Patents by Inventor Ken Ohashi

Ken Ohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180241076
    Abstract: The present invention addresses the problem of providing: a negative electrode that is for a lithium ion secondary battery, that has high initial charge/discharge efficiency, and that has high energy density; a lithium ion secondary battery comprising the negative electrode for a lithium ion secondary battery; and a method for producing the negative electrode for a lithium ion battery that makes it possible to efficiently pre-dope an alkali earth metal or an alkali metal such as lithium. In order to solve this problem, this negative electrode for a lithium ion secondary battery comprises a negative electrode mixture layer containing at least: an alloy material (A) comprising tin or silicon capable of occluding lithium; carbon particles (B); an imide bond-containing polymer (C); and a polycyclic aromatic compound (D). The amount of the imide bond-containing polymer (C) within the negative electrode mixture layer is 3-13 mass %.
    Type: Application
    Filed: August 2, 2016
    Publication date: August 23, 2018
    Applicants: MITSUI CHEMICALS, INC., SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Katsunori NISHIURA, Masaki SARUYAMA, Yoshihiro SAKATA, Hitoshi ONISHI, Akira EDA, Ken OHASHI, Masahiro FURUYA, Takakazu HIROSE, Hiroki YOSHIKAWA
  • Publication number: 20160336592
    Abstract: The present invention provides a negative electrode for a non-aqueous electrolyte secondary battery, containing a plurality of negative electrode active materials including at least a silicon-based active material expressed by SiOx where 0.5?x?1.6 and a carbon-based active material, the silicon-based active material containing at least one of Li2SiO3 and Li4SiO4 therein, the silicon-based active material being coated with at least one of Li2CO3, LiF, and carbon, the silicon-based active material being included in an amount of 6 mass % or more with respect to a total amount of the negative electrode active materials. There can be provided a negative electrode that enables a lithium-ion secondary battery using this negative electrode to have improved cycle performance and initial charge and discharge performance and a lithium-ion secondary battery using this negative electrode.
    Type: Application
    Filed: December 3, 2014
    Publication date: November 17, 2016
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takakazu HIROSE, Hiroki YOSHIKAWA, Hiromichi KAMO, Ken OHASHI
  • Patent number: 8388766
    Abstract: An anisotropic rare earth sintered magnet has a tetragonal R2Fe14B compound as a major magnetic phase, wherein R is Nd or a mixture of Nd with at least one rare earth element. Grains of the compound phase have two crystallographic axes, c and a-axes aligned. The biaxially aligned magnet exhibits a coercivity Hc of at least 1.6 MA/m.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: March 5, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventor: Ken Ohashi
  • Publication number: 20120105184
    Abstract: An anisotropic rare earth sintered magnet has a tetragonal R2Fe14B compound as a major magnetic phase, wherein R is Nd or a mixture of Nd with at least one rare earth element. Grains of the compound phase have two crystallographic axes, c and a-axes aligned. The biaxially aligned magnet exhibits a coercivity Hc of at least 1.6 MA/m.
    Type: Application
    Filed: October 24, 2011
    Publication date: May 3, 2012
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Ken Ohashi
  • Patent number: 8013701
    Abstract: In a magnetic circuit for providing magnetic anisotropy in the in-plane radial direction of a soft magnetic under layer, magnets for perpendicular magnetization are respectively provide on the north and south poles of a magnet for horizontal magnetization. When magnetic circuits configured thus are stacked in a plurality of stages, a magnetic field (air-gap magnetic field) formed in a gap between the magnetic circuits is superimposed by magnetic fields from the magnets for perpendicular magnetization as well as a magnetic field from the magnet for horizontal magnetization (in-plane magnetization). The pole faces of the magnets for perpendicular magnetization are disposed closer to the gap between the magnetic circuits, so that a stronger magnetic field can be formed in the gap.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: September 6, 2011
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventor: Ken Ohashi
  • Patent number: 7851076
    Abstract: In this invention, etching is not performed in the step of planarizing a polycrystalline Si wafer, but only mechanical grinding is performed for planarization. This is because, since the etching rate is crystal-face dependent, etching of the polycrystalline Si wafer unavoidably results in formation of steps due to different crystal face orientations of individual crystal grains exposed on a surface of the wafer, thus hindering precision surface planarization. Subsequently, the Si wafer surface is coated with an oxide film to form an Si wafer with oxide film prior to the final polishing stage and then a surface of the oxide film is planarized, to give a planar substrate (i.e., Si substrate with oxide film) having no step on the surface thereof.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: December 14, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventor: Ken Ohashi
  • Patent number: 7821366
    Abstract: In a magnetic circuit for providing magnetic anisotropy in the in-plane radial direction of a soft magnetic under layer, magnets for perpendicular magnetization are respectively provide on the north and south poles of a magnet for horizontal magnetization. When magnetic circuits configured thus are stacked in a plurality of stages, a magnetic field (air-gap magnetic field) formed in a gap between the magnetic circuits is superimposed by magnetic fields from the magnets for perpendicular magnetization as well as a magnetic field from the magnet for horizontal magnetization (in-plane magnetization). The pole faces of the magnets for perpendicular magnetization are disposed closer to the gap between the magnetic circuits, so that a stronger magnetic field can be formed in the gap.
    Type: Grant
    Filed: August 9, 2007
    Date of Patent: October 26, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventor: Ken Ohashi
  • Publication number: 20100117775
    Abstract: In a magnetic circuit for providing magnetic anisotropy in the in-plane radial direction of a soft magnetic under layer, magnets for perpendicular magnetization are respectively provide on the north and south poles of a magnet for horizontal magnetization. When magnetic circuits configured thus are stacked in a plurality of stages, a magnetic field (air-gap magnetic field) formed in a gap between the magnetic circuits is superimposed by magnetic fields from the magnets for perpendicular magnetization as well as a magnetic field from the magnet for horizontal magnetization (in-plane magnetization). The pole faces of the magnets for perpendicular magnetization are disposed closer to the gap between the magnetic circuits, so that a stronger magnetic field can be formed in the gap.
    Type: Application
    Filed: December 1, 2009
    Publication date: May 13, 2010
    Inventor: Ken Ohashi
  • Patent number: 7713360
    Abstract: It is an object of the present invention to provide a permanent magnet which is observed as a uniform structure without microstructures, but shows a pinning type initial magnetization curve. There is provided a rare earth permanent magnet comprising a magnetic intermetallic compound comprising R, T, N and an unavoidable impurity, wherein R is one or more rare earth elements comprising Y, T is two or more transition metal elements and comprises principally Fe and Co; wherein the magnetic intermetallic compound has an T/R atomic ratio of 6 to 14; a magnetocrystalline anisotropy energy of at least 1 MJ/m3; a Curie point of at least 100° C.; average particle diameter of at least 3 ?m; and a substantially uniform structure; wherein the rare earth permanent magnet has a structure that gives a pinning-type initial magnetization curve; and wherein the magnetic intermetallic compound has a Th2Zn17-type structure, and the like.
    Type: Grant
    Filed: February 22, 2005
    Date of Patent: May 11, 2010
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventor: Ken Ohashi
  • Publication number: 20090226667
    Abstract: A Si substrate for a magnetic recording medium having excellent surface flatness without making a processing process and deposition process of a magnetic recording layer complex, as well as a thermal conductivity that is unchanged from a bulk substrate of a single crystal and a polycrystal is provided. A metal film is deposited (S7) on a polycrystalline silicon substrate after rough polishing (S6) and silicidated or silicon-alloyed (S8). Thereafter, the film is subjected to precision polishing (S9) such as CMP polishing to increase the flatness of the substrate. Accordingly, the Si substrate for a magnetic recording medium can obtain a flat and smooth surface without being influenced by a difference between crystal orientations of the polycrystalline grains and the presence of crystal grain boundary, and can obtain heat resistance and a thermal conductivity approximately equivalent to a bulk Si substrate.
    Type: Application
    Filed: March 6, 2009
    Publication date: September 10, 2009
    Inventor: Ken Ohashi
  • Publication number: 20090220821
    Abstract: There is provided a silicon substrate for magnetic recording that does not make the process for forming a magnetic recording layer complicated, excels in surface flatness, and has a thermal conductivity equivalent to the thermal conductivity of a single crystalline or polycrystalline bulk substrate. After forming a thin Silicon film on the surface of a polycrystalline silicon substrate subjected to rough polishing (S6), the silicon film is subjected to precision polishing (S8) such as CMP polishing to raise the flatness of the substrate. Thereby, a flat and smooth surface can be obtained without being affected by difference in the crystal orientation of polycrystalline grains and the presence of crystalline grain boundary, and a thermal conductivity equivalent to the thermal conductivity of a bulk Si substrate can be achieved.
    Type: Application
    Filed: February 17, 2009
    Publication date: September 3, 2009
    Inventor: Ken Ohashi
  • Publication number: 20090098415
    Abstract: In this invention, etching is not performed in the step of planarizing a polycrystalline Si wafer, but only mechanical grinding is performed for planarization. This is because, since the etching rate is crystal-face dependent, etching of the polycrystalline Si wafer unavoidably results in formation of steps due to different crystal face orientations of individual crystal grains exposed on a surface of the wafer, thus hindering precision surface planarization. Subsequently, the Si wafer surface is coated with an oxide film to form an Si wafer with oxide film prior to the final polishing stage and then a surface of the oxide film is planarized, to give a planar substrate (i.e., Si substrate with oxide film) having no step on the surface thereof.
    Type: Application
    Filed: September 16, 2008
    Publication date: April 16, 2009
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventor: Ken OHASHI
  • Publication number: 20080233330
    Abstract: A liquid material containing a silicone material or organosilica is applied to a roughly polished surface of a polycrystalline silicon substrate to form a smooth thin film covering steps and grain boundary portions; thereafter, the thin film is subjected to a heat treatment at an appropriate temperature to allow the organic components thereof to evaporate off, thereby forming an SiO2 film; and the resulting SiO2 film is then subjected to precision polishing, such as a CMP process, to impart the substrate with a high planarity. This method makes it possible to give a planar and smooth surface with no effect reflecting differences in crystal orientation among polycrystalline grains or the presence of grain boundaries. The Si substrate for magnetic recording media thus obtained exhibits a sufficient impact resistance and an excellent surface planarity.
    Type: Application
    Filed: March 18, 2008
    Publication date: September 25, 2008
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventor: Ken Ohashi
  • Publication number: 20080074783
    Abstract: In a magnetic circuit for providing magnetic anisotropy in the in-plane radial direction of a soft magnetic under layer, magnets for perpendicular magnetization are respectively provide on the north and south poles of a magnet for horizontal magnetization. When magnetic circuits configured thus are stacked in a plurality of stages, a magnetic field (air-gap magnetic field) formed in a gap between the magnetic circuits is superimposed by magnetic fields from the magnets for perpendicular magnetization as well as a magnetic field from the magnet for horizontal magnetization (in-plane magnetization). The pole faces of the magnets for perpendicular magnetization are disposed closer to the gap between the magnetic circuits, so that a stronger magnetic field can be formed in the gap.
    Type: Application
    Filed: August 9, 2007
    Publication date: March 27, 2008
    Inventor: Ken Ohashi
  • Publication number: 20070231603
    Abstract: A magnetic field generating method and a permanent magnetic circuit for, using magnetic field heat treatment, imparting axisymmetric anisotropy in a direction parallel to the substrate to a soft magnetic body, particularly a soft magnetic backing layer for a perpendicular two-layered magnetic recording medium used in perpendicular magnetic recording. In a rare earth permanent magnetic circuit that exhibits hardly any demagnetization at high temperature, a plurality of magnet side faces 95 orthogonal to pole faces 94 are disposed with space therebetween. A magnetic field that is substantially antiparallel to magnetization 91 is generated in the space, and an unprocessed sample is inserted. Further, the permanent magnetic circuit with the unprocessed sample inserted therein is placed in a heat treatment furnace, and the unprocessed sample is rotated 96 as desired.
    Type: Application
    Filed: March 30, 2007
    Publication date: October 4, 2007
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Ken OHASHI
  • Publication number: 20070231607
    Abstract: A soft magnetic under layer (SUL) is formed on a non-magnetic substrate by an electroless plating method. The SUL formed by plating is subjected to magnetic field heat treatment on conditions that the heat treatment temperature is 150° C. to 350° C., a magnetic field applied to the substrate has a strength of 50 oersteds (Oe) or more, and the treatment time is selected within a range of five minutes to ten hours. Through the magnetic field heat treatment, magnetic anisotropy is obtained with a difference (?H=Hd?Hc) of 5 oersteds (Oe) or more in terms of absolute value between a magnetization saturation magnetic field strength (Hd) in the in-plane radial direction of a soft magnetic film and a magnetization saturation magnetic field strength (Hc) in the in-plane circumferential direction of the soft magnetic film, and the magnetic anisotropy is symmetric with respect to the axis of the substrate.
    Type: Application
    Filed: March 19, 2007
    Publication date: October 4, 2007
    Inventors: Masaru Ito, Ken Ohashi
  • Publication number: 20070111036
    Abstract: Heat treatment is performed on a plated soft magnetic film, so that liquid components and gaseous components having been taken in the film during a plating step are eliminated. The temperature of the heat treatment is preferably set at 100° C. to 350° C. The heat treatment is effective when being divided into at least two times of heat treatment: a first heat treatment performed before a polishing step and a second heat treatment performed after the polishing step.
    Type: Application
    Filed: November 14, 2006
    Publication date: May 17, 2007
    Inventors: Masaru Ito, Ken Ohashi
  • Publication number: 20060033386
    Abstract: Provided is a linear motor for use in a machine tool having high positioning accuracy. A linear motor 10 for use in a machine tool comprises: a stator 13 comprising a plurality of permanent magnets 12 which are arranged on both faces of a plate-like yoke 11 at equal intervals in a direction in which a mover moves, wherein the permanent magnets have the same shape, are magnetized in a direction perpendicular to the faces of the yoke 11, and an adjacent permanent magnet 12 has a different magnetization orientation; and a pair of movers 16 comprising armature cores 14 wound with armature coils 15 which are opposed to rows of the permanent magnets 12 provided on both the faces of the plate-like yoke 11 such that central axes of the armature cores 15 are parallel to the magnetization direction of the permanent magnets 12.
    Type: Application
    Filed: August 10, 2005
    Publication date: February 16, 2006
    Inventors: Masanobu Uchida, Koji Miyata, Ken Ohashi
  • Publication number: 20060012251
    Abstract: The invention is a linear motor that improves the processing speed of machine tools and is also a linear motor that can improve the thrust in order to achieve high acceleration. More specifically, the invention is a linear motor for use in a machine tool comprising linear motor units, each unit comprising a stator in which a plurality of permanent magnets having the same shape are mounted on both faces of a plate-like yoke at even intervals such that the permanent magnets have polarities being perpendicular to a direction in which a pair of movers move and alternating in the moving direction; and the movers in which armature cores wound with armature coils are disposed such that the armature cores are opposed to the rows of the permanent magnets on the both faces of the stator, wherein the linear motor units are disposed in parallel.
    Type: Application
    Filed: July 18, 2005
    Publication date: January 19, 2006
    Inventors: Koji Miyata, Masanobu Uchida, Ken Ohashi
  • Publication number: 20060012252
    Abstract: The invention is a linear motor that improves the processing speed of machine tools is also a linear motor with significantly reduced cogging force, with which high-speed and high-accuracy processing can be realized. More specifically, the invention is a linear motor for use in a machine tool comprising a stator in which a plurality of permanent magnets having the same shape are mounted on both faces of a plate-like yoke at even intervals such that the permanent magnets have polarities being perpendicular to a direction in which a pair of movers move and alternating in the moving direction; the movers in which armature cores wound with armature coils are disposed such that the armature cores are opposed to the rows of the permanent magnets on the both faces of the stator; and magnetic cores that are disposed on both ends of the movers such that the distance between the magnetic cores and the rows of the permanent magnets is longer than that between the armature cores and the rows of the permanent magnets.
    Type: Application
    Filed: July 18, 2005
    Publication date: January 19, 2006
    Inventors: Koji Miyata, Masanobu Uchida, Ken Ohashi