Patents by Inventor Kenichi Hotehama

Kenichi Hotehama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10644310
    Abstract: A negative electrode material for a non-aqueous electrolyte secondary battery includes a plurality of composite particles. Each of the plurality of composite particles includes an inorganic particle and a carbonaceous material layer that covers the inorganic particle. The carbonaceous material layer includes a first region having a porosity of 4.7% or more and 34.8% or less, the first region being a region extending from the surface of the inorganic particle to the surface of an imaginary sphere that is centered at the center of the inorganic particle and has a radius of 3r, where r is a radius of the inorganic particle.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: May 5, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Daisuke Katou, Kenichi Hotehama
  • Patent number: 10483594
    Abstract: A positive electrode plate (11) includes a current collector (30) and a mixture layer (31) disposed on the current collector (30). The mixture layer (31) has a thin portion (32) with a thickness of less than 200 ?m disposed on an inner coil half of the current collector (30) and a thick portion (33) having a larger thickness than the thin portion (32), the thick portion (33) having a yield loop height H measured by a stiffness test of 6 mm<H<15 mm.
    Type: Grant
    Filed: September 29, 2015
    Date of Patent: November 19, 2019
    Assignees: PANASONIC CORPORATION, SANYO Electric Co., Ltd.
    Inventors: Hiroshi Kawada, Motoharu Saito, Kenichi Hotehama, Yoshinori Aoki
  • Patent number: 10424785
    Abstract: A negative electrode material for a non-aqueous electrolyte secondary battery includes a plurality of composite particles. Each of the plurality of composite particles includes an inorganic particle, one or more covering layers, each of which is in contact with a surface of the inorganic particle, and a carbonaceous material layer that covers the inorganic particle and has voids. The carbonaceous material layer includes a first region having a porosity of 4.3% or more and 10.0% or less, the first region being a region extending from the surface of the inorganic particle to the surface of an imaginary sphere that is centered at the center of the inorganic particle and has a radius of 3r, where r is a radius of the inorganic particle. Each of the voids is separated by one of the one or more covering layers from the surface of the inorganic particle.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: September 24, 2019
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Daisuke Katou, Kenichi Hotehama, Junko Matsushita
  • Publication number: 20190221835
    Abstract: Object: To provide a battery negative electrode material exhibiting both a merit of high specific capacity obtained by using Si, and a merit of high cycle durability obtained by using a non-graphitizable carbon material. Resolution Means: A negative electrode material (1) of a battery of the present invention includes silicon material areas (10) made of a silicon material, and a carbon material area (20) made of a carbon material. The carbon material area (20) is formed in a surrounding area of the silicon material area (10), separated by a cavity (30) at least at a portion. In addition, an (002) average interlayer spacing d002 of the carbon material area (20) determined by powder X-ray diffraction is from 0.365 nm to 0.390 nm.
    Type: Application
    Filed: January 11, 2019
    Publication date: July 18, 2019
    Inventors: Makoto IMAJI, Yukitaro SAKAKIBARA, Shota KOBAYASHI, Kenichi HOTEHAMA, Daisuke KATOU, Ryohei MIYAMAE
  • Publication number: 20180013173
    Abstract: A positive electrode plate (11) includes a current collector (30) and a mixture layer (31) disposed on the current collector (30). The mixture layer (31) has a thin portion (32) with a thickness of less than 200 ?m disposed on an inner coil half of the current collector (30) and a thick portion (33) having a larger thickness than the thin portion (32), the thick portion (33) having a yield loop height H measured by a stiffness test of 6 mm<H<15 mm.
    Type: Application
    Filed: September 29, 2015
    Publication date: January 11, 2018
    Applicants: Panasonic Corporation, Sanyo Electric Co., Ltd.
    Inventors: Hiroshi Kawada, Motoharu Saito, Kenichi Hotehama, Yoshinori Aoki
  • Publication number: 20170373308
    Abstract: A negative electrode material for a non-aqueous electrolyte secondary battery includes a plurality of composite particles. Each of the plurality of composite particles includes an inorganic particle and a carbonaceous material layer that covers the inorganic particle. The carbonaceous material layer includes a first region having a porosity of 4.7% or more and 34.8% or less, the first region being a region extending from the surface of the inorganic particle to the surface of an imaginary sphere that is centered at the center of the inorganic particle and has a radius of 3r, where r is a radius of the inorganic particle.
    Type: Application
    Filed: June 15, 2017
    Publication date: December 28, 2017
    Inventors: DAISUKE KATOU, KENICHI HOTEHAMA
  • Publication number: 20170373307
    Abstract: A negative electrode material for a non-aqueous electrolyte secondary battery includes a plurality of composite particles. Each of the plurality of composite particles includes an inorganic particle, one or more covering layers, each of which is in contact with a surface of the inorganic particle, and a carbonaceous material layer that covers the inorganic particle and has voids. The carbonaceous material layer includes a first region having a porosity of 4.3% or more and 10.0% or less, the first region being a region extending from the surface of the inorganic particle to the surface of an imaginary sphere that is centered at the center of the inorganic particle and has a radius of 3r, where r is a radius of the inorganic particle. Each of the voids is separated by one of the one or more covering layers from the surface of the inorganic particle.
    Type: Application
    Filed: June 15, 2017
    Publication date: December 28, 2017
    Inventors: DAISUKE KATOU, KENICHI HOTEHAMA, JUNKO MATSUSHITA
  • Patent number: 8975626
    Abstract: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.
    Type: Grant
    Filed: November 13, 2009
    Date of Patent: March 10, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Takeshi Suzuki, Kenichi Hotehama, Koichi Hirano, Seiichi Nakatani
  • Patent number: 8895373
    Abstract: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: November 25, 2014
    Assignee: Panasonic Corporation
    Inventors: Takeshi Suzuki, Kenichi Hotehama, Seiichi Nakatani, Koichi Hirano, Tatsuo Ogawa
  • Patent number: 8887383
    Abstract: An electrode structure 100 on which a solder bump is placed includes an electrode pattern 50 made of an electrode-constituting material selected from the group consisting of Cu, Al, Cr, and Ti, a Ni layer 52 formed on a part of the electrode pattern 50, a Pd layer 54 formed on at least a part of a region other than the part of the electrode pattern 50, and an Au layer 56 formed on the Ni layer 52 and the Pd layer 54.
    Type: Grant
    Filed: November 27, 2007
    Date of Patent: November 18, 2014
    Assignee: Panasonic Corporation
    Inventors: Yasushi Taniguchi, Seiichi Nakatani, Takashi Kitae, Seiji Karashima, Kenichi Hotehama
  • Publication number: 20140038366
    Abstract: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.
    Type: Application
    Filed: October 7, 2013
    Publication date: February 6, 2014
    Applicant: Panasonic Corporation
    Inventors: Takeshi SUZUKI, Kenichi HOTEHAMA, Seiichi NAKATANI, Koichi HIRANO, Tatsuo OGAWA
  • Patent number: 8581247
    Abstract: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.
    Type: Grant
    Filed: February 2, 2010
    Date of Patent: November 12, 2013
    Assignee: Panasonic Corporation
    Inventors: Takeshi Suzuki, Kenichi Hotehama, Seiichi Nakatani, Koichi Hirano, Tatsuo Ogawa
  • Patent number: 8297488
    Abstract: A method for forming bumps 19 on electrodes 32 of a wiring board 31 includes the steps of: (a) supplying a fluid 14 containing conductive particles 16 and a gas bubble generating agent onto a first region 17 including the electrodes 32 on the wiring board 31; (b) disposing a substrate 40 having a wall surface 45 formed near the electrodes 32 for forming a meniscus 55 of the fluid 14, so that the substrate 40 faces the wiring board 31; and (c) heating the fluid 14 to generate gas bubbles 30 from the gas bubble generating agent contained in the fluid 14.
    Type: Grant
    Filed: February 22, 2007
    Date of Patent: October 30, 2012
    Assignee: Panasonic Corporation
    Inventors: Seiji Karashima, Yasushi Taniguchi, Seiichi Nakatani, Kenichi Hotehama, Takashi Kitae, Susumu Sawada
  • Publication number: 20120001173
    Abstract: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprising a support layer, a semiconductor structure portion formed on the support layer, and a resin film formed on the semiconductor structure portion. The resin film comprises an opening formed by a laser irradiation therein, and also an electroconductive member which is in contact with the surface of the semiconductor structure portion is disposed within the opening of the resin film.
    Type: Application
    Filed: February 2, 2010
    Publication date: January 5, 2012
    Inventors: Takeshi Suzuki, Kenichi Hotehama, Seiichi Nakatani, Koichi Hirano, Tatsuo Ogawa
  • Publication number: 20110042677
    Abstract: There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.
    Type: Application
    Filed: November 13, 2009
    Publication date: February 24, 2011
    Inventors: Takeshi Suzuki, Kenichi Hotehama, Koichi Hirano, Seiichi Nakatani
  • Publication number: 20100044091
    Abstract: An electrode structure 100 on which a solder bump is placed includes an electrode pattern 50 made of an electrode-constituting material selected from the group consisting of Cu, Al, Cr, and Ti, a Ni layer 52 formed on a part of the electrode pattern 50, a Pd layer 54 formed on at least a part of a region other than the part of the electrode pattern 50, and an Au layer 56 formed on the Ni layer 52 and the Pd layer 54.
    Type: Application
    Filed: November 27, 2007
    Publication date: February 25, 2010
    Applicant: PANASONIC CORPORATION
    Inventors: Yasushi Taniguchi, Seiichi Nakatani, Takashi Kitae, Seiji Karashima, Kenichi Hotehama
  • Publication number: 20090078746
    Abstract: A method for forming bumps 19 on electrodes 32 of a wiring board 31 includes the steps of: (a) supplying a fluid 14 containing conductive particles 16 and a gas bubble generating agent onto a first region 17 including the electrodes 32 on the wiring board 31; (b) disposing a substrate 40 having a wall surface 45 formed near the electrodes 32 for forming a meniscus 55 of the fluid 14, so that the substrate 40 faces the wiring board 31; and (c) heating the fluid 14 to generate gas bubbles 30 from the gas bubble generating agent contained in the fluid 14.
    Type: Application
    Filed: February 22, 2007
    Publication date: March 26, 2009
    Inventors: Seiji Karashima, Yasushi Taniguchi, Seiichi Nakatani, Kenichi Hotehama, Takashi Kitae, Susumu Sawada
  • Publication number: 20090008776
    Abstract: In an electronic component mounted body, an electrode of a first electronic component and an electrode of a second electronic component are electrically connected by a solder connecter, and the solder connecter contains solder and insulation filler. Alternatively, a solder bump is formed on the electrode of the electronic component, and the solder bump includes the insulation filler.
    Type: Application
    Filed: February 23, 2007
    Publication date: January 8, 2009
    Inventors: Takashi Kitae, Seiichi Nakatani, Seiji Karashima, Susumu Sawada, Kenichi Hotehama