Abstract: A nitride semiconductor device includes an electron transit layer that is formed of a nitride semiconductor, an electron supply layer that is formed on the electron transit layer, and formed of a nitride semiconductor and that has a recess which reaches the electron transit layer from a surface, a thermal oxide film that is formed on the surface of the electron transit layer exposed within the recess, a gate insulating film that is embedded within the recess so as to be in contact with the thermal oxide film, a gate electrode that is formed on the gate insulating film and that is opposite to the electron transit layer across the thermal oxide film and the gate insulating film, and a source electrode and a drain electrode that are provided on the electron supply layer at an interval such that the gate electrode intervenes therebetween.

Abstract: An electronic device included in a mobility device includes a transmission antenna, a reception antenna, and a controller. The transmission antenna transmits a transmission wave. The reception antenna receives a reflected wave that is the transmission wave having been reflected. The controller detects an object, based on a transmission signal transmitted as the transmission wave and a reception signal received as the reflected wave. The controller determines whether the mobility device is rearmost among multiple mobility devices traveling in a platoon, in accordance with whether an object having a relative velocity of a predetermined threshold or less relative to the mobility device is detected at a predetermined distance behind the mobility device in a traveling direction of the mobility device.

Abstract: An electronic device includes a transmission antenna, a reception antenna, and a signal processor. The transmission antenna is configured to transmit a transmission wave. The reception antenna is configured to receive a reflection wave resulting from reflection of the transmission wave. The signal processor is configured to detect an object based on a transmission signal transmitted as the transmission wave and a reception signal received as the reflection wave. The signal processor classifies a point group representing the object in accordance with a prescribed parameter when performing clustering on detection results of the object.

Abstract: Provided are an object tracking device and an object tracking method that allow multiple objects to be tracked with high accuracy. An object tracking device (20) includes an input interface (21), a processor (23), and an output interface (24). The input interface (21) is configured to acquire sensor data. The processor (23) is configured to detect multiple detection targets from the sensor data and perform tracking using a Kalman filter for each of the multiple detection targets. The output interface (24) is configured to output detection results of the detection targets. The processor (23) allows overlapping of detection results during the process of tracking the multiple detection targets.

Abstract: A flow rate control device capable of suppressing overshoot while improving responsiveness at the beginning of flow rate control includes: a flow rate meter that measures a flow rate of a fluid flowing through a flow path; a flow rate regulating valve that regulates the flow rate of the fluid flowing through the flow path; and a control part that controls an opening degree of the flow rate regulating valve based on a measurement result of the flow rate meter, the flow rate control device has: a low flow rate rapid valve opening function that accelerates an outflow of the fluid by forcibly opening the opening degree of the flow rate regulating valve from fully closed degree to a designated opening degree when the opening degree of the flow regulating valve is fully closed and a flow rate control is started; and an overshoot suppressing function that is used for suppressing the overshoot by making the flow rate control stand by until a preset standby time or a preset flow rate threshold is reached immediately a

Abstract: Provided are an object tracking device and an object tracking method that allow multiple objects to be tracked with high accuracy. An object tracking device (20) includes an input interface (21), a processor (23), and an output interface (24). The input interface (21) is configured to acquire sensor data. The processor (23) is configured to detect multiple detection targets from the sensor data and perform tracking using a Kalman filter for each of the multiple detection targets. The output interface (24) is configured to output detection results of the detection targets. The processor (23) groups a plurality of the Kalman filters and determines whether or not each of the Kalman filters corresponds to an identical object.

Abstract: A catalyst for a fuel cell includes a carbon support including a micropore, and a metal supported on the carbon support. The metal is at least one of platinum and a platinum alloy, a specific surface area of the carbon support is 250 m2/g-carbon or more and 338 m2/g-carbon or less, and an area of the micropore of the carbon support is 48 m2/g-carbon or more and 74 m2/g-carbon or less.

Abstract: A multilayer body that is obtained by bonding a separator, which serves as a base material, and a lip, which serves as a sealing member, to each other by the intermediary of an adhesive layer , wherein: the lip is formed of a rubber composition that contains the component (A) described below; and the adhesive layer is formed of an adhesive that is mainly composed of the component (?) described below. Consequently, this multilayer body exhibits high acid-resistant adhesion at high temperatures, thereby having excellent long-term bonding reliability and excellent sealing properties. (A): A rubber component that is composed of at least one of an ethylene-propylene-diene rubber and an ethylene-butene-diene rubber. (?): A copolymerized oligomer-type silane coupling agent that comprises a specific hydrophilic functional group and a specific hydrophobic functional group at a specific ratio.

Abstract: An electronic device includes a transmission antenna, a reception antenna, and a controller. The transmission antenna transmits a transmission wave. The reception antenna receives a reflected wave that is the transmission wave having been reflected. The controller detects a target by using a constant false alarm rate, based on a transmission signal transmitted as the transmission wave and a reception signal received as the reflected wave. The controller detects an object by using the constant false alarm rate, based on a signal intensity of a complex signal corresponding to a distance of an object whose relative velocity with respect to the electronic device is zero.

Abstract: Provided is a flow rate control device capable of improving accumulated flow rate error. The flow rate control device of the present disclosure includes: a flow rate meter that measures a flow rate of a fluid flowing through a flow path; a flow rate regulating valve that regulates the flow rate of the fluid flowing through the flow path; and a control part that controls an opening degree of the flow rate regulating valve based on a measurement result of the flow rate meter, includes: a closing function that controls the opening degree of the flow rate regulating valve with an instantaneous flow rate value and closes with a set accumulated flow rate value; and an accumulated value prediction function that monitors the current opening degree of the flow rate regulating valve and the instantaneous flow rate value all the time, and starts a closing operation of the flow rate regulating valve at a time point when the accumulated flow rate value reaches an early closing flow rate value.

Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene

Abstract: An electronic device includes a transmission antenna, a reception antenna, and a signal processor. The transmission antenna is configured to transmit a transmission wave. The reception antenna is configured to receive a reception wave resulting from reflection of the transmission wave. The signal processor is configured to detect an object, with a constant false error rate, based on a transmission signal transmitted as the transmission wave and a reception signal received as the reflection wave, The signal processor selects, based on a maximum likelihood estimated value that gives a false alarm rate of signal intensity based on the reception signal, a reference cell disposed in a distance direction with respect to an inspection cell in a two-dimensional distribution of signal intensity, based on the reception signal, in the distance direction and a relative velocity direction.

Abstract: A lubricant composition containing a base oil and organic fine particles substantially consisting of the three elements of carbon, hydrogen and oxygen and having a proportion of particles having a particle diameter of 10 nm to 10 ?m of 90% or greater, wherein the content of the organic fine particles is 0.01 to 50 parts by mass relative to 100 parts by mass of the base oil.

Abstract: A SiC semiconductor device includes a SiC chip having a main surface, a trench gate structure formed at the main surface, a trench source structure formed at the main surface away from the trench gate structure in one direction, an insulating film covering the trench gate structure and the trench source structure above the main surface, a gate main surface electrode formed on the insulating film and a gate wiring that is led out from the gate main surface electrode onto the insulating film such as to cross the trench gate structure and the trench source structure in the one direction, and that is electrically connected to the trench gate structure through the insulating film, and that faces the trench source structure with the insulating film between the trench source structure and the gate wiring.

Abstract: A SiC semiconductor device includes a SiC chip having a main surface that includes a first surface, a second surface hollowed in a thickness direction outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface, a trench structure formed at the first surface such as to be exposed from the connecting surface, and a sidewall wiring that is formed on the second surface such as to cover the connecting surface and that is electrically connected to the trench structure.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a first main surface at one side and a second main surface at another side, a trench gate structure including a gate trench formed in the first main surface of the semiconductor layer, and a gate electrode embedded in the gate trench via a gate insulating layer, a trench source structure including a source trench formed deeper than the gate trench and across an interval from the gate trench in the first main surface of the semiconductor layer, a source electrode embedded in the source trench, and a deep well region of a second conductivity type formed in a region of the semiconductor layer along the source trench, a ratio of a depth of the trench source structure with respect to a depth of the trench gate structure being not less than 1.5 and not more than 4.

Abstract: An image processing apparatus 10 includes an interface 12 configured to acquire an image and a processor 13 configured to perform low-rank approximation by singular value decomposition on the acquired image, and perform object recognition on the acquired image subjected to the low-rank approximation by the singular value decomposition.

Abstract: A SiC semiconductor device includes SiC chip having main surface that includes first surface, second surface hollowed in thickness direction at first depth outside the first surface, and a connecting surface connecting the first surface and the second surface, and in which a mesa is defined by the first surface, the second surface and the connecting surface, a transistor structure formed at an inward portion of the first surface, the transistor structure including a trench gate structure that has a second depth less than the first depth and a trench source structure that has a third depth exceeding the second depth and that adjoins the trench gate structure in one direction, and a dummy structure formed at a peripheral edge portion of the first surface, the dummy structure including a plurality of dummy trench source structures which have the third depth and adjoin each other in the one direction.

Abstract: A task is to provide a wire regulator that can prevent a wire and a guide rail from rusting and prevent an operation failure of the wire regulator. A first rain water guide part 170 that prevents rain water from entering an ascending wire end housing part 157, a descending wire end housing part 163 and a gutter part 161 is provided at a part above a lower end of the ascending wire end housing part 157 of a slider 103, and the first rain water guide part 170 includes first eaves 171, and second eaves 173 that overlap the first eaves 171 on a lower side of the first eaves 171 and in a drop direction R of the rain water.