Abstract: A developing roller is provided which is capable of forming a toner layer having the most uniform possible thickness on an outer peripheral surface of a roller body thereof. The roller body (2) of the developing roller (1) is formed from a rubber composition comprising: a base rubber which is a mixture comprising NBR and/or SBR, CR and an epichlorohydrin rubber; and not less than 2.5 parts by mass and not greater than 15 parts by mass of a tackiness imparting agent based on 100 parts by mass of the base rubber.

Abstract: An automatic document feeder includes a sheet feeding tray on which a document is stacked; a slit glass on which the document is scanned while moving; a discharge path in which the document is conveyed after the document is scanned; a document discharge unit to which the document is discharged through the discharge path; and a stamp device that makes a mark on a scanned surface of the document being in the discharge path. The stamp device includes a printing unit that faces the scanned surface of the document. The printing unit is movable between a first position at which the printing unit faces the document being in the discharge path and a second position at which the printing unit is retracted from the discharge path.

Abstract: Compositions of fluorapatite derivative crystals are disclosed herein. Also disclosed are methods of using these compositions to treat tooth sensitivity, to use as an anticaries treatment, to use as a restorative material, to use as a tooth surface whitener, and to combat or lessen the side effects of tooth whitening.

Abstract: The semiconductive roller according to the present invention includes a roller body having an outer peripheral surface made of a crosslinked substance of a semiconductive rubber composition and exhibiting Shore A hardness of not more than 60, the semiconductive rubber composition contains a base polymer made of a mixture of (1) mixed rubber N of liquid nitrile rubber and solid nitrile rubber, (2) chloroprene rubber C, and (3) epichlorohydrin rubber E in a mass ratio (C+E)/N of 10/90 to 80/20, the ratios of the chloroprene rubber and the epichlorohydrin rubber in the total quantity of the base polymer are not less than 5 mass % and not less than 5 mass % respectively, and roller resistance at an applied voltage of 5 V is not less than 104? and not more than 109?.

Abstract: A semiconductive roller is provided which includes a roller body formed from a highly extrudable rubber composition containing an SBR and an epichlorohydrin rubber in combination as a rubber component, the roller body having a higher production yield and higher toner imaging durability, and unlikely to suffer from reduction in image density due to adhesion of toner and a contact mark on an outer peripheral surface thereof with a smaller compression set. In the rubber component, the SBR and the epichlorohydrin rubber are present in an SBR excess state. In the rubber composition, a crosslinking component for crosslinking the rubber component includes a sulfur crosslinking agent and 0.75 to 3 parts by mass of a thiazole accelerating agent based on 100 parts by mass of the rubber component. The roller body (2) of the semiconductive roller (1) is made of a crosslinking product of the rubber composition.

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.

Abstract: A developing roller is provided, which is particularly used in an image forming apparatus of a highly durable design and is free from toner leakage even after formation of a predetermined number of images. Opposite end regions (5a) of an outer peripheral surface (5) of a roller body (2) of the developing roller (1) to be respectively kept in sliding contact with seal members each have a friction coefficient ? of not greater than 0.15.

Abstract: A developing roller is provided which is capable of forming a toner layer having the most uniform possible thickness on an outer peripheral surface of a roller body thereof. The roller body (2) of the developing roller (1) is formed from a rubber composition containing a base rubber which is a mixture of NBR and/or SBR, CR, an epichlorohydrin rubber and IIR, wherein the IIR is present in a proportion of not less than 2.5 parts by mass and not greater than 20 parts by mass in 100 parts by mass of the base rubber.

Abstract: A developing roller is provided which is capable of forming a toner layer having the most uniform possible thickness on an outer peripheral surface of a roller body thereof. The roller body (2) of the developing roller (1) is formed from a rubber composition comprising: a base rubber which is a mixture comprising NBR and/or SBR, CR and an epichlorohydrin rubber; and not less than 2.5 parts by mass and not greater than 15 parts by mass of a tackiness imparting agent based on 100 parts by mass of the base rubber.

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.

Abstract: An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer 2; (c) removing a surface layer of the silicon carbide layer 2, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching.

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.

Abstract: A developing roller is provided, which is particularly used in an image forming apparatus of a highly durable design and is free from toner leakage even after formation of a predetermined number of images. Opposite end regions (5a) of an outer peripheral surface (5) of a roller body (2) of the developing roller (1) to be respectively kept in sliding contact with seal members each have a friction coefficient ? of not greater than 0.15.

Abstract: An inventive developing roller is adapted for use in an electrophotographic image forming apparatus. The developing roller includes a roller body. At least an outer peripheral surface of the roller body is formed from a rubber composition containing a base rubber. The base rubber contains a styrene butadiene rubber in a proportion of not less than 10 mass % and not greater than 70 mass % based on the overall amount of the base rubber. The outer peripheral surface of the rubber body has a surface roughness Ra of not less than 0.78 ?m and not greater than 1.8 ?m.

Abstract: An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The method for manufacturing the silicon carbide semiconductor device according to the invention includes the steps of: (a) preparing a silicon carbide substrate; (b) forming an epitaxial layer on a first main surface of the silicon carbide substrate; (c) forming a protective film on the epitaxial layer; (d) forming a first metal layer on a second main surface of the silicon carbide substrate; (e) applying heat treatment to the silicon carbide substrate at a predetermined temperature to form an ohmic junction between the first metal layer and the second main surface of the silicon carbide substrate; (f) removing the protective film; (g) forming a second metal layer on the epitaxial layer; and (h) applying heat treatment to the silicon carbide substrate at a temperature from 400° C. to 600° C.

Abstract: Compositions of apatite derivative crystals are disclosed herein. Also disclosed are methods of using these compositions to treat tooth sensitivity, to use as an anticaries treatment, to use as a restorative material, to use as a tooth surface whitener, and to combat or lessen the side effects of tooth whitening.

Abstract: In a termination structure in which a JTE layer is provided, a level or defect existing at an interface between a semiconductor layer and an insulating film, or a minute amount of adventitious impurities that infiltrate into the semiconductor interface from the insulating film or from an outside through the insulating film becomes a source or a breakdown point of a leakage current, which deteriorates a breakdown voltage.

Abstract: A silicon carbide semiconductor element, including: i) an n-type silicon carbide substrate doped with a dopant, such as nitrogen, at a concentration C, wherein the substrate has a lattice constant that decreases with doping; ii) an n-type silicon carbide epitaxially-grown layer doped with the dopant, but at a smaller concentration than the substrate; and iii) an n-type buffer layer doped with the dopant, and arranged between the substrate and the epitaxially-grown layer, wherein the buffer layer has a multilayer structure in which two or more layers having the same thickness are laminated, and is configured such that, based on a number of layers (N) in the multilayer structure, a doping concentration of a K-th layer from a silicon carbide epitaxially-grown layer side is C·K/(N+1).

Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.