Patents by Inventor Kenichi SHIMONO

Kenichi SHIMONO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10950467
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: March 16, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda, Kenichi Shimono
  • Patent number: 10636683
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: April 28, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda, Kenichi Shimono
  • Patent number: 10204766
    Abstract: Disclosed is an ion beam irradiation apparatus including: a plurality of plate-like grid electrodes arranged in a beam irradiation direction so as to overlap each other and each having a plurality of apertures; a power supply unit that applies a voltage to each of the grid electrodes; and a controller that controls the voltage applied to each of the grid electrodes by the power supply unit. The plurality of grid electrodes include first to fourth grid electrodes. Central axes of apertures of the first grid electrode and apertures of the second grid electrode are coaxial along the beam irradiation direction, and a central axis of apertures of the third grid electrode is offset in a direction orthogonal to the beam irradiation direction with respect to the central axes of the apertures of the first grid electrode and the second grid electrode.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: February 12, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihiro Umezawa, Mitsunori Ohata, Shinji Nagamachi, Kenichi Shimono
  • Publication number: 20180108516
    Abstract: Disclosed is an ion beam irradiation apparatus including: a plurality of plate-like grid electrodes arranged in a beam irradiation direction so as to overlap each other and each having a plurality of apertures; a power supply unit that applies a voltage to each of the grid electrodes; and a controller that controls the voltage applied to each of the grid electrodes by the power supply unit. The plurality of grid electrodes include first to fourth grid electrodes. Central axes of apertures of the first grid electrode and apertures of the second grid electrode are coaxial along the beam irradiation direction, and a central axis of apertures of the third grid electrode is offset in a direction orthogonal to the beam irradiation direction with respect to the central axes of the apertures of the first grid electrode and the second grid electrode.
    Type: Application
    Filed: October 17, 2017
    Publication date: April 19, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshihiro UMEZAWA, Mitsunori OHATA, Shinji NAGAMACHI, Kenichi SHIMONO
  • Publication number: 20170301568
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Application
    Filed: April 11, 2017
    Publication date: October 19, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA, Kenichi SHIMONO