Patents by Inventor Kenichi Kawakami

Kenichi Kawakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030179004
    Abstract: A judgment is made of an abnormal condition of a motor due to an influence of a disturbance voltage without addition of hardware by estimating the disturbance voltage on the basis of a target voltage and an actual current of the motor.
    Type: Application
    Filed: March 5, 2003
    Publication date: September 25, 2003
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kouji Fukusumi, Masahiko Kurishige, Noriyuki Inoue, Seiji Sakanishi, Kenichi Kawakami, Takayuki Kifuku
  • Publication number: 20030142203
    Abstract: The present invention provides an omnidirectional visual system for creating perspective projection image data for display by processing image data transmitted by an omnidirectional camera using a hyperboloidal mirror, the system comprising a coordinate rotation processing section for rotating three-dimensional coordinates, which indicate each point of the perspective projection image data, by an angle of inclination of an optical axis of the hyperboloidal mirror along a direction opposite to a direction of the inclination of the optical axis of the hyperboloidal mirror with respect to a vertical axis, thereby obtaining new three-dimensional coordinates.
    Type: Application
    Filed: January 29, 2003
    Publication date: July 31, 2003
    Inventors: Kenichi Kawakami, Kiyoshi Kumata, Kohichi Nakano
  • Patent number: 6573516
    Abstract: Disclosed are an electron-beam lithography method and system having precision in exposure improved by correcting a beam drift even within the same column of chips, and an electron-beam lithography system having the frequency of correcting a beam drift minimized without causing degradation of precision. In the electron-beam lithography method and electron-beam lithography system, a beam drift is measured frequently. When a beam drift is measured during exposure of each column of chips, a positional deviation is not corrected at the time but is corrected, step by step, while a plurality of stripes is defined. It is thus prevented that a misalignment between adjoining stripes gets larger. Moreover, a beam drift is measured a plurality of times in order to measure a variation in beam drift. If a beam drift is small, a measurement interval is extended. If a beam drift is large, the measurement interval is shortened.
    Type: Grant
    Filed: October 21, 1999
    Date of Patent: June 3, 2003
    Assignee: Advantest Corporation
    Inventor: Kenichi Kawakami
  • Patent number: 6546544
    Abstract: A method of producing mask data for partial one-shot transfer (block) exposure suitable for fabrication of an integrated circuit such as a system LSI in small numbers, in many models and with a short turnaround time (TAT) is disclosed, in which the ratio of the block mask fabrication cost to the total production cost and TAT are further reduced. In the partial one-shot transfer exposure method, at least a part of the pattern of the integrated circuit designed by at least partially combining a plurality of basic elements is passed through one of a plurality of block patterns of the block mask, and the radiation of the pattern shaped beams are combined for exposure.
    Type: Grant
    Filed: November 1, 2000
    Date of Patent: April 8, 2003
    Assignee: Advantest Corporation
    Inventor: Kenichi Kawakami
  • Publication number: 20020181803
    Abstract: A perspective projection image creation system of the present invention includes: an optical system including a hyperboloidal mirror; an imaging section receiving light so as to create input image data; an image transformation section transforming input image data obtained by the imaging section into image data of a perspective projection; a scale model creation section transforming image data for an object in an object plane into image data for a scale model of the object such that a size of the scale model of the object corresponds to that of the object in a perspective projection image; an image combining section creating combined image data created by combining the perspective projection image data and the image data for the scale model: and a display section displaying the combined image data.
    Type: Application
    Filed: May 9, 2002
    Publication date: December 5, 2002
    Inventors: Kenichi Kawakami, Kiyoshi Kumata
  • Publication number: 20020141636
    Abstract: An imaging system of the present invention includes: a reflecting mirror having a geometry of one of two sheets of a two-sheeted hyperboloid; and an imaging section which includes an imaging device for receiving light concentrated by a lens having a center located in any position opposing the reflecting mirror on a rotation axis of the reflecting mirror, wherein the imaging system includes a correction section for performing coordinate transformation on captured image data obtained by capturing an image of a prescribed inspection drawing so as to produce a perspective transformed image data and for correcting distortion in the captured image based on a value regarding a distance between a lens position adapted for the coordinate transformation and a light-receiving surface of the imaging device.
    Type: Application
    Filed: February 8, 2002
    Publication date: October 3, 2002
    Inventors: Setsunobu Wakamoto, Kiyoshi Kumata, Tohru Shigeta, Kenichi Kawakami, Kohichi Nakano
  • Publication number: 20020096645
    Abstract: Disclosed are an electron-beam lithography method and system having precision in exposure improved by correcting a beam drift even within the same column of chips, and an electron-beam lithography system having the frequency of correcting a beam drift minimized without causing degradation of precision. In the electron-beam lithography method and electron-beam lithography system, a beam drift is measured frequently. When a beam drift is measured during exposure of each column of chips, a positional deviation is not corrected at the time but is corrected, step by step, while a plurality of stripes is defined. It is thus prevented that a misalignment between adjoining stripes gets larger. Moreover, a beam drift is measured a plurality of times in order to measure a variation in beam drift. If a beam drift is small, a measurement interval is extended. If a beam drift is large, the measurement interval is shortened.
    Type: Application
    Filed: October 21, 1999
    Publication date: July 25, 2002
    Inventor: KENICHI KAWAKAMI
  • Patent number: 6420700
    Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
    Type: Grant
    Filed: April 6, 2001
    Date of Patent: July 16, 2002
    Assignee: Fujitsu Limited
    Inventors: Yoshihisa Ooaeh, Kenichi Kawakami
  • Publication number: 20010013581
    Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
    Type: Application
    Filed: April 6, 2001
    Publication date: August 16, 2001
    Inventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
  • Patent number: 6242751
    Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
    Type: Grant
    Filed: July 15, 1999
    Date of Patent: June 5, 2001
    Assignee: Fujitsu Limited
    Inventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
  • Patent number: 6222195
    Abstract: A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.
    Type: Grant
    Filed: August 11, 2000
    Date of Patent: April 24, 2001
    Assignee: Fujitsu Limited
    Inventors: Akio Yamada, Satoru Sagou, Hitoshi Watanabe, Satoru Yamazaki, Kiichi Sakamoto, Manabu Ohno, Kenichi Kawakami, Katsuhiko Kobayashi
  • Patent number: 6137111
    Abstract: A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.
    Type: Grant
    Filed: May 28, 1998
    Date of Patent: October 24, 2000
    Assignee: Fujitsu Limited
    Inventors: Akio Yamada, Satoru Sagou, Hitoshi Watanabe, Satoru Yamazaki, Kiichi Sakamoto, Manabu Ohno, Kenichi Kawakami, Katsuhiko Kobayashi
  • Patent number: 6015975
    Abstract: The present invention is a method of charged particle beam exposure wherein an area of an exposure pattern is exposed by irradiating a sample with a charged particle beam while moving said sample, comprising: a step of generating speed data including the speed distribution in a direction of movement of the sample in accordance with secondary data which is generated from a pattern data including at least data of the exposure pattern and data of an exposure position, and includes at least density information of the exposure pattern; and a step of irradiating the sample with the charged particle beam in accordance with the pattern data while being moved at variable speed in accordance with the speed data. According to the invention, the through-put is improved very much without any defect of the exposure.
    Type: Grant
    Filed: October 23, 1997
    Date of Patent: January 18, 2000
    Assignee: Fujitsu Limited
    Inventors: Kenichi Kawakami, Masahiko Susa, Kobayashi Katsuhiko, Akio Yamada, Koichi Yamashita, Naoki Nishio
  • Patent number: 6002296
    Abstract: A periodic low current from an intermittent Low current generator 5 is used, and fluctuations of r1 and r10, c1 and c2, and I6 and I20, thus cancel one another. Thus, .omega..sub.0 is not fluctuated unless the oscillation frequency Tosc of a pulse wave generator OSC is fluctuated. Television and ratio audio ICs using an LPF filter do not require specific provision of any oscillator for a filter circuit, because they have an accurate oscillator. The oscillation frequency of the pulse wave generator OSC should be at least 20 times the pass band of the filter circuit.
    Type: Grant
    Filed: September 12, 1997
    Date of Patent: December 14, 1999
    Assignee: NEC Corporation
    Inventor: Kenichi Kawakami
  • Patent number: 5969365
    Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
    Type: Grant
    Filed: August 26, 1997
    Date of Patent: October 19, 1999
    Assignee: Fujitsu Limited
    Inventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
  • Patent number: 5966200
    Abstract: The present invention is a charged particle beam exposure apparatus comprising: a column portion in which an optical system for a charged particle beam is disposed; a chamber to be coupled with the column portion; a movable sample stage located in the chamber for mounting a sample thereon; and a stage position measurement device, having an optical path for measurement, along which a laser beam having a predetermined frequency is projected and is reflected by reflection means provided on the sample stage, and an optical path for reference, which in length almost equals a distance between a starting point of the optical path for measurement and the origin of the optical system in the column portion and for which the length is increased at a rate substantially consistent with a thermal expansion coefficient as material of the chamber is expanded, for measuring a change in position of the sample stage by employing a laser optical signal for measurement, which passes along the optical path for measurement, and a r
    Type: Grant
    Filed: October 10, 1997
    Date of Patent: October 12, 1999
    Assignees: Fujuitsu Limited, Advantest Corporation
    Inventors: Kenichi Kawakami, Tatsuro Ohkawa, Kazushi Ishida, Akiyoshi Tsuda
  • Patent number: 5892237
    Abstract: In a charged particle beam exposure method and an apparatus therefor, wherein the intensity of the charged particle beam used for irradiation is increased to a maximum to improve a throughput for an exposure procedure, accordingly, the temperature of a sample, such as a wafer, is elevated and thermal expansion occurs. The thermal expansion that occurs has reproducibility based on the intensity of the projected charged particle beam. Therefore, a coefficient of thermal expansion is detected by monitoring the intensity of the projected charged particle beam. A shifting distance for each irradiation position which is acquired from the thermal expansion is added as a compensation value for deflection of the charged particle beam, to provide an accurate exposure procedure.
    Type: Grant
    Filed: March 11, 1997
    Date of Patent: April 6, 1999
    Assignee: Fujitsu Limited
    Inventors: Kenichi Kawakami, Hiroshi Yasuda, Akio Yamada, Tatsuro Ohkawa, Mitsuhiro Nakano, Atsushi Saito, Yoshihisa Ooae
  • Patent number: 5830612
    Abstract: A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.
    Type: Grant
    Filed: September 11, 1996
    Date of Patent: November 3, 1998
    Assignee: Fujitsu Limited
    Inventors: Akio Yamada, Satoru Sagou, Hitoshi Watanabe, Satoru Yamazaki, Kiichi Sakamoto, Manabu Ohno, Kenichi Kawakami, Katsuhiko Kobayashi
  • Patent number: 5757015
    Abstract: A method of exposing a wafer to a charged-particle beam by directing to the wafer the charged-particle beam deflected by a deflector includes the steps of arranging a plurality of first marks at different heights, focusing the charged-particle beam on each of the first marks by using a focus coil provided above the deflector, obtaining a focus distance for each of the first marks, obtaining deflection-efficiency-correction coefficients for each of the first marks, and using linear functions of the focus distance for approximating the deflection-efficiency-correction coefficients to obtain the deflection-efficiency-correction coefficients for an arbitrary value of the focus distance. A device for carrying out the method is also set forth.
    Type: Grant
    Filed: April 18, 1996
    Date of Patent: May 26, 1998
    Assignee: Fujitsu Limited
    Inventors: Akio Takemoto, Yoshihisa Ooaeh, Tomohiko Abe, Hiroshi Yasuda, Takamasa Satoh, Hideki Nasuno, Hidefumi Yabara, Kenichi Kawakami, Kiichi Sakamoto, Tomohiro Sakazaki, Isamu Seto, Masami Takigawa, Tatsuro Ohkawa
  • Patent number: 5439729
    Abstract: A transfer metallizing film which permits formation of a beautiful and smooth metal transfer layer with thunder mark suppressed and which is used for realizing a transfer metallizing sheet superior in the transferability of the metal transfer film. The film includes a polypropylene resin film not larger than 5 kV in the amount of static electricity and has a transfer surface. The transfer surface has a surface roughness set at a value not larger than 0.1 .mu.m and also has an atomic construction ratio of the number of oxygen atoms to that of carbon atoms within 10 nm from the surface of 0.about.0.03. The other side of the film has an atomic construction ratio of the number of oxygen atoms to that of carbon atoms within 10 nm from the surface of 0.1.about.0.5.
    Type: Grant
    Filed: July 14, 1993
    Date of Patent: August 8, 1995
    Assignee: Toray Industries, Inc.
    Inventors: Kenichi Kawakami, Katsuhiro Tsuchiya, Hideo Maruhashi