Abstract: A toroidal continuously variable transmission comprises an input disc and an output disc which are disposed to face each other; a power roller which is tiltably disposed between the input disc and the output disc and transmits a rotational driving force of the input disc to the output disc in a transmission ratio corresponding to a tilt motion angle of the power roller; a trunnion including a base on which the power roller is rotatably mounted, and a pair of side walls provided on both sides of the power roller in an axial direction of a tilt motion shaft of the power roller in such a manner that the pair of side walls extend upward from the base and face a peripheral surface of the power roller, and a beam mounted on the pair of side walls, the beam extending in the axial direction of the tilt motion shaft, on a side opposite to the base when viewed from a position of the power roller, wherein the beam includes a pair of contact portions, each of the contact portions being configured to contact an end surfac

Abstract: An electric power generating device (1) capable of suppressing an increase of a frontal surface area of an aircraft engine includes a transmission (22) connected with a rotary shaft (9) of the engine (E), an electric power generator (34) driven by an output of the transmission (22), an input shaft (27) having a shaft axis extending in a direction crossing the rotary shaft (9) and connected with the rotary shaft (9), and a transmitting mechanism (21) connected with the input shaft (27) to drive the transmission (22) about an axis extending in a direction perpendicular to the input shaft (27). The transmission (22) and the electric power generator (34) are disposed spaced a distance from each other in a direction circumferentially of the rotary shaft (9).

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

Abstract: A controller for controlling electrical devices in a dwelling is configured to display an energy-saving mode setting screen on a display that is a touch panel or the like in accordance with an operation by a user. Then, the controller is configured to receive a designation of a condition for an energy-saving control on the electrical devices in the dwelling on the energy-saving mode setting screen. Then, the controller is configured to set the respective energy-saving modes of the electrical devices via a home network based on the received condition.

Abstract: A nitride semiconductor device is provided that includes: a substrate; an n-type drift layer above the front surface of the substrate; a p-type base layer above the n-type drift layer; a gate opening in the base layer that reaches the drift layer; an n-type channel forming layer that covers the gate opening and has a channel region; a gate electrode above a section of the channel forming layer in the gate opening; an opening that is separated from the gate electrode and reaches the base layer; an opening formed in a bottom surface of said opening and reaching the drift layer; a source electrode covering the openings; and a drain electrode on the rear surface of the substrate.

Abstract: A nitride semiconductor device includes: a substrate of a first conductivity type having a first surface and a second surface on a side of the substrate opposite the first surface; a first nitride semiconductor layer of the first conductivity type which is disposed on the first surface of the substrate and includes an acceptor impurity; a second nitride semiconductor layer of a second conductivity type disposed on the first nitride semiconductor layer, the second conductivity type being opposite to the first conductivity type; a first electrode disposed on the second surface of the substrate; a second electrode disposed on the first nitride semiconductor layer; and a gate electrode disposed on the second nitride semiconductor layer.

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

Abstract: To provide an aircraft engine in which an accessory can be directly supported with no accessory gearbox intervening to thereby suppress an increase in size thereof, the aircraft engine (E) includes a take-out shaft (11) having a first end portion, connected with an engine rotary shaft (9) and extending in a radially outward direction, and also having a second end portion connected with an accessory (1), and a mounting pad (12) provided in an engine main body (EB) and to which the accessory (1) is fitted. The mounting pad (12) forms an outer perimeter of an opening (48) through which the take-out shaft (11) extends. The opening (48) is sealed by a covering (47), through which the take-out shaft (1) extends, and a sealing member (49) to seal between the covering (47) and the take-out shaft (11).

Abstract: A light source and corresponding method of manufacturing are provided. The light source includes a base. A first light-emitting element is disposed on the base and emits first emission light having a first spectrum. A second light-emitting element is disposed on the base adjacent to the first light-emitting element. The second light-emitting element emits second emission light having a second spectrum different from the first spectrum. A reflector is disposed between the first light-emitting element and the second light-emitting element. The reflector reflects, among components of the first emission light, a component of the first emission light that travels toward the second light-emitting element.

Abstract: An LED module includes a submount having a face in a thickness direction thereof, an LED chip bonded to the face of the submount with a first bond, and a patterned wiring circuit electrically connected to the LED chip. The first bond transmits light emitted from the LED chip. The submount is a light-transmissive member having light diffusing properties, and a planar size larger than a planar size of the LED chip. The patterned wiring circuit is provided on the face of the submount so as not to overlap the LED chip. The submount is constituted by a plurality of light-transmissive layers which are stacked in the thickness direction and have different optical properties so that a light-transmissive layer of the plurality of light-transmissive layers which is farther from the LED chip is higher in reflectance in a wavelength range of the light emitted from the LED chip.

Abstract: A light-emitting apparatus includes: a flexible base body; and a light-emitting component which is attached to the base body, has a form which changes flexibly following a change in the firm of the base body, and includes: a light guide which guides laser light that enters one end of the light guide; a leaking means for causing part of the laser light guided by the light guide to leak out of the light guide in a direction which crosses a light-guiding direction; and a first light-emitter which extends along the light-guiding direction and emits light based on the part of the laser light that is leaked out of the light guide by the leaking means.

Abstract: A field-effect transistor includes a codoped layer made of AlxGa1-xN (0?x?1) and formed on a p-type Si substrate, a GaN layer formed on the codoped layer, and an AlGaN layer formed on the GaN layer. The codoped layer contains C and Si as impurity elements. The impurity concentration of C in the codoped layer is equal to or higher than 5×1017/cm3. The impurity concentration of Si in the codoped layer is lower than the impurity concentration of C. The impurity concentration of C in the GaN layer is equal to or lower than 1×1017/cm3. The thickness of the GaN layer is equal to or greater than 0.75 ?m.

Abstract: Provided is a method for manufacturing a titania coated alumina fiber aggregate which includes the steps of: forming an aluminum fiber aggregate where aluminum fibers are aggregated with density per unit volume of 0.5 g/cm3 to 3 g/cm3; forming an alumina fiber aggregate where an oxide film having a film thickness of 50 nm or more is formed on alumina fibers; and forming a titania coated alumina fiber aggregate where a titania thin film is formed on alumina fibers.

Abstract: In a continuously variable transmission including: a first transmission unit including a first input disc and a first output disc disposed coaxially and a power roller tiltably interposed between these discs; and a second transmission unit disposed coaxially with the first transmission unit, including a second input disc and a second output disc disposed coaxially and a second power roller tiltably interposed between these discs, and disposed such that a back surface of the second input disc is opposed to a back surface of the first input disc, a tubular back surface cylinder wall is provided on each of the back surfaces of the first input disc and the second input disc so as to project therefrom.

Abstract: In a continuously variable transmission including: a first transmission unit including a first input disc and a first output disc; and a second transmission unit disposed such that a back surface of a second input disc is opposed to a back surface of the first input disc, an input gear shroud covering an input gear disposed between the back surfaces of the first and second input discs, a first input disc side surface shroud integrally provided to a first input disc support supporting the first input disc on a housing of the continuously variable transmission, and a second input disc side surface shroud integrally provided to a second input disc support supporting the second input disc on the housing of the continuously variable transmission, are provided.

Abstract: In a toroidal continuously variable transmission including at least one transmission unit including: an input disc and an output disc disposed coaxially; and a power roller tiltably interposed between the input disc and the output disc and configured to transmit a driving force from the input disc to the output disc, an integrally rotating member disposed so as to be spaced apart in an axial direction from at least one disc of the input disc and the output disc of each transmission unit and configured to rotate together with the at least one disc, and an annular interposed member provided between the at least one disc and the integrally rotating member and configured to rotate together with the at least one disc, are provided, and the interposed member is formed with a balance adjustment portion capable of adjusting weight balance in a circumferential direction.

Abstract: A power generation unit is connected with an engine rotary shaft via an accessory gearbox. A rotor extends through the accessory gearbox and a drive gear is disposed at an intermediate portion of the rotor for driving the latter. Permanent magnet elements are mounted on opposite side portions with the intermediate portion intervening therebetween, and stator coils are disposed so as to confront respective outer peripheries of the permanent magnet elements.

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

Abstract: A field effect transistor having a reduced sheet resistance is provided. A channel layer, a first spacer layer, a second spacer layer, a first electronic barrier layer, and a second electronic barrier layer are sequentially grown on the main surface of a substrate. A gate recess is created, and then an ion implanted section is formed. A third electronic barrier layer and a p-type layer are formed by a metalorganic chemical vapor deposition (MOCVD) method. The p-type layer except a portion at the gate recess is removed. B ions are implanted in the regrown third electronic barrier layer to reform the ion implanted section. A source electrode and a drain electrode are formed on the third electronic barrier layer. Then a gate electrode is formed on the p-type layer.

Abstract: A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate, and which has a C-plane as a main surface; a second nitride semiconductor layer which is formed on the first nitride semiconductor layer, and which has p-type conductivity; and a first opening which is formed in the second nitride semiconductor layer, and which reaches the first nitride semiconductor layer. The nitride semiconductor device further includes a third nitride semiconductor layer which is formed so as to cover the first opening in the second nitride semiconductor layer; a first electrode which is formed on the third nitride semiconductor layer so as to include a region of the first opening; and a second electrode which is formed on the rear surface of the substrate.