Patents by Inventor Kenichi Higashi

Kenichi Higashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10658526
    Abstract: In a photovoltaic device (1), first amorphous semiconductor portions (102n) and second amorphous semiconductor portions (102p) are provided alternately on one of faces of a semiconductor substrate (101). Each first amorphous semiconductor portion (102n) has at least one first amorphous semiconductor strip (1020n), and each second amorphous semiconductor portion (102p) has at least one second amorphous semiconductor strip (1020p). A plurality of first electrodes (103n) are provided spaced apart from each other on each first amorphous semiconductor strip (1020n), and a plurality of second electrodes (103p) are provided spaced apart from each other on each second amorphous semiconductor strip (1020p).
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: May 19, 2020
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Masatomi Harada, Kenichi Higashi, Takeshi Kamikawa, Toshihiko Sakai, Tokuaki Kuniyoshi, Kazuya Tsujino, Liumin Zou
  • Patent number: 10505064
    Abstract: A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic device 10 includes: a semiconductor substrate 1; an intrinsic amorphous semiconductor layer 3 provided on the semiconductor substrate 1; n-type amorphous semiconductor strips 4 containing phosphorus as a dopant; and p-type amorphous semiconductor strips 5 containing boron as a dopant, the n- and p-type amorphous semiconductor strips 4 and 5 being provided alternately on the intrinsic amorphous semiconductor layer 3 as viewed along an in-plane direction. Each n-type amorphous semiconductor strip 4 includes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips 5. Each p-type amorphous semiconductor strip 5 includes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips 4.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: December 10, 2019
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Tokuaki Kuniyoshi, Kenichi Higashi, Takeshi Kamikawa, Masatomi Harada, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou
  • Patent number: 10411148
    Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: September 10, 2019
    Assignee: SHARP kABUSHIKI KAISHA
    Inventors: Naoki Asano, Takeshi Hieda, Chikao Okamoto, Yuta Matsumoto, Kenichi Higashi, Hiroaki Shigeta
  • Patent number: 10355145
    Abstract: A photovoltaic device (1) includes: an i-type amorphous semiconductor layer (102i) formed in contact with one of the surfaces of a semiconductor substrate (101); p-type amorphous semiconductor strips (102p) spaced apart from each other and provided on the i-type amorphous semiconductor layer (102i); and n-type amorphous semiconductor strips (102n) spaced apart from each other and provided on the i amorphous semiconductor layer (102i), each n-type amorphous semiconductor strip (102n) being adjacent to at least one of the p-type amorphous semiconductor strips (102p) as traced along an in-plane direction of the semiconductor substrate (101). The photovoltaic device (1) further includes electrodes (103) as a protection layer formed in contact with the i-type amorphous semiconductor layer (102) between adjacent p-type amorphous semiconductor strips (102p) and between adjacent n-type amorphous semiconductor strips (102n).
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: July 16, 2019
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Masatomi Harada, Kenichi Higashi, Takeshi Kamikawa, Toshihiko Sakai, Tokuaki Kuniyoshi, Kazuya Tsujino, Liumin Zou
  • Publication number: 20190044018
    Abstract: A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic device 10 includes: a semiconductor substrate 1; an intrinsic amorphous semiconductor layer 3 provided on the semiconductor substrate 1; n-type amorphous semiconductor strips 4 containing phosphorus as a dopant; and p-type amorphous semiconductor strips 5 containing boron as a dopant, the n- and p-type amorphous semiconductor strips 4 and 5 being provided alternately on the intrinsic amorphous semiconductor layer 3 as viewed along an in-plane direction. Each n-type amorphous semiconductor strip 4 includes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips 5. Each p-type amorphous semiconductor strip 5 includes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips 4.
    Type: Application
    Filed: August 30, 2016
    Publication date: February 7, 2019
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Tokuaki KUNIYOSHI, Kenichi HIGASHI, Takeshi KAMIKAWA, Masatomi HARADA, Toshihiko SAKAI, Kazuya TSUJINO, Liumin ZOU
  • Publication number: 20180190840
    Abstract: In a photovoltaic device (1), first amorphous semiconductor portions (102n) and second amorphous semiconductor portions (102p) are provided alternately on one of faces of a semiconductor substrate (101). Each first amorphous semiconductor portion (102n) has at least one first amorphous semiconductor strip (1020n), and each second amorphous semiconductor portion (102p) has at least one second amorphous semiconductor strip (1020p). A plurality of first electrodes (103n) are provided spaced apart from each other on each first amorphous semiconductor strip (1020n), and a plurality of second electrodes (103p) are provided spaced apart from each other on each second amorphous semiconductor strip (1020p).
    Type: Application
    Filed: February 24, 2016
    Publication date: July 5, 2018
    Applicant: Sharp Kabushiki Kaisha
    Inventors: MASATOMI HARADA, KENICHI HIGASHI, TAKESHI KAMIKAWA, TOSHIHIKO SAKAI, TOKUAKI KUNIYOSHI, KAZUYA TSUJINO, LIUMIN ZOU
  • Publication number: 20180138323
    Abstract: A photovoltaic device (1) includes: an i-type amorphous semiconductor layer (102i) formed in contact with one of the surfaces of a semiconductor substrate (101); p-type amorphous semiconductor strips (102p) spaced apart from each other and provided on the i-type amorphous semiconductor layer (102i); and n-type amorphous semiconductor strips (102n) spaced apart from each other and provided on the i amorphous semiconductor layer (102i), each n-type amorphous semiconductor strip (102n) being adjacent to at least one of the p-type amorphous semiconductor strips (102p) as traced along an in-plane direction of the semiconductor substrate (101). The photovoltaic device (1) further includes electrodes (103) as a protection layer formed in contact with the i-type amorphous semiconductor layer (102) between adjacent p-type amorphous semiconductor strips (102) and between adjacent n-type amorphous semiconductor strips (102n).
    Type: Application
    Filed: February 24, 2016
    Publication date: May 17, 2018
    Inventors: MASATOMI HARADA, KENICHI HIGASHI, TAKESHI KAMIKAWA, TOSHIHIKO SAKAI, TOKUAKI KUNIYOSHI, KAZUYA TSUJINO, LIUMIN ZOU
  • Publication number: 20170222080
    Abstract: Provided are a solar cell module, a method of manufacturing the solar cell module, and a photovoltaic power generation system including the solar cell module. The solar cell module includes a solar cell group in which a plurality of solar cells are arranged, and a first heat storage layer that is disposed on a rear surface side of the solar cell group. The first heat storage layer is a layer that contains 80% by weight or greater of a heat storage material including a first latent heat storage material having a phase change temperature of T1. The solar cell module may further include a second heat storage layer, which includes a second latent heat storage material having a phase change temperature T2 different from the phase change temperature T1, on a rear surface side of the first heat storage layer.
    Type: Application
    Filed: June 29, 2015
    Publication date: August 3, 2017
    Inventors: Tetsuya IDE, Kenichi HIGASHI, Naoki KOIDE, Osamu KAWASAKI, Hisayuki UTSUMI
  • Publication number: 20170125622
    Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film 3 placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.
    Type: Application
    Filed: February 12, 2015
    Publication date: May 4, 2017
    Inventors: Naoki ASANO, Takeshi HIEDA, Chikao OKAMOTO, Yuta MATSUMOTO, Kenichi HIGASHI, Hiroaki SHIGETA
  • Patent number: 8409431
    Abstract: Intended is to reduce pressure fluctuations across a filter (14) for filtering a resist liquid. A charging apparatus is provided including a charge liquid tank (2) of resist liquid, a feed pump (10), a charge nozzle (8), a recovery passage (16), a recovery valve (20) disposed in the recovery passage (16), the filter (14), and a control device (24) for controlling the servomotors to adjust the openings of the charge valve (12) and the recovery valve (20) so that the pressures on the upstream side and the downstream side of the filter (14) may not fluctuate.
    Type: Grant
    Filed: September 25, 2008
    Date of Patent: April 2, 2013
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Koji Nakagawa, Masaaki Muroi, Shinichi Torigoe, Fumihiro Nagaike, Ryohei Nakamura, Kenichi Higashi, Tsuyoshi Gouda
  • Publication number: 20100236998
    Abstract: Intended is to reduce pressure fluctuations across a filter (14) for filtering a resist liquid.
    Type: Application
    Filed: September 25, 2008
    Publication date: September 23, 2010
    Applicant: TOKYO OHKA KOGYO CO., LTD.
    Inventors: Koji Nakagawa, Masaaki Muroi, Shinichi Torigoe, Fumihiro Nagaike, Ryohei Nakamura, Kenichi Higashi, Tsuyoshi Gouda
  • Publication number: 20100187723
    Abstract: A method for producing a multilayer molded article is proposed, whereby a thin cover layer can be formed widely on a substrate layer. The method has a first step of placing a substrate in a cavity formed between a pair of mold halves, and a second step of supplying a second thermoplastic resin material being in a molten state, at an injection rate of 200 cm3/sec or more to a clearance formed between the substrate and a cavity surface facing the substrate, wherein in the second step, the clamping force of the pair of mold halves is set so that the cavity volume will increase due to pressure increase in the cavity accompanying the supply of the second thermoplastic resin material. The method is useful for producing large-sized plastic components with excellent appearance quality.
    Type: Application
    Filed: January 27, 2010
    Publication date: July 29, 2010
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Taro Miyazawa, Kenichi Higashi
  • Patent number: 7748521
    Abstract: A conveyer belt abrasion detecting apparatus which can automatically detect a conveyer belt abrasion quantity easily and accurately during operation. A plurality of magnet sheets (M1-M5) magnetized in a thickness direction are arranged so that polarities on the surface are in the same direction and are embedded deeper stepwise in a longitudinal direction of a belt main body (2). A magnetic sensor (4) for detecting changes of the magnetic forces of the magnet sheets (M1-M5) is arranged at a position where the magnet sheets (M1-M5) pass through.
    Type: Grant
    Filed: April 12, 2006
    Date of Patent: July 6, 2010
    Assignee: Bridgestone Corporation
    Inventors: Satoshi Aizawa, Kenichi Higashi, Yukinobu Nishikita
  • Publication number: 20090145730
    Abstract: A conveyer belt abrasion detecting apparatus which can automatically detect a conveyer belt abrasion quantity easily and accurately during operation. A plurality of magnet sheets (M1-M5) magnetized in a thickness direction are arranged so that polarities on the surface are in the same direction and are embedded deeper stepwise in a longitudinal direction of a belt main body (2). A magnetic sensor (4) for detecting changes of the magnetic forces of the magnet sheets (M1-M5) is arranged at a position where the magnet sheets (M1-M5) pass through.
    Type: Application
    Filed: April 12, 2006
    Publication date: June 11, 2009
    Applicant: BRIDGESTONE CORPORATION
    Inventors: Satoshi Aizawa, Kenichi Higashi, Yukinobu Nishikita
  • Publication number: 20090038911
    Abstract: To provide a pipe conveyer in which a twist or depression of a rounded conveyer belt is simply and efficiently detected by effectively using permanent magnets and the closability of the conveyer belt is improved. [MEANS FOR SOLVING PROBLEMS] A conveyer belt (3) is rounded into a pipe, and both side edges (3a, 3b) of the conveyer belt (3) are laid on one the other. On both opposed surfaces of the edges, permanent magnets (6, 7) attaching each other are provided. A fixed body through which the rounded conveyer belt (3) passes is provided, and a plurality of magnetic sensors (8) are so circumferentially arranged on the fixed body as to surround the conveyer belt (3) and to detect the magnetic force strengths when the permanent magnets (6, 7) pass by the fixed body. Twist detecting means (11) for comparing the detected magnetic force strengths and detecting a twist of the conveyer belt (3) from the position of the magnetic sensor (8) which has detected the peak value (P1) is provided.
    Type: Application
    Filed: September 25, 2006
    Publication date: February 12, 2009
    Applicant: BRIDGESTONE CORPORATION
    Inventors: Satoshi Aizawa, Kenichi Higashi, Takashi Yokoi
  • Patent number: 7347317
    Abstract: Methods and devices for measuring elongation, wear, and internal temperature of a conveyor belt to catch signs of conveyor belt failure such as breakage by detecting a magnetic field from a magnetic body by using a magnesium sensor, as well as a rubber magnet sheet as a magnetic body and a method of producing the sheet, the rubber magnet sheet being able to be used while it is embedded in the conveyor belt. To measure elongation of a running conveyor belt (11), a magnetic field of a magnetic body (2) embedded in the belt (11) is detected by a magnetism sensor (3) fixed to the earth, and elongation of the belt (11) is calculated from temporal variation of the detected magnetic field.
    Type: Grant
    Filed: July 1, 2004
    Date of Patent: March 25, 2008
    Assignee: Bridgestone Corporation
    Inventors: Satoshi Aizawa, Takahisa Shizuku, Masami Kikuchi, Kenichi Higashi
  • Publication number: 20070276083
    Abstract: A resin composition containing (A) 100 parts by weight of a thermoplastic resin, (B) 1 to 70 parts by weight of a fibrous material having an average fiber length of 0.1 to 20 mm, and (C) 0.1 to 10 parts by weight of a luster material, which provides a molded article with good metallic appearance.
    Type: Application
    Filed: May 15, 2007
    Publication date: November 29, 2007
    Applicants: Sumitomo Chemical Company, Limited, Uchihamakasei Corp., Sumika Color Co., Ltd.
    Inventors: Kenichi HIGASHI, Mitsuyoshi Shimano
  • Publication number: 20060219528
    Abstract: Methods and devices for measuring elongation, wear, and internal temperature of a conveyor belt to catch signs of conveyor belt failure such as breakage by detecting a magnetic field from a magnetic body by using a magnesium sensor, as well as a rubber magnet sheet as a magnetic body and a method of producing the sheet, the rubber magnet sheet being able to be used while it is embedded in the conveyor belt. To measure elongation of a running conveyor belt (11), a magnetic field of a magnetic body (2) embedded in the belt (11) is detected by a magnetism sensor (3) fixed to the earth, and elongation of the belt (11) is calculated from temporal variation of the detected magnetic field.
    Type: Application
    Filed: July 1, 2004
    Publication date: October 5, 2006
    Applicant: BRIDGESTONE CORPORATION
    Inventors: Satoshi Aizawa, Takahisa Shizuku, Masami Kikuchi, Kenichi Higashi
  • Publication number: 20050209385
    Abstract: Disclosed is an electrically conductive composite including (A) electrically conductive fibers, (B) fibrous or rod-shaped low-melting metal which has a melting point lower than that of component (A) and is free of lead, and (C) a thermoplastic resin, the electrically conductive composite including a composite fiber bundle containing component (A) and component (B), the composite fiber bundle being covered with component (C), wherein in the electrically conductive composite, the ratios of the weights of components (A), (B) and (C) to the combined weight of components (A), (B) and (C) are 50-95% by weight for component (A), 4-40% by weight for component (B) and 1-20% by weight for component (C), wherein in the electrically conductive composite, the weight ratio of component (B) to component (A) is 0.31-0.8, and wherein in the composite fiber bundle, component (B) is enclosed in a bundle of component (A).
    Type: Application
    Filed: March 18, 2005
    Publication date: September 22, 2005
    Applicant: Sumitomo Chemical Company, Limited
    Inventors: Kenichi Higashi, Takashi Fujimoto, Yuji Ikezawa
  • Patent number: 6921931
    Abstract: A the present invention provides an electrostatic discharge protection element to be used in a semiconductor integrated circuit providing MOSFET, comprising a thyristor and a trigger diode for triggering the thyristor into an ON-state, wherein the trigger diode provides an n-type cathode high concentration impurity region, a p-type anode high concentration impurity region and a gate formed between the two high concentration impurity regions, the gate being composed of the same material as that of a gate of MOSFET forming the semiconductor integrated circuit, and the thyristor provided with a p-type high concentration impurity region that forms a cathode and an n-type high concentration impurity region that forms an anode, and the p-type high concentration impurity region provides in a p well and connected to a resistor and/or the n-type high concentration impurity region provided in an n well and connected to a resistor.
    Type: Grant
    Filed: June 11, 2003
    Date of Patent: July 26, 2005
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kenichi Higashi, Alberto O. Adan