Abstract: A copper foil for a printed circuit board has a rust preventing layer formed by a trivalent chromium chemical conversion treatment on a surface of the copper foil that the copper foil is bonded to a base material for the printed circuit board. T copper foil is of copper or copper alloy, and the rust preventing layer contains 0.5 to 2.5 ?g/cm2 of chromium converted into metallic chromium.

Abstract: An apparatus is disclosed for performing high-pressure processing of a workpiece having a top face and a bottom face. The apparatus comprises a processing chamber and a holder for securing the workpiece within the processing chamber so that a substantial portion of the top face and a substantial portion of the bottom face is exposed to a processing material introduced into the processing chamber. In one embodiment, the holder comprises an upper segment and a lower segment. The lower segment contacts the workpiece at or near an edge of the workpiece, thus supporting the workpiece in a first vertical direction and securing it in a horizontal plane. The upper segment contacts the workpiece at or near an edge of the workpiece, securing it in a second vertical direction.

Abstract: An etching method and an etching apparatus are provided. Silicon (Si) from surfaces semiconductor wafers W dissolves into an etching liquid E stored in a process bath 10. On detection of the concentration of silicon by a concentration sensor 50, the etching liquid E in the process bath 10 is discharged while leaving a part of the etching liquid when the Si concentration in the etching liquid E reaches a designated concentration. After that, a new etching liquid of substantially equal to an amount of the discharged etching liquid E is supplied into the process bath 10 and added to the etching liquid remaining in the bath 10. Consequently, it is possible to restrict the etching rate just after the exchange of etching liquid from rising excessively.

Abstract: A substrate processing method of the present invention prevents the reattachment of particles to substrates, such as semiconductor wafers, when processing and cleaning the substrates by immersing the substrates held in a vertical attitude in a processing liquid and a cleaning liquid. After processing the substrates in the processing liquid, they are drawn out from the processing liquid. Then, lower parts of the processed substrates are immersed in the cleaning liquid and temporarily kept stationary in the cleaning liquid. Alternatively, the cleaning liquid is sprayed onto the lower parts of the processed substrates. After a predetermined time, the substrates are immersed entirely in the cleaning liquid.

Abstract: An etching method and an etching apparatus are provided. Silicon (Si) from surfaces semiconductor wafers W dissolves into an etching liquid E stored in a process bath 10. On detection of the concentration of silicon by a concentration sensor 50, the etching liquid E in the process bath 10 is discharged while leaving a part of the etching liquid when the Si concentration in the etching liquid E reaches a designated concentration. After that, a new etching liquid of substantially equal to an amount of the discharged etching liquid E is supplied into the process bath 10 and added to the etching liquid remaining in the bath 10. Consequently, it is possible to restrict the etching rate just after the exchange of etching liquid from rising excessively.

Abstract: An etching method and an etching apparatus are provided. Silicon (Si) from surfaces semiconductor wafers W dissolves into an etching liquid E stored in a process bath 10. On detection of the concentration of silicon by a concentration sensor 50, the etching liquid E in the process bath 10 is discharged while leaving a part of the etching liquid when the Si concentration in the etching liquid E reaches a designated concentration. After that, a new etching liquid of substantially equal to an amount of the discharged etching liquid E is supplied into the process bath 10 and added to the etching liquid remaining in the bath 10. Consequently, it is possible to restrict the etching rate just after the exchange of etching liquid from rising excessively.

Abstract: An etching method and an etching apparatus are provided. Silicon (Si) from surfaces semiconductor wafers W dissolves into an etching liquid E stored in a process bath 10. On detection of the concentration of silicon by a concentration sensor 50, the etching liquid E in the process bath 10 is discharged while leaving a part of the etching liquid when the Si concentration in the etching liquid E reaches a designated concentration. After that, a new etching liquid of substantially equal to an amount of the discharged etching liquid E is supplied into the process bath 10 and added to the etching liquid remaining in the bath 10. Consequently, it is possible to restrict the etching rate just after the exchange of etching liquid from rising excessively.

Abstract: A wafer processing apparatus prevents the reattachment of particles to wafers, such as semiconductor wafers, when processing the wafers by immersing the same held in a vertical attitude in a processing liquid and a cleaning liquid. When immersing the wafers processed by the processing liquid in the cleaning liquid contained in and overflowing a cleaning tank, a wafer holding device holding the wafers in a vertical attitude is stopped temporarily upon the immersion of lower parts of the wafers in the cleaning liquid. Consequently, particles contained in the processing liquid remaining on the wafers are dispersed in the overflowing cleaning liquid, so that the particles can be removed from the wafers and the reattachment of the particles to the wafers does not occur.

Abstract: A wafer processing apparatus prevents the reattachment of particles to wafers, such as semiconductor wafers, when processing the wafers by immersing the same held in a vertical attitude in a processing liquid and a cleaning liquid. When immersing the wafers processed by the processing liquid in the cleaning liquid contained in and overflowing a cleaning tank, a wafer holding device holding the wafers in a vertical attitude is stopped temporarily upon the immersion of lower parts of the wafers in the cleaning liquid. Consequently, particles contained in the processing liquid remaining on the wafers are dispersed in the overflowing cleaning liquid, so that the particles can be removed from the wafers and the reattachment of the particles to the wafers does not occur.

Abstract: A modified cross-section material having a thin part and a thick part in its widthwise direction is manufactured through a plurality of roll stages. Each rolling stage comprises of a set of a convex roll and a flat roll, wherein the convex roll has a convex part. The thin part is formed in accordance with the lengthwise expansion by the convex part of the convex roll, and the thick part is formed in accordance with the lengthwise expansion by a part other than the convex part of the convex roll.

Abstract: A method of washing substrates arranged at a substantially equal pitch internal in a cassette which includes steps of (a) transferring the substrates to a holder a pitch interval narrower than the arrangement pitch interval in said cassette; (b) supplying a washing solution into a processing bath; (c) conveying the holder holding the substrates into the processing bath; (d) dipping the substrates in the washing solution in the processing bath to wash the substrates; and (e) supplying a rinse solution into the processing bath to substitute the washing solution with the rinse solution to rinse the substrates in the processing bath.

Abstract: A substrate washing apparatus includes a bath, a washing solution supply source, a first path for allowing the washing solution overflowing from the bath, a rinse solution supply source, a second path for passing the rinse solution, a common path communicating with the first and second paths and also with a bottom of the bath, a first valve, a second valve, a discharge path branched from the first path, and a control section, wherein the first valve includes a first body for opening/closing the first path, a third path arranged parallel to the first path and having a diameter smaller than a diameter of the first path, and a second body for opening/closing the third path, so that the first body is opened and the second body is closed, to allow the washing solution to flow into the bath, and on the other hand, the first body is closed, the second body is opened, to allow the rinse solution to flow into the bath, and the washing solution remaining in the first and third paths is discharged together with the rins

Abstract: A substrate drying apparatus includes a process bath having an object containing region for containing an object to be treated, a treatment liquid containing region for containing a volatile treatment liquid, and heating member for evaporating the treatment liquid, a receiving container, provided below the object containing region, for receiving water removed from the object with use of the evaporated treatment liquid, an exhaust pipe, attached to the container, for exhausting the water from the container to the outside of the process bath, and a cooling device, provided above the object containing region of the process bath, for condensing the evaporated treatment liquid, wherein the exhaust pipe has a valve and a branch pipe branched from the exhaust pipe such that the branch pipe is closer to the container than the valve is.

Abstract: A substrate drying apparatus includes a process bath having an object containing region for containing an object to be treated, a treatment liquid containing region for containing a volatile treatment liquid, and heating member for evaporating the treatment liquid, a receiving container, provided below the object containing region, for receiving water removed from the object with use of the evaporated treatment liquid, an exhaust pipe, attached to the container, for exhausting the water from the container to the outside of the process bath, and a cooling device, provided above the object containing region of the process bath, for condensing the evaporated treatment liquid, wherein the exhaust pipe has a valve and a branch pipe branched from the exhaust pipe such that the branch pipe is closer to the container than the valve is.

Abstract: A substrates-washing apparatus includes a process vessel in which washing solution is stored to wash a plurality of substrates, a boat for holding the substrates parallel to one another in the process vessel, solution supply openings formed in the bottom of the process vessel, a solution supply system communicated with the solution supply openings to supply washing solution into the process vessel through the solution supply openings, and a straightening plate arranged between the substrates held on the boat and the solution supply openings in the bottom of the process vessel and provided with a plurality of apertures through which washing solution passes. The apertures form plural lines in the longitudinal direction of the straightening plate, the apertures in each line are arranged to correspond to the substrates alternately, and the apertures in one line are shifted from those in the other adjacent line.

Abstract: A spindrier comprises a box enclosing a plurality of wafers, a motor for rotating the wafers in the box, upper and lower clamp bars for holding the wafers face to face and substantially perpendicular to a rotating shaft of rotating means, and gas introducing and discharging mechanisms for generating a flow of clean gas in the box. A sectional area of an open bottom of the box is smaller than a sectional area of an open top of the box, and the gas flows from the open top to the open bottom.

Abstract: A processing vessel suitable for use with a washing system intended to wash a plurality of wafers. The processing vessel includes a washing solution supply source, a circulation pump, a filter, a main vessel portion provided with inlets in the bottom thereof, a boat for holding the plurality of wafers in the center area of the main vessel portion and a flow control assembly arranged between the inlets and the wafers. The flow control assembly includes a scattering plate for scattering washing solution, which is introduced into the main vessel portion through the inlets, in the horizontal direction, and guiding passages through which the washing solution introduced through the inlets is made to have a substantially laminar flow and is guided into the center area of the main vessel portion. The guiding passages are formed by intervals between side plates and the scattering plate and by a plurality of apertures in the scattering plate.

Abstract: A device for transporting and transferring objects of treatment arranged in a down flow to a plurality of treatment sections for treating the objects comprises a transportation section movable between the treatment sections, a first drive mechanism for moving the transportation section, a first arm movably attached to the transportation section and used for those objects of treatment which are adjusted to a predetermined temperature in the treatment sections, a second arm movably attached to the transportation section and used for the other objects of treatment than the ones adjusted in temperature, and a second drive mechanism for separately moving the first and second arms.