Abstract: A dust collector includes a main-body housing and a motor assembly disposed in the main-body housing. The motor assembly includes a blower fan, which is disposed in the interior of the main-body housing; and a suction motor, which rotates the blower fan. The motor assembly generates suction force at a suction port, which fluidly communicates with the interior of the main-body housing. At least first and second air-exhaust passageways are respectively in the up-down direction in the interior of the main-body housing and through which air exhausted from the motor assembly flows.

Abstract: A semiconductor device includes a semiconductor chip, first and second conductive members disposed on opposite sides of the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a surface electrode and gate wirings. The semiconductor substrate has active regions formed with elements, and an inactive region not formed with an element. The inactive region includes an inter-inactive portion disposed between at least two active regions and an outer peripheral inactive portion disposed on an outer periphery of the at least two active regions. The surface electrode is disposed to continuously extend above the at least two active regions and the inter-inactive portion. The gate wirings are disposed above the inactive region, and include a first gate wiring disposed on an outer periphery of the surface electrode, and a second gate electrode disposed at a position facing the surface electrode.

Abstract: A semiconductor device includes, a semiconductor element, a wiring member arranged to sandwich the semiconductor element, a sealing resin body. The semiconductor element has an SBD formed thereon with a base material of SiC which is a wide band gap semiconductor. The semiconductor element has two main electrodes on both surfaces. The wiring member includes (i) a heat sink electrically connected to a first main electrode and (ii) a heat sink and a terminal electrically connected to a second main electrode. The semiconductor device further includes an insulator. The insulator has a non-conducting element made of silicon. The insulator has joints on both of two surfaces for mechanical connection of the heat sinks.

Abstract: A gas supply system includes: high-pressure tanks having at least different longitudinal lengths; supply pipes each connected to corresponding one of the high-pressure tanks; a supply-side manifold to which the supply pipes are connected; solenoid valves disposed in the respective supply pipes; a first pressure sensor configured to acquire a pressure related to an internal pressure of the high-pressure tanks; a second pressure sensor configured to acquire a pressure at the supply-side manifold; and a control device that controls the solenoid valve corresponding to the high-pressure tank, among the high-pressure tanks, having the largest ratio of the longitudinal length to a short-side width, to open first when a value obtained by subtracting the pressure detected by the second pressure sensor from the pressure detected by the first pressure sensor is larger than a threshold at the time of activation of the gas supply system.

Abstract: A semiconductor device includes a semiconductor chip, first and second conductive members disposed on opposite sides of the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a surface electrode and gate wirings. The semiconductor substrate has active regions formed with elements, and an inactive region not formed with an element. The inactive region includes an inter-inactive portion disposed between at least two active regions and an outer peripheral inactive portion disposed on an outer periphery of the at least two active regions. The surface electrode is disposed to continuously extend above the at least two active regions and the inter-inactive portion. The gate wirings are disposed above the inactive region, and include a first gate wiring disposed on an outer periphery of the surface electrode, and a second gate electrode disposed at a position facing the surface electrode.

Abstract: A gas supply system includes: high-pressure tanks having at least different longitudinal lengths; supply pipes each connected to corresponding one of the high-pressure tanks; a supply-side manifold to which the supply pipes are connected; solenoid valves disposed in the respective supply pipes; a first pressure sensor configured to acquire a pressure related to an internal pressure of the high-pressure tanks; a second pressure sensor configured to acquire a pressure at the supply-side manifold; and a control device that controls the solenoid valve corresponding to the high-pressure tank, among the high-pressure tanks, having the largest ratio of the longitudinal length to a short-side width, to open first when a value obtained by subtracting the pressure detected by the second pressure sensor from the pressure detected by the first pressure sensor is larger than a threshold at the time of activation of the gas supply system.

Abstract: A semiconductor device includes, a semiconductor element, a wiring member arranged to sandwich the semiconductor element, a sealing resin body. The semiconductor element has an SBD formed thereon with a base material of SiC which is a wide band gap semiconductor. The semiconductor element has two main electrodes on both surfaces. The wiring member includes (i) a heat sink electrically connected to a first main electrode and (ii) a heat sink and a terminal electrically connected to a second main electrode. The semiconductor device further includes an insulator. The insulator has a non-conducting element made of silicon. The insulator has joints on both of two surfaces for mechanical connection of the heat sinks.

Abstract: A semiconductor device turns on and off a power switching device having a gate terminal and output terminals between which an output current is produced by a gate voltage applied to the gate terminal. The semiconductor device includes: an output current detector detecting a current value correlated with the output current; a voltage detector detecting a voltage across the output terminals of the power switching device; a clamp circuit clamping the gate voltage at a predetermined value; and a controller controlling the clamp circuit to adjust the gate voltage based on the voltage detected by the voltage detector. The controller controls the clamp circuit to set the gate voltage to be at a minimum voltage according to the detected voltage to cause the output current to be larger than a threshold current required for detecting the short circuit in the power switching device.

Abstract: A fuel gas storage and supply system that supplies fuel gas to a fuel cell includes: a filling port including a first check valve; a decompression valve; a fuel gas pipe; an upstream shut valve disposed between an upstream gas tank and the filling port; a second check valve disposed between the filling port and the upstream shut valve; a pressure sensor disposed between the upstream shut valve and the decompression valve; and a controller configured to control opening and closing of the upstream shut valve using a measured pressure value of the pressure sensor. The controller repeatedly acquires the measured pressure value from the pressure sensor over time when the upstream gas tank is filled with the fuel gas via the filling port and closes the upstream shut valve when an increasing rate of the measured pressure value is less than a predetermined increasing rate threshold value.

Abstract: The gas filling system includes: a vehicle that includes a tank and a first communication instrument; and a gas station that includes a second communication instrument. The vehicle includes: a first temperature sensor that acquires temperature information of the gas stored in the tank; a second temperature sensor that acquires temperature information outside the tank; and a controller. The controller permits transmission of the temperature information of the first temperature sensor to the second communication instrument on the condition that the absolute value of a difference between an indicated value of the first temperature sensor and an indicated value of the second temperature sensor is smaller than or equal to a predetermined value, and prohibits transmission of the temperature information of the first temperature sensor to the second communication instrument on the condition that the absolute value of the difference is larger than the predetermined value.

Abstract: A semiconductor device turns on and off a power switching device having a gate terminal and output terminals between which an output current is produced by a gate voltage applied to the gate terminal. The semiconductor device includes: an output current detector detecting a current value correlated with the output current; a voltage detector detecting a voltage across the output terminals of the power switching device; a clamp circuit clamping the gate voltage at a predetermined value; and a controller controlling the clamp circuit to adjust the gate voltage based on the voltage detected by the voltage detector. The controller controls the clamp circuit to set the gate voltage to be at a minimum voltage according to the detected voltage to cause the output current to be larger than a threshold current required for detecting the short circuit in the power switching device.

Abstract: A handrail friction checking device comprises a handrail gripper for gripping the handrail and movable together with the handrail, a spring with one end of the spring being fixed and the other end being connected to the handrail gripper so that the spring can apply a spring force which is opposed to the direction of handrail movement to the handrail gripper when the handrail gripper moves along with the handrail and a sensor which is disposed in a way that it is distanced from the handrail gripper and can be triggered by the handrail gripper when the handrail gripper moves along with the handrail.

Abstract: A fuel cell system comprises a fuel cell, a tank, a 1st pressure sensor that measures a fill-time pressure, a 2nd pressure sensor that measures a supply piping pressure, a temperature sensor that measures an internal temperature of the tank; and a controller that, when the fuel cell starts, derives an estimated pressure value of the supply piping pressure based on a 1st pressure value that shows the fill-time pressure, the internal temperature when the 1st pressure value was measured, and the internal temperature when the supply piping pressure was measured, and that detects as the supply piping pressure the lower value among the estimated pressure value and the 2nd pressure value that shows the measured supply piping pressure.

Abstract: A DC-DC converter includes a transformer, a switching circuit provided on the primary side of the transformer, and a rectifier circuit provided on the secondary side of the transformer. The rectifier circuit includes a first rectifier part that is serially connected body of a first transistor and a second transistor having a first electrode connected to a second electrode of the first transistor. The first and second transistors each include a parasitic diode connected forward between the second and first electrode, and the withstanding voltage between the first and second electrodes of the first transistor is higher than the withstanding voltage between the first and second electrodes of the second transistor.

Abstract: A handrail friction checking device comprises a handrail gripper for gripping the handrail and movable together with the handrail, a spring with one end of the spring being fixed and the other end being connected to the handrail gripper so that the spring can apply a spring force which is opposed to the direction of handrail movement to the handrail gripper when the handrail gripper moves along with the handrail and a sensor which is disposed in a way that it is distanced from the handrail gripper and can be triggered by the handrail gripper when the handrail gripper moves along with the handrail.

Abstract: A fuel gas storage and supply system that supplies fuel gas to a fuel cell includes: a filling port including a first check valve; a decompression valve; a fuel gas pipe; an upstream shut valve disposed between an upstream gas tank and the filling port; a second check valve disposed between the filling port and the upstream shut valve; a pressure sensor disposed between the upstream shut valve and the decompression valve; and a controller configured to control opening and closing of the upstream shut valve using a measured pressure value of the pressure sensor. The controller repeatedly acquires the measured pressure value from the pressure sensor over time when the upstream gas tank is filled with the fuel gas via the filling port and closes the upstream shut valve when an increasing rate of the measured pressure value is less than a predetermined increasing rate threshold value.

Abstract: The switching power supply device is provided with a high-withstand voltage first transistor, a first electrode of which being connected to a first node; a low-withstand voltage second transistor, a first electrode of which being connected to a second electrode of the first transistor, and a second electrode of which being connected to a second node; and a drive circuit. Each of the first and second transistors has a parasitic diode connected in the forward direction between the second and first electrodes. The drive circuit, in a case where electrical current is to flow from the first node to the second node, turns on the first and second transistors, and, in a case where electrical current is to flow from the second node to the first node, turns on the first transistor, and turns off the second transistor.

Abstract: Provided is a high-pressure tank that includes a tank main body including a mouthpiece, a valve fitted to the mouthpiece, and a pipe extending from the valve in an axially inward direction of the tank main body and for ejecting a gas into the tank main body. The pipe includes an ejection nozzle provided at an end of the pipe and for ejecting the gas, a first bent portion located between the ejection nozzle and the valve and extending in a direction inclined relative to an axial direction of the tank main body, and a second bent portion having the ejection nozzle and extending in a direction inclined relative to the axial direction. One of an inclination angle of the first bent portion relative to the axial direction and an inclination angle of the second bent portion relative to the axial direction is larger than 0° and not larger than 90°, and the other is not smaller than ?0° and smaller than 0°, when the pipe is viewed in a direction perpendicular to the axial direction.

Abstract: A drive device includes a main power supply coupled to a driver circuit for controlling on and off of a switching element; a first capacitor coupled, in parallel with the driver circuit, to the main power supply and disposed with no element other than wiring interposed between the first capacitor and the driver circuit; and an impedance element coupled, in series with the first capacitor and the driver circuit, to the main power supply and disposed with no element other than wiring interposed between the impedance element and the first capacitor and between the impedance element and the driver circuit.

Abstract: A semiconductor device includes a high breakdown voltage, high Gm first transistor and a low breakdown voltage, low Gm second transistor connected in series between first and second nodes, and a low breakdown voltage, high Gm third transistor connected to the second transistor in parallel. When the second transistor is turned on, the first transistor turns on, and furthermore, when the third transistor is turned on, an electrically conducting state is established between the first and second nodes. The second, low breakdown voltage transistor is turned on to turn on the first, high breakdown voltage transistor, and a turn-on time with only limited variation can be achieved.