Abstract: A semiconductor device, including: a semiconductor substrate formed of silicon carbide, components being formed at one surface of the semiconductor substrate; a periphery portion disposed at a pre-specified region of a periphery of the semiconductor substrate, the components not being formed at the periphery portion; and a plurality of trenches or portions of trenches formed at the periphery portion, an interior of each of the trenches being filled with a material with a different coefficient of thermal expansion from the silicon carbide.

Abstract: A semiconductor device, including: a semiconductor substrate formed of silicon carbide, components being formed at one surface of the semiconductor substrate; a periphery portion disposed at a pre-specified region of a periphery of the semiconductor substrate, the components not being formed at the periphery portion; and a plurality of trenches or portions of trenches formed at the periphery portion, an interior of each of the trenches being filled with a material with a different coefficient of thermal expansion from the silicon carbide.

Abstract: The semiconductor device includes a semiconductor substrate of first conductivity type including a cell area and a peripheral area surrounding cell area on a principal surface thereof, a first diffusion layer which is disposed in peripheral area, surrounds the cell area and has a second conductivity type different from the first conductivity type, an electrode which is disposed in the peripheral area, is in contact with the principal surface through an opening provided in an insulating member and is connected to the first diffusion layer, and a second diffusion layer of the first conductivity type which is formed on the principal surface of a region enclosed in the electrode distant from the first diffusion layer when viewed in a direction perpendicular to the principal surface and includes a linear portion having a first width and a curved portion having a portion with a second width greater than the first width.

Abstract: A method of manufacturing a product with skin includes: attaching a preformed base material to a vacuum forming die on a back surface of the base material, disposing a skin material as a material of the skin on a front surface of a base material, and sucking the skin material through the vacuum forming die and the base material to deform a main portion of skin material so as to be in close contact with the front surface of the base material; cutting a surplus portion of the skin material not being in close contact with the front surface of the base material with a trim blade so that a distal end portion remains around the main portion, thereby forming the skin having the distal end portion; and winding the distal end portion of the skin around the back surface of the base material by a winding mechanism.

Abstract: The semiconductor device includes a semiconductor substrate of first conductivity type including a cell area and a peripheral area surrounding cell area on a principal surface thereof, a first diffusion layer which is disposed in peripheral area, surrounds the cell area and has a second conductivity type different from the first conductivity type, an electrode which is disposed in the peripheral area, is in contact with the principal surface through an opening provided in an insulating member and is connected to the first diffusion layer, and a second diffusion layer of the first conductivity type which is formed on the principal surface of a region enclosed in the electrode distant from the first diffusion layer when viewed in a direction perpendicular to the principal surface and includes a linear portion having a first width and a curved portion having a portion with a second width greater than the first width.

Abstract: A method of manufacturing a product with skin includes: attaching a preformed base material to a vacuum forming die on a back surface of the base material, disposing a skin material as a material of the skin on a front surface of a base material, and sucking the skin material through the vacuum forming die and the base material to deform a main portion of skin material so as to be in close contact with the front surface of the base material; cutting a surplus portion of the skin material not being in close contact with the front surface of the base material with a trim blade so that a distal end portion remains around the main portion, thereby forming the skin having the distal end portion; and winding the distal end portion of the skin around the back surface of the base material by a winding mechanism.

Abstract: A suspension conveying device according to the present invention includes screw shafts of two suspension line pulling-up/feeding mechanisms in a conveying traveling body 1. The screw shafts have low-speed drive regions, in which feed pitches for driven bodies are small, and high-speed drive regions, in which feed pitches for the driven bodies are large. The screw shafts are installed so that the low-speed drive regions and the high-speed drive regions are disposed mutually oppositely as viewed from the driven bodies when a conveyed object supporter is at one end of an elevation/lowering stroke, and the conveyed object supporter is tilted in a middle of the elevation/lowering stroke when the screw shafts are driven to undergo forward/reverse rotation at a fixed speed by a motor.

Abstract: An immersion-type surface treatment tank includes a treatment tank body including: a single tank internal space elongated in a plan view, and a nozzle that ejects an electrodeposition paint into the tank internal space. The treatment tank body includes: a first tank inner side surface extending along a longitudinal direction of the tank internal space; a second tank inner side surface facing the first tank inner side surface and extending along the longitudinal direction; and a rectifying plate that is formed halfway in the longitudinal direction and changes a flow direction of the electrodeposition paint such that the electrodeposition paint flowing horizontally along the first tank inner side surface is directed toward the second tank inner side surface. The rectifying plate changes the flow direction of the electrodeposition paint, thereby forming, in the tank internal space, at least two horizontal swirl flows adjacent to each other in the longitudinal direction.

Abstract: A suspension conveying device according to the present invention includes screw shafts of two suspension line pulling-up/feeding mechanisms in a conveying traveling body 1. The screw shafts have low-speed drive regions, in which feed pitches for driven bodies are small, and high-speed drive regions, in which feed pitches for the driven bodies are large. The screw shafts are installed so that the low-speed drive regions and the high-speed drive regions are disposed mutually oppositely as viewed from the driven bodies when a conveyed object supporter is at one end of an elevation/lowering stroke, and the conveyed object supporter is tilted in a middle of the elevation/lowering stroke when the screw shafts are driven to undergo forward/reverse rotation at a fixed speed by a motor.

Abstract: An immersion-type surface treatment tank includes a treatment tank body including: a single tank internal space elongated in a plan view, and a nozzle that ejects an electrodeposition paint into the tank internal space. The treatment tank body includes: a first tank inner side surface extending along a longitudinal direction of the tank internal space; a second tank inner side surface facing the first tank inner side surface and extending along the longitudinal direction; and a rectifying plate that is formed halfway in the longitudinal direction and changes a flow direction of the electrodeposition paint such that the electrodeposition paint flowing horizontally along the first tank inner side surface is directed toward the second tank inner side surface. The rectifying plate changes the flow direction of the electrodeposition paint, thereby forming, in the tank internal space, at least two horizontal swirl flows adjacent to each other in the longitudinal direction.

Abstract: An in-die cover forming method for integrally forming a cover member with a surface of a base member in a die is provided. The die including an upper die half and a lower die half. The upper die halves are movable relative to each other. The base member is set on the lower die half such that its back is opposed to the lower die half. Using position determining mechanisms located between the lower die half and the back of the base member, the position of the surface of the base member in relation to the lower die half in the die moving direction is determined. The cover member is placed between the base member and the upper die half. The cover member is integrated with the surface of the base member by closing the upper die half with respect to the lower die half while pressing the cover member against the base member through vacuuming.

Abstract: A field-effect transistor includes a substrate of a first conductivity type, and a channel diffusion region of a second conductivity type provided in the first conductivity type substrate. The transistor also includes a first conductivity type contact region provided in the second conductivity type channel diffusion region, and an electrode wiring connected to the first conductivity type source contact region and second conductivity type source contact region. A surface insulating film is provided on the second conductivity type channel diffusion region. A plurality of linear gate electrodes are provided on the surface insulating film. The gate electrodes are parallel to each other. The spacing between the gate electrodes is less than the thickness of the surface insulating film.

Abstract: An in-die cover forming method for integrally forming a cover member with a surface of a base member in a die is provided. The die including an upper die half and a lower die half. The upper die halves are movable relative to each other. The base member is set on the lower die half such that its back is opposed to the lower die half. Using position determining mechanisms located between the lower die half and the back of the base member, the position of the surface of the base member in relation to the lower die half in the die moving direction is determined. The cover member is placed between the base member and the upper die half. The cover member is integrated with the surface of the base member by closing the upper die half with respect to the lower die half while pressing the cover member against the base member through vacuuming.

Abstract: A semiconductor device has a semiconductor substrate, a gate insulator, a gate electrode, and a pair of lightly doped regions. The gate insulator is formed on the semiconductor substrate. The gate electrode is formed on the gate insulator and has first bottom faces and second bottom faces. The distance of the second bottom faces from the surface of the semiconductor substrate is different from that of the first bottom faces, and the first bottom faces and the second bottom faces are disposed alternately along a predetermined direction. The pair of lightly doped regions are formed in regions in the semiconductor substrate except for a region underneath the gate electrode.

Abstract: Resist patterns (R11 and R12) are formed such that an opening between both the films is aligned to the position, where the source electrode (7) is formed, while the region on the N+-layer (5), where the drain electrode (8) is formed afterwards, is covered by the resist film (R11). After ohmic electrode material is applied from a direction perpendicular to a semiconductor substrate (1), the resist films (R11 and R12) are removed with the ohmic electrode films (OM11 and OM12). The remaining ohmic electrode film (OM14) functions as the source electrode (7). After the above-described first lift off process, the second lift off process is performed to form a drain electrode (8) on the N+-layer (5).

Abstract: An interior finish member having a door for an air bag includes a main body and a cover. The main body surrounds the periphery of the cover, and the main body and the cover form a continuous surface. The cover covers a folded air bag. The cover includes: a door, which covers the folded air bag. A breakable portion is defined by a recessed periphery of the door and is relatively thin. A hinge connects the door with the main body and provides a pivot around which the door pivots under a force of an expanding air bag. The main body is made of thermoplastic resin, and the cover is made of thermoplastic elastomer. The main body and the cover portion can be integrally formed.

Abstract: A field-effect transistor includes a substrate of a first conductivity type, and a channel diffusion region of a second conductivity type provided in the first conductivity type substrate. The transistor also includes a first conductivity type contact region provided in the second conductivity type channel diffusion region, and an electrode wiring connected to the first conductivity type source contact region and second conductivity type source contact region. A surface insulating film is provided on the second conductivity type channel diffusion region. A plurality of linear gate electrodes are provided on the surface insulating film. The gate electrodes are parallel to each other. The spacing between the gate electrodes is less than the thickness of the surface insulating film.

Abstract: Resist patterns (R11 and R12) are formed such that an opening between both the films is aligned to the position, where the source electrode (7) is formed, while the region on the N+-layer (5), where the drain electrode (8) is formed afterwards, is covered by the resist film (R11). After ohmic electrode material is applied from a direction perpendicular to a semiconductor substrate (1), the resist films (R11 and R12) are removed with the ohmic electrode films (OM11 and OM12). The remaining ohmic electrode film (OM14) functions as the source electrode (7). After the above-described first lift off process, the second lift off process is performed to form a drain electrode (8) on the N+-layer (5).

Abstract: A method for forming tear lines in the rear side of an automobile interior article having a cover portion being developed from which an airbag inflates. When either an automobile interior article body having an integrally molded surface portion or an automobile interior article surface portion is to be molded, the mold is opened after tear line forming projections are moved forward and backward with the mold closed. Thus, the tear lines can be formed at the molding time without any visible extrusion marks of the tear line forming projections on the front surface side (the design face).

Abstract: An automobile interior member which is represented by an instrument panel and to which an air bag device is to be assembled, is constituted by a main body portion and an air bag cover portion, the main body portion and the air bag cover portion being formed in a manner so that the main body portion is primarily molded (injection-molded) out of first thermoplastic resin material, and the air bag cover portion is secondarily molded (injection-molded) so as to be lapped with the main body portion on the back surface side. The second thermoplastic resin is oriented in a direction along a tear line (edges of rotational lid portions) of the lid portions (door portions) in the air bag cover portion so that the air bag cover portion is secondarily molded.