Abstract: A door-opening assisting structure eliminates exclusive operating members and provides enhanced operability and reliability by operating in sync with the opening of a door. A passive member connected to a door closer, urges the door to move in the door-closing direction, rotates forward and backwards accompanying the opening and closing of the door. This moves transmission members forward and backwards in the direction of the opening and closing of the door, respectively. An opening spring urges the transmission member to move in the same in the direction as the opening of the door. The spring is locked in a release-pressure-storing state after accumulating release pressure as a result of the movement of the transmission member. The opening spring applies release pressure due to the rotation of the passive member within the predetermined angle region of the passive member when the door is beginning to open, and then is locked in the release-pressure-storing state.

Abstract: A semiconductor device includes an isolation region (11a) formed in a semiconductor substrate (10), an active region made of the semiconductor substrate (10) surrounded by the isolation region (11a) and having a trench portion, a MIS transistor of a first-conductivity type having a gate electrode (13) formed on the active region, a first sidewall (19) formed on a side surface of the gate electrode between the gate electrode (13) and the trench portion as viewed in the top, and a silicon mixed crystal layer (21) of the first-conductivity type, the trench portion being filled with the silicon mixed crystal layer (21) of the first-conductivity type, a substrate region provided between the trench portion and the isolation region (11a, 11b) and made of the semiconductor substrate (10), and an impurity region (22) of the first-conductivity type formed in the substrate region. The silicon mixed crystal layer (21) generates stress in a channel region of the active region.

Abstract: In a semiconductor device having a first MIS transistor on a semiconductor substrate, the first MIS transistor includes a p-type semiconductor layer, a first gate insulating film, a first gate electrode, a first sidewall insulating film including at least a first sidewall, an n-type extension diffusion layer, and an n-type impurity diffusion layer. The first sidewall is not formed at the side faces of the first gate electrode on the p-type semiconductor layer. An insulating film having tensile stress is formed on the semiconductor substrate so as to cover the first MIS transistor.

Abstract: Provided is a safety needle assembly for protecting a needle point, a safety type needle assembly having a curved portion, to which an erroneous piercing preventing mechanism is added, or a safety type Hoover needle assembly thereby to prevent the piercing accident. The safety needle assembly comprises a needle having a point at its leading end, a hub for holding the root end portion of the needle, and a leading end protecting portion. The safety needle assembly is characterized by further comprising a restricting portion for restricting the distance between the needle and the hub, in that the leading end protecting portion includes a mechanism for warping the needle point, when the leading end protecting portion moves the leading end of the needle to a projecting position, thereby to accommodate the needle point in the inner side of the leading end protecting portion, so that the leading end of the needle is protected.

Abstract: There is provided a heat sink module having good thermal conductivity, excellent reliability without separation, and a space-saving property with a mechanism of sufficiently high heat radiation. The heat sink module includes: two or more heat conduction sections each having a heat sink layer formed from a heat sink material having a thermal expansion coefficient of 1×10?6/K to 8×10?6/K, an intermediate layer formed from Cu, a Cu alloy, Al, or an Al alloy, an electrically insulating layer, and an electrode layer formed from said metals, being joined in layers by a first brazing material; and a heat-radiating cooling section 7 having two or more seat surfaces being at least formed from said metals and the two or more heat conduction sections are joined by a second brazing material to seat surfaces with the heat sink layers of heat conduction sections disposed on seat surfaces.

Abstract: There is provided a stream transmitter for generating and transmitting a digest stream that is a single stream into which digests, each having a predetermined time length, cut out from the respective plurality of video contents stored in a contents storage are combined. This configuration allows a user to view the digest stream, which collects the digests of the respective contents, and select a desirable program by viewing each digest.

Abstract: A medical valve includes: (a) a housing having a hollow body opened at the top end, wherein the tip of a male luer is to be removably inserted in the housing; (b) a spike disposed to extend longitudinally in the housing, the spike except at least the top end portion being formed in an approximately tapered shape in which its outside diameter becomes progressively smaller toward the top end portion, wherein a fluid transferring passage, which is opened radially outwardly, is formed to extend longitudinally in the spike; and (c) an elastic seal having an elastically deformable tubular shape fitted on the spike to seal the spike, the elastic seal including a top end portion having an openable/closable portion to be openably closed over the spike, wherein the elastic seal is elastically deformed to be downwardly shrunk by downward pressure due to the tip of the male luer.

Abstract: A medical valve includes: (a) a housing having a hollow body opened at the top end, wherein the tip of a male luer is to be removably inserted in the housing; (b) a spike disposed to extend longitudinally in the housing, the spike except at least the top end portion being formed in an approximately tapered shape in which its outside diameter becomes progressively smaller toward the top end portion, wherein a fluid transferring passage, which is opened radially outwardly, is formed to extend longitudinally in the spike; and (c) an elastic seal having an elastically deformable tubular shape fitted on the spike to seal the spike, the elastic seal including a top end portion having an openable/closable portion to be openably closed over the spike, wherein the elastic seal is elastically deformed to be downwardly shrunk by downward pressure due to the tip of the male luer.

Abstract: A catalog of images whose lightness has been changed in accordance with human vision is generated. For this purpose, a first image having reference shadow lightness, a second image having reference highlight lightness, a third image having desired lightness, a fourth image having lightness that is visually perceived to evenly divide the lightness between the first image and the third image, and a fifth image having lightness that is visually perceived to evenly divide the lightness between the third image and the second image are generated. The first to fifth images are included in a catalog image.

Abstract: A semiconductor device includes an active region formed on a semiconductor substrate, an element isolation region formed on the semiconductor substrate so as to surround the active region, and a gate electrode formed on the active region. A region that causes tensile stress so as to improve carrier mobility in the active region is provided in the element isolation region.

Abstract: A semiconductor device includes a first MIS transistor on a first active region of a semiconductor substrate, the first MIS transistor including: a first gate insulating film provided on the first active region; a first gate electrode provided on the first gate insulating film; a first stressor insulating film provided on an upper face and side faces facing in a gate length direction of the first gate electrode such that first stress acts on a channel of the first MIS transistor in the gate length direction; and a first base insulating film provided on side faces of the first gate electrode facing in a gate width direction, wherein the side faces of the first gate electrode facing in the gate width direction are not covered with the first stressor insulating film.

Abstract: A method of coloring a surface of a zirconium-based metallic glass component includes the step of imparting interference colors by carrying out an anodizing process using an alkaline solution to form a film having a thickness of 300 nm or less on the surface of the zirconium-based metallic glass component.

Abstract: A method of forming a metallic glass includes the steps of, molding a metallic glass into a pre-formed semi-article by performing pre-forming by die casting, and performing warm press forming on the pre-formed semi-article by heating the pre-formed semi-article to a supercooled liquid temperature range.

Abstract: A method of forming a film on a zirconium-based metallic glass surface, including the steps of forming a film including oxygen, silicon and zirconium, which has a post-drying thickness of 10 ?m or less, by drying an alcohol solution containing silicon dioxide in a content of 3% or more and less than 25%, after the alcohol solution is applied to a surface of a zirconium-based metallic glass.

Abstract: A coagulation-sedimentation apparatus is designed to enable the apparatus to treat water at a higher rate. The coagulation-sedimentation apparatus includes a separation tank body 60 divided into an upper chamber 61 and a lower chamber 62 by a partition member 64. The tank body has a raw water inlet pipe 66 that introduces raw water into the upper chamber, and a water distributing passage that introduces a part of the water from the upper chamber to the lower chamber. The upper chamber has a first treated water outlet 76, and the lower chamber has a second treated water outlet 78. The flow velocity of upward flow of the water toward the first treated water outlet 76 in the upper chamber and the flow velocity of upward flow of the water toward the second treated water outlet 78 in the lower chamber can be controlled so that flocs in the upward flows can settle.

Abstract: In a semiconductor device having a first MIS transistor on a semiconductor substrate, the first MIS transistor includes a p-type semiconductor layer, a first gate insulating film, a first gate electrode, a first sidewall insulting film including at least a first sidewall, an n-type extension diffusion layer, and an n-type impurity diffusion layer. The first sidewall is not formed at the side faces of the first gate electrode on the p-type semiconductor layer. An insulating film having tensile stress is formed on the semiconductor substrate so as to cover the first MIS transistor.