to an embodiment of the present disclosure includes a first pressure distribution sensor disposed in contact with a first support, and a second pressure distribution sensor disposed in contact with a second support. A center position of a pressure distribution to be detected due to gripping of an object-to-be-gripped based on when the object-to-be-gripped in a placed state is gripped by the first support and the second support is set to a first center position. In addition, a center position of a pressure distribution to be detected due to gripping of the object-to-be-gripped based on when the object-to-be-gripped is gripped and lifted by the first support and the second support is set to a second center position. In this case, respective shift amounts of the first pressure distribution sensor and second pressure distribution sensor are different from each other. Each of the shift amounts is a difference between the first center position and the second center position.

Abstract: A three-axis sensor includes: a first detection layer having a first surface, and a second surface on side opposite to the first surface, and including a first sensing section of a capacitive type; a second detection layer having a first surface opposed to the second surface of the first detection laver, and including a second sensing section of the capacitive type; a first electrically conductive layer provided to be opposed to the first surface of the first detection layer; a second electrically conductive layer provided between the first detection layer and the second detection layer; a separation layer provided between the first detection layer and the second electrically conductive layer to separate the first detection layer and the second electrically conductive layer from each other; a first deformation layer that is provided between the first electrically conductive layer and the first detection layer, and is elastically deformed in accordance with pressure acting in a thickness direction of a sensor;

Abstract: A robot apparatus according to an embodiment of the present technology includes a hand portion, an elastically deformable sensor portion, and a control device. The hand portion includes at least two finger portions each having a holding surface capable of holding a workpiece. The sensor portion is disposed on the holding surface of at least one finger portion of the two finger portions and includes a plurality of detection elements that detects a pressure acting on the holding surface. The control device includes a signal generation section capable of generating a hold command to cause the hand portion to hold the workpiece with a predetermined holding force and capable of correcting the holding force on the basis of an output of the sensor portion and a duration of an operation of holding the workpiece.

Abstract: A method for fabricating a semiconductor device includes forming a pattern of trenches by etching a first layer formed over an underlying layer of a substrate, each of the trenches having an aspect ratio (AR) in a range with a lower limit of a first AR and an upper limit of a second AR, the pattern including a low-AR trench having the first AR and a high-AR trench having the second AR, the AR of a trench being a ratio of its depth to its opening width, the etching including: executing a first recipe in a plasma chamber to anisotropically etch the first layer for a first duration by flowing etchants through the chamber, an etch rate of the first layer being higher on the low-AR trench relative to that on the high-AR trench; and after executing the first recipe, executing a second recipe in the plasma chamber to etch the first layer anisotropically and concurrently deposit oxygen-containing etch byproducts to passivate exposed portions of sides of the trenches, the etch rate of the first layer being lower on th

Abstract: To perform control for stably gripping a workpiece. Provided is a robot system including: a robot; and a control device that controls a robot, the robot including an actuator unit and an end effector provided at a distal end of the actuator unit, the end effector including a three-axis sensor configured to be capable of detecting a gripping force of the end effector and a shear force acting on a gripping surface of the end effector, and the control device controlling the gripping force of the end effector on the basis of a friction coefficient prescribed in advance and the shear force detected by the three-axis sensor.

Abstract: A robot capable of performing precise work is provided. The robot includes an actuator unit and an end effector provided at a tip of the actuator unit. The end effector includes a first sensor capable of detecting a pressure distribution in a contact region coming into contact with a workpiece, and a second sensor capable of detecting position information of the contact region.

Abstract: A plasma processing apparatus includes a first power source configured to supply a first electric signal to an antenna, the first electric signal including a first RF signal having a first RF frequency; a second power source configured to supply a second electric signal to at least one electrode, the second electric signal including a second RF signal having a second RF frequency; a third power source configured to supply a third electric signal to the at least one electrode, the third electric signal including a third RF signal or a DC signal having a third RF frequency that is lower than the first RF frequency and the second RF frequency; and a controller configured to control the first power source, the second power source, and the third power source so as to selectively execute a first, a second, and a third plasma processing mode.