Abstract: Provided are: a novel monoalkylamino intermediate (I); and a production method for a compound represented by the formula (III), which is an animal antibacterial agent, via the novel monoalkylamino intermediate.

Abstract: The inventors of the present invention have succeeded in acquiring a compound having excellent antibacterial activities against pathogens of respiratory tract infections in animals through the use of josamycin as a lead scaffold.

Abstract: A film deposition method includes the steps of: coating a solution containing a polysilane compound on a substrate to form a coating film and then carrying out a first thermal treatment in an inert atmosphere, thereby forming the coating film into a silicon film; forming a coating film containing a polysilane compound on the silicon film and then carrying out a second thermal treatment in an inert atmosphere or a reducing atmosphere, thereby forming the coating film into a silicon oxide precursor film; and carrying out a third thermal treatment in an oxidizing atmosphere, thereby forming the silicon oxide precursor film into a silicon oxide film and simultaneously densifying the silicon film.

Abstract: Disclosed is a process for efficiently producing pyripyropene derivatives having acyloxy at the 1-position and 11-position and hydroxyl at the 7-position. The process comprises selectively acylating hydroxyl at the 1-position and 11-position of a compound represented by formula B1 through one to three steps with an acylating agent in the presence or absence of a base.

Abstract: There are provided a method of manufacturing a film, suitable for forming a film having a plurality of minute through holes, and a method of manufacturing a display using the method of manufacturing a film. The method of manufacturing a film, includes: transferring a film of a first pattern onto a base material with use of an intaglio plate including the first pattern and a second pattern; and forming a film including through holes on the base material by transferring a film of the second pattern of the intaglio plate onto the film of the first pattern.

Abstract: A process for efficiently producing through a small number of steps an N-substituted 2-amino-4-(substituted-oxymethylphosphinyl)-2-butenoic ester which is an intermediate for herbicide L-AMPB. The process comprises reacting a compound represented by the following formula (1): (where R1 represents C1-4 alkyl group) with a compound represented by the following formula (2): (wherein R2, R2?, and R3 each represents C1-4 alkyl and R4 represents benzyloxycarbonyl) in the presence of a base.

Abstract: Disclosed is a process for efficiently producing pyripyropene derivatives having acyloxy at the 1-position and 11-position and hydroxyl at the 7-position. The process comprises selectively acylating hydroxyl at the 1-position and 11-position of a compound represented by formula B1 through one to three steps with an acylating agent in the presence or absence of a base.

Abstract: The present invention provides a semiconductor device including: a semiconductor chip mounted on a substrate; a heat spreader provided above the semiconductor chip; and a sealing resin interposed between the semiconductor chip and the heat spreader and covering the semiconductor chip. The heat spreader is not in contact with any of the substrate and the semiconductor chip, and has an opening.

Abstract: Disclosed is a composition for use in controlling ectoparasites, comprising as an active ingredient at least one of compounds represented by formula (I) or (III) or salts thereof. The present invention provides a composition for use in controlling ectoparasites that has excellent ectoparasite control effect and is highly safe.

Abstract: An object of the present invention is to provide a material for a precious metal tip of a spark plug, which has more excellent durability, particularly oxidation wear resistance than a conventional one. The precious metal alloy for the spark plug according to the present invention contains 0.2 to 6.0 wt. % Cr as an essential component, further at least any one of Fe or Ni, and the balance being Ir. Here, the amount of Fe and Ni to be added is preferably 2.0 to 12.0 wt. % in total. According to the present invention, the surface may be oxidized to form an oxide layer made from a Cr—Fe oxide, a Cr—Ni oxide or a Cr—Fe—Ni oxide. The oxide layer is formed by a diffusion treatment by heating the precious metal alloy at 300 to 900° C. in an oxidative atmosphere, and preferably has a thickness of 5 to 100 ?m.

Abstract: A noise-canceling device of a voice communication terminal that removes noise elements included in received voice signals. The device comprises: a digital filter array that exhibits filter qualities in response to a coefficient setting signal showing each supplied arrays of filter coefficients, and includes a first-stage filter that receives the received voice signals as well as multiple later-stage filters connected thereto in a straight line; a filter qualities designator that generates input designation that designates each qualities of the multiple digital filters forming the digital filters array; and a filter coefficient setter that retains multiple arrays of filter coefficients, extracts a filter coefficient array corresponding to the designation input from among the multiple filter coefficient arrays, and supplies to each multiple digital filters.

Abstract: A process for efficiently producing through a small number of steps an N-substituted 2-amino-4-(substituted-oxymethylphosphinyl)-2-butenoic ester which is an intermediate for herbicide L-AMPB. The process comprises reacting a compound represented by the following formula (1): (where R1 represents C1-4 alkyl group) with a compound represented by the following formula (2): (wherein R2, R2?, and R3 each represents C1-4 alkyl and R4 represents benzyloxycarbonyl) in the presence of a base.

Abstract: A thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer formed of an organic semiconductor and constituting a channel region, a gate insulating film disposed between the gate electrode and the semiconductor layer, and a pair of source/drain electrodes electrically connected to the semiconductor layer. The semiconductor layer includes a protruding portion protruding toward the substrate from an inner region of a surface, opposite the substrate, of the semiconductor layer excluding a region near ends thereof.

Abstract: A film deposition method includes the steps of: coating a solution containing a polysilane compound on a substrate to form a coating film and then carrying out a first thermal treatment in an inert atmosphere, thereby forming the coating film into a silicon film; forming a coating film containing a polysilane compound on the silicon film and then carrying out a second thermal treatment in an inert atmosphere or a reducing atmosphere, thereby forming the coating film into a silicon oxide precursor film; and carrying out a third thermal treatment in an oxidizing atmosphere, thereby forming the silicon oxide precursor film into a silicon oxide film and simultaneously densifying the silicon film.

Abstract: A single-wall carbon nanotube heterojunction is provided. In the single-wall carbon nanotube, a semiconductive single-wall carbon nanotube and a metallic single-wall carbon nanotube are joined with each other in a longitudinal direction thereof.

Abstract: An object of the present invention is to provide a material for a precious metal tip of a spark plug, which has more excellent durability, particularly oxidation wear resistance than a conventional one. The precious metal alloy for the spark plug according to the present invention contains 0.2 to 6.0 wt. % Cr as an essential component, further at least any one of Fe or Ni, and the balance being Ir. Here, the amount of Fe and Ni to be added is preferably 2.0 to 12.0 wt. % in total. According to the present invention, the surface may be oxidized to form an oxide layer made from a Cr—Fe oxide, a Cr—Ni oxide or a Cr—Fe—Ni oxide. The oxide layer is formed by a diffusion treatment by heating the precious metal alloy at 300 to 900° C. in an oxidative atmosphere, and preferably has a thickness of 5 to 100 ?m.

Abstract: A method of forming a silicon film capable of forming an excellent high-crystalline silicon film without heat treatment at high temperature is provided. A method of manufacturing a polysilane-modified silicon fine wire includes a step of: irradiating a mixed liquid including a silicon fine wire and a polysilane with light to bond the polysilane to a surface of the silicon fine wire.

Abstract: A reversible multicolor thermal recording medium which is free from fogging and has sharp contrast even after recording and erasing are performed repeatedly, and a recording method using the same are provided. A reversible multicolor recording medium is provided, which includes recording layers each containing a plurality of reversible thermal coloring compositions having different coloring tones, formed to be separated from and stacked on a surface direction of a supporting substrate; and the plurality of reversible thermal coloring compositions containing light-to-heat transforming materials which absorb infrared rays having different wavelength ranges to generate heat, respectively; wherein an absorption peak wavelength of the light-to-heat transforming material contained in the recording layers becomes the longest wavelength at the layer formed nearest the supporting substrate, and becomes a shorter wavelength as the layer is closer to the surface layer in the stacked order.

Abstract: A single-wall carbon nanotube heterojunction is provided. In the single-wall carbon nanotube, a semiconductive single-wall carbon nanotube and a metallic single-wall carbon nanotube are joined with each other in a longitudinal direction thereof.

Abstract: The present invention provides a semiconductor device including: a semiconductor chip mounted on a substrate; a heat spreader provided above the semiconductor chip; and a sealing resin interposed between the semiconductor chip and the heat spreader and covering the semiconductor chip. The heat spreader is not in contact with any of the substrate and the semiconductor chip, and has an opening.