Abstract: A first IC chip having an electrode pad to which a re-wiring layer is not connected and a second IC chip having an electrode pad to which the re-wiring layer is connected are electrically connected to each other via a conductor post formed on the electrode pad on the first IC chip, thereby electrically connecting and integrating the first and second IC chips.

Abstract: A first IC chip having an electrode pad to which a re-wiring layer is not connected and a second IC chip having an electrode pad to which the re-wiring layer is connected are electrically connected to each other via a conductor post formed on the electrode pad on the first IC chip, thereby electrically connecting and integrating the first and second IC chips.

Abstract: A zinc-nickel alloy plating solution in an aqueous solution comprising, as represented in terms of ions, 4-30 g/liter of zinc and 0.05-4 g/liter of nickel, together with 50-220 g/liter of an alkali hydroxide, 4-110 g/liter of a complexing agent, 0.1-10 g/liter of a primary brightener, 0.01-0.2 g/liter of a booster brightener and preferably, further, 0.01-0.05 g/liter of a tertiary brightener. The primary brightener is at least one selected from the reaction products of amines such as ethylenediamine or its methyl-substituted derivatives, propylenediamine or its methyl-substituted derivatives, diethylenetriamine or its methyl-substituted derivatives, and the like with epihalohydrin. The booster brightener is at least one selected from aromatic aldehydes such as anisaldehyde, vanillin, heliotropin, veratraldehyde, and the like. The tertiary brightener is at least one selected from tellurium oxide, tellurous acid or its salts, or telluric acid or its salt.

Abstract: A process for forming high resolution resist patterns using a positive type resist material comprising a photoactive resin having phenolic hydroxyl groups, an organic solvent, and 5 to 50% by weight of trimethylsilylnitride.The process for forming high resolution mask patterns comprises the steps of forming a first resist layer on a wafer for planarizing the wafer surface, forming a second resist layer on said first resist layer by using the positive type resist material mentioned above wherein the first resist layer has a higher plasma etch rate than the second resist layer, exposing and removing the second resist layer so as to form a mask pattern, and subjecting the mask pattern and the first resist layer to a reactive ion etching so as to removce the first resist layer by using the mask pattern as an etching mask.

Abstract: A positive type resist material with high oxygen plasma resistance and a process for forming high resolution resist patterns using the resist material are disclosed. The positive type resist material comprises a photoactive resin, an organic solvent, and 5 to 50% by weight of trimethylsilylnitrile.A compound of a phenol resin having phenolic hydroxyl groups and a photoactive compound, or phenolformaldehyde is used as an example of the photoactive resin. As the solvent, selected from the group consisting of 1,2-ethoxyl acetate, methyl ethyl ketone, xylene, and n-butyl acetate are used alone or in combination.

Abstract: A thin material film for the manufacture of a semiconductor device is inspected in the presence of pinholes therein. This is achieved by forming a reactive material film which can gasify through a chemical reaction with a reactive solution on the surface of a semiconductor substrate and thin material film to be tested which can chemically resist the reactive solution is formed on the surface of the reactive material film, whereby the structure obtained by the above steps is immersed into the reactive solution.

Abstract: A process for forming heat resistant resin films comprising the steps of admixing a polyimide resin precursor solution, for example, a solution containing a reactant obtained from pyrromellitic dianhydride, 3,3',4,4'-benzophenyltetracarboxylic acid dianhydride, 4,4'-diaminodiphenyl ether, and 4,4'-diaminodiphenyl ether-3-carbonic amide with an organosilicic compound solution, coating a silicon substrate with the resulting admixture, and subjecting said coated silicon substrate to heat treatment.

Abstract: A method and apparatus for plating an article having a portion that needs no plating at a high speed including as main components a chuck for chucking the article at the portion above stated and a shield cover for enclosing the chuck, maintaining a space therebetween. The space indicated above works to prevent an electrolyte from raising its level, thus keeping said portion out of said the electrolyte.