Patents by Inventor Kenichi Kuroda

Kenichi Kuroda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100155857
    Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.
    Type: Application
    Filed: March 1, 2010
    Publication date: June 24, 2010
    Inventors: Kenichi KURODA, Kozo Watanabe, Hirohiko Yamamoto
  • Patent number: 7687914
    Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.
    Type: Grant
    Filed: October 30, 2007
    Date of Patent: March 30, 2010
    Assignees: Renesas Technology Corporation, Hitachi ULSI Systems Co., Ltd.
    Inventors: Kenichi Kuroda, Kozo Watanabe, Hirohiko Yamamoto
  • Patent number: 7589423
    Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.
    Type: Grant
    Filed: May 24, 2007
    Date of Patent: September 15, 2009
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.
    Inventors: Kenichi Kuroda, Kozo Watanabe, Hirohiko Yamamoto
  • Patent number: 7564072
    Abstract: A semiconductor device includes an anode electrode in Schottky contact with an n-type drift layer formed in an SiC substrate and a JTE region formed outside the anode electrode. The JTE region is made up of a first p-type zone formed in an upper portion of the drift layer under an edge of the anode electrode and a second p-type zone formed outside the first p-type zone having a lower surface impurity concentration than the first p-type zone. The second p-type zone is provided 15 ?m or more outwardly away from the edge of the anode electrode. The surface impurity concentration of the first p-type zone ranges from 1.8×1013 to 4×1013 cm?2, and that of the second p-type zone ranges from 1×1013 to 2.5×1013 cm?2.
    Type: Grant
    Filed: June 2, 2005
    Date of Patent: July 21, 2009
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kenichi Ohtsuka, Yoichiro Tarui, Yoshinori Matsuno, Kenichi Kuroda, Hiroshi Sugimoto
  • Publication number: 20090157953
    Abstract: A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.
    Type: Application
    Filed: February 2, 2009
    Publication date: June 18, 2009
    Inventors: Kiyoshi Matsubara, Naoki Yashiki, Shiro Baba, Takashi Ito, Hirofumi Mukai, Masanao Sato, Masaaki Terasawa, Kenichi Kuroda, Kazuyoshi Shiba
  • Publication number: 20090134404
    Abstract: On a major surface of an n-type silicon carbide inclined substrate (2) is formed an n-type voltage-blocking layer (3) made of silicon carbide by means of epitaxial growth. On the n-type voltage-blocking layer (3) is formed a p-type silicon carbide region (4) rectangular when viewed from above. On the surface of the p-type silicon carbide region (4) is formed a p-type contact electrode (5). In the p-type silicon carbide region (4), the periphery of the p-type silicon carbide region (4) that is parallel with a (11-20) plane (14a) of the silicon carbide crystal, which is liable to cause avalanche breakdown, is located on the short side. In this manner, the dielectric strength of a silicon carbide semiconductor device can be improved.
    Type: Application
    Filed: April 24, 2006
    Publication date: May 28, 2009
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Hiroshi Sugimoto, Yoshinori Matsuno, Kenichi Ohtsuka, Noboru Mikami, Kenichi Kuroda
  • Publication number: 20090098719
    Abstract: An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The method for manufacturing the silicon carbide semiconductor device according to the invention includes the steps of: (a) preparing a silicon carbide substrate; (b) forming an epitaxial layer on a first main surface of the silicon carbide substrate; (c) forming a protective film on the epitaxial layer; (d) forming a first metal layer on a second main surface of the silicon carbide substrate; (e) applying heat treatment to the silicon carbide substrate at a predetermined temperature to form an ohmic junction between the first metal layer and the second main surface of the silicon carbide substrate; (f) removing the protective film; (g) forming a second metal layer on the epitaxial layer; and (h) applying heat treatment to the silicon carbide substrate at a temperature from 400° C. to 600° C.
    Type: Application
    Filed: August 8, 2008
    Publication date: April 16, 2009
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Yoshinori MATSUNO, Kenichi Ohtsuka, Kenichi Kuroda, Shozo Shikama, Naoki Yutani
  • Patent number: 7505329
    Abstract: A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.
    Type: Grant
    Filed: September 25, 2007
    Date of Patent: March 17, 2009
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems, Co., Ltd.
    Inventors: Kiyoshi Matsubara, Naoki Yashiki, Shiro Baba, Takashi Ito, Hirofumi Mukai, Masanao Sato, Masaaki Terasawa, Kenichi Kuroda, Kazuyoshi Shiba
  • Publication number: 20080211056
    Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.
    Type: Application
    Filed: October 30, 2007
    Publication date: September 4, 2008
    Inventors: Kenichi Kuroda, Kozo Watanabe, Hirohlko Yamamoto
  • Patent number: 7411302
    Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.
    Type: Grant
    Filed: May 10, 2006
    Date of Patent: August 12, 2008
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.
    Inventors: Kenichi Kuroda, Kozo Watanabe, Hirohiko Yamamoto
  • Publication number: 20080139701
    Abstract: There is provided a powdered polycarboxylic acid-based cement dispersant containing a polyamide-polyamine in a skeleton of a polymer thereof and a dispersant composition containing the dispersant, the dispersant having improved water reducing ability, slump-flow retention, and strength-developing properties of concrete, enabling effective prevention of blocking, being highly soluble in a slurry, and being homogeneously mixed with an inorganic powder. The powdered polycarboxylic acid-based cement dispersant comprises a powdered cement dispersant obtained by dry-powdering a solution or dispersion of a copolymer containing a polyamide-polyamine in a skeleton of a polymer thereof, wherein the powder has a sphere form, an average particle diameter of 30 to 300 ?m, and a particle size distribution in which the mass of particles having a particle diameter of 50 to 350 ?m accounts for 70% or more of the total mass of the powder.
    Type: Application
    Filed: December 2, 2005
    Publication date: June 12, 2008
    Applicants: SIKA LTD, TOHKO CHEMICAL INDUSTRY CO. LTD.
    Inventors: Wernher M Danzinger, Kaname Saitoh, Tetsu Tomoyose, Atsushi Kobayashi, Akira Ikeda, Kenichi Kuroda
  • Patent number: 7336535
    Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: February 26, 2008
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.
    Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
  • Publication number: 20080028134
    Abstract: A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.
    Type: Application
    Filed: September 25, 2007
    Publication date: January 31, 2008
    Inventors: Kiyoshi MATSUBARA, Naoki Yashiki, Shiro Baba, Takashi Ito, Hirofumi Mukai, Masanao Sato, Masaaki Terasawa, Kenichi Kuroda, Kazuyoshi Shiba
  • Patent number: 7295476
    Abstract: A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.
    Type: Grant
    Filed: January 25, 2007
    Date of Patent: November 13, 2007
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.
    Inventors: Kiyoshi Matsubara, Naoki Yashiki, Shiro Baba, Takashi Ito, Hirofumi Mukai, Masanao Sato, Masaaki Terasawa, Kenichi Kuroda, Kazuyoshi Shiba
  • Publication number: 20070222080
    Abstract: There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary BL between the element forming region DA and dummy region FA by placing the first dummy pattern DP1 of relatively wider area and the second dummy pattern DP2 of relatively small area in the dummy region FA. Thereby, the flatness of the surface of the silicon oxide film embedded within the isolation groove can be improved over the entire part of the dummy region FA. Moreover, an increase of the mask data can be controlled when the first dummy patterns DP1 occupy a relatively wide region among the dummy region FA.
    Type: Application
    Filed: May 24, 2007
    Publication date: September 27, 2007
    Inventors: Kenichi Kuroda, Kozo Watanabe, Hirohiko Yamamoto
  • Publication number: 20070171692
    Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.
    Type: Application
    Filed: March 28, 2007
    Publication date: July 26, 2007
    Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
  • Publication number: 20070133308
    Abstract: A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.
    Type: Application
    Filed: January 25, 2007
    Publication date: June 14, 2007
    Inventors: Kiyoshi Matsubara, Naoki Yashiki, Shiro Baba, Takashi Ito, Hirofumi Mukai, Masanao Sato, Masaaki Terasawa, Kenichi Kuroda, Kazuyoshi Shiba
  • Patent number: 7212425
    Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.
    Type: Grant
    Filed: September 19, 2005
    Date of Patent: May 1, 2007
    Assignees: Renesas Technology Corp., Hitachi Ulsi Systems Co., Ltd.
    Inventors: Kenichi Kuroda, Toshifumi Takeda, Hisahiro Moriuchi, Masaki Shirai, Jiroh Sakaguchi, Akinori Matsuo, Shoji Yoshida
  • Patent number: 7184321
    Abstract: A semiconductor device having an electrically erasable and programmable nonvolatile memory, for example, a rewritable nonvolatile memory including memory cells arranged in rows and columns and disposed to facilitate both flash erasure as well as selective erasure of individual units of plural memory cells. The semiconductor device which functions as a microcomputer chip also has a processing unit and includes an input terminal for receiving an operation mode signal for switching the microcomputer between a first operation mode in which the flash memory is rewritten under control of a processing unit and a second operation mode in which the flash memory is rewritten under control of separate writing circuit externally connectable to the microcomputer.
    Type: Grant
    Filed: October 7, 2005
    Date of Patent: February 27, 2007
    Assignees: Hitachi Ulsi Systems Co., Ltd., Renesas Technology Corp.
    Inventors: Kiyoshi Matsubara, Naoki Yashiki, Shiro Baba, Takashi Ito, Hirofumi Mukai, Masanao Sato, Masaaki Terasawa, Kenichi Kuroda, Kazuyoshi Shiba
  • Patent number: 7166893
    Abstract: A MISFET capable of a high speed operation includes a metal silicide layer in a high concentration region aligned with a gate side wall layer on a self-alignment basis. A MISFET which can be driven at a high voltage includes an LDD portion having a width greater than the width of the side wall layer, a high concentration region in contact with the LDD portion and a metal silicide layer in the high concentration region.
    Type: Grant
    Filed: September 23, 2002
    Date of Patent: January 23, 2007
    Assignee: Renesas Technology Corp.
    Inventors: Yasuhiro Taniguchi, Shoji Shukuri, Kenichi Kuroda, Shuji Ikeda, Takashi Hashimoto