Patents by Inventor Kenji Todori

Kenji Todori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080107371
    Abstract: A near-field interaction control element includes a near-field optical waveguide containing particles formed of a metal, a metal anion or a metal cation with a diameter of 0.5 nm or more and 3 nm or less and a dielectric constant of ?2.5 or more and ?1.5 or less, an electron injector/discharger injecting or discharging an electron into or from the particles contained in the near-field optical waveguide to vary a dielectric constant of the near-field optical waveguide, a near-field light introducing part introducing near-field light into the near-field optical waveguide, and a near-field light emitting part emitting the near-field light having guided through the near-field optical waveguide.
    Type: Application
    Filed: March 26, 2007
    Publication date: May 8, 2008
    Inventors: Kenji Todori, Miho Maruyama, Reiko Yoshimura, Fumihiko Aiga, Tsukasa Tada, Ko Yamada
  • Patent number: 7245576
    Abstract: An optical recording medium includes an optical recording layer, a separating layer formed on a reproducing light incident side of the optical recording layer, and a phase-change reproducing layer formed on the reproducing light incident side of the separating layer, absorbance of which phase-change reproducing layer is changed depending on whether a state of the optical recording layer is a recording mark or a space. A transfer portion to which a state of the optical recording layer is transferred is formed in a portion having high absorbance of the phase-change reproducing layer by irradiation with reproducing light, while a portion of the phase-change reproducing layer other than the transfer portion is kept in a state optically differing from the transfer portion.
    Type: Grant
    Filed: January 16, 2004
    Date of Patent: July 17, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsutaro Ichihara, Sumio Ashida, Keiichiro Yusu, Kenji Todori, Takayuki Tsukamoto
  • Publication number: 20060279833
    Abstract: A refractive index variable element has a structure including a solid matrix, and one or more types of quantum dots dispersed in the solid matrix and having discrete occupied and unoccupied electron energy levels. The quantum dots perform a function of generating a pair of positive and negative charges upon irradiation with light, a function of trapping a positive charge, and a function of trapping a negative charge. The quantum dots performing the function of trapping a negative charge are selected from the group consisting of a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so that an additional electron occupies an upper different shell orbital when receives an electron, a metal chelate complex, and metallocene and derivatives thereof.
    Type: Application
    Filed: May 26, 2006
    Publication date: December 14, 2006
    Inventors: Reiko Yoshimura, Hideyuki Nishizawa, Kenji Todori, Ko Yamada, Fumihiko Aiga, Tsukasa Tada
  • Publication number: 20060163556
    Abstract: A refractive index variable device has a structure including quantum dots dispersed in a solid matrix, each of the quantum dots comprising a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so that an additional electron occupies an upper different shell orbital when receives an electron; and an electron injector injecting an electron into the quantum dots through the solid matrix.
    Type: Application
    Filed: January 20, 2006
    Publication date: July 27, 2006
    Inventors: Reiko Yoshimura, Kenji Todori, Yoshiaki Kawamonzen, Fumihiko Aiga, Tsukasa Tada
  • Patent number: 7081328
    Abstract: An optical disk from which recorded data are read out by means of light irradiation has a substrate having recording pits as data on a surface thereof, and stacked films formed on the substrate. The stacked films contain a super-resolution film of a polymer matrix and semiconductor particles having an organic group covalently bonded thereto, and a reflective film reflecting light. The super-resolution film and the reflective film are provided in this order from a light incident side.
    Type: Grant
    Filed: March 29, 2001
    Date of Patent: July 25, 2006
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Todori, Toshihiko Nagase, Katsutaro Ichihara, Naoko Kihara
  • Publication number: 20060067602
    Abstract: A refractive index variable element includes a structure including quantum dots having discrete energy levels and a dielectric matrix surrounding the quantum dots, and an electron injector injecting an electron into the quantum dots through the dielectric matrix.
    Type: Application
    Filed: September 19, 2005
    Publication date: March 30, 2006
    Inventors: Kenji Todori, Reiko Yoshimura, Fumihiko Aiga, Tsukasa Tada
  • Publication number: 20060065902
    Abstract: Refractive index changing apparatus includes quantum dots each having discrete energy levels including ground level and excited level, the excited level being higher than the ground level even if energy due to ambient temperature is provided on the quantum dots, barrier structure unit formed of dielectric which surrounds the quantum dots, injection unit configured to inject an electron into position of the ground level in each quantum dot via the barrier structure unit, utilizing tunneling effect, or to prevent injection of an electron into the position, injecting the electron or preventing injection of the electron controlled by changing an energy level of the injection unit, source which emits, to the quantum dots, first light beam having first energy for exciting electrons from the ground level to the excited level, and source which emits, to the quantum dots, second light beam having second energy different from the first energy.
    Type: Application
    Filed: September 29, 2005
    Publication date: March 30, 2006
    Inventors: Kenji Todori, Reiko Yoshimura, Fumihiko Aiga, Tsukasa Tada
  • Publication number: 20040190432
    Abstract: An optical recording medium includes an optical recording layer, a separating layer formed on a reproducing light incident side of the optical recording layer, and a phase-change reproducing layer formed on the reproducing light incident side of the separating layer, absorbance of which phase-change reproducing layer is changed depending on whether a state of the optical recording layer is a recording mark or a space. A transfer portion to which a state of the optical recording layer is transferred is formed in a portion having high absorbance of the phase-change reproducing layer by irradiation with reproducing light, while a portion of the phase-change reproducing layer other than the transfer portion is kept in a state optically differing from the transfer portion.
    Type: Application
    Filed: January 16, 2004
    Publication date: September 30, 2004
    Inventors: Katsutaro Ichihara, Sumio Ashida, Keiichiro Yusu, Kenji Todori, Takayuki Tsukamoto
  • Patent number: 6738335
    Abstract: This invention provides an optical recording medium having a structure in which a plurality of recording layers are stacked, and a reproducing method and apparatus for the medium. As an interlayer interposed between first and second recording layers, this invention uses a layer which guides converged light irradiating the first recording layer to the second recording layer such that the beam diameter on the second recording layer is substantially equal to the beam diameter on the first recording layer.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: May 18, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Todori, Toshihiko Nagase, Katsutaro Ichihara
  • Publication number: 20010038900
    Abstract: An optical disk from which recorded data are read out by means of light irradiation has a substrate having recording pits as data on a surface thereof, and stacked films formed on the substrate. The stacked films contain a super-resolution film of a polymer matrix and semiconductor particles having an organic group covalently bonded thereto, and a reflective film reflecting light. The super-resolution film and the reflective film are provided in this order from a light incident side.
    Type: Application
    Filed: March 29, 2001
    Publication date: November 8, 2001
    Inventors: Kenji Todori, Toshihiko Nagase, Katsutaro Ichihara, Naoko Kihara
  • Publication number: 20010001472
    Abstract: Disclosed is a method of reading a pattern comprising steps of heating or irradiating with infrared light a substrate on which a transparent pattern is formed, the pattern containing a material capable of absorbing infrared light of specific wavelength such as polyacrylonitrile, and detecting infrared light which is radiated or reflected from the pattern.
    Type: Application
    Filed: July 1, 1999
    Publication date: May 24, 2001
    Inventors: KENJI SANO, TAEKO I. URANO, HIDEYUKI NISHIZAWA, MITSUNAGA SAITO, KENJI TODORI
  • Patent number: 6002522
    Abstract: An optical functional element including two diffraction gratings having metal films formed on their surfaces, which are arranged to oppose each other to form a photonic band, and an optical functional film interposed between these diffraction gratings, the optical functional film consisting of a polymer containing an optical functional material, such as a nonlinear optical material and electro-optic material, dispersed in the polymer.
    Type: Grant
    Filed: June 10, 1997
    Date of Patent: December 14, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Todori, Toshiro Hiraoka, Shuji Hayase
  • Patent number: 5971276
    Abstract: A method of reading a pattern including steps of heating or irradiating with infrared light a substrate on which a transparent pattern is formed, the pattern containing a material capable of absorbing infrared light of specific wavelength such as polyacrylonitrile, and detecting infrared light which is radiated or reflected from the pattern.
    Type: Grant
    Filed: February 7, 1997
    Date of Patent: October 26, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Sano, Taeko I. Urano, Hideyuki Nishizawa, Mitsunaga Saito, Kenji Todori
  • Patent number: 5937267
    Abstract: The present invention is to clear the difficulty in determining the progress of the decomposition reaction of PCBs carried out by a conventional device for decomposing PCBs, and to provide a system for treating PCBs to render them harmless, capable of continuously determining the progress of the decomposition reaction of PCBs at real time by using a predetermined amount of a reaction solution taken out while the decomposition reaction of the PCBs is proceeding.
    Type: Grant
    Filed: July 1, 1997
    Date of Patent: August 10, 1999
    Assignee: Kabushiki Kasiha Toshiba
    Inventors: Kenji Todori, Shuji Hayase, Katsushi Nishizawa, Nobutada Aoki, Hideki Shimada, Naoki Tajima, Kazuo Unoki
  • Patent number: 5858541
    Abstract: A glass composite material comprising a polymer chain selected from the group consisting of polysilane, polygermane, polystannane and a copolymer thereof, and a network structure of a metal oxide consisting of a metal atom bonded to the other metal atom through an oxygen atom, wherein the polymer chain is chemically crosslinked with a glass matrix of the network structure of the metal oxide directly or indirectly, and a volume resistivity measured by setting a ratio of a voltage to a film thickness at 10.sup.6 V/cm according to a disc plate electrode method is not more than 3.times.10.sup.6 .OMEGA.cm.
    Type: Grant
    Filed: October 3, 1997
    Date of Patent: January 12, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshiro Hiraoka, Yutaka Majima, Kenji Todori, Julian R. Koe, Yoshihiko Nakano, Shinji Murai, Shuzi Hayase
  • Patent number: 5717051
    Abstract: A glass composite material comprising a polymer chain selected from the group consisting of polysilane, polygermane, polystannane and a copolymer thereof, and a network structure of a metal oxide consisting of a metal atom bonded to the other metal atom through an oxygen atom, wherein the polymer chain is chemically crosslinked with a glass matrix of the network structure of the metal oxide directly or indirectly, and a volume resistivity measured by setting a ratio of a voltage to a film thickness at 10.sup.6 V/cm according to a disc plate electrode method is not more than 3.times.10.sup.6 .OMEGA.cm.
    Type: Grant
    Filed: September 19, 1995
    Date of Patent: February 10, 1998
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshiro Hiraoka, Yutaka Majima, Kenji Todori, Julian R. Koe, Yoshihiko Nakano, Shinji Murai, Shuzi Hayase
  • Patent number: 5694188
    Abstract: A liquid crystal display device comprises two substrates opposed to each other, a comb-shaped wall electrode formed to correspond to each pixel of an array defined by vertical and horizontal wires formed on the substrate, the comb-shaped wall electrode having a plurality of elemental electrodes, major surfaces of each of the elemental electrodes being substantially perpendicular to the surfaces of the two substrates, and the major surfaces of adjacent ones of the elemental electrodes constituting counter electrodes to each other, and a liquid crystal filled in a gap of the comb-shaped wall electrode provided between the two substrates.
    Type: Grant
    Filed: September 14, 1995
    Date of Patent: December 2, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Sano, Kenji Todori, Yutaka Majima, Masayuki Sekimura, Akinori Hongu, Taeko I. Urano, Shigeru Machida, Koji Asakawa
  • Patent number: 5173440
    Abstract: In fabricating a semiconductor device, when impurities are diffused from a silicon oxide layer containing the impurities to a semiconductor layer, a diffusion atmosphere is controlled so as to oxidize or reduce a specified impurity to thereby control the diffusion coefficient of the impurities in the silicon oxide layer. Thus, it is possible to form a diffusion layer having a desired impurity profile under a good control.
    Type: Grant
    Filed: May 1, 1990
    Date of Patent: December 22, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshitaka Tsunashima, Kenji Todori, Kikuo Yamabe