Patents by Inventor Kenichi Yoshino

Kenichi Yoshino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11832528
    Abstract: A magnetic memory device includes a substrate; a first magnetoresistive effect element; and a second magnetoresistive effect element provided at a side of the first magnetoresistive effect element opposite to a side of the first magnetoresistive effect element at which the substrate is provided. A heat absorption rate of the first magnetoresistive effect element is lower than a heat absorption rate of the second magnetoresistive effect element.
    Type: Grant
    Filed: April 11, 2022
    Date of Patent: November 28, 2023
    Assignee: Kioxia Corporation
    Inventors: Kazuya Sawada, Young Min Eeh, Eiji Kitagawa, Taiga Isoda, Tadaaki Oikawa, Kenichi Yoshino
  • Patent number: 11776603
    Abstract: A magnetoresistance memory device includes; first and second switching elements; first and second layer stacks respectively on the first and second switching elements; a first insulator on a side surface of the first layer stack; and a second insulator on a side surface of the second layer stack. Each of the first and second switching elements includes a variable resistance material. Each of the first and second layer stacks includes first and second ferromagnetic layers and an insulating layer between the first and second ferromagnetic layers. A narrowest interval between the first and second insulators is narrower than a narrowest interval between the first and second switching elements.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: October 3, 2023
    Assignees: Kioxia Corporation, SK HYNIX INC.
    Inventors: Naoki Akiyama, Kenichi Yoshino, Gayoung Ha
  • Publication number: 20230301116
    Abstract: According to one embodiment, a magnetic: memory device includes a stacked structure in which a magnetoresistance effect element and a switching element are stacked. The switching element is provided on a lower layer side of the magnetoresistance effect element, and when viewed in a stacking direction of the magnetoresistance effect element and the switching element, a pattern of the switching element is located inside a pattern of the magnetoresistance effect element.
    Type: Application
    Filed: September 12, 2022
    Publication date: September 21, 2023
    Applicants: Kioxia Corporation, SK hynix Inc.
    Inventors: Kenichi YOSHINO, Kazuya SAWADA, Naoki AKIYAMA, Takuya SHIMANO, Cha Deok DONG, Keorock CHOI, Bokyung JUNG, Gukcheon KIM
  • Publication number: 20230292529
    Abstract: According to one embodiment, a magnetic memory device includes a plurality of memory cells each including a magnetoresistance effect element and a switching element provided on a lower layer side of the magnetoresistance effect element and connected in series to the magnetoresistance effect element. The switching element includes a bottom electrode, a top electrode and a switching material layer provided between the bottom electrode and the top electrode, and the top electrode includes a first portion formed of a first material and a second portion provided on a lower layer side of the first portion and formed of a second material different from the first material.
    Type: Application
    Filed: September 12, 2022
    Publication date: September 14, 2023
    Applicant: Kioxia Corporation
    Inventors: Naoki AKIYAMA, Kenichi YOSHINO, Kazuya SAWADA, Hyungjun CHO, Takuya SHIMANO
  • Publication number: 20230269950
    Abstract: A magnetic memory device according to an embodiment includes a first ferromagnetic layer, a first nonmagnetic layer on the first ferromagnetic layer, a second ferromagnetic layer on the first nonmagnetic layer, an oxide layer on the second ferromagnetic layer, and a second nonmagnetic layer on the oxide layer. The oxide layer contains an oxide of a rare-earth element. The second nonmagnetic layer contains cobalt (Co), iron (Fe), boron (B), and molybdenum (Mo).
    Type: Application
    Filed: June 16, 2022
    Publication date: August 24, 2023
    Applicant: Kioxia Corporation
    Inventors: Tadaaki OIKAWA, Kenichi YOSHINO, Kazuya SAWADA, Takuya SHIMANO, Young Min EEH, Taiga ISODA
  • Publication number: 20230071013
    Abstract: A magnetoresistance memory device includes a first conductor, a first insulator covering a side surface of the first conductor, a second conductor on the first conductor that are substantially made of a non-magnetic non-nitrogen material. The device includes a variable resistance material, a third conductor, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer. The third conductor, a fourth conductor on the second ferromagnetic layer, and a second insulator covering side surfaces of the first and second ferromagnetic layers and insulating layer are substantially made of a non-nitrogen material. A third insulator is on the second insulator.
    Type: Application
    Filed: March 10, 2022
    Publication date: March 9, 2023
    Applicant: Kioxia Corporation
    Inventors: Kazuya SAWADA, Toshihiko NAGASE, Kenichi YOSHINO, Kazuhiro TOMIOKA, Naoki AKIYAMA, Takuya SHIMANO, Hisanori AIKAWA, Taichi IGARASHI
  • Publication number: 20230026414
    Abstract: According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.
    Type: Application
    Filed: October 3, 2022
    Publication date: January 26, 2023
    Applicants: KIOXIA CORPORATION, SK HYNIX INC.
    Inventors: Taiga ISODA, Eiji KITAGAWA, Young Min Min EEH, Tadaaki OIKAWA, Kazuya SAWADA, Kenichi YOSHINO, Jong Koo LIM, Ku Youl JUNG, Guk Cheon Cheon KIM
  • Patent number: 11495740
    Abstract: According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: November 8, 2022
    Assignees: KIOXIA CORPORATION, SK HYNIX INC.
    Inventors: Taiga Isoda, Eiji Kitagawa, Young Min Eeh, Tadaaki Oikawa, Kazuya Sawada, Kenichi Yoshino, Jong Koo Lim, Ku Youl Jung, Guk Cheon Kim
  • Publication number: 20220302373
    Abstract: According to one embodiment, a magnetic memory device comprises a first conductor, a second conductor, a third conductor, a fourth conductor, a first layer stack, a second layer stack, and a third layer stack. The first layer stack, the second layer stack, and the third layer stack are arranged between the first conductor and the third conductor, between the first conductor and the fourth conductor, and between the second conductor and the third conductor, respectively. A height from a first portion to a first plane and a height from a second portion to the first plane are within a first range, the first portion being between the first layer stack and the third layer stack, and the second portion being between the second layer stack and the third layer stack.
    Type: Application
    Filed: September 10, 2021
    Publication date: September 22, 2022
    Applicant: Kioxia Corporation
    Inventor: Kenichi YOSHINO
  • Publication number: 20220293850
    Abstract: According to one embodiment, a magnetoresistance memory device includes: a first conductor; a variable resistance material on a top surface of the first conductor; a second conductor on a top surface of the variable resistance material; a first insulator other than nitride on a top surface of the second conductor; a magnetoresistance effect element on a top surface of the first insulator; and a third conductor located on a side surface of the first insulator and extending on a side surface of the second conductor and a side surface of the magnetoresistance effect element.
    Type: Application
    Filed: September 10, 2021
    Publication date: September 15, 2022
    Applicant: Kioxia Corporation
    Inventors: Naoki AKIYAMA, Kenichi YOSHINO
  • Publication number: 20220238792
    Abstract: A magnetic memory device includes a substrate; a first magnetoresistive effect element; and a second magnetoresistive effect element provided at a side of the first magnetoresistive effect element opposite to a side of the first magnetoresistive effect element at which the substrate is provided. A heat absorption rate of the first magnetoresistive effect element is lower than a heat absorption rate of the second magnetoresistive effect element.
    Type: Application
    Filed: April 11, 2022
    Publication date: July 28, 2022
    Applicant: Kioxia Corporation
    Inventors: Kazuya SAWADA, Young Min EEH, Eiji KITAGAWA, Taiga ISODA, Tadaaki OIKAWA, Kenichi YOSHINO
  • Patent number: 11329215
    Abstract: According to one embodiment, a magnetic memory device includes a substrate, a first layer stack, and a second layer stack at a same side of the first layer stack relative to the substrate, and farther than the first layer stack from the substrate. Each of the first and second layer stack includes a reference layer, a tunnel barrier layer provided in a direction relative to the reference layer, the direction being perpendicular to the substrate, a storage layer provided in the direction relative to the tunnel barrier layer, and a first nonmagnetic layer provided in the direction relative to the storage layer. A heat absorption rate of the first nonmagnetic layer of the first layer stack is lower than a heat absorption rate of the first nonmagnetic layer of the second layer stack.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: May 10, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Kazuya Sawada, Young Min Eeh, Eiji Kitagawa, Taiga Isoda, Tadaaki Oikawa, Kenichi Yoshino
  • Patent number: 11316095
    Abstract: According to one embodiment, a magnetic device includes a layer stack. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, a first nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer. The first ferromagnetic layer is interposed between the second nonmagnetic layer and the first nonmagnetic layer. The first nonmagnetic layer and the second nonmagnetic layer contain a magnesium oxide (MgO). The first ferromagnetic layer contains a higher amount of boron (B) at an interface with the first nonmagnetic layer than at an interface with the second nonmagnetic layer.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: April 26, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Tadaaki Oikawa, Young Min Eeh, Kenichi Yoshino, Eiji Kitagawa, Kazuya Sawada, Taiga Isoda
  • Publication number: 20220093146
    Abstract: A magnetoresistance memory device includes; first and second switching elements; first and second layer stacks respectively on the first and second switching elements; a first insulator on a side surface of the first layer stack; and a second insulator on a side surface of the second layer stack. Each of the first and second switching elements includes a variable resistance material. Each of the first and second layer stacks includes first and second ferromagnetic layers and an insulating layer between the first and second ferromagnetic layers. A narrowest interval between the first and second insulators is narrower than a narrowest interval between the first and second switching elements.
    Type: Application
    Filed: June 16, 2021
    Publication date: March 24, 2022
    Applicants: Kioxia Corporation, SK hynix Inc.
    Inventors: Naoki AKIYAMA, Kenichi YOSHINO, Gayoung HA
  • Publication number: 20220093847
    Abstract: In general, according to one embodiment, a magnetoresistance memory device includes: a first conductor; a silicon oxide on the first conductor; a second conductor; a first layer stack on the second conductor. The silicon oxide includes a dopant and has a first part on the first conductor and a second part adjacent to the first part on the first conductor. The second part is higher than the first part. A concentration of the dopant of the second part being higher than a concentration of the dopant of the first part. The second conductor is on the second part of the silicon oxide. The first layer stack includes a first magnetic layer, a second magnetic layer, and a first insulating layer between the first magnetic layer and the second magnetic layer.
    Type: Application
    Filed: September 10, 2021
    Publication date: March 24, 2022
    Applicant: Kioxia Corporation
    Inventors: Takao OCHIAI, Kenichi YOSHINO, Kazuya SAWADA, Naoki AKIYAMA
  • Publication number: 20220085103
    Abstract: According to one embodiment, a magnetic memory device includes: a first interconnect extending in a first direction; a switching element provided on the first interconnect; a conductor provided on the switching element; a magnetoresistance effect element provided on the conductor; and an insulating layer provided in a layer in which the switching element is provided. An area of a first principal surface of the switching element that faces the conductor is smaller than that of a second principal surface of the conductor that faces the switching element.
    Type: Application
    Filed: March 12, 2021
    Publication date: March 17, 2022
    Applicant: Kioxia Corporation
    Inventors: Kenichi YOSHINO, Eiji KITAGAWA, Naoki AKIYAMA
  • Patent number: 11217288
    Abstract: According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: January 4, 2022
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Kazuya Sawada, Young Min Eeh, Tadaaki Oikawa, Kenichi Yoshino, Eiji Kitagawa, Taiga Isoda
  • Patent number: 11201189
    Abstract: A semiconductor device includes a first rare earth oxide layer, a first magnetic layer adjacent to the first rare earth oxide layer, a second rare earth oxide layer, a second magnetic layer adjacent to the second rare earth oxide layer, and a nonmagnetic layer. The first magnetic layer is disposed between the first rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The second magnetic layer is disposed between the second rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer.
    Type: Grant
    Filed: September 9, 2018
    Date of Patent: December 14, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Youngmin Eeh, Toshihiko Nagase, Daisuke Watanabe, Kazuya Sawada, Kenichi Yoshino, Tadaaki Oikawa, Hiroyuki Ohtori
  • Patent number: 11127445
    Abstract: According to one embodiment, a magnetic device includes a magnetic tunnel junction element, the magnetic tunnel junction element comprising: a first structure having ferromagnetism; a second structure having ferromagnetism; and a first nonmagnet provided between the first structure and the second structure; wherein: the first structure and the second structure are antiferromagnetically coupled via the first nonmagnet; and the first structure includes a first ferromagnetic nitride.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: September 21, 2021
    Assignees: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.
    Inventors: Young Min Eeh, Taeyoung Lee, Kazuya Sawada, Eiji Kitagawa, Taiga Isoda, Tadaaki Oikawa, Kenichi Yoshino
  • Publication number: 20210083170
    Abstract: According to one embodiment, a magnetic memory device includes a substrate, a first layer stack, and a second layer stack at a same side of the first layer stack relative to the substrate, and farther than the first layer stack from the substrate. Each of the first and second layer stack includes a reference layer, a tunnel barrier layer provided in a direction relative to the reference layer, the direction being perpendicular to the substrate, a storage layer provided in the direction relative to the tunnel barrier layer, and a first nonmagnetic layer provided in the direction relative to the storage layer. A heat absorption rate of the first nonmagnetic layer of the first layer stack is lower than a heat absorption rate of the first nonmagnetic layer of the second layer stack.
    Type: Application
    Filed: March 12, 2020
    Publication date: March 18, 2021
    Applicant: KIOXIA CORPORATION
    Inventors: Kazuya SAWADA, Young Min EEH, Eiji KITAGAWA, Taiga ISODA, Tadaaki OIKAWA, Kenichi YOSHINO