Patents by Inventor Kenichi Kurisu

Kenichi Kurisu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11440084
    Abstract: A method of manufacturing an outside joint member, the outside joint member including a cup portion in a bottomed tubular shape and a shaft portion that is a shaft-like portion extending from a bottom portion of the cup portion and that has a spline shaft having an outer peripheral surface on which spline teeth are formed, includes forging a forming material to form a shape of the cup portion and a shape of the spline shaft on the shaft portion simultaneously using a forging die.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: September 13, 2022
    Assignee: JTEKT CORPORATION
    Inventors: Yohei Fukumoto, Motonori Nakao, Kenichi Kurisu, Shuhei Fukuda, Kazuya Matsumoto
  • Publication number: 20200206804
    Abstract: A method of manufacturing an outside joint member, the outside joint member including a cup portion in a bottomed tubular shape and a shaft portion that is a shaft-like portion extending from a bottom portion of the cup portion and that has a spline shaft having an outer peripheral surface on which spline teeth are formed, includes forging a forming material to form a shape of the cup portion and a shape of the spline shaft on the shaft portion simultaneously using a forging die.
    Type: Application
    Filed: December 18, 2019
    Publication date: July 2, 2020
    Applicant: JTEKT CORPORATION
    Inventors: Yohei Fukumoto, Motonori Nakao, Kenichi Kurisu, Shuhei Fukuda, Kazuya Matsumoto
  • Patent number: 10087517
    Abstract: There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: October 2, 2018
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Miki Miyanaga, Kenichi Watatani, Koichi Sogabe, Hideaki Awata, Kenichi Kurisu
  • Publication number: 20170029933
    Abstract: There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.
    Type: Application
    Filed: April 8, 2015
    Publication date: February 2, 2017
    Inventors: Miki Miyanaga, Kenichi Watatani, Koichi Sogabe, Hideaki Awata, Kenichi Kurisu
  • Patent number: 8911702
    Abstract: An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 ?m and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: December 16, 2014
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Katsuhito Yoshida, Kenichi Kurisu, Tatsuya Kyotani
  • Patent number: 8854731
    Abstract: At least one surface of a plate member made of ZnSe has a concave-and-convex structure in which a projecting section and a groove section are formed at a spatial cycle equal to or lower than the wavelength of carbon dioxide laser light to thereby provide a substrate body. On a surface of the concave-and-convex structure, an antireflection film is layered that has a lower refractive index than that of ZnSe to carbon dioxide laser light. By this configuration, the polarization state of transmitted carbon dioxide laser light is converted from a linear polarization to a circular polarization or the like.
    Type: Grant
    Filed: April 20, 2011
    Date of Patent: October 7, 2014
    Assignees: Osaka Prefecture University Public Corporation, Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Hisao Kikuta, Kenichi Kurisu, Keiji Ebata
  • Publication number: 20140147374
    Abstract: An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 ?m and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%.
    Type: Application
    Filed: September 28, 2012
    Publication date: May 29, 2014
    Applicants: Sumitomo Electric Hardmetal Corp., Sumitomo Electric Industries, Ltd.
    Inventors: Katsuhito Yoshida, Kenichi Kurisu, Tatsuya Kyotani
  • Patent number: 8404136
    Abstract: There is provided a method for manufacturing a diffractive optical element that can suppress the generation of heat from the inside of an insulative substrate and stabilize an etching rate. A method for manufacturing a diffractive optical element composed of an insulative substrate whose surface has a bumpy structure includes a selecting step of selecting an insulative substrate having an electrical resistivity equal to or higher than a certain value by measuring electrical resistivity of insulative substrates; and an etching step of forming a bumpy structure by dry etching in a surface of the insulative substrate selected in the selecting step.
    Type: Grant
    Filed: November 13, 2009
    Date of Patent: March 26, 2013
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Kenichi Kurisu, Hideaki Imamura
  • Publication number: 20110268145
    Abstract: At least one surface of a plate member made of ZnSe has a concave-and-convex structure in which a projecting section and a groove section are formed at a spatial cycle equal to or lower than the wavelength of carbon dioxide laser light to thereby provide a substrate body. On a surface of the concave-and-convex structure, an antireflection film is layered that has a lower refractive index than that of ZnSe to carbon dioxide laser light. By this configuration, the polarization state of transmitted carbon dioxide laser light is converted from a linear polarization to a circular polarization or the like.
    Type: Application
    Filed: April 20, 2011
    Publication date: November 3, 2011
    Applicants: OSAKA PREFECTURE UNIVERSITY PUBLIC CORPORATION, SUMITOMO ELECTRIC HARDMETAL CORP., SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hisao KIKUTA, Kenichi KURISU, Keiji EBATA
  • Publication number: 20110235163
    Abstract: A composite photonic structure element comprises a photonic crystal and multilayer films. The photonic crystal is formed by alternately laminating a plurality of sets of an active layer having a nonlinear effect for converting a fundamental wave into a second harmonic and an inactive layer having no nonlinear effect, and is constructed such that the energy of the fundamental wave coincides with a photonic bandgap end. Each of the multilayer films is formed by laminating a plurality of sets of two kinds of thin films having different refractive indexes and reflects the fundamental wave. The multilayer films are connected to both ends of the photonic crystal. The fundamental wave enters one of end faces and is reciprocally reflected between resonators having the multilayer films, so that the intensity of the fundamental wave is enhanced within the photonic crystal. The fundamental wave is converted into a second harmonic in the active layer, and the second harmonic is taken out from the other end face.
    Type: Application
    Filed: December 12, 2008
    Publication date: September 29, 2011
    Applicants: OSAKA PREFECTURE UNIVERSITY PUBLIC CORPORATION, SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Hajime Ishihara, Satoshi Kuzuhara, Keiji Ebata, Kenichi Kurisu
  • Publication number: 20110011831
    Abstract: There is provided a method for manufacturing a diffractive optical element that can suppress the generation of heat from the inside of an insulative substrate and stabilize an etching rate. A method for manufacturing a diffractive optical element composed of an insulative substrate whose surface has a bumpy structure includes a selecting step of selecting an insulative substrate having an electrical resistivity equal to or higher than a certain value by measuring electrical resistivity of insulative substrates; and an etching step of forming a bumpy structure by dry etching in a surface of the insulative substrate selected in the selecting step.
    Type: Application
    Filed: November 13, 2009
    Publication date: January 20, 2011
    Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Kenichi Kurisu, Hideaki Imamura
  • Patent number: 7528073
    Abstract: A dry etching method is provided, in which dry etching is performed in such a manner that a conductor to which an insulative substrate is attached is brought in electric, intimate contact with an electrode. In the dry etching method, the insulative substrate is attached to the conductor by means of a conductive grease. A diffractive optical element manufactured with the dry etching method is also provided.
    Type: Grant
    Filed: November 4, 2005
    Date of Patent: May 5, 2009
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Kenichi Kurisu
  • Publication number: 20060110925
    Abstract: A dry etching method is provided, in which dry etching is performed in such a manner that a conductor to which an insulative substrate is attached is brought in electric, intimate contact with an electrode. In the dry etching method, the insulative substrate is attached to the conductor by means of a conductive grease. A diffractive optical element manufactured with the dry etching method is also provided.
    Type: Application
    Filed: November 4, 2005
    Publication date: May 25, 2006
    Inventor: Kenichi Kurisu
  • Publication number: 20040217367
    Abstract: Plasma is generated by an induced magnetic field produced with a coil, and the surface of a ZnSe substrate is etched by the plasma. Employing this method allows the production of a pattern in which the internal angle formed between the sidewall of the pattern and the surface of the ZnSe substrate is equal to or over 75 degrees. This makes it possible to offer a ZnSe diffractive optical element having improved diffraction efficiency and higher performance.
    Type: Application
    Filed: February 10, 2004
    Publication date: November 4, 2004
    Inventors: Kenichi Kurisu, Takeshi Okada
  • Patent number: 6775066
    Abstract: The present invention provides a different optical element having superior optical characteristics. A polycrystalline substrate having crystal grains whose sizes are not more than 1 &mgr;m or an amorphous phase at the dry-etched surface thereof, or an upper film layer 8 formed on a polycrystalline substrate 1 being the same materials as that of the polycrystalline substrate 1, which has finer crystal grains than-those of the substrate. The upper film layer 8 is dry etched, and AR coat 6 is formed thereon.
    Type: Grant
    Filed: January 22, 2002
    Date of Patent: August 10, 2004
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kenichi Kurisu, Keiji Fuse
  • Patent number: 6750151
    Abstract: When applying reactive ion etching on a ZnSe polycrystalline substrate, reactive gas used therefor is only chlorine-based gas which does not include a hydrocarbon group. Or the reactive gas is gas prepared by mixing chlorine-based gas which does not include a hydrocarbon group with other gas. The other gas is inert gas or gas which does not react to ZnSe. BCl3 gas is one kind of chlorine-based gas. Ar gas is one kind of inert gas. RF power is one means for activating the gas.
    Type: Grant
    Filed: November 26, 2001
    Date of Patent: June 15, 2004
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Kenichi Kurisu
  • Publication number: 20020101663
    Abstract: The present invention provides a diffractive optical element having superior optical characteristics.
    Type: Application
    Filed: January 22, 2002
    Publication date: August 1, 2002
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Kenichi Kurisu, Keiji Fuse
  • Publication number: 20020081857
    Abstract: When applying reactive ion etching on a ZnSe polycrystalline substrate, reactive gas used therefor is only chlorine-based gas which does not include a hydrocarbon group. Or the reactive gas is gas prepared by mixing chlorine-based gas which does not include a hydrocarbon group with other gas. The other gas is inert gas or gas which does not react to ZnSe. BC13 gas is one kind of chlorine-based gas. Ar gas is one kind of inert gas. RF power is one means for activating the gas.
    Type: Application
    Filed: November 26, 2001
    Publication date: June 27, 2002
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventor: Kenichi Kurisu
  • Patent number: 5192419
    Abstract: A p-type ZnSe bulk or film crystal of good quality has not been produced so far, although various improved methods based on MOCVD or MBE methods have been tried. Prior art required high pressure, high temperature or high vacuum to grow a p-type ZnSe crystal. This invention grows p-type ZnSe by an electrochemical deposition method. A zinc anode and a low-resistivity n-type ZnSe singlecrystalline substrate are immersed into a solution including zinc ions, selenium ions and acceptor ions. Direct current is sent from the zinc anode to the n-type ZnSe singlecrystalline substrate cathode. Selenium ions and zinc ions are attracted to the n-type ZnSe cathode. They are reduced and are deposited on the n-type ZnSe cathode. Deposited ZnSe film is a p-type semiconductor. A ZnSe semiconductor with a pn-junction is obtained.
    Type: Grant
    Filed: September 25, 1991
    Date of Patent: March 9, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Koichi Matsuura, Fuminori Takeda, Kenichi Kurisu