Patents by Inventor Kenetsu Mizusawa
Kenetsu Mizusawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9441791Abstract: A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.Type: GrantFiled: November 30, 2012Date of Patent: September 13, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Kenetsu Mizusawa, Keiki Ito, Masahide Itoh
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Patent number: 8906193Abstract: A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.Type: GrantFiled: December 31, 2009Date of Patent: December 9, 2014Assignee: Tokyo Electron LimitedInventors: Kenetsu Mizusawa, Keiki Ito, Masahide Itoh
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Patent number: 8701593Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second processing gas branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; a first and a second additional gas branch line; a flow path switching unit; and a control unit. Before processing the substrate to be processed, the control unit performs a pressure ratio control on the branch flow control unit while the processing gas supply unit supplies the processing gas. After the inner pressures of the first and the second processing gas branch line become stable, the control unit switches the pressure ratio control to a fixed pressure control, and then the additional gas supply unit supplies the additional gas.Type: GrantFiled: July 27, 2012Date of Patent: April 22, 2014Assignee: Tokyo Electron LimitedInventor: Kenetsu Mizusawa
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Patent number: 8561572Abstract: Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means.Type: GrantFiled: January 11, 2013Date of Patent: October 22, 2013Assignee: Tokyo Electron LimitedInventor: Kenetsu Mizusawa
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Patent number: 8375893Abstract: Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means.Type: GrantFiled: June 15, 2012Date of Patent: February 19, 2013Assignee: Tokyo Electron LimitedInventor: Kenetsu Mizusawa
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Publication number: 20120291953Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second processing gas branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; a first and a second additional gas branch line; a flow path switching unit; and a control unit. Before processing the substrate to be processed, the control unit performs a pressure ratio control on the branch flow control unit while the processing gas supply unit supplies the processing gas. After the inner pressures of the first and the second processing gas branch line become stable, the control unit switches the pressure ratio control to a fixed pressure control, and then the additional gas supply unit supplies the additional gas.Type: ApplicationFiled: July 27, 2012Publication date: November 22, 2012Applicant: TOKYO ELECTRON LIMITEDInventor: Kenetsu MIZUSAWA
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Publication number: 20120247668Abstract: Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means.Type: ApplicationFiled: June 15, 2012Publication date: October 4, 2012Applicant: Tokyo Electron LimitedInventor: Kenetsu MIZUSAWA
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Patent number: 8236380Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second processing gas branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; a first and a second additional gas branch line; a flow path switching unit; and a control unit. Before processing the substrate to be processed, the control unit performs a pressure ratio control on the branch flow control unit while the processing gas supply unit supplies the processing gas. After the inner pressures of the first and the second processing gas branch line become stable, the control unit switches the pressure ratio control to a fixed pressure control, and then the additional gas supply unit supplies the additional gas.Type: GrantFiled: February 13, 2009Date of Patent: August 7, 2012Assignee: Tokyo Electron LimitedInventor: Kenetsu Mizusawa
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Patent number: 8221638Abstract: Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means.Type: GrantFiled: April 7, 2009Date of Patent: July 17, 2012Assignee: Tokyo Electron LimitedInventor: Kenetsu Mizusawa
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Publication number: 20100163112Abstract: A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.Type: ApplicationFiled: December 31, 2009Publication date: July 1, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Kenetsu Mizusawa, Keiki Ito, Masahide Itoh
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Publication number: 20090191337Abstract: Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means.Type: ApplicationFiled: April 7, 2009Publication date: July 30, 2009Applicant: TOKYO ELECTRON LIMITEDInventor: Kenetsu MIZUSAWA
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Publication number: 20090145484Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second processing gas branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; a first and a second additional gas branch line; a flow path switching unit; and a control unit. Before processing the substrate to be processed, the control unit performs a pressure ratio control on the branch flow control unit while the processing gas supply unit supplies the processing gas. After the inner pressures of the first and the second processing gas branch line become stable, the control unit switches the pressure ratio control to a fixed pressure control, and then the additional gas supply unit supplies the additional gas.Type: ApplicationFiled: February 13, 2009Publication date: June 11, 2009Applicant: TOKYO ELECTRON LIMITEDInventor: Kenetsu MIZUSAWA
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Publication number: 20070181181Abstract: A gas supply system includes a first and a second branch line branched from a processing gas supply line to be respectively connected with a first and a second gas introduction section for introducing a gas from different portions in a processing chamber and a branch flow control unit for controlling branch flows of the processing gas distributed from the processing gas supply line to the first and the second branch line based on pressures in the first and the second processing gas branch line. The gas supply system further includes an additional gas supply unit for supplying an additional gas and an additional gas supply line for allowing the additional gas to flow therein. The first or second gas introduction section is divided into a processing gas introduction section connected with the branch lines and an additional gas introduction section connected with the additional gas supply line.Type: ApplicationFiled: January 30, 2007Publication date: August 9, 2007Applicant: TOKYO ELECTRON LIMITEDInventor: Kenetsu MIZUSAWA
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Publication number: 20070175391Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second processing gas branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; a first and a second additional gas branch line; a flow path switching unit; and a control unit. Before processing the substrate to be processed, the control unit performs a pressure ratio control on the branch flow control unit while the processing gas supply unit supplies the processing gas. After the inner pressures of the first and the second processing gas branch line become stable, the control unit switches the pressure ratio control to a fixed pressure control, and then the additional gas supply unit supplies the additional gas.Type: ApplicationFiled: January 30, 2007Publication date: August 2, 2007Applicant: TOKYO ELECTRON LIMITEDInventor: Kenetsu MIZUSAWA
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Publication number: 20070151668Abstract: Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means.Type: ApplicationFiled: December 22, 2006Publication date: July 5, 2007Applicant: TOKYO ELECTRON LIMITEDInventor: KENETSU MIZUSAWA
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Publication number: 20060124169Abstract: A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.Type: ApplicationFiled: December 8, 2005Publication date: June 15, 2006Applicant: Tokyo Electron LimitedInventors: Kenetsu Mizusawa, Keiki Ito, Masahide Itoh
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Publication number: 20050064609Abstract: A semiconductor processing system includes a processing chamber, a gas exhaust unit, a gas supply unit, a flow rate controller, a flow rate measuring unit for inspecting the flow rate controller, and a control unit for controlling the processing system. The flow rate measuring unit contains an inspection vessel, a pressure gauge, and a flow rate calculation unit, and the control unit is configured to purge the inspection vessel before or after flowing the processing gas into thereto. Further, an inspecting method of the flow rate controller in the semiconductor processing system includes the steps of flowing the processing gas to the inspection vessel, detecting an inner pressure of the inspection vessel, obtaining a gas flow rate of the flow rate controller, and performing a purge process on the inspection vessel.Type: ApplicationFiled: October 21, 2004Publication date: March 24, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Hideki Nagaoka, Aya Morokata, Norikazu Sasaki, Kazushige Shimura, Kenetsu Mizusawa, Akira Obi, Masaaki Abe