Patents by Inventor Kenichi Sato

Kenichi Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10381084
    Abstract: A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cell, a first word line electrically connected to a gate of the first memory cell, a second word line electrically connected to a gate of the second memory cell, and a control unit that performs an erasing operation on the first and second memory cells. During the erasing operation, the control unit applies a first voltage to a first word line and a second voltage higher than the first voltage to a second word line.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: August 13, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masanobu Shirakawa, Takuya Futatsuyama, Kenichi Abe, Hiroshi Nakamura, Keisuke Yonehama, Atsuhiro Sato, Hiroshi Shinohara, Yasuyuki Baba, Toshifumi Minami
  • Patent number: 10351467
    Abstract: A glass lining that has an excellent balance between a hydrophilic property and a hydrophobic property on its surface, that has less adhesion of dirt than a typical GL since having an excellent stain-proof property against both oily stains and aqueous stains, and that can maintain the stain-proof property and the self-cleaning performance for a long time after the glass lining is cleaned, leading to excellent cleaning performance and low dirt-adhesion. The glass lining includes a lining and a conductive inorganic compound contained in the lining. The glass lining is structured to have a plurality of hydrophilic concave portions and net-like hydrophobic convex portions connecting peripheries of the plurality of hydrophilic concave portions.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: July 16, 2019
    Assignee: HAKKO SANGYO CO., LTD.
    Inventors: Katsuhiro Sato, Kenichi Fukuda
  • Publication number: 20190199162
    Abstract: A rotary electric machine of the present invention includes: a stator; a rotor placed on an inner diameter side of the stator through an air gap and fixed to a rotating shaft; a stator frame supporting the stator; a casing storing the stator and the rotor; an outer fan fixed to the rotating shaft; a heat exchanger installed above the casing for heat exchange between outside air taken through the outer fan and internal air to remove heat; and an outer fan duct installed on an end portion of the casing in an axial direction, provided with the outer fan in an inside of the outer fan duct, and formed with a ventilation path through which the outside air is delivered to the heat exchanger. A plate-shaped member has at least a curved surface portion. The plate-shaped member forms the ventilation path of the outer fan duct.
    Type: Application
    Filed: November 5, 2018
    Publication date: June 27, 2019
    Inventors: Misato SATO, Takeshi MORI, Kenichi SUGIMOTO, Takayuki KOYAMA
  • Publication number: 20190185986
    Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
    Type: Application
    Filed: February 26, 2019
    Publication date: June 20, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Tetsunori MARUYAMA, Yuki IMOTO, Hitomi SATO, Masahiro WATANABE, Mitsuo MASHIYAMA, Kenichi OKAZAKI, Motoki NAKASHIMA, Takashi SHIMAZU
  • Patent number: 10312906
    Abstract: A switch apparatus is provided, including: a main switch connected between first and second terminals, and electrically connecting or disconnecting the first and second terminals according to gate voltage applied to a gate terminal; a voltage output unit having a voltage divider including a first voltage-division resistance on the first terminal side and a second voltage-division resistance on the second terminal side, and outputting voltage corresponding to voltage of the first terminal and voltage of the second terminal if the main switch is caused to enter a connected state; a buffer outputting voltage following output voltage of the voltage output unit in a connected state of the main switch; and a switch control circuit supplying first voltage corresponding to output voltage of the buffer to the gate terminal, and supplying a second voltage corresponding to output voltage of the buffer to a bulk terminal of the main switch.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: June 4, 2019
    Assignee: Asahi Kasei Microdevices Corporation
    Inventors: Kenichi Sato, Atsuo Ito
  • Patent number: 10303085
    Abstract: Provided is an electrophotographic photosensitive member capable of achieving both high leak resistance and reduction in variations in dark part potential and bright part potential due to repeated use even when CB is used for an electrically conductive layer. An electrophotographic photosensitive member including: a support, an electrically conductive layer, and a photosensitive layer, sequentially, wherein the electrically conductive layer contains a binder resin and carbon black, a number average primary particle diameter of the carbon black is 200 nm or more and 500 nm or less, an average inter-particle distance of the carbon black is 200 nm or more and 600 nm or less, a coefficient of variation of an inter-particle distance is 1.2 or less, and SF-1 of the carbon black is 150 or less.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: May 28, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Taichi Sato, Jumpei Kuno, Kenichi Kaku, Takashi Anezaki, Atsushi Fujii
  • Patent number: 10287933
    Abstract: In an assembly of a hollow poppet valve and a valve seat insert, the hollow poppet valve's head is integrally formed with a stem end, a hollow part is formed from the head to a stem, and coolant is filled into the hollow part along with an inert gas. The valve seat insert is formed of iron base sintered alloy and obtained by integrating two layers of a supporting material side layer and a valve contact face side layer. The hollow poppet valve is formed of a material having thermal conductivity of 5-45 (W/m·K) at 20-1000° C. The valve seat insert includes the supporting material side layer having thermal conductivity of 23-50 (W/m·K) at 20-300° C. and a valve contact face side layer having thermal conductivity of 10-22 (W/m·K) at 20-300° C. This enables a valve temperature decrease throughout an engine's entire RPM range compared with the prior art.
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: May 14, 2019
    Assignees: NIPPON PISTON RING CO., LTD., NITTAN VALVE CO., LTD.
    Inventors: Satoshi Ikemi, Hiroshi Oshige, Kiyoshi Suwa, Kenichi Sato, Kouji Kunitake, Ryouichi Yoshino
  • Patent number: 10265785
    Abstract: A surface-coated cutting tool of the present invention includes: a cutting tool body; and a hard coating layer provided on a surface of the cutting tool body, in which the hard coating layer includes a complex nitride or carbonitride layer, which is expressed by a composition formula: (Ti1-xAlx)(CyN1-y), the average content ratio Xavg of Al and the average content ratio Yavg of C in the complex nitride or carbonitride layer satisfy 0.60?Xavg?0.95 and 0?Yavg?0.005, provided that each of Xavg and Yavg is in atomic ratio, the complex nitride or carbonitride layer includes crystal grains with a cubic structure, and in the crystal grains with the cubic structure, a composition of Ti and Al is periodically changed in a direction of the normal line to the surface of the cutting tool body.
    Type: Grant
    Filed: March 26, 2015
    Date of Patent: April 23, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Sho Tatsuoka, Kenichi Sato, Kenji Yamaguchi
  • Patent number: 10224437
    Abstract: A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: March 5, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Shogo Kamakura, Ryuta Yamada, Kenichi Sato
  • Patent number: 10224361
    Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: March 5, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Koei Yamamoto, Terumasa Nagano, Kazuhisa Yamamura, Kenichi Sato, Ryutaro Tsuchiya
  • Publication number: 20190051767
    Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.
    Type: Application
    Filed: December 12, 2016
    Publication date: February 14, 2019
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Koei YAMAMOTO, Shigeyuki NAKAMURA, Terumasa NAGANO, Kenichi SATO
  • Patent number: 10196096
    Abstract: A vehicle-body structure of a vehicle includes a first frame forming a closed cross-section portion, a reinforcing member disposed in the closed cross-section portion and connected to the first frame, and another vehicle-body member connected to an outer surface of the first frame. A connection portion of the first frame and the reinforcing member includes a rigid joint portion where the first frame and the reinforcing member are joined, and a flexible joint portion where the first frame and the reinforcing member are joined, with a damper member being disposed therebetween. The other vehicle-body member is connected to the first frame in a manner such that at least a part of the other vehicle-body member overlaps the flexible joint portion in a thickness direction of the first frame, and has a high rigidity portion that enhances rigidity at the part that overlaps the flexible joint portion.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: February 5, 2019
    Assignee: MAZDA MOTOR CORPORATION
    Inventors: Kenichi Sato, Keizo Kawasaki, Takeshi Nakamura
  • Patent number: 10192923
    Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: January 29, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Koei Yamamoto, Terumasa Nagano, Kazuhisa Yamamura, Kenichi Sato, Ryutaro Tsuchiya
  • Publication number: 20180331134
    Abstract: A photodiode array 1 has a plurality of photodetector channels 10 which are farmed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels 10. The photodiode array 1 comprises: a p?-type semiconductor layer 13 formed on the n-type semiconductor layer 12 of the substrate 2; resistors 4 each of which is provided to each of the photodetector channels 10 and is connected to a signal conductor 3 at one end thereof; and an n-type separating part 20 formed between the plurality of photodetector channels 10. The p?-type semiconductor layer 13 fauns a pn junction at the interface between the substrate 2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.
    Type: Application
    Filed: July 20, 2018
    Publication date: November 15, 2018
    Inventors: Kazuhisa YAMAMURA, Kenichi SATO
  • Publication number: 20180311742
    Abstract: In a hard coating layer that contains at least any of a layer of a complex nitride or a complex carbonitride (composition formula: (Ti1-xAlx)(CyN1-y)) of chemically-vapor-deposited Ti and Al, a layer of a complex nitride or a complex carbonitride (composition formula: (Ti1-?-?Al?Mr?)(C?Ni1-?)) of Ti, Al, and Me, and a layer of a complex nitride or a complex carbonitride (composition formula: (Cr1-pAlp)(CqN1-q) of Cr and Al in a surface-coated cutting tool, some crystal grains that form the layer of a complex nitride or a complex carbonitride have cubic structures, and a predetermined average crystal grain misorientation and inclined angle frequency distribution are present in the crystal grains that have cubic structures.
    Type: Application
    Filed: October 31, 2016
    Publication date: November 1, 2018
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Sho TATSUOKA, Kenichi SATO, Kousuke YANAGISAWA, Shin NISHIDA
  • Publication number: 20180311745
    Abstract: In this surface-coated cutting tool, a hard coating layer includes at least a layer of a complex nitride or complex carbonitride expressed by a composition formula: (Cr1-xAlx)(CyN1-y) or a layer of a complex nitride or complex carbonitride expressed by a composition formula: (Ti1-?-?Al?Me?)(C?N1-?), crystal grains configuring the layer of a complex nitride or complex carbonitride having an NaCl type face-centered cubic structure are present, and predetermined average crystal grain misorientation and inclined angle frequency distribution are present in the crystal grains having an NaCl type face-centered cubic structure.
    Type: Application
    Filed: October 31, 2016
    Publication date: November 1, 2018
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Sho TATSUOKA, Kenichi SATO, Kousuke YANAGISAWA, Shin NISHIDA
  • Publication number: 20180257147
    Abstract: The hard coating layer of the cutting tool includes a complex nitride or complex carbonitride layer expressed by the composition formula: (Ti1-xAlx)(CyN1-y). xavg and yavg satisfy 0.60?xavg?0.95 and 0?yavg?0.005. xavg is an average content ratio of Al in a total amount of Ti and Al, and yavg is an average content ratio of C in a total amount of C and N. Some crystal grains composing the complex nitride or complex carbonitride layer have a cubic structure. In crystal grains having the cubic structure, the average crystal grain misorientaion is 1 degree or more; or 2 degrees or more, based on analysis of the polished surface perpendicular to a surface of the layer. A peak exists in 1-2 degrees of the average crystal grain misorientation in the frequency distribution of the average crystal grain misorientation and the area ratio.
    Type: Application
    Filed: August 31, 2016
    Publication date: September 13, 2018
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Sho TATSUOKA, Kenichi SATO, Kenji YAMAGUCHI
  • Patent number: 10050069
    Abstract: A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p?-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p?-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: August 14, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuhisa Yamamura, Kenichi Sato
  • Patent number: D830960
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: October 16, 2018
    Assignee: THE YOKOHAMA RUBBER CO., LTD
    Inventors: Kenichi Sato, Ryosuke Nukushina
  • Patent number: D852734
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: July 2, 2019
    Assignee: THE YOKOHAMA RUBBER CO., LTD.
    Inventors: Daisuke Tanaka, Kenichi Sato