Patents by Inventor Kenji Nakashima
Kenji Nakashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11742461Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a second layer in contact with the second electrodes of the semiconductor element and a first layer located on a side opposite to the second electrodes, an average crystal grain size of crystals included in the second layer is larger than an average crystal grain size of crystals included in the first layer, and the first layer is spaced apart from the second electrodes of the semiconductor element.Type: GrantFiled: July 8, 2022Date of Patent: August 29, 2023Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Masanori Hiroki, Shigeo Hayashi, Kenji Nakashima, Toshiya Fukuhisa, Keimei Masamoto, Atsushi Yamada
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Patent number: 11629827Abstract: An illumination device includes a first light source that emits first light having a first peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum; a second light source that emits second light having a second peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum, the second light illuminating a position identical to a position illuminated by the first light; and a detection device that detects whether an object is present at a given position, wherein the second peak wavelength is shorter than the first peak wavelength, and a luminous flux of the first light is decreased and a luminous flux of the second light is increased when the detection device detects that the object is present at the predetermined position.Type: GrantFiled: June 21, 2022Date of Patent: April 18, 2023Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Atsuhiro Hori, Kenji Nakashima, Yasutoshi Kawaguchi, Hidemi Takeishi, Masanori Michimori, Shigeo Hayashi
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Publication number: 20220344547Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a second layer in contact with the second electrodes of the semiconductor element and a first layer located on a side opposite to the second electrodes, an average crystal grain size of crystals included in the second layer is larger than an average crystal grain size of crystals included in the first layer, and the first layer is spaced apart from the second electrodes of the semiconductor element.Type: ApplicationFiled: July 8, 2022Publication date: October 27, 2022Inventors: Masanori HIROKI, Shigeo HAYASHI, Kenji NAKASHIMA, Toshiya FUKUHISA, Keimei MASAMOTO, Atsushi YAMADA
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Publication number: 20220316662Abstract: An illumination device includes a first light source that emits first light having a first peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum; a second light source that emits second light having a second peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum, the second light illuminating a position identical to a position illuminated by the first light; and a detection device that detects whether an object is present at a given position, wherein the second peak wavelength is shorter than the first peak wavelength, and a luminous flux of the first light is decreased and a luminous flux of the second light is increased when the detection device detects that the object is present at the predetermined position.Type: ApplicationFiled: June 21, 2022Publication date: October 6, 2022Inventors: Atsuhiro Hori, Kenji NAKASHIMA, Yasutoshi KAWAGUCHI, Hidemi TAKEISHI, Masanori MICHIMORI, Shigeo HAYASHI
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Patent number: 11417805Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.Type: GrantFiled: October 20, 2021Date of Patent: August 16, 2022Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Masanori Hiroki, Shigeo Hayashi, Kenji Nakashima, Toshiya Fukuhisa, Keimei Masamoto, Atsushi Yamada
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Publication number: 20220052231Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.Type: ApplicationFiled: October 20, 2021Publication date: February 17, 2022Inventors: Masanori HIROKI, Shigeo HAYASHI, Kenji NAKASHIMA, Toshiya FUKUHISA, Keimei MASAMOTO, Atsushi YAMADA
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Patent number: 11183615Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.Type: GrantFiled: December 20, 2018Date of Patent: November 23, 2021Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Masanori Hiroki, Shigeo Hayashi, Kenji Nakashima, Toshiya Fukuhisa, Keimei Masamoto, Atsushi Yamada
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Publication number: 20200365410Abstract: An etching device may include a reservoir storing an etchant, a support member configured to support the semiconductor wafer in a state where a first surface of the semiconductor wafer is immersed in the etchant, a light source configured to irradiate the first surface of the semiconductor wafer supported by the support member with light emitted from the light source, an electrode disposed in the reservoir, and a power source configured to apply a current between the electrode and the semiconductor wafer supported by the support member, the current changing between a first current value and a second current value larger than the first current value.Type: ApplicationFiled: April 2, 2020Publication date: November 19, 2020Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Daisuke SUGIZAKI, Kunio AKEDO, Koji NODA, Eiko ISHII, Kenji NAKASHIMA
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Publication number: 20200365771Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.Type: ApplicationFiled: December 20, 2018Publication date: November 19, 2020Applicants: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD., PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.Inventors: Masanori HIROKI, Shigeo HAYASHI, Kenji NAKASHIMA, Toshiya FUKUHISA, Keimei MASAMOTO, Atsushi YAMADA
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Publication number: 20200279760Abstract: An etching device may include a reservoir storing an etchant, a support member configured to rotatably support the semiconductor wafer in a state where a first surface of the semiconductor wafer is immersed in the etchant, a light source configured to emit light to the first surface of the semiconductor wafer, a counter electrode disposed in the reservoir and disposed between the support member and the light source, and a power source configured to apply a voltage between the semiconductor wafer and the counter electrode. When the light source emits light, a lighted area by the light and a shadow of the counter electrode may be projected onto the first surface of the semiconductor wafer, and when the semiconductor wafer is rotated by the support member, at least a part of the first surface may pass both the lighted area and the shadow.Type: ApplicationFiled: February 14, 2020Publication date: September 3, 2020Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Daisuke SUGIZAKI, Eiko Ishii, Kenji Nakashima, Kunio Akedo, Koji Noda
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Patent number: 10435808Abstract: An etching apparatus having a liquid bath storing an etching liquid, a substrate installation part capable of supporting the semiconductor substrate in vertical placement at a position at which a treatment surface of the semiconductor substrate is immersed in the etching liquid, a sample electrode provided at the substrate installation part and electrically connected to the semiconductor substrate, a counter electrode disposed at a position at which the counter electrode is immersed in the etching liquid in the liquid bath, a light source irradiating the treatment surface of the semiconductor substrate with light, and an irradiation window provided between the treatment surface of the semiconductor substrate and the light source and at a position separated from the semiconductor substrate in a horizontal direction.Type: GrantFiled: September 21, 2017Date of Patent: October 8, 2019Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Eiko Ishii, Yumi Saito, Teruhisa Akashi, Kenji Nakashima
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Publication number: 20180112325Abstract: An etching apparatus having a liquid bath storing an etching liquid, a substrate installation part capable of supporting the semiconductor substrate in vertical placement at a position at which a treatment surface of the semiconductor substrate is immersed in the etching liquid, a sample electrode provided at the substrate installation part and electrically connected to the semiconductor substrate, a counter electrode disposed at a position at which the counter electrode is immersed in the etching liquid in the liquid bath, a light source irradiating the treatment surface of the semiconductor substrate with light, and an irradiation window provided between the treatment surface of the semiconductor substrate and the light source and at a position separated from the semiconductor substrate in a horizontal direction.Type: ApplicationFiled: September 21, 2017Publication date: April 26, 2018Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Eiko ISHII, Yumi SAITO, Teruhisa AKASHI, Kenji NAKASHIMA
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Patent number: 9670974Abstract: A device for controlling a start of a vehicle includes a rotation speed obtaining unit that obtains an actual engine rotation speed of the engine, a target rotation speed computing unit that computes a target rotation speed of the engine in the slip control, a control target value computing unit that computes a control target value, which is a target value for controlling the engine rotation speed to the target rotation speed based on the actual engine rotation speed and the target rotation speed, and an instruction value computing unit that computes an instruction value for the lock-up clutch necessary to control the engine rotation speed to the control target value based on the control target value.Type: GrantFiled: April 19, 2013Date of Patent: June 6, 2017Assignees: JATCO Ltd, NISSAN MOTOR CO., LTD.Inventors: Takateru Kawaguchi, Akito Suzuki, Kenji Nakashima, Aki Hayakawa, Yasuhiro Endo, Hiroshi Sekiya, Akihiro Tanabe, Tetsuya Izumi, Masaaki Uchida
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Patent number: 9523400Abstract: First temporary capacity reduction control that when acceleration ON is judged during coasting lock-up, brings lock-up clutch (20) into slip state by decreasing torque transmission capacity of lock-up clutch and subsequently returns lock-up clutch to lock-up state by increasing torque transmission capacity is executed. Control unit performing second temporary capacity reduction control that when return of accelerator pedal depression is judged during the progress of returning to lock-up state, decreases torque transmission capacity again and subsequently returns lock-up clutch to lock-up state by increasing torque transmission capacity is provided. In second temporary capacity reduction control, torque transmission capacity is decreased with predetermined torque transmission capacity by which lock-up clutch is not fully disengaged being lower limit value.Type: GrantFiled: October 17, 2014Date of Patent: December 20, 2016Assignees: JATCO LTD, NISSAN MOTOR CO., LTD.Inventors: Yasuhiro Endo, Kouji Saitou, Kenji Nakashima, Akito Suzuki, Kyounggon Choi
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Publication number: 20160230822Abstract: First temporary capacity reduction control that when acceleration ON is judged during coasting lock-up, brings lock-up clutch (20) into slip state by decreasing torque transmission capacity of lock-up clutch and subsequently returns lock-up clutch to lock-up state by increasing torque transmission capacity is executed. Control unit performing second temporary capacity reduction control that when return of accelerator pedal depression is judged during the progress of returning to lock-up state, decreases torque transmission capacity again and subsequently returns lock-up clutch to lock-up state by increasing torque transmission capacity is provided. In second temporary capacity reduction control, torque transmission capacity is decreased with predetermined torque transmission capacity by which lock-up clutch is not fully disengaged being lower limit value.Type: ApplicationFiled: October 17, 2014Publication date: August 11, 2016Applicants: JATCO LTD, NISSAN MOTOR CO., LTD.Inventors: Yasuhiro ENDO, Kouji SAITOU, Kenji NAKASHIMA, Akito SUZUKI, Kyounggon CHOI
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Patent number: 9243326Abstract: A surface treatment apparatus in which a disk-like sample-holding plate is provided inside an enclosure constituting a cylindrical circumferential wall. A cylindrical portion in an upper portion of the enclosure constitutes a material fluid supplying channel, and a channel provided on the lateral side of the sample-holding plate in the enclosure and shaped spreading as it goes farther from the cylindrical portion constitutes a fluid discharge channel. The fluid discharge channel employs a parabola curve or the like in which the position of the upper end of the outmost circumference of the sample-holding plate is defined as a focus position and the position of the upper end of the outlet that is symmetrically opposite to the focus position is defined as a reference position.Type: GrantFiled: March 17, 2011Date of Patent: January 26, 2016Assignees: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Yu Yan Jiang, Masahide Inagaki, Kenji Nakashima, Soichiro Makino, Nariaki Horinouchi, Takahiro Ito
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Patent number: 9184044Abstract: A method for manufacturing a semiconductor device is provided with filling a trench by supplying trichlorosilane gas to a substrate where the trench is formed. A relation between a gas concentration of trichlorosilane gas and a film formation speed includes a concentration countergradient condition in which the film formation speed decreases as the gas concentration increases. The filling of the trench is performed under the concentration countergradient condition.Type: GrantFiled: April 29, 2015Date of Patent: November 10, 2015Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Takayuki Koyama, Takanori Yamamoto, Kenji Nakashima, Takahiro Kozawa
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Publication number: 20150134215Abstract: A device for controlling a start of a vehicle includes a rotation speed obtaining unit that obtains an actual engine rotation speed of the engine, a target rotation speed computing unit that computes a target rotation speed of the engine in the slip control, a control target value computing unit that computes a control target value, which is a target value for controlling the engine rotation speed to the target rotation speed based on the actual engine rotation speed and the target rotation speed, and an instruction value computing unit that computes an instruction value for the lock-up clutch necessary to control the engine rotation speed to the control target value based on the control target value.Type: ApplicationFiled: April 19, 2013Publication date: May 14, 2015Applicants: JATCO LTD, NISSAN MOTOR CO., LTD.Inventors: Takateru Kawaguchi, Akito Suzuki, Kenji Nakashima, Aki Hayakawa, Yasuhiro Endo, Hiroshi Sekiya, Akihiro Tanabe, Tetsuya Izumi, Masaaki Uchida
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Patent number: 8956458Abstract: A vapor deposition device includes a vapor deposition chamber, a heating chamber, a mixing chamber, a first reservoir for storing trichlorosilane gas, and a second reservoir for storing silane gas that reacts with hydrochloric acid gas. The heating chamber communicates with the first reservoir and the mixing chamber, heats the trichlorosilane gas and then supplies the heated gas to the mixing chamber. The mixing chamber communicates with the second reservoir and the vapor deposition chamber, mixes the heated gas supplied from the heating chamber and the silane gas and then supplies the mixed gas to the vapor deposition chamber. A temperature in the heating chamber is higher than a temperature in the mixing chamber.Type: GrantFiled: August 31, 2011Date of Patent: February 17, 2015Assignee: Toyota Jidosha Kabushiki KaishaInventors: Takahiro Kozawa, Kenji Nakashima, Keeyoung Jun, Takahiro Ito
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Patent number: 8703590Abstract: A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 ?mol per minute per 1 cm2 of the surface of the substrate. The carrier gas includes a hydrogen gas and at least one or more gases selected from argon, xenon, krypton and neon.Type: GrantFiled: December 8, 2010Date of Patent: April 22, 2014Assignee: Toyota Jidosha Kabushiki KaishaInventors: Takahiro Ito, Takahiro Kozawa, Kenji Nakashima, Keeyoung Jun