Abstract: A boron nitride particle having a shell part formed of boron nitride and a hollow part surrounded by the shell part, in which a density of the boron nitride on an inside of the shell part is higher than a density of the boron nitride on an outside of the shell part. A resin composition containing the boron nitride particle and a resin. A method for producing a resin composition including a step of preparing the boron nitride particle and a step of mixing the boron nitride particle with a resin.

Abstract: A boron nitride particle having a bent shape. A resin composition containing the boron nitride particle and a resin. A method for producing a resin composition including a step of preparing the boron nitride particle and a step of mixing the boron nitride particle with a resin.

Abstract: A method for producing a boron nitride particle, including a step of disposing a mixture and a base material in a container formed of a carbon material, in which the mixture includes boron carbide and boric acid, and the base material is formed of a carbon material and a step of generating a boron nitride particle on the base material by heating and pressurization with a nitrogen atmosphere formed in the container. A boron nitride particle having a maximum length of 80 ?m or longer, and an aspect ratio of 1.5 or more.

Abstract: A power conversion apparatus includes a hermetic housing, a power semiconductor module, and dry gas. The hermetic housing includes a gas inlet valve and a gas outlet valve. The power semiconductor module is arranged in an internal space in the hermetic housing. The internal space in the hermetic housing is filled with dry gas.

Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a second layer in contact with the second electrodes of the semiconductor element and a first layer located on a side opposite to the second electrodes, an average crystal grain size of crystals included in the second layer is larger than an average crystal grain size of crystals included in the first layer, and the first layer is spaced apart from the second electrodes of the semiconductor element.

Abstract: A suspending member, such as a tether strap or the like, may by connected to improve convenience for an operator. The function of the suspending member shall be reliably performed by clearly notifying the user when the connecting part for connecting the suspending member is damaged. A ring-shaped notification member is incorporated in a connecting part for connecting the suspending member. The suspending member is inserted into both of a connecting hole in a connecting part and a notification member so as to be connected. When an end of a handle portion breaks due to long-term use, the notification member is pulled out such that the damage of the connecting part is notified.

Abstract: An object is to provide a photocurable inkjet printing ink composition offering curability and adhesion on printing targets including sheets whose printing face is constituted by paper, polyester, polyvinyl chloride, ethylene-vinyl acetate-based copolymer, or other vinyl-based polymers, etc., and additionally having storage stability. The cured coating film has low odor, low tackiness, abrasion resistance, high water resistance, high ethanol resistance, stretchability, and excellent bending resistance. Means for solving the problem includes providing a photocurable inkjet printing ink composition containing vinyl methyl oxazolidinone by 5 to 50% by mass relative to the entire ink composition, a monofunctional photopolymerizable monomer having a glass-transition temperature of 10° C. or less by 10 to 50% by mass relative to the entire ink composition, a colorant, and a photopolymerization initiator.

Abstract: An illumination device includes a first light source that emits first light having a first peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum; a second light source that emits second light having a second peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum, the second light illuminating a position identical to a position illuminated by the first light; and a detection device that detects whether an object is present at a given position, wherein the second peak wavelength is shorter than the first peak wavelength, and a luminous flux of the first light is decreased and a luminous flux of the second light is increased when the detection device detects that the object is present at the predetermined position.

Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a second layer in contact with the second electrodes of the semiconductor element and a first layer located on a side opposite to the second electrodes, an average crystal grain size of crystals included in the second layer is larger than an average crystal grain size of crystals included in the first layer, and the first layer is spaced apart from the second electrodes of the semiconductor element.

Abstract: An illumination device includes a first light source that emits first light having a first peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum; a second light source that emits second light having a second peak wavelength which is highest in intensity in a wavelength range from near-ultraviolet to green in an emission spectrum, the second light illuminating a position identical to a position illuminated by the first light; and a detection device that detects whether an object is present at a given position, wherein the second peak wavelength is shorter than the first peak wavelength, and a luminous flux of the first light is decreased and a luminous flux of the second light is increased when the detection device detects that the object is present at the predetermined position.

Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.

Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.

Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.

Abstract: An etching device may include a reservoir storing an etchant, a support member configured to support the semiconductor wafer in a state where a first surface of the semiconductor wafer is immersed in the etchant, a light source configured to irradiate the first surface of the semiconductor wafer supported by the support member with light emitted from the light source, an electrode disposed in the reservoir, and a power source configured to apply a current between the electrode and the semiconductor wafer supported by the support member, the current changing between a first current value and a second current value larger than the first current value.

Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.

Abstract: An etching device may include a reservoir storing an etchant, a support member configured to rotatably support the semiconductor wafer in a state where a first surface of the semiconductor wafer is immersed in the etchant, a light source configured to emit light to the first surface of the semiconductor wafer, a counter electrode disposed in the reservoir and disposed between the support member and the light source, and a power source configured to apply a voltage between the semiconductor wafer and the counter electrode. When the light source emits light, a lighted area by the light and a shadow of the counter electrode may be projected onto the first surface of the semiconductor wafer, and when the semiconductor wafer is rotated by the support member, at least a part of the first surface may pass both the lighted area and the shadow.

Abstract: An etching apparatus having a liquid bath storing an etching liquid, a substrate installation part capable of supporting the semiconductor substrate in vertical placement at a position at which a treatment surface of the semiconductor substrate is immersed in the etching liquid, a sample electrode provided at the substrate installation part and electrically connected to the semiconductor substrate, a counter electrode disposed at a position at which the counter electrode is immersed in the etching liquid in the liquid bath, a light source irradiating the treatment surface of the semiconductor substrate with light, and an irradiation window provided between the treatment surface of the semiconductor substrate and the light source and at a position separated from the semiconductor substrate in a horizontal direction.

Abstract: An etching apparatus having a liquid bath storing an etching liquid, a substrate installation part capable of supporting the semiconductor substrate in vertical placement at a position at which a treatment surface of the semiconductor substrate is immersed in the etching liquid, a sample electrode provided at the substrate installation part and electrically connected to the semiconductor substrate, a counter electrode disposed at a position at which the counter electrode is immersed in the etching liquid in the liquid bath, a light source irradiating the treatment surface of the semiconductor substrate with light, and an irradiation window provided between the treatment surface of the semiconductor substrate and the light source and at a position separated from the semiconductor substrate in a horizontal direction.

Abstract: A device for controlling a start of a vehicle includes a rotation speed obtaining unit that obtains an actual engine rotation speed of the engine, a target rotation speed computing unit that computes a target rotation speed of the engine in the slip control, a control target value computing unit that computes a control target value, which is a target value for controlling the engine rotation speed to the target rotation speed based on the actual engine rotation speed and the target rotation speed, and an instruction value computing unit that computes an instruction value for the lock-up clutch necessary to control the engine rotation speed to the control target value based on the control target value.

Abstract: First temporary capacity reduction control that when acceleration ON is judged during coasting lock-up, brings lock-up clutch (20) into slip state by decreasing torque transmission capacity of lock-up clutch and subsequently returns lock-up clutch to lock-up state by increasing torque transmission capacity is executed. Control unit performing second temporary capacity reduction control that when return of accelerator pedal depression is judged during the progress of returning to lock-up state, decreases torque transmission capacity again and subsequently returns lock-up clutch to lock-up state by increasing torque transmission capacity is provided. In second temporary capacity reduction control, torque transmission capacity is decreased with predetermined torque transmission capacity by which lock-up clutch is not fully disengaged being lower limit value.