Patents by Inventor Kenichi Kurisu
Kenichi Kurisu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11440084Abstract: A method of manufacturing an outside joint member, the outside joint member including a cup portion in a bottomed tubular shape and a shaft portion that is a shaft-like portion extending from a bottom portion of the cup portion and that has a spline shaft having an outer peripheral surface on which spline teeth are formed, includes forging a forming material to form a shape of the cup portion and a shape of the spline shaft on the shaft portion simultaneously using a forging die.Type: GrantFiled: December 18, 2019Date of Patent: September 13, 2022Assignee: JTEKT CORPORATIONInventors: Yohei Fukumoto, Motonori Nakao, Kenichi Kurisu, Shuhei Fukuda, Kazuya Matsumoto
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Publication number: 20200206804Abstract: A method of manufacturing an outside joint member, the outside joint member including a cup portion in a bottomed tubular shape and a shaft portion that is a shaft-like portion extending from a bottom portion of the cup portion and that has a spline shaft having an outer peripheral surface on which spline teeth are formed, includes forging a forming material to form a shape of the cup portion and a shape of the spline shaft on the shaft portion simultaneously using a forging die.Type: ApplicationFiled: December 18, 2019Publication date: July 2, 2020Applicant: JTEKT CORPORATIONInventors: Yohei Fukumoto, Motonori Nakao, Kenichi Kurisu, Shuhei Fukuda, Kazuya Matsumoto
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Patent number: 10087517Abstract: There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.Type: GrantFiled: April 8, 2015Date of Patent: October 2, 2018Assignee: Sumitomo Electric Industries, Ltd.Inventors: Miki Miyanaga, Kenichi Watatani, Koichi Sogabe, Hideaki Awata, Kenichi Kurisu
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Publication number: 20170029933Abstract: There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.Type: ApplicationFiled: April 8, 2015Publication date: February 2, 2017Inventors: Miki Miyanaga, Kenichi Watatani, Koichi Sogabe, Hideaki Awata, Kenichi Kurisu
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Patent number: 8911702Abstract: An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 ?m and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%.Type: GrantFiled: September 28, 2012Date of Patent: December 16, 2014Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.Inventors: Katsuhito Yoshida, Kenichi Kurisu, Tatsuya Kyotani
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Patent number: 8854731Abstract: At least one surface of a plate member made of ZnSe has a concave-and-convex structure in which a projecting section and a groove section are formed at a spatial cycle equal to or lower than the wavelength of carbon dioxide laser light to thereby provide a substrate body. On a surface of the concave-and-convex structure, an antireflection film is layered that has a lower refractive index than that of ZnSe to carbon dioxide laser light. By this configuration, the polarization state of transmitted carbon dioxide laser light is converted from a linear polarization to a circular polarization or the like.Type: GrantFiled: April 20, 2011Date of Patent: October 7, 2014Assignees: Osaka Prefecture University Public Corporation, Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.Inventors: Hisao Kikuta, Kenichi Kurisu, Keiji Ebata
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Publication number: 20140147374Abstract: An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 ?m and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%.Type: ApplicationFiled: September 28, 2012Publication date: May 29, 2014Applicants: Sumitomo Electric Hardmetal Corp., Sumitomo Electric Industries, Ltd.Inventors: Katsuhito Yoshida, Kenichi Kurisu, Tatsuya Kyotani
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Patent number: 8404136Abstract: There is provided a method for manufacturing a diffractive optical element that can suppress the generation of heat from the inside of an insulative substrate and stabilize an etching rate. A method for manufacturing a diffractive optical element composed of an insulative substrate whose surface has a bumpy structure includes a selecting step of selecting an insulative substrate having an electrical resistivity equal to or higher than a certain value by measuring electrical resistivity of insulative substrates; and an etching step of forming a bumpy structure by dry etching in a surface of the insulative substrate selected in the selecting step.Type: GrantFiled: November 13, 2009Date of Patent: March 26, 2013Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.Inventors: Kenichi Kurisu, Hideaki Imamura
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Publication number: 20110268145Abstract: At least one surface of a plate member made of ZnSe has a concave-and-convex structure in which a projecting section and a groove section are formed at a spatial cycle equal to or lower than the wavelength of carbon dioxide laser light to thereby provide a substrate body. On a surface of the concave-and-convex structure, an antireflection film is layered that has a lower refractive index than that of ZnSe to carbon dioxide laser light. By this configuration, the polarization state of transmitted carbon dioxide laser light is converted from a linear polarization to a circular polarization or the like.Type: ApplicationFiled: April 20, 2011Publication date: November 3, 2011Applicants: OSAKA PREFECTURE UNIVERSITY PUBLIC CORPORATION, SUMITOMO ELECTRIC HARDMETAL CORP., SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hisao KIKUTA, Kenichi KURISU, Keiji EBATA
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Publication number: 20110235163Abstract: A composite photonic structure element comprises a photonic crystal and multilayer films. The photonic crystal is formed by alternately laminating a plurality of sets of an active layer having a nonlinear effect for converting a fundamental wave into a second harmonic and an inactive layer having no nonlinear effect, and is constructed such that the energy of the fundamental wave coincides with a photonic bandgap end. Each of the multilayer films is formed by laminating a plurality of sets of two kinds of thin films having different refractive indexes and reflects the fundamental wave. The multilayer films are connected to both ends of the photonic crystal. The fundamental wave enters one of end faces and is reciprocally reflected between resonators having the multilayer films, so that the intensity of the fundamental wave is enhanced within the photonic crystal. The fundamental wave is converted into a second harmonic in the active layer, and the second harmonic is taken out from the other end face.Type: ApplicationFiled: December 12, 2008Publication date: September 29, 2011Applicants: OSAKA PREFECTURE UNIVERSITY PUBLIC CORPORATION, SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC HARDMETAL CORP.Inventors: Hajime Ishihara, Satoshi Kuzuhara, Keiji Ebata, Kenichi Kurisu
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Publication number: 20110011831Abstract: There is provided a method for manufacturing a diffractive optical element that can suppress the generation of heat from the inside of an insulative substrate and stabilize an etching rate. A method for manufacturing a diffractive optical element composed of an insulative substrate whose surface has a bumpy structure includes a selecting step of selecting an insulative substrate having an electrical resistivity equal to or higher than a certain value by measuring electrical resistivity of insulative substrates; and an etching step of forming a bumpy structure by dry etching in a surface of the insulative substrate selected in the selecting step.Type: ApplicationFiled: November 13, 2009Publication date: January 20, 2011Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC HARDMETAL CORP.Inventors: Kenichi Kurisu, Hideaki Imamura
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Patent number: 7528073Abstract: A dry etching method is provided, in which dry etching is performed in such a manner that a conductor to which an insulative substrate is attached is brought in electric, intimate contact with an electrode. In the dry etching method, the insulative substrate is attached to the conductor by means of a conductive grease. A diffractive optical element manufactured with the dry etching method is also provided.Type: GrantFiled: November 4, 2005Date of Patent: May 5, 2009Assignee: Sumitomo Electric Industries, Ltd.Inventor: Kenichi Kurisu
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Publication number: 20060110925Abstract: A dry etching method is provided, in which dry etching is performed in such a manner that a conductor to which an insulative substrate is attached is brought in electric, intimate contact with an electrode. In the dry etching method, the insulative substrate is attached to the conductor by means of a conductive grease. A diffractive optical element manufactured with the dry etching method is also provided.Type: ApplicationFiled: November 4, 2005Publication date: May 25, 2006Inventor: Kenichi Kurisu
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Publication number: 20040217367Abstract: Plasma is generated by an induced magnetic field produced with a coil, and the surface of a ZnSe substrate is etched by the plasma. Employing this method allows the production of a pattern in which the internal angle formed between the sidewall of the pattern and the surface of the ZnSe substrate is equal to or over 75 degrees. This makes it possible to offer a ZnSe diffractive optical element having improved diffraction efficiency and higher performance.Type: ApplicationFiled: February 10, 2004Publication date: November 4, 2004Inventors: Kenichi Kurisu, Takeshi Okada
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Patent number: 6775066Abstract: The present invention provides a different optical element having superior optical characteristics. A polycrystalline substrate having crystal grains whose sizes are not more than 1 &mgr;m or an amorphous phase at the dry-etched surface thereof, or an upper film layer 8 formed on a polycrystalline substrate 1 being the same materials as that of the polycrystalline substrate 1, which has finer crystal grains than-those of the substrate. The upper film layer 8 is dry etched, and AR coat 6 is formed thereon.Type: GrantFiled: January 22, 2002Date of Patent: August 10, 2004Assignee: Sumitomo Electric Industries, Ltd.Inventors: Kenichi Kurisu, Keiji Fuse
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Patent number: 6750151Abstract: When applying reactive ion etching on a ZnSe polycrystalline substrate, reactive gas used therefor is only chlorine-based gas which does not include a hydrocarbon group. Or the reactive gas is gas prepared by mixing chlorine-based gas which does not include a hydrocarbon group with other gas. The other gas is inert gas or gas which does not react to ZnSe. BCl3 gas is one kind of chlorine-based gas. Ar gas is one kind of inert gas. RF power is one means for activating the gas.Type: GrantFiled: November 26, 2001Date of Patent: June 15, 2004Assignee: Sumitomo Electric Industries, Ltd.Inventor: Kenichi Kurisu
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Publication number: 20020101663Abstract: The present invention provides a diffractive optical element having superior optical characteristics.Type: ApplicationFiled: January 22, 2002Publication date: August 1, 2002Applicant: Sumitomo Electric Industries, Ltd.Inventors: Kenichi Kurisu, Keiji Fuse
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Publication number: 20020081857Abstract: When applying reactive ion etching on a ZnSe polycrystalline substrate, reactive gas used therefor is only chlorine-based gas which does not include a hydrocarbon group. Or the reactive gas is gas prepared by mixing chlorine-based gas which does not include a hydrocarbon group with other gas. The other gas is inert gas or gas which does not react to ZnSe. BC13 gas is one kind of chlorine-based gas. Ar gas is one kind of inert gas. RF power is one means for activating the gas.Type: ApplicationFiled: November 26, 2001Publication date: June 27, 2002Applicant: Sumitomo Electric Industries, Ltd.Inventor: Kenichi Kurisu
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Patent number: 5192419Abstract: A p-type ZnSe bulk or film crystal of good quality has not been produced so far, although various improved methods based on MOCVD or MBE methods have been tried. Prior art required high pressure, high temperature or high vacuum to grow a p-type ZnSe crystal. This invention grows p-type ZnSe by an electrochemical deposition method. A zinc anode and a low-resistivity n-type ZnSe singlecrystalline substrate are immersed into a solution including zinc ions, selenium ions and acceptor ions. Direct current is sent from the zinc anode to the n-type ZnSe singlecrystalline substrate cathode. Selenium ions and zinc ions are attracted to the n-type ZnSe cathode. They are reduced and are deposited on the n-type ZnSe cathode. Deposited ZnSe film is a p-type semiconductor. A ZnSe semiconductor with a pn-junction is obtained.Type: GrantFiled: September 25, 1991Date of Patent: March 9, 1993Assignee: Sumitomo Electric Industries, Ltd.Inventors: Koichi Matsuura, Fuminori Takeda, Kenichi Kurisu