Patents by Inventor Kenji Nakashima

Kenji Nakashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11742461
    Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a second layer in contact with the second electrodes of the semiconductor element and a first layer located on a side opposite to the second electrodes, an average crystal grain size of crystals included in the second layer is larger than an average crystal grain size of crystals included in the first layer, and the first layer is spaced apart from the second electrodes of the semiconductor element.
    Type: Grant
    Filed: July 8, 2022
    Date of Patent: August 29, 2023
    Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
    Inventors: Masanori Hiroki, Shigeo Hayashi, Kenji Nakashima, Toshiya Fukuhisa, Keimei Masamoto, Atsushi Yamada
  • Patent number: 11629827
    Abstract: An illumination device includes a first light source that emits first light having a first peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum; a second light source that emits second light having a second peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum, the second light illuminating a position identical to a position illuminated by the first light; and a detection device that detects whether an object is present at a given position, wherein the second peak wavelength is shorter than the first peak wavelength, and a luminous flux of the first light is decreased and a luminous flux of the second light is increased when the detection device detects that the object is present at the predetermined position.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: April 18, 2023
    Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
    Inventors: Atsuhiro Hori, Kenji Nakashima, Yasutoshi Kawaguchi, Hidemi Takeishi, Masanori Michimori, Shigeo Hayashi
  • Publication number: 20220344547
    Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a second layer in contact with the second electrodes of the semiconductor element and a first layer located on a side opposite to the second electrodes, an average crystal grain size of crystals included in the second layer is larger than an average crystal grain size of crystals included in the first layer, and the first layer is spaced apart from the second electrodes of the semiconductor element.
    Type: Application
    Filed: July 8, 2022
    Publication date: October 27, 2022
    Inventors: Masanori HIROKI, Shigeo HAYASHI, Kenji NAKASHIMA, Toshiya FUKUHISA, Keimei MASAMOTO, Atsushi YAMADA
  • Publication number: 20220316662
    Abstract: An illumination device includes a first light source that emits first light having a first peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum; a second light source that emits second light having a second peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum, the second light illuminating a position identical to a position illuminated by the first light; and a detection device that detects whether an object is present at a given position, wherein the second peak wavelength is shorter than the first peak wavelength, and a luminous flux of the first light is decreased and a luminous flux of the second light is increased when the detection device detects that the object is present at the predetermined position.
    Type: Application
    Filed: June 21, 2022
    Publication date: October 6, 2022
    Inventors: Atsuhiro Hori, Kenji NAKASHIMA, Yasutoshi KAWAGUCHI, Hidemi TAKEISHI, Masanori MICHIMORI, Shigeo HAYASHI
  • Patent number: 11417805
    Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.
    Type: Grant
    Filed: October 20, 2021
    Date of Patent: August 16, 2022
    Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
    Inventors: Masanori Hiroki, Shigeo Hayashi, Kenji Nakashima, Toshiya Fukuhisa, Keimei Masamoto, Atsushi Yamada
  • Publication number: 20220052231
    Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.
    Type: Application
    Filed: October 20, 2021
    Publication date: February 17, 2022
    Inventors: Masanori HIROKI, Shigeo HAYASHI, Kenji NAKASHIMA, Toshiya FUKUHISA, Keimei MASAMOTO, Atsushi YAMADA
  • Patent number: 11183615
    Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: November 23, 2021
    Assignee: NUVOTON TECHNOLOGY CORPORATION JAPAN
    Inventors: Masanori Hiroki, Shigeo Hayashi, Kenji Nakashima, Toshiya Fukuhisa, Keimei Masamoto, Atsushi Yamada
  • Publication number: 20200365410
    Abstract: An etching device may include a reservoir storing an etchant, a support member configured to support the semiconductor wafer in a state where a first surface of the semiconductor wafer is immersed in the etchant, a light source configured to irradiate the first surface of the semiconductor wafer supported by the support member with light emitted from the light source, an electrode disposed in the reservoir, and a power source configured to apply a current between the electrode and the semiconductor wafer supported by the support member, the current changing between a first current value and a second current value larger than the first current value.
    Type: Application
    Filed: April 2, 2020
    Publication date: November 19, 2020
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Daisuke SUGIZAKI, Kunio AKEDO, Koji NODA, Eiko ISHII, Kenji NAKASHIMA
  • Publication number: 20200365771
    Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.
    Type: Application
    Filed: December 20, 2018
    Publication date: November 19, 2020
    Applicants: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD., PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
    Inventors: Masanori HIROKI, Shigeo HAYASHI, Kenji NAKASHIMA, Toshiya FUKUHISA, Keimei MASAMOTO, Atsushi YAMADA
  • Publication number: 20200279760
    Abstract: An etching device may include a reservoir storing an etchant, a support member configured to rotatably support the semiconductor wafer in a state where a first surface of the semiconductor wafer is immersed in the etchant, a light source configured to emit light to the first surface of the semiconductor wafer, a counter electrode disposed in the reservoir and disposed between the support member and the light source, and a power source configured to apply a voltage between the semiconductor wafer and the counter electrode. When the light source emits light, a lighted area by the light and a shadow of the counter electrode may be projected onto the first surface of the semiconductor wafer, and when the semiconductor wafer is rotated by the support member, at least a part of the first surface may pass both the lighted area and the shadow.
    Type: Application
    Filed: February 14, 2020
    Publication date: September 3, 2020
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Daisuke SUGIZAKI, Eiko Ishii, Kenji Nakashima, Kunio Akedo, Koji Noda
  • Patent number: 10435808
    Abstract: An etching apparatus having a liquid bath storing an etching liquid, a substrate installation part capable of supporting the semiconductor substrate in vertical placement at a position at which a treatment surface of the semiconductor substrate is immersed in the etching liquid, a sample electrode provided at the substrate installation part and electrically connected to the semiconductor substrate, a counter electrode disposed at a position at which the counter electrode is immersed in the etching liquid in the liquid bath, a light source irradiating the treatment surface of the semiconductor substrate with light, and an irradiation window provided between the treatment surface of the semiconductor substrate and the light source and at a position separated from the semiconductor substrate in a horizontal direction.
    Type: Grant
    Filed: September 21, 2017
    Date of Patent: October 8, 2019
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Eiko Ishii, Yumi Saito, Teruhisa Akashi, Kenji Nakashima
  • Publication number: 20180112325
    Abstract: An etching apparatus having a liquid bath storing an etching liquid, a substrate installation part capable of supporting the semiconductor substrate in vertical placement at a position at which a treatment surface of the semiconductor substrate is immersed in the etching liquid, a sample electrode provided at the substrate installation part and electrically connected to the semiconductor substrate, a counter electrode disposed at a position at which the counter electrode is immersed in the etching liquid in the liquid bath, a light source irradiating the treatment surface of the semiconductor substrate with light, and an irradiation window provided between the treatment surface of the semiconductor substrate and the light source and at a position separated from the semiconductor substrate in a horizontal direction.
    Type: Application
    Filed: September 21, 2017
    Publication date: April 26, 2018
    Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Eiko ISHII, Yumi SAITO, Teruhisa AKASHI, Kenji NAKASHIMA
  • Patent number: 9670974
    Abstract: A device for controlling a start of a vehicle includes a rotation speed obtaining unit that obtains an actual engine rotation speed of the engine, a target rotation speed computing unit that computes a target rotation speed of the engine in the slip control, a control target value computing unit that computes a control target value, which is a target value for controlling the engine rotation speed to the target rotation speed based on the actual engine rotation speed and the target rotation speed, and an instruction value computing unit that computes an instruction value for the lock-up clutch necessary to control the engine rotation speed to the control target value based on the control target value.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: June 6, 2017
    Assignees: JATCO Ltd, NISSAN MOTOR CO., LTD.
    Inventors: Takateru Kawaguchi, Akito Suzuki, Kenji Nakashima, Aki Hayakawa, Yasuhiro Endo, Hiroshi Sekiya, Akihiro Tanabe, Tetsuya Izumi, Masaaki Uchida
  • Patent number: 9523400
    Abstract: First temporary capacity reduction control that when acceleration ON is judged during coasting lock-up, brings lock-up clutch (20) into slip state by decreasing torque transmission capacity of lock-up clutch and subsequently returns lock-up clutch to lock-up state by increasing torque transmission capacity is executed. Control unit performing second temporary capacity reduction control that when return of accelerator pedal depression is judged during the progress of returning to lock-up state, decreases torque transmission capacity again and subsequently returns lock-up clutch to lock-up state by increasing torque transmission capacity is provided. In second temporary capacity reduction control, torque transmission capacity is decreased with predetermined torque transmission capacity by which lock-up clutch is not fully disengaged being lower limit value.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: December 20, 2016
    Assignees: JATCO LTD, NISSAN MOTOR CO., LTD.
    Inventors: Yasuhiro Endo, Kouji Saitou, Kenji Nakashima, Akito Suzuki, Kyounggon Choi
  • Publication number: 20160230822
    Abstract: First temporary capacity reduction control that when acceleration ON is judged during coasting lock-up, brings lock-up clutch (20) into slip state by decreasing torque transmission capacity of lock-up clutch and subsequently returns lock-up clutch to lock-up state by increasing torque transmission capacity is executed. Control unit performing second temporary capacity reduction control that when return of accelerator pedal depression is judged during the progress of returning to lock-up state, decreases torque transmission capacity again and subsequently returns lock-up clutch to lock-up state by increasing torque transmission capacity is provided. In second temporary capacity reduction control, torque transmission capacity is decreased with predetermined torque transmission capacity by which lock-up clutch is not fully disengaged being lower limit value.
    Type: Application
    Filed: October 17, 2014
    Publication date: August 11, 2016
    Applicants: JATCO LTD, NISSAN MOTOR CO., LTD.
    Inventors: Yasuhiro ENDO, Kouji SAITOU, Kenji NAKASHIMA, Akito SUZUKI, Kyounggon CHOI
  • Patent number: 9243326
    Abstract: A surface treatment apparatus in which a disk-like sample-holding plate is provided inside an enclosure constituting a cylindrical circumferential wall. A cylindrical portion in an upper portion of the enclosure constitutes a material fluid supplying channel, and a channel provided on the lateral side of the sample-holding plate in the enclosure and shaped spreading as it goes farther from the cylindrical portion constitutes a fluid discharge channel. The fluid discharge channel employs a parabola curve or the like in which the position of the upper end of the outmost circumference of the sample-holding plate is defined as a focus position and the position of the upper end of the outlet that is symmetrically opposite to the focus position is defined as a reference position.
    Type: Grant
    Filed: March 17, 2011
    Date of Patent: January 26, 2016
    Assignees: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yu Yan Jiang, Masahide Inagaki, Kenji Nakashima, Soichiro Makino, Nariaki Horinouchi, Takahiro Ito
  • Patent number: 9184044
    Abstract: A method for manufacturing a semiconductor device is provided with filling a trench by supplying trichlorosilane gas to a substrate where the trench is formed. A relation between a gas concentration of trichlorosilane gas and a film formation speed includes a concentration countergradient condition in which the film formation speed decreases as the gas concentration increases. The filling of the trench is performed under the concentration countergradient condition.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: November 10, 2015
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Takayuki Koyama, Takanori Yamamoto, Kenji Nakashima, Takahiro Kozawa
  • Publication number: 20150134215
    Abstract: A device for controlling a start of a vehicle includes a rotation speed obtaining unit that obtains an actual engine rotation speed of the engine, a target rotation speed computing unit that computes a target rotation speed of the engine in the slip control, a control target value computing unit that computes a control target value, which is a target value for controlling the engine rotation speed to the target rotation speed based on the actual engine rotation speed and the target rotation speed, and an instruction value computing unit that computes an instruction value for the lock-up clutch necessary to control the engine rotation speed to the control target value based on the control target value.
    Type: Application
    Filed: April 19, 2013
    Publication date: May 14, 2015
    Applicants: JATCO LTD, NISSAN MOTOR CO., LTD.
    Inventors: Takateru Kawaguchi, Akito Suzuki, Kenji Nakashima, Aki Hayakawa, Yasuhiro Endo, Hiroshi Sekiya, Akihiro Tanabe, Tetsuya Izumi, Masaaki Uchida
  • Patent number: 8956458
    Abstract: A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas and then supplies the heated gas to the mixing chamber. The mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber. A temperature in the heating chamber is higher than a temperature in the mixing chamber.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: February 17, 2015
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Takahiro Kozawa, Kenji Nakashima, Keeyoung Jun, Takahiro Ito
  • Patent number: 8703590
    Abstract: A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 ?mol per minute per 1 cm2 of the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: April 22, 2014
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Takahiro Ito, Takahiro Kozawa, Kenji Nakashima, Keeyoung Jun