Abstract: An exposure apparatus includes an illumination optical system for illuminating the reticle using the ultraviolet light from the light source, and a polarization measuring unit measuring the polarization state of the ultraviolet light, the polarization measuring unit including an optical unit for providing at least three different phase differences to the ultraviolet light that has passed at least part of the illumination optical system, a polarization element for providing a different transmittance in accordance with a polarization state of the ultraviolet light that has passed the optical unit, and an image pickup device for detecting a light intensity of the ultraviolet light that has passed the polarization element, the polarization measuring unit measuring the polarization state of the ultraviolet light that has passed the at least part of the illumination optical system based on a detection result of the image pickup device.

Abstract: A method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system includes the steps of forming data for the predetermined pattern, forming data for the auxiliary pattern, and setting the illumination condition for defining an effective light source of illumination using the plural kinds of light.

Abstract: An exposure method for exposing a dense contact hole pattern onto a plate via a projection optical system includes the step of illuminating one of a binary mask and an attenuated phase shifting mask which one has the dense contact hole pattern by utilizing light from a light source and an illumination optical system, wherein the illuminating step uses an off-axis illumination that is polarized in a tangential direction when a value that is directed to half of a interval between centers of two adjacent contact holes in the dense contact hole pattern and is normalized by ?/NA is 0.25×?2 or smaller, where ? is a wavelength of the light, and NA is a numerical aperture of the projection optical system at an image side.

Abstract: A particle remover includes an irradiation unit for irradiating plural lights onto a target from different directions, and for scanning the lights on the target, and a collector for collecting particles carried as a result of scanning of the lights.

Abstract: A light modulator for modulating a phase distribution of incident light includes an element that provides the incident light with three or more types of phase differences, wherein the element includes three or more displaceable light reflective bands, and wherein the light modulator has plural pixels each including the element.

Abstract: An exposure method includes the steps of illuminating a pattern formed on a mask using an illumination system that forms an effective light source having a first part that includes only s-polarized light and a second part that mixes s-polarized light and p-polarized light, and projecting, through a projection optical system, light from the mask onto an object to be exposed.

Abstract: Disclosed is a phase shift mask capable of assuring high-precision pattern transfer, an exposure method and apparatus using such phase shift mask, and a device manufacturing method using such phase shift mask. The phase shift mask includes a substrate having an engraved portion and a non-engraved portion, the engraved portion having a side wall and a bottom face, and a light blocking film provided in a portion of the bottom face and the side wall of the engraved portion. Specifically, the size to be defined by subtracting a thickness of the light blocking film at the side wall from a width of the engraved portion is made equal to 1.3 to 2.4 times the width of a light transmitting portion provided at the engraved portion.

Abstract: A mask manufacturing method suitable for an exposure method wherein a mask on which a desired pattern and a supplementary pattern with formations smaller than those of the desired pattern are arrayed is illuminated, and the light which passed through the mask onto a member to be exposed is projected via a projection optical system, said method comprising a selecting step for selecting one of the following three supplementary patterns, a first supplementary pattern wherein said supplementary pattern is disposed at a position where a line extending in the vertical direction as to the pitch direction from a certain desired pattern hole of said desired pattern, and a line connecting the supplementary pattern hole closest to said certain desired pattern hole in the vertical direction with said certain desired pattern hole, intersect at an angle of 0°, a second supplementary pattern wherein said supplementary pattern is disposed at a position where said angle is 0° or more but less than 45°, and a third supplementa

Abstract: A method for forming, on a mask, a mask pattern used for exposure. The mask pattern includes a first pattern that blends plural types of patterns, and second pattern that is smaller in size than the first pattern. The mask pattern is arranged on the mask so that the first pattern may be resolved and the second pattern is restrained from being resolved.

Abstract: A mask arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern so that where a virtual lattice is assumed which has a lattice point located at a center of the predetermined pattern, a center of the auxiliary pattern is offset from the lattice point of the virtual lattice.

Abstract: An exposure method includes the steps of illuminating a pattern formed on a mask using an illumination system that forms an effective light source having a first part that includes only s-polarized light and a second part that mixes s-polarized light and p-polarized light, and projecting, through a projection optical system, light from the mask onto an object to be exposed.

Abstract: Disclosed is a phase shift mask capable of assuring high-precision pattern transfer, an exposure method and apparatus using such phase shift mask, and a device manufacturing method using such phase shift mask. The phase shift mask includes a substrate having an engraved portion and a non-engraved portion, the engraved portion having a side wall and a bottom face, and a light blocking film provided in a portion of the bottom face and the side wall of the engraved portion. Specifically, the size to be defined by subtracting a thickness of the light blocking film at the side wall from a width of the engraved portion is made equal to 1.3 to 2.4 times the width of a light transmitting portion provided at the engraved portion.

Abstract: A method for forming, on a mask, a mask pattern used for exposure. The mask pattern includes a first pattern that blends plural types of patterns, and second pattern that is smaller in size than the first pattern. The mask pattern is arranged on the mask so that the first pattern may be resolved and the second pattern is restrained from being resolved.

Abstract: A method for setting a mask pattern and an illumination condition suitable for an exposure method for using plural kinds of light to illuminate a mask that arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern, so as to resolve the predetermined pattern without resolving the auxiliary pattern on a target via a projection optical system includes the steps of forming data for the predetermined pattern, forming data for the auxiliary pattern, and setting the illumination condition for defining an effective light source of illumination using the plural kinds of light.

Abstract: An exposure method comprising the steps of forming onto a mask that arranges a pattern of a contact hole and a plurality of patterns each being smaller than the contact hole pattern, and illuminating the mask using plural kinds of light so as to resolve the desired pattern without the smaller patterns on a target via a projection optical system.