Patents by Inventor Kenichi Higashi

Kenichi Higashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10778128
    Abstract: A power generation system includes a continuously variable transmission, a power generator, a transmission driving device, an output-side speed detector, and electric power load device, and a controller. The electric power load calculation device detects current values and current values of respective phases of three-phase alternating current generated by the power generator, calculates electric power load of the power generator based on the detected values, and executes filtering by attenuating a higher harmonic of a set frequency when calculating the electric power load of the power generator. The controller executes feedback control of calculating and outputting a gear change command to the transmission driving device so an output-side rotational speed detected by the output-side speed detector becomes equal to an output-side target rotational speed corresponding to the set frequency.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: September 15, 2020
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Tatsuhiko Goi, Kenichi Nakashima, Satoshi Otsuki, Kazushige Sugimoto, Masaaki Higashi
  • Patent number: 10742041
    Abstract: A power-on/off command is output to a breaker for switching when a frequency difference between a plurality of electric power supply sources is within a predetermined range and a phase difference between the plurality of electric power supply sources is within a predetermined range, in switching of electric power supply between the plurality of electric power supply sources. A generator drive rotation speed of a transmission device is feedback controlled so that the frequency difference is maintained at a value within the predetermined range and the phase difference is maintained at a value within the predetermined range when the detected frequency difference is within the predetermined range and the detected phase difference is within the predetermined range. A generator rotation speed command is calculated by adding to the rotation speed command of the transmission device an output value obtained by subjecting the detected phase difference to a proportional-integral-control.
    Type: Grant
    Filed: March 7, 2016
    Date of Patent: August 11, 2020
    Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Tatsuhiko Goi, Kenichi Nakashima, Kazushige Sugimoto, Masaaki Higashi
  • Patent number: 10658526
    Abstract: In a photovoltaic device (1), first amorphous semiconductor portions (102n) and second amorphous semiconductor portions (102p) are provided alternately on one of faces of a semiconductor substrate (101). Each first amorphous semiconductor portion (102n) has at least one first amorphous semiconductor strip (1020n), and each second amorphous semiconductor portion (102p) has at least one second amorphous semiconductor strip (1020p). A plurality of first electrodes (103n) are provided spaced apart from each other on each first amorphous semiconductor strip (1020n), and a plurality of second electrodes (103p) are provided spaced apart from each other on each second amorphous semiconductor strip (1020p).
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: May 19, 2020
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Masatomi Harada, Kenichi Higashi, Takeshi Kamikawa, Toshihiko Sakai, Tokuaki Kuniyoshi, Kazuya Tsujino, Liumin Zou
  • Patent number: 10505064
    Abstract: A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic device 10 includes: a semiconductor substrate 1; an intrinsic amorphous semiconductor layer 3 provided on the semiconductor substrate 1; n-type amorphous semiconductor strips 4 containing phosphorus as a dopant; and p-type amorphous semiconductor strips 5 containing boron as a dopant, the n- and p-type amorphous semiconductor strips 4 and 5 being provided alternately on the intrinsic amorphous semiconductor layer 3 as viewed along an in-plane direction. Each n-type amorphous semiconductor strip 4 includes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips 5. Each p-type amorphous semiconductor strip 5 includes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips 4.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: December 10, 2019
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Tokuaki Kuniyoshi, Kenichi Higashi, Takeshi Kamikawa, Masatomi Harada, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou
  • Publication number: 20190348937
    Abstract: A power generation system includes a continuously variable transmission, a power generator, a transmission driving device, an output-side speed detector, and electric power load device, and a controller. The electric power load calculation device detects current values and current values of respective phases of three-phase alternating current generated by the power generator, calculates electric power load of the power generator based on the detected values, and executes filtering by attenuating a higher harmonic of a set frequency when calculating the electric power load of the power generator. The controller executes feedback control of calculating and outputting a gear change command to the transmission driving device so an output-side rotational speed detected by the output-side speed detector becomes equal to an output-side target rotational speed corresponding to the set frequency.
    Type: Application
    Filed: December 27, 2016
    Publication date: November 14, 2019
    Applicant: KAWASAKI JUKOGYO KABUSHIKI KAISHA
    Inventors: Tatsuhiko GOI, Kenichi NAKASHIMA, Satoshi OTSUKI, Kazushige SUGIMOTO, Masaaki HIGASHI
  • Patent number: 10439606
    Abstract: A semiconductor module includes a high-side switching device and a low-side switching device that respectively form an upper arm and a lower arm, freewheeling diodes that are respectively connected to the switching devices in anti-parallel, and a high-side driver circuit and a low-side driver circuit that respectively switch the high-side switching device and the low-side switching device ON and OFF. In the upper arm, an anode electrode of the freewheeling diode and a reference voltage electrode of the high-side driver circuit are directly connected via a first wiring, and the anode electrode of the freewheeling diode is connected to a reference voltage electrode of the high-side switching device via a second wiring having an inductance.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: October 8, 2019
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Kenichi Okayama, Nobuhiro Higashi
  • Patent number: 10411148
    Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: September 10, 2019
    Assignee: SHARP kABUSHIKI KAISHA
    Inventors: Naoki Asano, Takeshi Hieda, Chikao Okamoto, Yuta Matsumoto, Kenichi Higashi, Hiroaki Shigeta
  • Patent number: 10355145
    Abstract: A photovoltaic device (1) includes: an i-type amorphous semiconductor layer (102i) formed in contact with one of the surfaces of a semiconductor substrate (101); p-type amorphous semiconductor strips (102p) spaced apart from each other and provided on the i-type amorphous semiconductor layer (102i); and n-type amorphous semiconductor strips (102n) spaced apart from each other and provided on the i amorphous semiconductor layer (102i), each n-type amorphous semiconductor strip (102n) being adjacent to at least one of the p-type amorphous semiconductor strips (102p) as traced along an in-plane direction of the semiconductor substrate (101). The photovoltaic device (1) further includes electrodes (103) as a protection layer formed in contact with the i-type amorphous semiconductor layer (102) between adjacent p-type amorphous semiconductor strips (102p) and between adjacent n-type amorphous semiconductor strips (102n).
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: July 16, 2019
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Masatomi Harada, Kenichi Higashi, Takeshi Kamikawa, Toshihiko Sakai, Tokuaki Kuniyoshi, Kazuya Tsujino, Liumin Zou
  • Publication number: 20190044018
    Abstract: A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic device 10 includes: a semiconductor substrate 1; an intrinsic amorphous semiconductor layer 3 provided on the semiconductor substrate 1; n-type amorphous semiconductor strips 4 containing phosphorus as a dopant; and p-type amorphous semiconductor strips 5 containing boron as a dopant, the n- and p-type amorphous semiconductor strips 4 and 5 being provided alternately on the intrinsic amorphous semiconductor layer 3 as viewed along an in-plane direction. Each n-type amorphous semiconductor strip 4 includes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips 5. Each p-type amorphous semiconductor strip 5 includes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips 4.
    Type: Application
    Filed: August 30, 2016
    Publication date: February 7, 2019
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Tokuaki KUNIYOSHI, Kenichi HIGASHI, Takeshi KAMIKAWA, Masatomi HARADA, Toshihiko SAKAI, Kazuya TSUJINO, Liumin ZOU
  • Publication number: 20180190840
    Abstract: In a photovoltaic device (1), first amorphous semiconductor portions (102n) and second amorphous semiconductor portions (102p) are provided alternately on one of faces of a semiconductor substrate (101). Each first amorphous semiconductor portion (102n) has at least one first amorphous semiconductor strip (1020n), and each second amorphous semiconductor portion (102p) has at least one second amorphous semiconductor strip (1020p). A plurality of first electrodes (103n) are provided spaced apart from each other on each first amorphous semiconductor strip (1020n), and a plurality of second electrodes (103p) are provided spaced apart from each other on each second amorphous semiconductor strip (1020p).
    Type: Application
    Filed: February 24, 2016
    Publication date: July 5, 2018
    Applicant: Sharp Kabushiki Kaisha
    Inventors: MASATOMI HARADA, KENICHI HIGASHI, TAKESHI KAMIKAWA, TOSHIHIKO SAKAI, TOKUAKI KUNIYOSHI, KAZUYA TSUJINO, LIUMIN ZOU
  • Publication number: 20180138323
    Abstract: A photovoltaic device (1) includes: an i-type amorphous semiconductor layer (102i) formed in contact with one of the surfaces of a semiconductor substrate (101); p-type amorphous semiconductor strips (102p) spaced apart from each other and provided on the i-type amorphous semiconductor layer (102i); and n-type amorphous semiconductor strips (102n) spaced apart from each other and provided on the i amorphous semiconductor layer (102i), each n-type amorphous semiconductor strip (102n) being adjacent to at least one of the p-type amorphous semiconductor strips (102p) as traced along an in-plane direction of the semiconductor substrate (101). The photovoltaic device (1) further includes electrodes (103) as a protection layer formed in contact with the i-type amorphous semiconductor layer (102) between adjacent p-type amorphous semiconductor strips (102) and between adjacent n-type amorphous semiconductor strips (102n).
    Type: Application
    Filed: February 24, 2016
    Publication date: May 17, 2018
    Inventors: MASATOMI HARADA, KENICHI HIGASHI, TAKESHI KAMIKAWA, TOSHIHIKO SAKAI, TOKUAKI KUNIYOSHI, KAZUYA TSUJINO, LIUMIN ZOU
  • Publication number: 20170222080
    Abstract: Provided are a solar cell module, a method of manufacturing the solar cell module, and a photovoltaic power generation system including the solar cell module. The solar cell module includes a solar cell group in which a plurality of solar cells are arranged, and a first heat storage layer that is disposed on a rear surface side of the solar cell group. The first heat storage layer is a layer that contains 80% by weight or greater of a heat storage material including a first latent heat storage material having a phase change temperature of T1. The solar cell module may further include a second heat storage layer, which includes a second latent heat storage material having a phase change temperature T2 different from the phase change temperature T1, on a rear surface side of the first heat storage layer.
    Type: Application
    Filed: June 29, 2015
    Publication date: August 3, 2017
    Inventors: Tetsuya IDE, Kenichi HIGASHI, Naoki KOIDE, Osamu KAWASAKI, Hisayuki UTSUMI
  • Publication number: 20170125622
    Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film 3 placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.
    Type: Application
    Filed: February 12, 2015
    Publication date: May 4, 2017
    Inventors: Naoki ASANO, Takeshi HIEDA, Chikao OKAMOTO, Yuta MATSUMOTO, Kenichi HIGASHI, Hiroaki SHIGETA
  • Patent number: 8409431
    Abstract: Intended is to reduce pressure fluctuations across a filter (14) for filtering a resist liquid. A charging apparatus is provided including a charge liquid tank (2) of resist liquid, a feed pump (10), a charge nozzle (8), a recovery passage (16), a recovery valve (20) disposed in the recovery passage (16), the filter (14), and a control device (24) for controlling the servomotors to adjust the openings of the charge valve (12) and the recovery valve (20) so that the pressures on the upstream side and the downstream side of the filter (14) may not fluctuate.
    Type: Grant
    Filed: September 25, 2008
    Date of Patent: April 2, 2013
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Koji Nakagawa, Masaaki Muroi, Shinichi Torigoe, Fumihiro Nagaike, Ryohei Nakamura, Kenichi Higashi, Tsuyoshi Gouda
  • Publication number: 20100236998
    Abstract: Intended is to reduce pressure fluctuations across a filter (14) for filtering a resist liquid.
    Type: Application
    Filed: September 25, 2008
    Publication date: September 23, 2010
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Koji Nakagawa, Masaaki Muroi, Shinichi Torigoe, Fumihiro Nagaike, Ryohei Nakamura, Kenichi Higashi, Tsuyoshi Gouda
  • Publication number: 20100187723
    Abstract: A method for producing a multilayer molded article is proposed, whereby a thin cover layer can be formed widely on a substrate layer. The method has a first step of placing a substrate in a cavity formed between a pair of mold halves, and a second step of supplying a second thermoplastic resin material being in a molten state, at an injection rate of 200 cm3/sec or more to a clearance formed between the substrate and a cavity surface facing the substrate, wherein in the second step, the clamping force of the pair of mold halves is set so that the cavity volume will increase due to pressure increase in the cavity accompanying the supply of the second thermoplastic resin material. The method is useful for producing large-sized plastic components with excellent appearance quality.
    Type: Application
    Filed: January 27, 2010
    Publication date: July 29, 2010
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Taro Miyazawa, Kenichi Higashi
  • Patent number: 7748521
    Abstract: A conveyer belt abrasion detecting apparatus which can automatically detect a conveyer belt abrasion quantity easily and accurately during operation. A plurality of magnet sheets (M1-M5) magnetized in a thickness direction are arranged so that polarities on the surface are in the same direction and are embedded deeper stepwise in a longitudinal direction of a belt main body (2). A magnetic sensor (4) for detecting changes of the magnetic forces of the magnet sheets (M1-M5) is arranged at a position where the magnet sheets (M1-M5) pass through.
    Type: Grant
    Filed: April 12, 2006
    Date of Patent: July 6, 2010
    Assignee: Bridgestone Corporation
    Inventors: Satoshi Aizawa, Kenichi Higashi, Yukinobu Nishikita
  • Publication number: 20090145730
    Abstract: A conveyer belt abrasion detecting apparatus which can automatically detect a conveyer belt abrasion quantity easily and accurately during operation. A plurality of magnet sheets (M1-M5) magnetized in a thickness direction are arranged so that polarities on the surface are in the same direction and are embedded deeper stepwise in a longitudinal direction of a belt main body (2). A magnetic sensor (4) for detecting changes of the magnetic forces of the magnet sheets (M1-M5) is arranged at a position where the magnet sheets (M1-M5) pass through.
    Type: Application
    Filed: April 12, 2006
    Publication date: June 11, 2009
    Applicant: BRIDGESTONE CORPORATION
    Inventors: Satoshi Aizawa, Kenichi Higashi, Yukinobu Nishikita
  • Publication number: 20090038911
    Abstract: To provide a pipe conveyer in which a twist or depression of a rounded conveyer belt is simply and efficiently detected by effectively using permanent magnets and the closability of the conveyer belt is improved. [MEANS FOR SOLVING PROBLEMS] A conveyer belt (3) is rounded into a pipe, and both side edges (3a, 3b) of the conveyer belt (3) are laid on one the other. On both opposed surfaces of the edges, permanent magnets (6, 7) attaching each other are provided. A fixed body through which the rounded conveyer belt (3) passes is provided, and a plurality of magnetic sensors (8) are so circumferentially arranged on the fixed body as to surround the conveyer belt (3) and to detect the magnetic force strengths when the permanent magnets (6, 7) pass by the fixed body. Twist detecting means (11) for comparing the detected magnetic force strengths and detecting a twist of the conveyer belt (3) from the position of the magnetic sensor (8) which has detected the peak value (P1) is provided.
    Type: Application
    Filed: September 25, 2006
    Publication date: February 12, 2009
    Applicant: BRIDGESTONE CORPORATION
    Inventors: Satoshi Aizawa, Kenichi Higashi, Takashi Yokoi
  • Patent number: 7347317
    Abstract: Methods and devices for measuring elongation, wear, and internal temperature of a conveyor belt to catch signs of conveyor belt failure such as breakage by detecting a magnetic field from a magnetic body by using a magnesium sensor, as well as a rubber magnet sheet as a magnetic body and a method of producing the sheet, the rubber magnet sheet being able to be used while it is embedded in the conveyor belt. To measure elongation of a running conveyor belt (11), a magnetic field of a magnetic body (2) embedded in the belt (11) is detected by a magnetism sensor (3) fixed to the earth, and elongation of the belt (11) is calculated from temporal variation of the detected magnetic field.
    Type: Grant
    Filed: July 1, 2004
    Date of Patent: March 25, 2008
    Assignee: Bridgestone Corporation
    Inventors: Satoshi Aizawa, Takahisa Shizuku, Masami Kikuchi, Kenichi Higashi