Abstract: A circuit board incorporable into an apparatus includes a substrate, a reception unit that is provided on the substrate and that wirelessly receives a function program for achieving a function, a storage unit that is provided on the substrate and to which a writing program for writing the function program received by the reception unit has been written in advance, a power supply provided on the substrate, and a power control unit that supplies power for receiving, with the reception unit, the function program and power for writing, on a basis of the writing program, the function program to the storage unit using the power supply without using an external power supply.

Abstract: A process for producing a wet rubber masterbatch comprises a step (I) of dispersing a filler into a dispersing solvent to produce a filler-containing slurry solution, and a step (II) of adding a rubber latex solution to the filler-containing slurry solution to yield a filler-containing rubber latex solution, and stirring the yielded filler-containing rubber latex solution while heating the filler-containing rubber latex solution, thereby solidifying the filler-containing rubber latex solution, and a step (III) of stirring the resultant while adding an acid thereto, thereby solidifying the filler-containing rubber latex solution. In the step (II), the circumferential speed of a stirring impeller which a mixing tank used at the time of the stirring has is less than 10 m/s, and a calorie of 25 to 250 J both inclusive per unit period and unit mass is given to the filler-containing rubber latex solution by the heating.

Abstract: The present invention provides a vertical-type thin film transistor (TFT). The vertical TFT may comprise a source electrode and a drain electrode extending parallel to each other, with a semiconductor layer arranged in between the source electrode and the drain electrode. Two or more gate electrodes may be embedded in the semiconductor layer, the two or more gate electrodes being arranged parallel to one another. Each of the two or more gate electrodes may comprise a structure adapted to allow the flow of electrons therethrough. The structure of each of the gate electrodes may comprise one of a comb-like structure, a mesh structure, a perforated structure, a lattice structure, and the like. The structure may block a direct electric field between the source electrode and the drain electrode. The structure may allow the flow of electrons around and between elements of the structure.

Abstract: An information processing apparatus includes a sensing unit that senses occurrence of a predetermined fault through one of detection of the occurrence of the fault and prediction of the occurrence of the fault, and a notifying unit that, when the fault is sensed to have occurred by the sensing unit, identifies a user to be notified that the fault is sensed to have occurred from among multiple users registered in advance, and notifies an information processing terminal of the identified user that the fault has occurred.

Abstract: A method for manufacturing a wet rubber masterbatch that will serve as raw material for vulcanized rubber having excellent tensile strength and tear strength and that will permit wet rubber masterbatch to be molded in a short time. A method comprising an operation in which a collection of granules comprising a plurality of granular coagula are obtained from a liquid mixture comprising filler and rubber latex solution, and an operation in which the collection of granules is compressed under conditions satisfying Formula I; 3?P×Da?500 (P indicates pressure (kgf/cm2) applied to the collection of granules. Da indicates granule diameter (mm) of the granular coagula), making it possible to cause a wet rubber masterbatch capable of serving as raw material for vulcanized rubber having excellent tensile strength and tear strength to be molded in a short time.

Abstract: An image processing device includes an authenticator, an estimator, and a controller. The authenticator uses authentication information received from a user to authenticate and determine whether or not the user is a person allowed to execute plural functions related to images. If the authenticator authenticates the user as a registered user allowed to execute the plural functions, the estimator uses history information recording information related to the execution of the plural functions to estimate a function to be executed by the user from among the plural functions. The controller controls related parts used to execute the function estimated by the estimator so that the related parts start preparing for operation before the user issues an instruction to execute some kind of function.

Abstract: In a fluid pressure cylinder, a first positioning ring is provided detachably on a first annular projection of a head cover, and a second positioning ring is provided detachably on a second annular projection of a rod cover. Further, a structure is provided in which opposite ends of a cylinder tube are inserted over and capable of being retained on outer circumferential sides of the first and second positioning rings. As a result, by preparing a new cylinder tube having a different diameter, and new first and second positioning rings, and mounting the new cylinder tube through the new first and second positioning rings, which are installed on the first and second annular projections, a fluid pressure cylinder having a different bore diameter can be obtained.

Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Abstract: A rubber composition obtained by dry-mixing a rubber wet masterbatch A containing a carbon black A having a nitrogen adsorption specific: surface area (N2SA) of NA (m2/g) with a rubber wet masterbatch B containing a carbon black B having a nitrogen adsorption specific surface area (N2SA) of NB (m2/g), wherein the content ratio of the rubber wet masterbatch A to the rubber wet masterbatch B is from 5/95 to 40/60, and when the content proportion of the carbon black A in the rubber wet masterbatch A is represented by LA, and that of the carbon black B in the rubber wet masterbatch B is represented by LB, the specific expressions are satisfied.

Abstract: This disclosure provides p-type metal oxide semiconductor materials that display good thin film transistor (TFT) characteristics. Also provided are TFTs including channels that include p-type oxide semiconductors, and methods of fabrication. The p-type metal oxide films may be hydrogenated such that they have a hydrogen content of at least 1018 atoms/cm3, and in some implementations, at least 1020 atoms/cm3, or higher. Examples of hydrogenated p-type metal oxide films include hydrogenated tin (II)-based films and hydrogenated copper (I)-based films. The TFTs may be characterized by having one or more TFT characteristics such as high mobility, low subthreshold swing (s-value), and high on/off current ratio.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: An image processing device includes an authenticator, an estimator, and a controller. The authenticator uses authentication information received from a user to authenticate and determine whether or not the user is a person allowed to execute plural functions related to images. If the authenticator authenticates the user as a registered user allowed to execute the plural functions, the estimator uses history information recording information related to the execution of the plural functions to estimate a function to be executed by the user from among, the plural functions. The controller controls related parts used to execute the function estimated by the estimator so that the related parts start preparing for operation before the user issues an instruction to execute some kind of function.

Abstract: In the step (I), the period (minute(s)) for dispersing the carbon black species A showing a nitrogen adsorption specific surface area (N2SA-(A)value) of 130 m2/g or less in the dispersing solvent and that minute(s)) for dispersing the carbon black species B showing an N2SA-(B) value lower than the N2SA-(A) value by 25 m2/g or more in the dispersing solvent by ?(A) and ?(B), respectively, and further representing the rotation number (rpm) of a rotor of a dispersing machine used in the dispersing when the carbon black species A is dispersed, and that (rpm) of a rotor of a dispersing machine used in the dispersing when the carbon black species B is dispersed by ?(A) and ?(B), respectively, the following expression is satisfied: 1.1?(B)×?(B)??(A)×?(A)?1.5?(B)×?(B) ??(1).

Abstract: A wireless network apparatus includes a wireless communication unit, a receiving unit, an acquisition unit, and a setting unit. The wireless communication unit performs wireless communication with a mobile terminal apparatus. The receiving unit receives user identification information regarding a user corresponding to the mobile terminal apparatus in which network connection information assigned in advance to the user is set. The network connection information includes an identification name and authentication information that are used for network connection. The acquisition unit acquires network connection information set in association with the user identification information received by the receiving unit. The setting unit sets, in the wireless communication unit, the network connection information acquired by the acquisition unit.

Abstract: An image processing apparatus includes an authenticating unit that performs authentication as to whether a user is an authenticated user who is permitted to use multiple functions, a determining unit that, by use of history information that records an operation made by the authenticated user authenticated by the authenticating unit, determines an expected function that is expected to be executed by the authenticated user among the multiple functions, and a setting attribute for each of setting items that specify how the expected function is to be executed, a setting unit that sets the setting attribute for the expected function determined by the determining unit, and a display that displays, on a display device, an execution screen that shows the setting attribute set by the setting unit and receives an instruction instructing that the expected function be executed.

Abstract: An information processing apparatus includes a sensing unit that senses occurrence of a predetermined fault through one of detection of the occurrence of the fault and prediction of the occurrence of the fault, and a notifying unit that, when the fault is sensed to have occurred by the sensing unit, identifies a user to be notified that the fault is sensed to have occurred from among multiple users registered in advance, and notifies an information processing terminal of the identified user that the fault has occurred.

Abstract: A problem is to provide a method for manufacturing a wet rubber masterbatch that will serve as raw material for vulcanized rubber having excellent tensile strength and tear strength and that will permit wet rubber masterbatch to be molded in a short time. A method comprising an operation in which a collection of granules comprising a plurality of granular coagula are obtained from a liquid mixture comprising filler and rubber latex solution, and an operation in which the collection of granules is compressed under conditions satisfying Formula I, makes it possible to cause a wet rubber masterbatch capable of serving as raw material for vulcanized rubber having excellent tensile strength and tear strength to be molded in a short time. 3?P×Da?500??FORMULA I (P indicates pressure (kgf/cm2) applied to the collection of granules. Da indicates granule diameter (mm) of the granular coagula.

Abstract: This disclosure provides thin film transistors (TFTs) including p-n hetero-junction structures. A p-n hetero-junction structure may include a junction between a narrow bandgap material and a wide bandgap material. The narrow bandgap material, which may be an oxide, nitride, selenide, or sulfide, is the active channel material of the TFT and may provide relatively high carrier mobility. The hetero-junction structures facilitate band-to-band tunneling and suppression of TFT off-currents. In various implementations, the TFTs may be formed on flexible substrates and have low temperature processing capabilities.