Patents by Inventor Kenji Nomura

Kenji Nomura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9647135
    Abstract: This disclosure provides p-type metal oxide semiconductor thin films that display good thin film transistor (TFT) characteristics. The p-type metal oxide thin films include ternary or higher order tin-based (Sn-based) p-type oxides such as Sn (II)-M-O oxides where M is a metal. In some implementations, M is a metal selected from the d block or the p block of the periodic table. The oxides disclosed herein exhibit p-type conduction and wide bandgaps. Also provided are TFTs including channels that include p-type oxide semiconductors, and methods of fabrication. In some implementations, the p-channel TFTs have low off-currents.
    Type: Grant
    Filed: January 22, 2015
    Date of Patent: May 9, 2017
    Assignee: SNAPTRACK, INC.
    Inventor: Kenji Nomura
  • Publication number: 20170125605
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: January 10, 2017
    Publication date: May 4, 2017
    Inventors: MASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
  • Patent number: 9607909
    Abstract: An analysis device includes an X-ray generation part configured to generate four monochromatic X-rays with different energies to irradiate a sample, an electrically conductive sample stage configured to place the sample thereon and formed of an electrically conductive material, an electrode configured to detect an electric current carried by irradiating the sample with the four monochromatic X-rays with different energies, and an electric power source configured to apply a voltage between the electrically conductive sample stage and the electrode, wherein the four monochromatic X-rays with different energies are X-rays included within a range from an absorption edge of a compound semiconductor included in the sample to a higher energy side of 300 eV.
    Type: Grant
    Filed: June 2, 2014
    Date of Patent: March 28, 2017
    Assignee: FUJITSU LIMITED
    Inventor: Kenji Nomura
  • Patent number: 9583637
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: February 28, 2017
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Japan Science and Technology Agency
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 9527968
    Abstract: A method for producing a rubber wet master batch contains a coagulating step of mixing a slurry solution containing the filler and the dispersing solvent with the rubber latex solution, and coagulating the mixture, thereby producing a filler-containing rubber coagulation, and a heating step of using a uniaxial extruder to heat the filler-containing rubber coagulation to a temperature of 180 to 200 C, thereby dehydrating, drying and plasticizing the filler-containing rubber coagulation through a single step. The uniaxial extruder is an extruder having a screw, and an outer cylinder having an inner wall surface in which a slit is formed to be extended along the longitudinal direction of the outer cylinder (screw axial direction); and at least one portion of the inner wall surface of the outer cylinder is subjected to blasting treatment.
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: December 27, 2016
    Assignee: TOYO TIRE & RUBBER CO., LTD.
    Inventors: Kenji Nomura, Takashi Miyasaka
  • Publication number: 20160289398
    Abstract: A rubber composition obtained by dry-mixing a rubber wet masterbatch A containing a carbon black A having a nitrogen adsorption specific: surface area (N2SA) of NA (m2/g) with a rubber wet masterbatch B containing a carbon black B having a nitrogen adsorption specific surface area (N2SA) of NB (m2/g), wherein the content ratio of the rubber wet masterbatch A to the rubber wet masterbatch B is from 5/95 to 40/60, and when the content proportion of the carbon black A in the rubber wet masterbatch A is represented by LA, and that of the carbon black B in the rubber wet masterbatch B is represented by LB, the specific expressions are satisfied.
    Type: Application
    Filed: May 12, 2014
    Publication date: October 6, 2016
    Applicant: TOYO TIRE & RUBBER CO., LTD.
    Inventors: Makoto Tanaka, Kenji Nomura, Norio Minouchi
  • Patent number: 9431244
    Abstract: This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: August 30, 2016
    Assignee: QUALCOMM MEMS Technologies, Inc.
    Inventors: John Hyunchul Hong, Tze-Ching Fung, Cheonhong Kim, Kenji Nomura
  • Publication number: 20160247927
    Abstract: This disclosure provides thin film transistors (TFTs) including p-n hetero-junction structures. A p-n hetero junction structure may include a junction between a narrow bandgap material and a wide bandgap material. The narrow bandgap material, which may be an oxide, nitride, selenide, or sulfide, is the active channel material of the TFT and may provide relatively high carrier mobility. The hetero junction structures facilitate band-to-band tunneling and suppression of TFT off-currents. In various implementations, the TFTs may be formed on flexible substrates and have low temperature processing capabilities.
    Type: Application
    Filed: February 25, 2015
    Publication date: August 25, 2016
    Inventors: Kenji Nomura, John Hyunchul Hong
  • Publication number: 20160218223
    Abstract: This disclosure provides p-type metal oxide semiconductor thin films that display good thin film transistor (TFT) characteristics. The p-type metal oxide thin films include ternary or higher order tin-based (Sn-based) p-type oxides such as Sn (II)-M-O oxides where M is a metal. In some implementations, M is a metal selected from the d block or the p block of the periodic table. The oxides disclosed herein exhibit p-type conduction and wide bandgaps. Also provided are TFTs including channels that include p-type oxide semiconductors, and methods of fabrication. In some implementations, the p-channel TFTs have low off-currents.
    Type: Application
    Filed: January 22, 2015
    Publication date: July 28, 2016
    Inventor: Kenji Nomura
  • Publication number: 20160208058
    Abstract: In the step (I), the period (minute(s)) for dispersing the carbon black species A showing a nitrogen adsorption specific surface area (N2SA-(A)value) of 130 m2/g or less in the dispersing solvent and that minute(s)) for dispersing the carbon black species B showing an N2SA-(B) value lower than the N2SA-(A) value by 25 m2/g or more in the dispersing solvent toy ?(A) and ?(B), respectively, and further representing the rotation number (rpm) of a rotor of a dispersing machine used in the dispersing when the carbon black species A is dispersed, and that (rpm) of a rotor of a dispersing machine used in the dispersing when the carbon black species B is dispersed by ?(A) and ?(B), respectively, the following expression is satisfied: 1.1?(B)×?(B)??(A)×?(A)?1.
    Type: Application
    Filed: March 14, 2014
    Publication date: July 21, 2016
    Applicant: Toyo Tire & Rubber Co., Ltd.
    Inventors: Kenji Nomura, Makoto Tanaka, Norio Minouchi
  • Publication number: 20160190290
    Abstract: Provided herein are methods of depositing p-type metal oxide thin films by atomic layer deposition (ALD). Also provided are p-type metal oxide thin films and TFTs including p-type metal oxide channels. In some implementations, the p-type metal oxide thin films have a metal and oxygen vacancy defect density of less than 1019/cm3. The p-type metal oxide thin films may be electrically active throughout the entire thicknesses of the thin films.
    Type: Application
    Filed: December 30, 2014
    Publication date: June 30, 2016
    Inventors: Kenji Nomura, John Hyunchul Hong
  • Publication number: 20160133751
    Abstract: This disclosure provides p-type metal oxide semiconductor materials that display good thin film transistor (TFT) characteristics. Also provided are TFTs including channels that include p-type oxide semiconductors, and methods of fabrication. The p-type metal oxide films may be hydrogenated such that they have a hydrogen content of at least 1018 atoms/cm3, and in some implementations, at least 1020 atoms/cm3, or higher. Examples of hydrogenated p-type metal oxide films include hydrogenated tin (II)-based films and hydrogenated copper (I)-based films. The TFTs may be characterized by having one or more TFT characteristics such as high mobility, low subthreshold swing (s-value), and high on/off current ratio.
    Type: Application
    Filed: September 23, 2015
    Publication date: May 12, 2016
    Inventor: Kenji Nomura
  • Publication number: 20160086802
    Abstract: This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.
    Type: Application
    Filed: September 24, 2014
    Publication date: March 24, 2016
    Inventors: John Hyunchul Hong, Tze-Ching Fung, Cheonhong Kim, Kenji Nomura
  • Publication number: 20160076559
    Abstract: In a fluid pressure cylinder, a first positioning ring is provided detachably on a first annular projection of a head cover, and a second positioning ring is provided detachably on a second annular projection of a rod cover. Further, a structure is provided in which opposite ends of a cylinder tube are inserted over and capable of being retained on outer circumferential sides of the first and second positioning rings. As a result, by preparing a new cylinder tube having a different diameter, and new first and second positioning rings, and mounting the new cylinder tube through the new first and second positioning rings, which are installed on the first and second annular projections, a fluid pressure cylinder having a different bore diameter can be obtained.
    Type: Application
    Filed: November 13, 2013
    Publication date: March 17, 2016
    Applicant: SMC CORPORATION
    Inventor: Kenji NOMURA
  • Publication number: 20160076560
    Abstract: A fluid pressure cylinder includes first through fourth stepped portions provided in a multi-stepped manner on a first spigot joint of a head cover, and first through fourth stepped portions provided similarly in a multi-stepped manner on a second spigot joint of a rod cover. A cylinder tube is installed selectively on any one pair of the first through fourth stepped portions. Consequently, by preparing a new cylinder tube that differs in diameter, along with a new piston, and then installing the cylinder tube selectively on any one pair of the first through fourth stepped portions, a fluid pressure cylinder having a different bore diameter is constructed.
    Type: Application
    Filed: November 13, 2013
    Publication date: March 17, 2016
    Applicant: SMC CORPORATION
    Inventor: Kenji NOMURA
  • Patent number: 9269826
    Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
    Type: Grant
    Filed: January 5, 2011
    Date of Patent: February 23, 2016
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Publication number: 20150325707
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: July 22, 2015
    Publication date: November 12, 2015
    Inventors: MASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
  • Patent number: 9130049
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: September 8, 2015
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Japan Science and Technology Agency
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20150247011
    Abstract: A method for producing a rubber wet master batch contains a coagulating step of mixing a slurry solution containing the filler and the dispersing solvent with the rubber latex solution, and coagulating the mixture, thereby producing a filler-containing rubber coagulation, and a heating step of using a uniaxial extruder to heat the filler-containing rubber coagulation to a temperature of 180 to 200 C, thereby dehydrating, drying and plasticizing the filler-containing rubber coagulation through a single step. The uniaxial extruder is an extruder having a screw, and an outer cylinder having an inner wall surface in which a slit is formed to be extended along the longitudinal direction of the outer cylinder (screw axial direction); and at least one portion of the inner wall surface of the outer cylinder is subjected to blasting treatment.
    Type: Application
    Filed: June 18, 2013
    Publication date: September 3, 2015
    Applicant: TOYO TIRE & RUBBER CO., LTD.
    Inventors: Kenji Nomura, Takashi Miyasaka
  • Patent number: 9090499
    Abstract: A method of etching a glass substrate using an etchant that is reversibly activated to etch only in precise locations in which such etching is desired and is deactivated when outside of these locations. The method involves exposing a first side of the glass substrate to a mixture of chemical substances that includes a neutralized etchant that is photosensitive. The neutralized etchant is formed by reacting a neutralizer with an etchant. The method also includes transmitting light from a direction of a second side of the glass into the mixture of chemical substances. In response to exposure to this light, the etchant is reversibly released from a bond to the neutralizer to form the etchant on predetermined areas of the first side of the glass, wherein the predetermined areas are defined by the dimension of the light.
    Type: Grant
    Filed: March 10, 2013
    Date of Patent: July 28, 2015
    Assignee: QUALCOMM Incorporated
    Inventors: John H. Hong, Kenji Nomura, Je-Hsiung Lan