Abstract: A head slider having a thin film magnetic head is mounted on a suspension assembly. The suspension assembly is comprised of a metal plate-like member, and a piezoelectric actuator for displacing the head slider relative to the suspension assembly. The piezoelectric actuator has a piezoelectric film, and a pair of electrode films placed so as to sandwich the piezoelectric film in between. The piezoelectric film and the pair of electrode films are formed in an order of one electrode film, the piezoelectric film, and the other electrode film on the plate-like member.

Abstract: An angular velocity sensor of a horizontally located type, which can easily remove the translational acceleration influence thereto from the lateral direction, is provided. It includes a fixed portion fixed to the surface of a sensor element supporting portion of a casing, an upper detection arm and a lower detection arm, each of them being connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the surface place of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion in such a manner as to form a pair of arms with the upper detection arm in between and extending in a direction parallel to the extending direction of the upper detection arm.

Abstract: Proposed is a horizontally located angular velocity sensor hardly affected by a translational acceleration in a lateral direction, and in which a fixed section is easily fixed. The angular velocity sensor includes a fixed section fixed on a support surface. On both sides of the fixed section, an arm section of an upper detection arm and a pair of upper drive arms extending along a plane parallel to the support surface, and an arm section of a lower detection arm and a pair of lower drive arms extending along the plane parallel to the support surface are coupled, respectively. The upper detection arm and the pair of upper drive arms are coupled without the fixed section in between, and the lower detection arm and the pair of lower drive arms are coupled without the fixed section in between.

Abstract: Provided is a thin-film piezoelectric element which reduces the influence of an oxide film left on the electrode film on the degradation of element characteristics, and a method of making the thin-film piezoelectric element. The thin-film piezoelectric element has ZrO2 as the main component of the outermost layer of the oxide film which covers the laminate. Young's modulus of the ZrO2 is 190 GPa, giving a significantly low value compared with Young's modulus of MgO, 245 GPa. Consequently, the influence of the oxide film on the reduction in the displacement magnitude of the piezoelectric film is smaller than the influence of the MgO thin film left in the conventional thin-film piezoelectric element. As a result, the thin-film piezoelectric element decreases the influence of the oxide film on the degradation of element characteristics compared with the conventional thin-film piezoelectric element.

Abstract: A thin film piezoelectric element has a laminate including a piezoelectric film and a pair of electrode films placed so as to sandwich the piezoelectric film in between, a resin film formed so as to cover the laminate, and an electrode formed on the resin film and electrically connected to the electrode film. The resin film is formed so that a thickness of a region where the electrode is formed is larger than a thickness of a region corresponding to a displaced portion of the laminate.

Abstract: The invention relates to a piezoelectric thin film vibrator having a piezoelectric device formed by using thin film formation technology, a fabrication method thereof, a driving apparatus and a piezoelectric motor using the same, and an object is to provide a piezoelectric thin film vibrator which can provide an excellent piezoelectric characteristic at low cost, a fabrication method thereof, a driving apparatus and a piezoelectric motor using the same. A piezoelectric thin film vibrator is configured to have a resonator which generates a flexure traveling wave, a lower electrode which is formed on the resonator, a piezoelectric thin film which is formed by epitaxial growth on the lower electrode, and a plurality of upper electrode parts which is formed on the piezoelectric thin film.

Abstract: The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A.

Abstract: Provided is a thin-film piezoelectric element which reduces the influence of an oxide film left on the electrode film on the degradation of element characteristics, and a method of making the thin-film piezoelectric element. The thin-film piezoelectric element has ZrO2 as the main component of the outermost layer of the oxide film which covers the laminate. Young's modulus of the ZrO2 is 190 GPa, giving a significantly low value compared with Young's modulus of MgO, 245 GPa. Consequently, the influence of the oxide film on the reduction in the displacement magnitude of the piezoelectric film is smaller than the influence of the MgO thin film left in the conventional thin-film piezoelectric element. As a result, the thin-film piezoelectric element decreases the influence of the oxide film on the degradation of element characteristics compared with the conventional thin-film piezoelectric element.

Abstract: A thin film piezoelectric element has a laminate including a piezoelectric film and a pair of electrode films placed so as to sandwich the piezoelectric film in between, a resin film formed so as to cover the laminate, and an electrode formed on the resin film and electrically connected to the electrode film. The resin film is formed so that a thickness of a region where the electrode is formed is larger than a thickness of a region corresponding to a displaced portion of the laminate.

Abstract: A head slider having a thin film magnetic head is mounted on a suspension assembly. The suspension assembly is comprised of a metal plate-like member, and a piezoelectric actuator for displacing the head slider relative to the suspension assembly. The piezoelectric actuator has a piezoelectric film, and a pair of electrode films placed so as to sandwich the piezoelectric film in between. The piezoelectric film and the pair of electrode films are formed in an order of one electrode film, the piezoelectric film, and the other electrode film on the plate-like member.